半導(dǎo)體制造裝備概述

先進(jìn)制造技術(shù)半導(dǎo)體制造裝備微電子封裝一般可分為4級,如圖所示,即:0級封裝———芯片上器件本體的互連1級封裝———芯片(1個或多個)上的輸入/輸出與基板互連2級封裝———將封裝好的元器件或多芯片組件用多層互連布線板(ＰＷＢ)組裝成電子部件,插件或小整機(jī)3級封裝———用插件或小整機(jī)組裝成機(jī)柜整機(jī)系統(tǒng)半導(dǎo)體制造裝備概述芯片制造（前道）單晶硅拉制、切片、表面處理、光刻、減薄、劃片芯片封裝（后道）測試、滴膠、Diebonding、Wirebonding、壓模半導(dǎo)體封裝的基本形式按其外部封裝型式分：雙列直插式封裝(ＤＩＰ)表面安裝技術(shù)(ＳＭＴ)

無引線陶瓷片式載體(ＬＣＣＣ)塑料有引線片式載體(ＰＬＣＣ)四邊引線扁平封裝(ＱＦＰ)四邊引線塑料扁平封裝(ＰＱＦＰ)平面陣列型(ＰＧＡ）球柵陣列封裝(ＢＧＡ)Chiptosubstrateinterconnecttechnologies按芯片片的內(nèi)內(nèi)部連連接方方式來來分外引線線鍵合合外引線線鍵合合過程程示意意圖將帶引引線的的芯片片從載載帶上上切下下的示示意圖圖ＴＡＢＢ技術(shù)術(shù)中的的載帶帶概括而而言,電電子封封裝技技術(shù)已已經(jīng)歷歷了四四代,現(xiàn)現(xiàn)正在在進(jìn)入入第五五代。第一代代：60年年代前前采用用的是是接線線板焊焊接的的方式式,框架架為電電路板板,主要要插裝裝元件件是電電子管管。第二代：60年代采采用穿孔式式印刷電路路板(ＰＣＣＢ)封裝裝,主要要元件是晶晶體管和柱柱型元件。。第三代：70年代代用自動插插裝方式將將ＤＩＰ為為代表的集集成電路封封裝在ＰＣＣＢ板上,這是穿穿孔式封裝裝技術(shù)的全全盛時期。。第四代：從80年代開始始,采用用ＳＭＴ將將表面安裝裝元件(ＳＭＣ)和表面安安裝器件(ＳＭＤＤ)安裝在在ＰＣＢ表表面上。這這一封裝技技術(shù)的革命命改變了元元器件和電電子產(chǎn)品的的面貌。第五代：這是90年代顯顯露頭角的的微封裝技技術(shù),是是上一代封封裝技術(shù)的的發(fā)展和延延伸,是是將多層ＰＰＣＢ技術(shù)術(shù)、高密度度互連技術(shù)術(shù)、ＳＭＴＴ、微型元元器件封裝裝技術(shù)綜合合并發(fā)展,其代表表性技術(shù)就就是金屬陶陶瓷封裝(ＭＣＰＰ),典型型產(chǎn)品是ＭＭＣM。最最近由于系系統(tǒng)級芯片片(ＳＯＯＣ)和全全片規(guī)模集集成(ＷＷＳＩ)技技術(shù)的發(fā)展展,微電電子封裝技技術(shù)正孕育育著重大的的突破半導(dǎo)體后封封裝的發(fā)展展趨勢向表面安裝裝技術(shù)(ＳＭＴ)發(fā)展1988年年ＳＭＴ技技術(shù)約占封封裝市場份份額的17.5%,1993年年占44%,1998年占75%。。傳統(tǒng)的雙雙列直插封封裝所占份份額越來越越小,取取而代之的的是表面安安裝類型的的封裝,如有引線線塑料片式式載體,無引線陶陶瓷片式載載體,四四邊引線塑塑料扁平封封裝,塑塑料球柵陣陣列封裝(ＰＢＧＧＡ)和陶陶瓷球柵陣陣列封裝(ＣＢＧＧＡ)等,尤其是是ＰＱＦＰＰ和ＢＧＡＡ兩種類型型最具典型型.向高密度發(fā)發(fā)展目前,陶陶瓷外殼(ＣＣＧＧＡ)已達(dá)達(dá)1089只管腳腳、ＣＢＧＧＡ達(dá)625只管管腳、間距距達(dá)0.5ｍｍ、、ＰＱＦＰＰ達(dá)376只管腳腳、ＴＢＧＧＡ達(dá)1000只管管腳。根據(jù)美國ＳＳＩＡ發(fā)展展規(guī)劃,到2007年,最大芯片片尺寸將增增大到1000ｍｍｍ*2,同時每枚枚芯片上的的輸入/輸出數(shù)最最多將達(dá)到到5000個個,焊點點尺寸將縮縮小到0.127ｍｍ以下下從單芯片封封裝向多芯芯片封裝發(fā)發(fā)展ＭＣＭ起步步于90年代初,由于ＭＭＣＭ的高高密度、高高性能和高高可靠性而而倍受青睞睞。受到世世界各國的的極大關(guān)注注,紛紛紛投入巨額額資金,如美國政政府3年年投入5億美元,ＩＢＭＭ在10年投入入10億美元來來發(fā)展ＭＣＣＭ,據(jù)據(jù)預(yù)測,1999年全全球ＭＣＭＭ產(chǎn)品銷售售額將達(dá)200億美元元。目前最最高水平的的ＭＣＭ——Ｃ是ＩＢＢＭ的產(chǎn)品品,200ｍｍｍ*2、、78層層、300多萬萬個通孔,1400ｍ互連線線,1800只管腳腳,200Ｗ功耗由陶瓷封裝裝向塑料封封裝發(fā)展在陶瓷封裝裝向高密度度,多引引線和低功功耗展的同同時,越越來越多的的領(lǐng)域正在在由塑料封封裝所取代代。而且,新的塑塑料封裝形形式層出不不窮,目目前以ＰＱＱＦＰ和ＰＰＢＧＡ為為主,全全部用于表表面安裝,這些塑塑料封裝占占領(lǐng)著90%以以上的市場場高密度封裝裝中的關(guān)鍵鍵技術(shù)從技術(shù)發(fā)展展觀點來看看,作為為高密度封封裝的關(guān)鍵鍵技術(shù)主要要有:ＴＴＣＰ,ＢＧＡＡ,ＦＣＣＴ,ＣＣＳＰ,ＭＣＭ和和三維封裝裝載帶封裝它可以提供供超窄的引引線間距和和很薄的封封裝外形,且在ＰＰＣＢ板上上占據(jù)很小小的面積,可用于于高Ｉ/ＯＯ數(shù)的ＡＳＳＩＣ和微微處理器,東芝公公司1996年問問世的筆記記本電腦中中就使用了了ＴＣＰ承承載ＣＰＵＵ,其引引線間距0.25ｍｍ,焊接精精度為±30μμｍ,據(jù)報道,最小間間距可達(dá)0.15ｍｍ球柵陣列封封裝(BGA)ＢＧＡ技術(shù)術(shù)的最大特特點是器件件與ＰＣＢＢ板之間的的互連由引引線改為小小球,制制作小球的的材料通常常采用合金金焊料或有有機(jī)導(dǎo)電樹樹脂。采用用ＢＧＡ技技術(shù)容易獲獲得Ｉ/ＯＯ數(shù)超過600個的封裝裝體。由于于ＢＧＡ完完全采用與與ＱＦＰ相相同的ＳＭＭＴ回流焊焊工藝,避免了ＱＱＦＰ中的的超窄間距距,可以以提供較大大的焊盤區(qū)區(qū),因此此使焊接工工藝更加簡簡單,強(qiáng)強(qiáng)度大大提提高,可可靠性明顯顯改善ＢＧＡ的尺尺寸通常大大于ＣＳＰＰ(芯片規(guī)規(guī)模封裝),在21～～40ｍｍｍ之間。。可分為塑塑料ＢＧＡＡ(ＰＢＧＧＡ)、陶陶瓷ＢＧＡＡ(ＣＢＧＧＡ)或載載帶ＢＧＡＡ(ＴＢＧＧＡ)。在在ＰＢＧＡＡ中,通通常用引線線鍵合采用用焊球或引引線鍵合將將芯片貼在在陶瓷基板板上;在在ＴＢＧＡＡ中,用用標(biāo)準(zhǔn)ＴＡＡＢ內(nèi)引線線鍵合工藝藝或焊球?qū)⑿酒N在在其帶狀框框架上芯片規(guī)模封封裝與芯片片尺寸封裝裝(ＣＳＳＰ)芯片規(guī)模封封裝與芯片片尺寸封裝裝統(tǒng)稱為ＣＣＳＰ,它被認(rèn)為為是本世紀(jì)紀(jì)先進(jìn)封裝裝的主流技技術(shù)。在芯芯片規(guī)模封封裝中,封裝體的的尺寸是芯芯片尺寸的的1.2倍以下;芯片尺尺寸封裝中中封裝體的尺寸與與芯片尺寸寸基本相當(dāng)當(dāng)。這是在在電路板面面積不變的的前提下,希望更更換大芯片片的集成電電路時提出出的。在這這種情況下下,將框框架引線伸伸展到芯片片上方形成成芯片引線線(ＬＯＯＣ),封封裝尺寸不不變,芯芯片面積增增大,封封裝體面積積與芯片面面積的比值值變小多芯片組件件(ＭＣＣＭ)將多只合格格的裸芯片片(ＫＧＧＤ)直接接封裝在多多層互連基基板上,并與其它它元器件一一起構(gòu)成具具有部件或或系統(tǒng)功能能的多芯片片組件(ＭＣＭ),已成為為蜚聲全球球的90年代代表表性技術(shù)。。MCM封裝COB----ChipOnBoardChiponBoard----COBDieBondingHistoryandapplicationsofwirebondingWirebondingistheearliesttechniqueofdeviceassembly,whosefirstresultwaspublishedbyBellLaboratoriesin1957.Sinethen,thetechniquehasbeenextremelydevelopedAdvantageFullyautomaticmachineshavebeendevelopedforvolumeproduction.Bondingparameterscanbepreciselycontrolled;mechanicalpropertiesofwirescanbehighlyreproduced.Bondingspeedcanreach100-125mspereachwireinterconnection(twoweldsandawireloop).Mostreliabilityproblemscanbeeliminatedwithproperlycontrolledandmuchimprovedtools(capillariesandwedges)andprocesses.Specificbondingtoolsandwirescanbeselectedbypackagingengineerstomeettherequirements.Infrastructureofthetechniquehasbeencomprisedbylargewirebondingknowledge,manufacturingpeople,equipmentvendersandmaterials.Themostpopularapplicationsthatusewirebondingare:Singleandmultitieredcofiredceramicandplasticballgridarrays(BGAs),singlechipandmultichipCeramicandplasticquadflatpackages(CerQuadsandPQFPs)Chipscalepackages(CSPs)Chiponboard(COB)BallbondWedgebondWirebonding的基基本形形式Firstandsecondbondcomparison.