脈沖激光沉積(PLD)技術(shù)和應(yīng)用剖析課件_第1頁
脈沖激光沉積(PLD)技術(shù)和應(yīng)用剖析課件_第2頁
脈沖激光沉積(PLD)技術(shù)和應(yīng)用剖析課件_第3頁
脈沖激光沉積(PLD)技術(shù)和應(yīng)用剖析課件_第4頁
脈沖激光沉積(PLD)技術(shù)和應(yīng)用剖析課件_第5頁
已閱讀5頁，還剩30頁未讀， 繼續(xù)免費閱讀

下載本文檔

版權(quán)說明：本文檔由用戶提供并上傳，收益歸屬內(nèi)容提供方，若內(nèi)容存在侵權(quán)，請進行舉報或認(rèn)領(lǐng)

文檔簡介

Pulsed

LaserDeposition(PLD)HuangYanWangJianlinGe

WenZhaoYuanYunYuUNIVERSITYOFSCIENCEANDTECHNOLOGYOFCHINAOutlineThinFilmDepositionPulsedLaserDeposition

a)Comparedtoothergrowthtechniquesb)ExperimentalSetupc)AdvantagesandDisadvantagesBasicTheoryofPLDOpportunitiesThinFilmDepositionTransferatomsfromatargettoavapor(orplasma)toasubstrateThinFilmDepositionTransferatomsfromatargettoavapor(orplasma)toasubstrateAfteranatomisonsurface,itdiffusesaccordingto:D=Doexp(-eD/kT)eDistheactivationenergyfordiffusion~2-3eVkTisenergyofatomicspecies.Wantsufficientdiffusionforatomstofindbestsites.Eitheruseenergeticatoms,orheatthesubstrate.Waystodepositthinfilms

targetsubstrateEvaporation(Molecularbeamepitaxy-MBE)

targetsubstrateChemicalvapordeposition-CVDAr+substrategasSputteringLowenergydeposition(MBE):~0.1eV

maygetislandingunlessyoupickrightsubstrateorheatsubstratetohightemperaturesHighenergydeposition(Sputtering~1eV)smootherfilmsatlowersubstratetemperatures,butmaygetintermixingLowenergydeposition(MBE):~0.1eV

maygetislandingunlessyoupickrightsubstrateorheatsubstratetohightemperaturesHighenergydeposition(Sputtering~1eV)smootherfilmsatlowersubstratetemperatures,butmaygetintermixingPulsedLaserDepositionTarget:metals,semiconductors…Laser:UV,10nspulsesVacuum:AtmospherestoultrahighvacuumFilmthickness:typically100-200nm.Depositionrate:0.1nm/pulsePulsedLaserDepositionPulsedLaserDepositionSlot6DEPOSITIONCHAMBERVIDEOCAMERATOPWINDOWROTATIONMOTOREXCIMERLASERl

=248nmHEATERWITHTHERMOCOUPLEBEAMCONDITIONING&FOCUSING

YBCOTARGET

PRESSURETRANSDUCERVALVESTOVACUUM&O2WINDOWSSERVO-CONTROLLEDMIRRORSUBSTRATEPLUMEINSERTABLEBEAMATTENUATORWINDOW晑晑

晑晑MANUALEMSENSORAUTOMATEDEMSENSORRAMANSENSORSlot6Slot13AdvantagesofPLDExacttransferofcomplicatedmaterialsFlexible,variety,easytoimplementEasytopreparetargetEpitaxyatlowtemperatureFastgrowthrateDisadvantagesofPLDUnevencoverageHighdefectorparticulateconcentrationNotwellsuitedforlarge-scalefilmgrowthMechanismsanddependenceonparametersnotwellunderstoodProcessesinPLDSubsurfaceBoilingLasersuperheatssubsurfacelayerbeforesurfacereachesevaporationpointSurfacebreaksapartintolarge(micron-sized)globuleparticleswhenthesubsurfaceexpands.

