標準解讀

《GB/T 44924-2024 半導(dǎo)體集成電路 射頻發(fā)射器/接收器測試方法》是一項國家標準,旨在為半導(dǎo)體集成電路中的射頻發(fā)射器和接收器提供一套統(tǒng)一的測試方法。該標準涵蓋了從設(shè)備準備到最終數(shù)據(jù)處理的全過程,確保了不同制造商之間產(chǎn)品性能評價的一致性和可比性。

在適用范圍上,此標準適用于所有類型的射頻發(fā)射器與接收器,包括但不限于移動通信、無線局域網(wǎng)以及其他需要進行射頻信號傳輸?shù)膽?yīng)用場合。它不僅限定了測試環(huán)境條件(如溫度、濕度),還詳細規(guī)定了測試所需的儀器精度要求及校準程序,以保證測試結(jié)果的準確可靠。

對于具體測試項目而言,《GB/T 44924-2024》包含了對輸出功率、頻率穩(wěn)定性、相位噪聲、調(diào)制特性等多個關(guān)鍵參數(shù)的測量指導(dǎo)。每個參數(shù)都有明確的定義說明,并給出了推薦使用的測試配置示例,幫助技術(shù)人員根據(jù)實際情況選擇合適的測試方案。

此外,該標準還強調(diào)了測試過程中需要注意的安全事項,比如防止靜電損壞器件、正確接地避免干擾等,這些都是保障測試順利進行不可或缺的部分。


如需獲取更多詳盡信息,請直接參考下方經(jīng)官方授權(quán)發(fā)布的權(quán)威標準文檔。

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文檔簡介

ICS31.200

CCSL56

中華人民共和國國家標準

GB/T44924—2024

半導(dǎo)體集成電路

射頻發(fā)射器/接收器測試方法

Semiconductorintegratedcircuits—

MeasuringmethodsforRFtransmitter/receiver

2024?12?31發(fā)布2025?04?01實施

國家市場監(jiān)督管理總局

國家標準化管理委員會發(fā)布

GB/T44924—2024

目次

前言··························································································································Ⅲ

1范圍·······················································································································1

2規(guī)范性引用文件········································································································1

3術(shù)語和定義··············································································································1

4一般要求·················································································································4

4.1總則·················································································································4

4.2環(huán)境要求···········································································································4

4.3測試條件···········································································································4

4.4測試系統(tǒng)及儀器設(shè)備····························································································4

4.5測試注意事項·····································································································5

5詳細要求·················································································································5

5.1mW5

動態(tài)功耗P(a)································································································

5.2dB6

功率增益G(P)·································································································

5.3ΔdB10

功率增益平坦度G(P)····················································································

5.4dB11

線性功率增益GPLIN()·······················································································

5.5ΔdB11

線性功率增益平坦度GPLIN()···········································································

5.6dBm12

輸出功率P(o)·····························································································

5.7dBm13

抗燒毀功率PKSH()························································································

5.8效率η(%)········································································································14

5.9功率增益可調(diào)范圍GR(dB)··················································································15

5.10dBc16

鏡像抑制比RIMJ()························································································

5.11dBc17

諧波抑制比RHR()························································································

5.12dBc18

本振抑制比RLO()························································································

5.13dBc19

邊帶抑制比RSB()·························································································

5.14dB20

雜散抑制比RFS()··························································································

5.15PNdBdBm21

_壓縮點CP?N()··················································································

5.16輸出二階互調(diào)截止點OIP2(dBm)·········································································23

5.17輸入二階互調(diào)截止點IIP2(dBm)··········································································26

5.18輸出三階互調(diào)截止點OIP3(dBm)·········································································26

5.19輸入三階互調(diào)截止點IIP3(dBm)··········································································28

5.20ns29

通道建立時間tON()·························································································

5.21ns30

通道關(guān)斷時間tOFF()························································································

5.2231

收發(fā)切換時間tTR······························································································

GB/T44924—2024

5.23噪聲系數(shù)NF(dB)·····························································································34

5.24端口回波損耗RL(dB)/電壓駐波比VSWR·····························································37

5.25端口阻抗Z(Ω)·································································································40

5.26ns41

群時延tGD()··································································································

5.27帶內(nèi)相位非線性PNL(°)·····················································································42

5.28dBm/Hz43

噪聲基底NFL()·····················································································

5.29本振泄漏LOL(dBm)························································································44

5.30?dB45

幅度穩(wěn)定度AP(o)·······················································································

5.31相位穩(wěn)定度Δθ(°)·····························································································46

5.32°47

通道間相位一致性PSER()··················································································

5.33dB50

通道間幅度一致性AMER()··············································································

5.34I/Q°51

相位誤差PEIQ()························································································

5.35I/QdB53

幅度誤差A(yù)EIQ()·····················································································

5.36調(diào)制精度EVM(%)···························································································54

5.37鄰信道功率抑制比ACPR(dB)·············································································55

5.38dB56

通道隔離度KISO()·························································································

5.39載波泄露CL(dB)·····························································································58

GB/T44924—2024

前言

本文件按照GB/T1.1—2020《標準化工作導(dǎo)則第1部分:標準化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)

定起草。

請注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機構(gòu)不承擔識別專利的責任。

本文件由中華人民共和國工業(yè)和信息化部提出。

本文件由全國集成電路標準化技術(shù)委員會(SAC/TC599)歸口。

本文件起草單位:中國電子科技集團公司第二十四研究所、重慶西南集成電路設(shè)計有限責任公司、

中國電子科技集團公司第十四研究所、中國電子科技集團公司第三十八研究所、成都振芯科技股份有

限公司、深圳市晶峰晶體科技有限公司。

本文件主要起草人:蘇良勇、王露、唐景磊、陽潤、戚園、劉丹、許娟、蘇巧、陳翔、劉曉政、范超、高青。

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