(A)Ballbondingfirstbond.(B)Ballbondingsecondbond:stitchbondandtailbond.(C)Wedgebondingfirstbond.(D)Wedgebondingsecondbond.Wedgebondthebondingprocesscanbedefinedtothreemajorprocesses:thermocompressionbonding(T/C)ultrasonicbonding(U/S)thermosonicbonding(T/S)asshowninTable1-1BallBondingThecapillariesaretypically1.585mmindiameterand11.1mmlong.Theyhavealargeentryholeatthetopandthentheholetapersdowntoasmallholediametertypicallybetween38-50mm,40-μmpadpitchballandwedgefirstbondcomparison.Schematicofdifferentlooping.(A)Ballbondinglooping.(B)Traditionalwedgeradialbondinglooping.(C)WedgebondingConstantGaplooping.40mmpitchfirstbond.40mmlooping.Shortwiresaretoground.Longwiresaretotheleads.Wedgestitchbonding.LimitationofwirebondingFortheapplicationofwirebondingmethod,terminalsofchipshavetobearrangedattheperipheryofthechips,otherwiseshortcircuitiseasilycaused.Therefore,wirebondingtechniqueisdifficultforhighI/O(>500)interconnections.BondingparametersBondingparametersareextremelyimportantbecausetheycontrolthebondingyieldandreliabilitydirectly.Thekeyvariablesforwirebondinginclude:·Bondingforceandpressureuniformity·Bondingtemperature·Bondingtime·UltrasonicfrequencyandpowerBonddesignBallbonding·Ballsizeisapproximately2to3timesthewirediameter,1.5timesforsmallballapplicationswithfinepitches,and3to4timesforlargebondpadapplication.·Bondsizeshouldnotexceed3/4ofthepadsize,about2.5to5timesthewirediameter,dependingonthegeometryandmovingdirectionofcapillaryduringbonding.·Loopheightsof150umarenowcommon,butverydependingonthewirediameterandapplications.·Looplengthshouldbelessthan100timesthewirediameter.However,insomecases,highI/Osforinstance,wirelengthshavetoincreasetomorethan5mm.Thewirebondermustsuspendthelengthofwirebetweenthedieandleadframewithoutverticalsaggingorhorizontalswaying.Wedgebonding·Ahigh-strengthwedgebondispossibleeventhebondisonly2-3mmwiderthanwirediameter.·Padlengthmustsupportthelongdimensionofthewedgebondaswellasthetail.