完整word版,半導(dǎo)體微電子專(zhuān)業(yè)詞匯中英文對(duì)照

1、半導(dǎo)體微電子專(zhuān)業(yè)詞匯中英文對(duì)照、52Accelerated testing 加速實(shí)驗(yàn)Acceptor 受主Acceptor atom受主原子Accumulation 積累、堆積Accumulating contact 積累接觸Accumulation region 積累區(qū)Accumulation layer 積累層Acoustic Surface Wave 聲表面波Active region 有源區(qū)Active component 有源元Active device有源器件Activation 激活A(yù)ctivation energy 激活能Active region 有源（放大）區(qū)A/D con

2、version 模擬-數(shù)字轉(zhuǎn)換Adhesives粘接劑Admittance 導(dǎo)納Aging 老化Airborne 空載Allowed band 允帶allowance 容限，公差A(yù)lloy-junction device 合金結(jié)器件Aluminum(Aluminum) 鋁Aluminum -oxide 鋁氧化物Aluminum Nitride 氮化鋁Aluminum p assivation 鋁鈍化Ambipolar雙極的Ambient temperature 環(huán)境溫度A M light振幅調(diào)制光，調(diào)幅光 amp litude limiter 限幅器Amorphous無(wú)定形的，非Amplifi

3、er功放 放大器Analogue(Analog) comparator 模擬比較器Angstrom 埃Anneal退火Anisotropic 各向異性的Anode陽(yáng)極Antenna 天線(xiàn)Aperture 孑L徑Arsenide (As)石申Array陣列Atomic原子的Atom Clock原子鐘Attenuation 衰減Audio聲頻Auger俄歇Automatic 自動(dòng)的Automotive 汽車(chē)的Availability 實(shí)用性Avalanche 雪崩Avalanche breakdown 雪崩擊穿Avalanche excitation 雪崩激發(fā)Background carrier

4、本底載流子Background doping 本底摻雜Backward 反向Backward bias反向偏置Ball bond球形鍵合Band能帶Band gap能帶間隙Bandwidth 帶寬Bar巴條發(fā)光條Barrier 勢(shì)壘Barrier layer 勢(shì)壘層Barrier width勢(shì)壘寬度Base基極Base contact基區(qū)接觸Base stretching基區(qū)擴(kuò)展效應(yīng)Base transit time基區(qū)渡越時(shí)間Base trans port efficiency 基區(qū)輸運(yùn)系數(shù)Base-width modulation 基區(qū)寬度調(diào)制Batch批次Battery 電池Beam束光

5、束電子束B(niǎo)ench工作臺(tái)Bias偏置Bilateral switch 雙向開(kāi)關(guān)Binary code二進(jìn)制代碼Binary compound semiconductor 二元化合物半導(dǎo)體Bipolar雙極性的Bipolar Junction Transistor (BJT)雙極晶體管Bit位比特Blocking band 阻帶Body - centered 體心立方Body-centred cubic structure 體立心結(jié)構(gòu)Boltzmann波爾茲曼Bond鍵、鍵合Bonding electron 價(jià)電子Bonding pad 鍵合點(diǎn)Boron 硼B(yǎng)orosilicate glass

6、硼硅玻璃Bottom-up由下而上的Boundary condition 邊界條件Bound electron 束縛電子Bragg effect布拉格效應(yīng)Breadboard模擬板、實(shí)驗(yàn)板Break down 擊穿Break over 轉(zhuǎn)折Brillouin 布里淵 FBrillouin zone 布里淵區(qū)Buffer緩沖器Built-in 內(nèi)建的Build-in electric field 內(nèi)建電場(chǎng)Bulk體/體內(nèi)Bulk absorption 體吸收Bulk generation 體產(chǎn)生Bulk recombination 體復(fù)合Burn-in 老化Burn out 燒毀Buried c

7、hannel 埋溝Buried diffusion region隱埋擴(kuò)散區(qū)Bus總線(xiàn)Calibration校準(zhǔn)，檢定，定標(biāo)、刻度，分度Capacitance 電容Cap ture cross section 俘獲截面Capture carrier俘獲載流子Carbon dioxide (CO2)二氧化碳Carrier載流子、載波Carry bit進(jìn)位位Cascade 級(jí)聯(lián)Case管殼Cathode 陰極Cavity腔體Center中心Ceramic陶瓷（的）Channel 溝道Channel breakdown 溝道擊穿Channel current 溝道電流Channel doping 溝道

8、摻雜Channel shortening 溝道縮短Channel width溝道寬度Characteristic imp edance 特征阻抗Charge電荷、充電Charge-compensation effects 電荷補(bǔ)償效應(yīng)Charge conservation 電荷守恒Charge drive/exchange/sharing/transfer/storage 電荷驅(qū)動(dòng) /交換/共享/轉(zhuǎn)移/存儲(chǔ)Chemical etching化學(xué)腐蝕法Chemically-Polish 化學(xué)拋光Chemically-Mechanically P olish (C MP)化學(xué)機(jī)械拋光Chemical

9、 vapor depo sition (cvd)化學(xué)汽相淀積Chip芯片Chip yield芯片成品率Circuit 電路Cla mped 箝位Clamping diode 箝位二極管Cleavage pl ane 解理面Clean清洗Clock rate時(shí)鐘頻率Clock generator時(shí)鐘發(fā)生器Clock flip-flo p 時(shí)鐘觸發(fā)器Close-loop gain 閉環(huán)增益Coating涂覆涂層Coefficient of thermal exp ansion 熱膨脹系數(shù)Coherency相干性Collector集電極Collision 碰撞Compensated OP-AMP 補(bǔ)

10、償運(yùn)放Common-base/collector/emitter connection 共基極 /集電極 /發(fā)射極連接Common-gate/drain/source connection 共柵 /漏/源連接Common-mode gain 共模增益Common-mode input 共模輸入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Comp act致密的Com patibility 兼容性Comp ensation 補(bǔ)償Compensated impurities 補(bǔ)償雜質(zhì)Compensated semiconductor

11、 補(bǔ)償半導(dǎo)體Comp lementary Darlington circuit 互補(bǔ)達(dá)林頓電路CompI ementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互補(bǔ)金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Comp uter-aided design (CAD)/test(CAT)/manufacture(CAM)計(jì)算機(jī)輔助設(shè)計(jì)/測(cè)試/制造Component 元件Compound Semiconductor 化合物半導(dǎo)體Conductance 電導(dǎo)Conduction band (edge)導(dǎo)帶(底)Conduction level/s

12、tate 導(dǎo)帶態(tài)Conductor 導(dǎo)體Conductivity 電導(dǎo)率Configuration 結(jié)構(gòu)Conlomb 庫(kù)侖Constants物理常數(shù)Constant energy surface 等能面Constant-source diffusion 恒定源擴(kuò)散Contact 接觸Continuous wave 連續(xù)波Continuity equation 連續(xù)性方程Contact hole 接觸孔Contact potential 接觸電勢(shì)Controlled 受控的Converter轉(zhuǎn)換器Conveyer傳輸器Cooling 冷卻Copper interconnection syste

13、m 銅互連系統(tǒng)Corrosion 腐蝕Coupling 耦合Covalent共階的Crossover 交叉Critical臨界的Cross-section 橫斷面Crucible 坩堝Cryogenic cooling system 冷去卩系統(tǒng)Crystal defect/face/orientation/lattice 晶體缺陷 /晶面/晶向/晶Cubic crystal system 立方晶系Current density 電流密度電流漂移/驅(qū)動(dòng)/共享定制集成電路Curvature 曲率Current drift/drive/sharingCurrent Sense電流取樣Curve曲線(xiàn)C

14、ustom integrated circuitCut off截止Cylindrical 柱面的Czochralshicrystal 直立單晶Czochralski technique切克勞斯基技術(shù)（Cz法直拉晶體 J）Dangling bonds 懸掛鍵Dark current 暗電流Dead time空載時(shí)間Decade進(jìn)制Decibel (dB)分貝Decode解碼Deep acceptor level 深受主能級(jí)Deep donor level深施主能級(jí)Deep energy level 深能級(jí)Deep impurity level深度雜質(zhì)能級(jí)Deep trap深陷阱Defeat缺陷D

