WAT測(cè)量項(xiàng)目以及測(cè)試方法（課堂PPT）

1、上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT 測(cè)量項(xiàng)目以及測(cè)試方法測(cè)量項(xiàng)目以及測(cè)試方法TD/DTD/DD: Sutter Dai2008/03/07上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT Introduction WAT是什么 WAT系統(tǒng)介紹3. WAT測(cè)試項(xiàng)目及方法上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing

2、 CorporationWafer Acceptance Test（晶片允收測(cè)試） 半導(dǎo)體硅片在完成所有制程工藝后，針對(duì)硅片上的各種測(cè)試結(jié)構(gòu)所進(jìn)行的電性測(cè)試。 通過對(duì)WAT數(shù)據(jù)的分析，我們可以發(fā)現(xiàn)半導(dǎo)體制程工藝中的問題，幫助制程工藝進(jìn)行調(diào)整。 WAT是什么是什么? 上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT系統(tǒng)介紹Manual ProberAgilent 4284A CV MeterAgilent 4156A IV MeterCascade Manual Prober上海宏力半導(dǎo)體制造有限

3、公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT系統(tǒng)介紹Agilent 4070 systemTEL P8XLAgilent 4070上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT系統(tǒng)介紹HP 4070 ServerAgilent 81110A Pulse Generator Agilent 4284A CV MeterAgilent E4411B Spectrum AnalyzerAgilent 4070 內(nèi)部結(jié)構(gòu)

4、內(nèi)部結(jié)構(gòu)Agilent 3458ADigit Multimeter上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWaferAuto-ProberRelay MetricServerEDA ServerTest KeyProbe cardSMUPIN NoDataDataProduct informationTest ProgramControl commandDC testerCV Meter4070ServerWAT 流程圖上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semic

5、onductor Manufacturing CorporationWAT測(cè)試項(xiàng)目MOS deviceField DeviceJunctionGate OxideResistorBipolar DeviceLayout Rule Check常見的幾種器件結(jié)構(gòu)常見的幾種器件結(jié)構(gòu)上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation MOS Device上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation上海宏力半導(dǎo)體制造

6、有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationItem nameMethod of measurementIdsVd=Vg=Vdd, Vs=Vb=0, measure Id, Ids=Id/WidthVt0Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 3V,use maximum slope method,Vt0=Xintercept 1/2*VdVt1Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 2V,measureId,Vt1=VgId=0.1uA*Wi

7、dth/LengthIsubVd=Vdd, Vs=Vg=0, sweep Vg from 0 to Vdd to get maximum Isub currentIoffVd=1.1Vdd, Vg=Vs=Vb=0, measure Id, Ioff=Id/WidthBvdVg=Vs=Vb=0, sweep Vd from 0V to Vdstop(3Vdd), measure Id, Bvd=VdId=0.1uA/um以以 NMOS 為例：為例：上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation2. F

8、ield Device上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationItem nameMethod of measurementVtVd=1.1Vdd, sweep Vg from 0V to Vgstop(3Vdd),measure Id, Vt=VgId=10nA/umIleakVg=Vd=1.1Vdd, measure Id, Ileak=Id/WidthVptVg=1.1Vdd, sweep Vd from 0V to Vdstop(3Vdd),measure Id, Vpt=VdId=10

9、nA/umWAT Item Name(以Poly Nfield為例) : VtNfpS (field Vt)IleakNfpSVptNfpS (punchthrough Vt)上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation3. Junction上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT Item Name (以N+/PW junction為例) : CNjIleakNjBvNjItem name

10、Method of measurementCjVg=0V, Vb=GND, apply a 0.03V AC signal to measure C value, Cj=C/AreaIleakVg=1.1Vdd, measure Ig, Ileak=Ig/AreaBvVb=0, sweep Vg from 0V to Vgstop(3Vdd), measure Ig, Bv=VgIg=100pA/um2上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation4. Gate Oxide上海宏力半導(dǎo)體制造有限公司

11、上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT Item Name(以PW gate oxide為例) : Cgpw ToxpwBvCgpwItem nameMethod of measurementCoxVg=Vdd, Vb=GND, apply a 0.03V AC signal to measure C value, Cox=C/AreaToxVg=GND, Vb=Vdd, apply a 0.03V AC signal to measure Cox value, Tox=(o *ox *Area)/CoxBvV

12、b=0, sweep Vg from 0V to Vgstop(3Vdd), measure Ig, Bv=VgIg=100pA/um2NOTE: If there has a dummy capacitor, Cdummy should be subtracted.(Cox=Cox-Cdummy)上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation5. Resistor上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporat

13、ionItem nameMethod of measurementRsVh=1V, measure Ih, Rs=(Vh/Ih)/SqrSheet resistance (RsN+/P+/NW/Poly/Metal)上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationN+N+N+P WellPadPadM1Contact Resistance (RcN+/P+/Via)Item nameMethod of measurementRcVh=1V, Vl=GND, measure Ih, Rs=(Vh/Ih)

14、-(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)/NconNote: Rc need to subtract active & Metal resistor, RsMetal can be ignored due to metal resistor is very small.上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation6. Bipolar Device上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing C

15、orporationSTISTISTISTIN+P+P+N WellM1PadPadPadPsubBECWAT Item Name(以NPN為例): HfeNpn BvNpnItem nameMethod of measurementHfeIb=1uA, Vce=Vdd, Hfe=Ic/IbBvBase floating, Sweep Vce from 0V to Vcestop(3Vdd), measure Ic, Bv=VceIc=1uA上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation7. Layout Rule Check上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturi