TFT LCD黃光制程介紹

IVOCONFIDENTIALPhotoIntroductionINTArray

2023/12/17PhotoResistThinFilmGlass

ArrayProcessExposureLightPhotoMaskStripThinFilmGlassPRcoatingPhotoResistDevelopEtch2023/12/17PhotoProcessPhotoprocess:Coating--->Exposure--->DevelopmentCoating：將光阻均勻地涂布于基板表面Exposure：由紫外線透射光罩將圖形轉寫至光阻表面Development：利用堿性顯影液將紫外線照射的光阻去除以形成圖形2023/12/17ThestructureofDNSSK-1100GLinear-coating(Vacuumdry)InEUVRB&AAjetAKDryOutPost-bakeDHBInOutPre-BakeTitlerorE.E.Exp.BF90°turnInOutOutAOILorConveyorAKDryRinse(Sub.Direct)Dev.1,230,7305,9105,5102023/12/17Cleanerintroduction2023/12/17CleanerintroductionThesimpledrawingofcleaner2023/12/17PhotoProcess-Cleaner目的

:減小接觸角和減少灰塵控制參數:E-UVcleanabilityRinseflowrateMistcontrolanddryperformanceThinfilmconditionCleanerintroduction2023/12/17ThestructureofE-UVchamberCleanerintroduction2023/12/17ThemeasurementofcontactangleCleanerintroduction2023/12/17Thesimpledrawingofrollerbrush&AAjetrinsesection

Cleanerintroduction2023/12/17AAJET

Cleanerintroduction2023/12/17ThebasicprincipleofinclinedrinseCleanerintroduction2023/12/17BrushstructureCleanerintroduction2023/12/17AirknifeWaterstripperVerticaltilt60°Horizontaltilt60°Cleanerintroduction2023/12/17ThedryprocedureofAKCleanerintroduction2023/12/17AirKnifeCleanerintroduction2023/12/17Coaterintroduction2023/12/17CoaterintroductionDehydrationbake2023/12/17DehydrationbakeCoaterintroduction2023/12/17Purpose:ToIncreasetheAdhesionofPhotoresistAdhesion:HMDS(Hexamethyldisilazane);[(CH3)3Si]2NHKeyparameter:AdhesionMethodAdhesionTimeTemperatureExhaustFunction:Si-O-H----OH2+[(CH3)3Si2NHSi-O-Si-(CH3)3PhotoProcess-AdhesionCoaterintroduction2023/12/17PhotoProcess-AdhesionCoaterintroduction2023/12/17Resist:

樹脂（20%）感光劑

(PAC)（5%）溶劑（75%）添加劑

PhotoProcess-CoatingCoaterintroduction2023/12/17目的1.將MASK上的圖案轉移到膠中2.在后續(xù)工藝中保護下面的材料Coaterintroduction2023/12/17ExposureLightPositiveTypeNegativeTypeDevelopingResistThinFilmSubstrateMaskChrome正光阻：曝光后，光照到部分顯影后去除負光阻：曝光后，光照到部分顯影后保留Coaterintroduction2023/12/17樹脂惰性的聚合物（包括碳、氫、氧的有機高分子）基質，用于把PR中的不同材料聚在一起的黏合劑。給予PR的機械和化學性質（黏附性、柔順性、熱穩(wěn)定性）感光劑PR內的光敏成分，對光形式的輻射能，特別是紫外區(qū)，會發(fā)生光化學反映。Coaterintroduction2023/12/17溶劑使PR保持液體狀態(tài)，對PR的化學性質幾乎沒有影響添加劑專有化學品，用來控制和改變PR材料的特定化學性質或光響應特性，包括控制PR反射率的染色劑Coaterintroduction2023/12/17PR的物理特性分辨率對比度敏感度粘滯性黏附性抗蝕性表面張力存儲和傳送沾污和顆粒Coaterintroduction2023/12/17分辨率能夠在玻璃基板上形成符合要求的最小的特征圖形。形成的CD越小，PR的分辨能力和光刻系統就越好Coaterintroduction2023/12/17對比度PR從曝光區(qū)域到非曝光區(qū)域的過度的陡度對比度差對比度好FilmGlassPRFilmGlassPRCoaterintroduction2023/12/17敏感度PR產生良好圖形所需要的一定波長的最小能量值（MJ/C㎡），對于一定的曝光能量，PR的吸收量越大越好Coaterintroduction2023/12/17粘滯性粘滯性與時間有關，會隨著PR溶劑的揮發(fā)增加。粘滯性增加，PR流動趨勢變小，厚度會增加。Coaterintroduction2023/12/17粘附性PR與下層材料黏附之強度。如黏附性不好，會導致表面圖形的變形。Coaterintroduction2023/12/17抗蝕性PR必須保持黏附性，并在蝕刻工藝中保護下層材料。如在高溫下進行處理，還需要有熱穩(wěn)定性。Coaterintroduction2023/12/17表面張力液體中將表面分子拉向液體主體內的分子間吸引力。Coaterintroduction2023/12/17沾污和顆粒在PR涂布之前，要使用Filter，使沾污控制在最小程度Coaterintroduction2023/12/17SpinCoatingSlit+SpinCoatingslitCoaterCoatingMethodsCoaterintroduction2023/12/17