15、egenerate semiconductor 簡(jiǎn)并半導(dǎo)體Degeneracy 簡(jiǎn)并度Degradation 退化Degree Celsius(centigrade) /Kelvin 攝氏 / 開(kāi)氏溫度Delay延遲Density 密度Density of states 態(tài)密度Depletion 耗盡Depl etion app roximation 耗盡近似Depletion contact 耗盡接觸Depletion depth 耗盡深度Depletion effect 耗盡效應(yīng)Depletion layer 耗盡層Depletion MOS 耗盡 MOSDepletion region

16、耗盡區(qū)Deposited film 淀積薄膜Deposition process 淀積工藝Design rules設(shè)計(jì)規(guī)貝UDetector探測(cè)器Developer 顯影齊HDiamond金剛石Die芯片（復(fù)數(shù)dice）Diode二極管Dielectric Constant 介電常數(shù)Dielectric isolation介質(zhì)隔離Difference-mode input 差模輸入Differential amp lifier 差分放大器Differential capacitance 微分電容Diffraction 衍射Diffusion 擴(kuò)散Diffusion coefficient 擴(kuò)散

17、系數(shù)Diffusion constant 擴(kuò)散常數(shù)Diffusivity 擴(kuò)散率Diffusion capacitance/barrier/current/furnace 擴(kuò)散電容 /勢(shì)壘 /電流/爐Digital circuit 數(shù)字電路Dimension尺寸量鋼維，度Diode二極管Di pole domain 偶極疇Dip ole layer 偶極層Direct-co up ling 直接耦合Direct-gap semiconductor 直接帶隙半導(dǎo)體Direct transition 直接躍遷Directional antenna 定向天線(xiàn)Discharge 放電Discrete

18、component 分立元件Disorder無(wú)序的Dis play顯示器Diss ip ation 耗散Dissolution 溶解Distribution 分布Distributed capacitance 分布電容Distributed model 分布模型DispIacement 位移Dislocation 位錯(cuò)Domain 疇Donor施主Donor exhaustion 施主耗盡Dopant摻雜劑Doped semiconductor 摻雜半導(dǎo)體Doping concentration 摻雜濃度Dose劑量Double-diffusive MOS(DMOS)雙擴(kuò)散 MOSDrift漂

19、移Drift field 漂移電場(chǎng)Drift mobility 遷移率Dry etching干法腐蝕Dry/wet oxidation 干 / 濕法氧化Dose劑量Dual-polarization雙偏振，雙極化Duty cycle工作周期Dual-in-line package （ DIP） 雙列直插式圭寸裝Dynamics 動(dòng)態(tài)Dynamic characteristics 動(dòng)態(tài)屬性Dynamic imp edance 動(dòng)態(tài)阻抗Early effect厄利效應(yīng)Early failure早期失效Effect效應(yīng)Effective mass 有效質(zhì)量Electric Erase P rogra

20、mmable Read Only Memory(E2 PROM)電可擦除只讀存儲(chǔ)器Electrode 電極Electromigration 電遷移Electron affinity 電子親和勢(shì)Electron-beam 電子束Electroluminescence 電致發(fā)光Electron gas 電子氣Electron trapping center 電子俘獲中心Electron Volt (eV)電子伏Electro-optical 光電的Electrostatic 靜電的Element元素/元件/配件Elemental semiconductor 元素半導(dǎo)體Ellipse 橢圓Emitt

21、er發(fā)射極Emitter-coupled logic 發(fā)射極耦合邏輯Emitter-coupled pair 發(fā)射極耦合對(duì)Emitter follower 射隨器Empty band 空帶Emitter crowding effect 發(fā)射極集邊（擁擠）效應(yīng)Endurance test =life test 壽命測(cè)試Energy state 能態(tài)Energy momentum diagram 能量-動(dòng)量(E-K)圖Enhancement mode增強(qiáng)型模式Enhancement MOS 增強(qiáng)性 MOSEnteric （低）共溶的Environmental test 環(huán)境測(cè)試Epitaxial外

