從傳統(tǒng)MOS管到硅納米線場效應(yīng)晶體管.

1、SiNWMOSFETContents：1. TraditionalMOSFET2. SiNW-based MOSFETl.Traditional MOSFETMetal-Oxide-Semic on ductor Field-Effect Tran sistor增強(qiáng)型N溝道MOSFET Xp溝道N溝道d?QH耗盡型P溝道d ?W強(qiáng)型MOSFET電路符號(hào)耗盡型MOSFET電路符號(hào)l.Traditional MOSFET N溝道增強(qiáng)型MOSFET(Siopa極d-氧化孔絶緣層協(xié)rU極 (Al)溝道 ffitggA必ps1b襯底引線1利g d工作原理（Vgs對(duì)溝道的控制作用）f 11 VGS=Oic

2、5=0截止?fàn)顟B(tài)(2) 0<VGS<VT產(chǎn)丫電場但 未感生出溝道iDs=OPIb襯底引線l.Traditional MOSFET工作原理（Vgs對(duì)溝道的控制作用）(3) VGS2VT感生出導(dǎo)電溝道Vd5>0時(shí)，irs>0工作狀態(tài)耗jQ N薊樹溝道、" p1b襯底（JI線VGS越大，溝道越厚工作原理（Vgs>VlVds對(duì)溝道的控制作用）l.Traditional MOSFET工作原理（Vgs>VlVds對(duì)溝道的控制作用） Vgs和Vds同時(shí)作用時(shí):I轉(zhuǎn)移特件曲線V'dAtiA8預(yù)夾斷臨界點(diǎn)軌跡DSCS"T（或曠S-f S耳）可變電阻7

3、V飽和區(qū) 6V6-4-2-4VV«止區(qū)Y5101520輸出特牲Illi線l.Traditional MOSFET耗盡型MOSFET襯底o(hù)B耗盡型MOSFETijymA8642"liRlIx卜飽和4V2VVgs = 0V-2V-4V咸II：區(qū)03691215 Svl.Traditional MOSFET從能帶角度解釋MOSFET：Gate voltage modulates the con ductivity ofthe channel by raisingor lowering the height of an energy barrier between the sour

4、ce and channel!l.Traditional MOSFET101015些重要的參數(shù):1開啟電壓冷carrier mobolity2互導(dǎo)g'j gm=/z(C/LO V"DS3. Subthresholdslope of the subthreshold region(For well-designed MOSFET, S<80mV/dGcadG )swing(S ):gSKr 轉(zhuǎn)移特件oH = 1 / pep I拔流f濃度4, On current: Ids(VdsVgs-Vdd) Off current: IDS (VdsVdd,Vgs-0)On/Off

5、ratioI High on/off ratio & low S |2.SiNW-based MOSFET Two different ways to make a transistorgateso urce04ior p"metametalox-S5XFnmlS'"0 2505Posib on nmCharge-modulation transistorTransmission-modulation transistor2.SiNW-based MOSFET Ambipolar Conduct!on of Schottky Barried FETsId-I

6、gs of a Schottky barrier CNTFET2.SiNW-based MOSFET Ambipolar Conduct!on of Schottky Barried FETs£rVgs=OVds=OEv Vgs>0Vds=O* EcErEvEvV<55=0-5Vd5VgsvOVq5=01.0-(h)0.50.0-0.5 -Electrode:AI 5Onm) and Au (150 nm)l.O0.500-0.5.1.0亠丄"彳y,-0.1-0.05000.05V(volts)-LO OS 0.00.5 LOV(vohs)廠o-xsdEe 二(

7、b)-LO 450.00.51.0V(voIU)Bdoped1 OhmicPdopedNon ohmicl-6:20V-20V 】0050.00.5 LOV<volts)1&OVTOVJ Phys, Chem, B, Vol 104, No. 22, 20002.SiNW-based MOSFETgex：measured; gin：intrisicPchSi contacts10-ia-4<4Vj5VAppl Phys. Lett. 90, 132107 (2007)2.SiNW-based MOSFETa20 pm-2UUrIO0-12-10-8 -6 -4 -2 0-1

8、50< -1003.502 4 6rlO-"Au providesa good Ohmic contactto p-type NWsSurrounding ambie nt and Surface conditionshole mobility:90±40<«rV"'<'&hole concentration:2x10"-4x10”mTested in air !?Si waferhole mobility:504-512加"7hole concentration:94xl0"-l6xl0i'cn"Adv. Funct. Mater 2008,18, 3251-3257(b)12pm1pmFor n-p-n MOSFET：= &仃"/gsoFor p FET(without n segments )：V = IV _> /= I On A & / / 仃 10D5ttnon off(1) P