標準解讀
《GB/T 44924-2024 半導(dǎo)體集成電路 射頻發(fā)射器/接收器測試方法》是一項國家標準,旨在為半導(dǎo)體集成電路中的射頻發(fā)射器和接收器提供一套統(tǒng)一的測試方法。該標準涵蓋了從設(shè)備準備到最終數(shù)據(jù)處理的全過程,確保了不同制造商之間產(chǎn)品性能評價的一致性和可比性。
在適用范圍上,此標準適用于所有類型的射頻發(fā)射器與接收器,包括但不限于移動通信、無線局域網(wǎng)以及其他需要進行射頻信號傳輸?shù)膽?yīng)用場合。它不僅限定了測試環(huán)境條件(如溫度、濕度),還詳細規(guī)定了測試所需的儀器精度要求及校準程序,以保證測試結(jié)果的準確可靠。
對于具體測試項目而言,《GB/T 44924-2024》包含了對輸出功率、頻率穩(wěn)定性、相位噪聲、調(diào)制特性等多個關(guān)鍵參數(shù)的測量指導(dǎo)。每個參數(shù)都有明確的定義說明,并給出了推薦使用的測試配置示例,幫助技術(shù)人員根據(jù)實際情況選擇合適的測試方案。
此外,該標準還強調(diào)了測試過程中需要注意的安全事項,比如防止靜電損壞器件、正確接地避免干擾等,這些都是保障測試順利進行不可或缺的部分。
如需獲取更多詳盡信息,請直接參考下方經(jīng)官方授權(quán)發(fā)布的權(quán)威標準文檔。
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- 2024-12-31 頒布
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文檔簡介
ICS31.200
CCSL56
中華人民共和國國家標準
GB/T44924—2024
半導(dǎo)體集成電路
射頻發(fā)射器/接收器測試方法
Semiconductorintegratedcircuits—
MeasuringmethodsforRFtransmitter/receiver
2024?12?31發(fā)布2025?04?01實施
國家市場監(jiān)督管理總局
國家標準化管理委員會發(fā)布
GB/T44924—2024
目次
前言··························································································································Ⅲ
1范圍·······················································································································1
2規(guī)范性引用文件········································································································1
3術(shù)語和定義··············································································································1
4一般要求·················································································································4
4.1總則·················································································································4
4.2環(huán)境要求···········································································································4
4.3測試條件···········································································································4
4.4測試系統(tǒng)及儀器設(shè)備····························································································4
4.5測試注意事項·····································································································5
5詳細要求·················································································································5
5.1mW5
動態(tài)功耗P(a)································································································
5.2dB6
功率增益G(P)·································································································
5.3ΔdB10
功率增益平坦度G(P)····················································································
5.4dB11
線性功率增益GPLIN()·······················································································
5.5ΔdB11
線性功率增益平坦度GPLIN()···········································································
5.6dBm12
輸出功率P(o)·····························································································
5.7dBm13
抗燒毀功率PKSH()························································································
5.8效率η(%)········································································································14
5.9功率增益可調(diào)范圍GR(dB)··················································································15
5.10dBc16
鏡像抑制比RIMJ()························································································
5.11dBc17
諧波抑制比RHR()························································································
5.12dBc18
本振抑制比RLO()························································································
5.13dBc19
邊帶抑制比RSB()·························································································
5.14dB20
雜散抑制比RFS()··························································································
5.15PNdBdBm21
_壓縮點CP?N()··················································································
5.16輸出二階互調(diào)截止點OIP2(dBm)·········································································23
5.17輸入二階互調(diào)截止點IIP2(dBm)··········································································26
5.18輸出三階互調(diào)截止點OIP3(dBm)·········································································26
5.19輸入三階互調(diào)截止點IIP3(dBm)··········································································28
5.20ns29
通道建立時間tON()·························································································
5.21ns30
通道關(guān)斷時間tOFF()························································································
5.2231
收發(fā)切換時間tTR······························································································
Ⅰ
GB/T44924—2024
5.23噪聲系數(shù)NF(dB)·····························································································34
5.24端口回波損耗RL(dB)/電壓駐波比VSWR·····························································37
5.25端口阻抗Z(Ω)·································································································40
5.26ns41
群時延tGD()··································································································
5.27帶內(nèi)相位非線性PNL(°)·····················································································42
5.28dBm/Hz43
噪聲基底NFL()·····················································································
5.29本振泄漏LOL(dBm)························································································44
5.30?dB45
幅度穩(wěn)定度AP(o)·······················································································
5.31相位穩(wěn)定度Δθ(°)·····························································································46
5.32°47
通道間相位一致性PSER()··················································································
5.33dB50
通道間幅度一致性AMER()··············································································
5.34I/Q°51
相位誤差PEIQ()························································································
5.35I/QdB53
幅度誤差A(yù)EIQ()·····················································································
5.36調(diào)制精度EVM(%)···························································································54
5.37鄰信道功率抑制比ACPR(dB)·············································································55
5.38dB56
通道隔離度KISO()·························································································
5.39載波泄露CL(dB)·····························································································58
Ⅱ
GB/T44924—2024
前言
本文件按照GB/T1.1—2020《標準化工作導(dǎo)則第1部分:標準化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)
定起草。
請注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機構(gòu)不承擔識別專利的責任。
本文件由中華人民共和國工業(yè)和信息化部提出。
本文件由全國集成電路標準化技術(shù)委員會(SAC/TC599)歸口。
本文件起草單位:中國電子科技集團公司第二十四研究所、重慶西南集成電路設(shè)計有限責任公司、
中國電子科技集團公司第十四研究所、中國電子科技集團公司第三十八研究所、成都振芯科技股份有
限公司、深圳市晶峰晶體科技有限公司。
本文件主要起草人:蘇良勇、王露、唐景磊、陽潤、戚園、劉丹、許娟、蘇巧、陳翔、劉曉政、范超、高青。
Ⅲ
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