22、延的Epitaxial layer 夕卜延層Epitaxial slice 夕卜延片Epoxy環(huán)氧的Equivalent circuit 等效電路Equilibrium majority /minority carriers平衡多數(shù) /少數(shù)載流子Equi pm ent 設(shè)備Erasable Programmable ROM (EPROM)可搽取(編程)存儲(chǔ)Erbium laser摻鉺激光器Error function compiement 余誤差函數(shù)Etch刻蝕Etchant刻蝕劑Etching mask抗蝕劑掩模Excess carrier過(guò)剩載流子Excitation energy 激發(fā)能

23、Excited state 激發(fā)態(tài)Exciton 激子Exponential 指數(shù)的Extrapolation 夕卜推法Extrinsic非本征的Extrinsic semiconductor 雜質(zhì)半導(dǎo)體Fabry-Perot amplifier法布里-珀羅放大器Face - centered 面心立方Fall time下降時(shí)間Fan-in扇入Fan-out 扇出Fast recovery 快恢復(fù)Fast surface states 快表面態(tài)Feedback 反饋Fermi level 費(fèi)米能級(jí)Femi potential 費(fèi)米勢(shì)Fiber op tic 光纖Field effect tra

24、nsistor 場(chǎng)效應(yīng)晶體管Field oxide場(chǎng)氧化層Figure of merit 品質(zhì)因數(shù)Filter濾波器Filled band 滿(mǎn)帶Film薄膜Fine pitch細(xì)節(jié)距Flash memory閃存存儲(chǔ)器Flat band 平帶Flat pack扁平封裝Flatness平整度Flexible柔性的Flicker noise閃爍（變）噪聲Flip-chip倒裝芯片F(xiàn)li p- flop toggle 觸發(fā)器翻轉(zhuǎn)Floating gate 浮柵Fluoride etch氟化氫刻蝕Focal plane 焦平面Forbidden band 禁帶Formulation 歹U式，表達(dá)Forw

25、ard bias正向偏置Forward blocking /conducting 正向阻斷 /導(dǎo)通Free electron自由電子Frequency deviation noise 頻率漂移噪聲Frequency respo nse 頻率響應(yīng)Function 函數(shù)Gain增益Gallium-Arsenide(GaAs)砷化鎵Gallium Nitride 氮化鎵Gate n、柵、控制極Gate oxide柵氧化層Gate width 柵寬Gauss（ ian）高斯Gaussian distribution p rofile 高斯摻雜分布Generation-recombination產(chǎn)生-復(fù)

26、合Geometries幾何尺寸Germanium(Ge) 鍺Gold 金Graded緩變的Graded (gradual) channel緩變溝道Graded junction 緩變結(jié)Grain 晶粒Gradient 梯度Grap hene石墨烯Grating 光柵Green laser綠光激光器Ground接地Grown junction 生長(zhǎng)結(jié)Guard ring保護(hù)環(huán)Guide wave導(dǎo)波波導(dǎo)Gunn - effect狄氏效應(yīng)Gyroscope陀螺儀Hardened device輻射加固器件Harmonics 諧波Heat diffusion 熱擴(kuò)散Heat sink散熱器、熱沉Hea

27、vy/light hole band 重/輕 空穴帶Hell - effect霍爾效應(yīng)Hertz赫茲Heterojunction 異質(zhì)結(jié)Heterojunction structure 異質(zhì)結(jié)結(jié)構(gòu)Heterojunction Bi polar Transistor ( HBT )異質(zhì)結(jié)雙極型晶體High field property 高場(chǎng)特性High-performance MOS(H-MOS)高性能 MOS 器件High power 大功率Hole空穴Homojunction 同質(zhì)結(jié)Horizontal epitaxial reactor 臥式外延反應(yīng)器Hot carrier熱載流子Hybr

28、id integration 混合集成Illumination照明 照明學(xué)Image - force 鏡象力Imp act ionization 碰撞電離Imp edance 阻抗Imperfect structure 不完整結(jié)構(gòu)Implantation dose 注入齊J量Implanted ion 注入離子Impurity 雜質(zhì)Imp urity scattering 雜志散射Inch英寸Incremental resistance電阻增量（微分電阻）In-contact mask接觸式掩模Index of refraction 折射率Indium 銦Indium tin oxide (I