SlitCoatingCoaterintroduction2023/12/17

ExposureIntroduction

2023/12/17LocationsofUnitsMaskPellicleParticleCheckerMaskChangerMaskCassetteConsoleBoxPlateControlBoxMercuryLampMainBodyExposureIntroduction2023/12/17LayoutExposureIntroduction2023/12/17亮場掩膜版暗場掩膜版MASK（掩膜版）分類ExposureIntroduction2023/12/17材料石英：高光學透射和低溫度膨脹。鉻：沉積在掩膜版上的不透明材料。有時會在鉻表面形成一層氧化鉻抗反射層。ExposureIntroduction2023/12/17OperationModeoftheConsoleInlinemodeCommunicationbetweenMPAandI/FPlateisloadedbyI/FarmStandalonemodeNocommunicationbetweenMPAandI/FPlateisloadedbyHandConsoleMode(nouse)NocommunicationbetweenMPAandConsoleExposureIntroduction2023/12/17UM06System光罩只在Y方向移動玻璃基板可在XY方向移動梯形鏡凹面鏡凸面鏡ExposureIntroduction2023/12/17Resolutionvs.WavelengthR:resolution(minimallinewidth)K:constantλ:wavelengthNA:numericalapertureResolutionofExposureMachineTFT-LCDexposureequipmentResolution~3umExposureIntroduction2023/12/17IlluminationSystem光源：8千瓦超高壓水銀燈，2只Lamp：Standardtype--750小時，Longtype--1000小時波長：exposure----340nm~460nm[g/h/iline，436nm/405nm/365nm]alignment---536nm~600nm[d/eline，578nm/546nm]強度：可見光波長范圍（nm）紅外輻射紫外輻射700500600400ExposureIntroduction2023/12/17Mask/PlateAAAA：AutoAlignment自動對準，分為預對準(Pre)和精對準(Fine)兩種對準：maskaligntomaskstage，platealigntomask光罩對準：maskFMAmark--->stagesetmark基板對準：platealignmentmark--->maskTV-pre/finemarkExposureIntroduction2023/12/17MaskStage架構說明

Mask放到maskstage後,先由CCD(3.85X)做maskpre-alignment,接著做maskfinealignment(由maskalignmentmark去對準maskstage上的setmark—此動作由X/Y/Thetastage完成),完成以上動作後,maskstage上的LockPads會將X/Y/Thetastage固定在maskstage上,而maskstage是浮在maskguide及Yawguide上的.Setmark與mask之間隔為10um.Canonmasktype:Longmask(520X800,t=10mm),而其對應在maskstage上的硬體裝置有Ypressingcylinder及maskreferencepin.Maskstage在曝光時只做Y方向移動(scan).ExposureIntroduction2023/12/17Patechuckandmechanicalpre-alignmentsensor

1.Chucksize依玻璃大小訂做2.直放或橫放時各有3個pre-alignmentsensor3.Mechanicalpre-alignmentsensor只做玻璃相對位置計測用(touch玻璃邊緣)ExposureIntroduction2023/12/17LiftPin

1.Lift高度:chuck表面往上算50mm(四根liftpin之間的高度差為0.2mm（以下)。2.位置再現精度:±0.1mm。3.Liftstroke:55mm(上限:chuck表面往上50mm,下限:chuck表面往下5mm,即-5mm)。4.動作時間:0.9sec(0.2sec/由chuck下面-5mm移動到chuck表面

+停止時間,0.7sec/chuck表面往上移50mm)。ExposureIntroduction2023/12/17PlateAFCAFC：AutoFocusCompensation自動聚焦DOF：30um，在其范圍內的光阻曝光顯影后圖形清晰如果stage(基板承載平臺)平坦度超出規(guī)格，導致基板上光阻位于DOF之外，那么曝光顯影后會導致CD異常。DOF:30um光阻(1.5um±3%)ExposureIntroduction2023/12/17JobFlowinInlineModeJobRegistration/Download

程式選擇

MaskLoading光罩裝載

MaskUnloading光罩卸載

PlateUnloading基板卸載

PlateExposure基板曝光

PlateAutoAlignment基板對準

PlateAutoFocus基板聚焦

MaskAutoAlignment光罩對準

PlateLoading基板裝載ExposureIntroduction2023/12/17Optimize-3ActionFlowshot6shot2shot3shot5shot4shot1P1P2P3ExposureIntroduction2023/12/17Developerintroduction2023/12/17DeveloperintroductionDeveloperstructure2023/12/17Purpose:Todissolvetheexposurearea(forpositive-typeresist)Mechanism:KeyParameter:DispenseMethodTemperature(Developer)DevelopertimeDeveloperConcentrationPhotoProcess-DeveloperDeveloperintroduction2023/12/17PhotoProcess-DeveloperDeveloperintroduction2023/12/17LineWidth(

m)DevelopmentTime(sec)ProceedingofDevelopmentDeveloperintroduction2023/12/17DDS

(DeveloperDilutionSystem)

DPF-4060

(DeveloperPurificationFiltrationsystem)

NagasedeveloperrecyclesystemDeveloperintroduction2023/12/17Totalpitch2023/12/17測定座標値以Table座標値＋Camera座標來表現。測定Edge検出點(Ｘ,Ｙ)=(Ｘt＋ＸC

,Ｙt＋ＹC)Camera座標系Table座標系測定座標系ＸCＹCＸＹＸtＹtTotalpitch2023/12/17Machineconfiguration測定用CCDcameraFiberlaser測長機GlassairChucktableAircylinderstageLaserheadMicroscopeLaserautofocus防震臺xy2023/12/17LaserAF(knifeedgemethod)JustfocusFarNearPAPB2023/12/171300mm1100mm(0,0)191021725261833414234311124192728203543443651314621293022374546387151682331322439