ExpansionofplumecausessuddendropinpressurejustabovesurfaceShockwavepullsdropletsofliquidoffofsurfacePressureExpulsionExfoliationThermalshockcausesirregularitiesinsurfacetobreakoffSurfacemorphologyPreviousablationParticulatesarerandomlyshapedProcessparameterssubstratetemperaturethetarget-substratedistanceambientoxygenpressureandannealingtemperaturetargetconsistencypulselaserenergylaserfrequencyCharacteristicpropertiesofY2SiO5:CethinfilmsgrownwithPLD

E.Coetsee,J.J.Terblans,H.C.Swart,PhysicaB404(2009)4431–4435Si（110）substrate600℃

Theonlyvariable:AmbientgasspeciesAr/O2/N2Constant:248nmKrF

Pulsefrequency8HzPulsesnumber4000Laserfluence(1.6±0.2)J/cm2Y2SiO5:CestandardphosphorpowdersDifferent

nanostructure:substratetemperatureof600℃andanoxygenbackgroundpressureof

100Pa.SEMimagesofArF-depositedfilmsSEMimagesofKrF-depositedfilmspencil-likestructuresacolumnarstructureZincoxidenanostructuresgrownbypulsedlaserdepositionD.Valerinietal,ApplPhysA,2007Thegoodcrystallinequalityonlythe(002)and(004)diffractionpeaksoftheZnO

wurtzitecrystalstructurearevisible.depositedin1PaofoxygenataSisubstratetemperatureof600℃byusingthetwoablationwavelengths.OpportunitiesUltrahighqualityfilmsCircuitwritingIsotopeEnrichmentNewMaterialsNanoparticleproductionUltrahighqualityfilmsCircuitwritingIsotopeEnrichmentNewMaterialsNanoparticleproductionOpportunitiesMBEPLDHigherqualityfilmsbettermagneticpropertiesMagneticMomentoffccFe(111)UltrathinFilmsbyUltrafastDepositiononCu(111)J.Shenetal.,Phys.Rev.Lett.,80,pp.1980-1983UltrahighqualityfilmsCircuitwritingIsotopeEnrichmentNewMaterialsNanoparticleproductionOpportunitiesDirectwritingofelectroniccomponents-inair!RapidprocessrefinementNomasks,preforms,orlongcycletimesTrue3-Dstructurefabricationpossible

Singlelaserdoessurfacepretreatment,spatiallyselectivematerialdeposition,surfaceannealing,componenttrimming,ablativemicromachining,dicingandvia-drilling

DARPAMICEProgram

(U.S.DefenseAdvancedResearchProjectsAgency

MesoscopicIntegratedConformalElectronicsprogram)UltrahighqualityfilmsCircuitwritingIsotopeEnrichmentNewMaterialsNanoparticleproductionOpportunitiesOvertwicethenaturalenrichmentofB10/B11,Ga69/Ga71inBNandGaNfilmsPlasmacentrifugebytoroidalandaxialmagneticfieldsof0.6MG!IsotopeEnrichmentinLaser-AblationPlumesandCommensuratelyDepositedThinFilms

P.P.Pronko,etal.PhysRev.Lett.,83,pp.2596-2599Ultrahighquality

溫馨提示

  • 1. 本站所有資源如無特殊說明，都需要本地電腦安裝OFFICE2007和PDF閱讀器。圖紙軟件為CAD,CAXA,PROE,UG,SolidWorks等.壓縮文件請下載最新的WinRAR軟件解壓。
  • 2. 本站的文檔不包含任何第三方提供的附件圖紙等，如果需要附件，請聯(lián)系上傳者。文件的所有權(quán)益歸上傳用戶所有。
  • 3. 本站RAR壓縮包中若帶圖紙，網(wǎng)頁內(nèi)容里面會有圖紙預(yù)覽，若沒有圖紙預(yù)覽就沒有圖紙。
  • 4. 未經(jīng)權(quán)益所有人同意不得將文件中的內(nèi)容挪作商業(yè)或盈利用途。
  • 5. 人人文庫網(wǎng)僅提供信息存儲空間，僅對用戶上傳內(nèi)容的表現(xiàn)方式做保護處理，對用戶上傳分享的文檔內(nèi)容本身不做任何修改或編輯，并不能對任何下載內(nèi)容負(fù)責(zé)。
  • 6. 下載文件中如有侵權(quán)或不適當(dāng)內(nèi)容，請與我們聯(lián)系，我們立即糾正。
  • 7. 本站不保證下載資源的準(zhǔn)確性、安全性和完整性, 同時也不承擔(dān)用戶因使用這些下載資源對自己和他人造成任何形式的傷害或損失。

評論

0/150

提交評論