29、TO) 銦錫氧化物Inductance 電感Induced channel 感應(yīng)溝道Infrared紅外的Injection 注入Input power 輸入功率Insertion loss 插入損耗Insulator絕緣體Insulated Gate FET(IGFET)絕緣柵 FETIntegrated injection logic 集成注入邏輯Integration 集成、積分Integrated Circuit 集成電路Interconnection 互連Interconnection time delay 互連延時(shí)Interdigitated structure 交互式結(jié)構(gòu)In t

30、erface 界面Interferenee 干涉International system of unions 國(guó)際單位制Internally scattering 谷間散射Interpolation 內(nèi)插法Intrinsic本征的Intrinsic semiconductor 本征半導(dǎo)體Inverse op eration 反向工作In vers ion 反型Inverter倒相器Ion離子Ion beam離子束Ion etching離子刻蝕Ion implantation 離子注入Ionization 電離Ionization energy 電離能Irradiation 輻照Isolatio

31、n land 隔離島Isotropic各向同性Junction FET(JFET)結(jié)型場(chǎng)效應(yīng)管Junction isolation 結(jié)隔離Junction sp acing 結(jié)間距Junction side-wall 結(jié)側(cè)壁Laser激光器Laser diode激光二極管Latch up 閉鎖Lateral橫向的Lattice 晶格Layout版圖Lattice binding/cell/constant/defect/distortion晶格結(jié)合力 /晶胞/晶格/晶格常熟/晶格缺陷/晶格畸變Lead 鉛Leakage current (泄)漏電流Life time 壽命linearity線(xiàn)性

32、度Linked bond 共價(jià)鍵Liquid Nitrogen 液氮Liquid phase epitaxial growth technique 液相外延生長(zhǎng)技術(shù)Lithography 光刻Light Emitting Diode(LED)發(fā)光二極管Linearity線(xiàn)性化Liquid液體Lock in 鎖定Longitudinal 縱向的Long life 長(zhǎng)壽命Lumped model集總模型Magnetic 磁的Majority carrier多數(shù)載流子Mask掩膜板，光刻板Mask level掩模序號(hào)Mask set掩模組Mass - action law 質(zhì)量守恒定律Master-

33、slave D flip-flop主從 D 觸發(fā)器Matching 匹配Material 材料Maxwell麥克斯韋Mean free path平均自由程Mean time before failure (MTBF)平均工作時(shí)間Mechanical 機(jī)械的Membrane (1)薄臘，膜片 隔膜Megeto - resistance 磁阻Mesa臺(tái)面MESFET-Metal Semiconductor 金屬半導(dǎo)體 FETMetalorganic Chemical Vapor Dep osition MOCVD金屬氧化物化學(xué)汽相淀積Metallization 金屬化Metal oxide sem

34、iconductor (MOS)金屬氧化物半導(dǎo)體MeV兆電子伏Microelectronic technique 微電子技術(shù)Microelectronics 微電子學(xué)Microelectromechanical System (MEMS) 微電子機(jī)械系統(tǒng)Microwave 微波Millimeterwave 毫米波Minority carrier 少數(shù)載流子Misfit失配Mismatching 失配Mobility 遷移率Module模塊Modulate 調(diào)制Molecular crystal 分子晶體Monolithic IC 單片MOSFET金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Mount安裝Mul

35、ti plication 倍增Modulator 調(diào)制Multi-chip IC 多芯片 ICMulti-chi p module(MCM)多芯片模塊Multilayer 多層倍增因子Mult ip lication coefficientMult ip lexer 復(fù)用器Multi plier 倍增器Naked chip未封裝的芯片（裸片）Nanometer 納米Nanotechnology 納米技術(shù)Negative feedback 負(fù)反饋Negative resistance 負(fù)阻Negative-temperature-coefficient 負(fù)溫度系數(shù)Nesting 套刻N(yùn)oise

36、figure噪聲系數(shù)Nonequilibrium 非平衡Nonvolatile非揮發(fā)（易失）性Normally off/on 常閉 / 開(kāi)Nuclear 核Numerical analysis 數(shù)值分析Occupied band 滿(mǎn)帶Offset偏移、失調(diào)On standby待命狀態(tài)Ohmic contact歐姆接觸Open circuit 開(kāi)路Op erating po int 工作點(diǎn)Ope rating bias 工作偏置Operational amplifier (OPAMP)運(yùn)算放大器Optical photon 光子Optical quenching 光猝滅Optical trans

37、ition 光躍遷Optical-coupled isolator 光耦合隔離器Organic semiconductor 有機(jī)半導(dǎo)體Orientation 晶向、定向Oscillator 振蕩器Outline 外形Out-of-contact mask非接觸式掩模Out put characteristic 輸出特性O(shè)ut put po wer輸出功率Out put voltage swing 輸出電壓擺幅Overco mp ensation 過(guò)補(bǔ)償Over-current protection 過(guò)流保護(hù)Over shoot 過(guò)沖Over-voltage protection 過(guò)壓保護(hù)Ove

38、rlap 交迭Overload 過(guò)載Oscillator 振蕩器Oxide氧化物Oxidation 氧化Oxide passivation 氧化層鈍化P ackage圭寸裝Pad壓焊點(diǎn)P arameter 參數(shù)Parasitic effect 寄生效應(yīng)Parasitic oscillation 寄生振蕩P ass band 通帶Passivation 鈍化Passive compo nent 無(wú)源元件Passive device 無(wú)源器件Passive surface 鈍化界面Parasitic transistor 寄生晶體管Pattern 圖形Payload有效載荷Peak-point v

39、oltage 峰點(diǎn)電壓Peak voltage峰值電壓Permanent-storage circuit 永久存儲(chǔ)電路Period周期P ermeable - base可滲透基區(qū)Phase-lock loop 鎖相環(huán)Phase drift 相移P honon sp ectra 聲子譜Photo conduction 光電導(dǎo)Photo diode光電二極管Photoelectric cell 光電池Photoelectric effect 光電效應(yīng)Photonic devices 光子器件Photolithographic process 光刻工藝Photoluminescence 光致發(fā)光Ph

40、oto resist （光敏）抗腐蝕劑Photo mask光掩模Piezoelectric effect 壓電效應(yīng)Pin管腳Pinch off 夾斷Pinning of Fermi level費(fèi)米能級(jí)的釘扎（效應(yīng)）PI anar p rocess 平面工藝Planar transistor 平面晶體管Plasma等離子體Plane平面的Plasma等離子體Plate板電路板P-N junction pn 結(jié)Po isson equation 泊松方程Point contact 點(diǎn)接觸Polarity 極性Polycrystal 多晶Polymer semiconductor 聚合物半導(dǎo)體Pol

41、y-silicon 多晶硅Positive 正的Potential （電）勢(shì)Potential barrier 勢(shì)壘Potential well 勢(shì)阱Power electronic devices 電力電子器件Po wer diss ip ation 功耗Power transistor功率晶體管Preamplifier 前置放大器Primary flat 主平面Print-circuit board( PCB)印制電路板Probability 幾率Probe探針P rocedure 工藝P rocess 工藝Projector投影儀Propagation delay 傳輸延時(shí)Proto n

42、質(zhì)子Proximity effect 鄰近效應(yīng)Pseudo po tential method 贋勢(shì)法Pump泵浦Pu nch through 穿通Pulse triggering/modulating 脈沖觸發(fā) /調(diào)制Pulse Widen Modulator( PWM) 脈沖寬度調(diào)制Punchthrough 穿通Push-pull stage 推挽級(jí)Quality factor 品質(zhì)因子Quantization 量子化Quantum 量子Quantum efficiency 量子效應(yīng)Quantum mechanics 量子力學(xué)Quasi -Fermi level 準(zhǔn)費(fèi)米能級(jí)Quartz石英

43、Radar雷達(dá)Radiation conductivity 輻射電導(dǎo)率Radiation damage 輻射損傷Radiation flux density 輻射通量密度Radiation hardening 輻射加固Radiation protection 輻射保護(hù)Radiative - recombination 輻照復(fù)合Radio無(wú)線(xiàn)電射電射頻Radio-frequency RF 射頻Raman拉曼Random隨機(jī)Range測(cè)距Radio比率系數(shù)Ray射線(xiàn)Reactive sputtering source 反應(yīng)濺射源Real time 實(shí)時(shí)Receiver接收機(jī)Recombinatio

44、n 復(fù)合Recovery diode 恢復(fù)二極管Record記錄Recovery time恢復(fù)時(shí)間Rectifier整流器（管）Rectifying contact 整流接觸Red light 紅光Reference基準(zhǔn)點(diǎn) 基準(zhǔn) 參考點(diǎn)Refractive index 折射率Register寄存器Regulate控制 調(diào)整Relative相對(duì)的Relaxation 馳豫Relaxation lifetime 馳豫時(shí)間Relay中繼Reliability 可靠性Remote遠(yuǎn)程Rep eatability 可重復(fù)性Reproduction重復(fù)制造Residual current 剩余電流Reso

45、nance 諧振Resin樹(shù)脂Resistance 電阻Resistor 電阻器Resistivity 電阻率Regulator穩(wěn)壓管（器）Resolution 分辨率Respo nse time響應(yīng)時(shí)間Return signal回波信號(hào)Reverse反向的Reverse bias反向偏置Ribbon光纖帶Ridge waveguide 脊形波導(dǎo)Ring laser環(huán)形激光器Rotary wave 旋轉(zhuǎn)波Run運(yùn)行Samp ling circuit 取樣電路Sapp hire 藍(lán)寶石（AI2O3）Satellite valley 衛(wèi)星谷Saturated current range 電流飽和區(qū)

46、Scan掃描Scaled down按比例縮小Scattering 散射Schematic layout 示意圖，簡(jiǎn)圖Schottky肖特基Schottky barrier肖特基勢(shì)壘Schottky contact肖特基接觸Scree n篩選Scribing grid 劃片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 選擇性Self aligned自對(duì)準(zhǔn)的Self diffusion 自擴(kuò)散Semiconductor 半導(dǎo)體Semiconductor laser 半仝導(dǎo)體激光器Semiconductor-controlle

47、d rectifier 半導(dǎo)體可控硅Sensitivity 靈敏度Sensor傳感器Serial串行/串聯(lián)Series inductance 串聯(lián)電感Settle time建立時(shí)間Sheet resistance 薄層電阻Sha ping 成型Shield屏蔽Shifter移相器Short circuit 短路Shot noise散粒噪聲Shunt分流Sidewall capacitance 邊墻電容Signal信號(hào)Silica glass石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride(Si3N

48、4)氮化硅Silicon On Insulator 絕緣體上硅Silver whiskers 銀須Simple cubic 簡(jiǎn)立方Simulation 模擬Single crystal 單晶Sink熱沉Sinter燒結(jié)Skin effect趨膚效應(yīng)Slot槽隙Slow wave 慢波Smooth光滑的Subthreshold亞閾值的Solar battery/cell 太陽(yáng)能電池Solid circuit固體電路Solid Solubility 固溶度Solution 溶液Sonband 子帶Source源極Source follower 源隨器Sp ace charge空間電荷Sp ace

49、Craft宇宙飛行器Spacing 間距Sp ecific heat (PT)比熱Sp ectral 光譜Spectrum光譜（復(fù)數(shù)）Speed-power product速度功耗乘積Spherical球面的Spin自旋Split分裂Spontaneous emission 自發(fā)發(fā)射Spot斑點(diǎn)Spray噴涂Sp reading resistance 擴(kuò)展電阻Sputter 濺射Square root 平方根Stability穩(wěn)定性Stacking fault 層錯(cuò)Standard標(biāo)準(zhǔn)的Standing wave 駐波State-of-the-art 最新技術(shù)Static characteristic 靜態(tài)特性Statistical analysis 統(tǒng)計(jì)分析Steady state 穩(wěn)態(tài)Step motor步進(jìn)式電動(dòng)機(jī)Stimulated emission 受激發(fā)射Stimulated recombination 受激復(fù)合Stop band 阻帶Storage time存儲(chǔ)時(shí)間Stress應(yīng)力Strip line帶狀線(xiàn)Subband次能帶Sublimation 升華Submillimeter 亞毫米波Substrate 襯底S