·Thepad'slongaxisshouldbeorientedalongtheintendedwirepath.·Bondpitchmustbedesignedtomaintainconsistentdistancebetweenwires.CleaningToensurebondabilityandreliabilityofwirebond,oneofthecriticalconditionsisthatthebondingsurfacemustbefreeofanycontaminants.Thereforecleaningisanimportantworkbeforebonding.Themethodusuallyadaptedismolecularcleaningmethod,plasmaorUV-ozonecleaningmethod.BondevaluationDestructivebondpulltest(Method2011)Internalvisual(Method2010;TestconditionAandB)Delaymeasurements(Method3003)Nondestructivebondpulltest(Method2023)BallbondsheartestConstantacceleration(Method2001;TestconditionE)Randomvibration(Method2026)Mechanicalshock(Method2002)Stabilizationbake(Method1008)Moistureresistance(Method1004)Destructivebondpulltest(Method2011)Ifboththebondsareatthesamelevelandthehookisappliedatthecenter,theforcescanberepresentedWhenthebothanglesare30o,thepullforceisequaltothebreakload.Thefailureduringpulltestmayoccuratoneofthefivepositionsinthewirebondstructure:A.LiftofffirstbondB.WirebreakattransitionfirstbondC.WirebreakmidspanD.WirebreakattransitionsecondbondE.LiftoffsecondbondWhenproperlypulled,thebondshouldfailatBorD.IffailuresoccuratA,C,orE,thenthebondingparameters,metallization,bondingmachine,bondingtool,hook,hastobereviewed.Flip-ChipTechnologyAdvantages:·Smallersize:SmallerICfootprint(onlyabout5%ofthatofpackagedICe.g.quadflatpack),reducedheightandweight.·Increasedfunctionality:TheuseofflipchipsallowanincreaseinthenumberofI/O.I/Oisnotlimitedtotheperimeterofthechipasinwirebonding.Anareaarraypadlayoutenablesmoresignal,powerandgroundconnectionsinlessspace.Aflipchipcaneasilyhandlemorethan400pads.·Improvedperformance:Shortinterconnectdeliverslowinductance,resistanceandcapacitance,smallelectricaldelays,goodhighfrequencycharacteristics,thermalpathfromthebacksideofthedie.·Improvedreliability:Epoxyunderfillinlargechipsensureshighreliability.Flip-chipscanreducethenumberconnectionsperpinfromthreetoone.·Improvedthermalcapabilities:Becauseflipchipsarenotencapsulated,thebacksideofthechipcanbeusedforefficientcooling.·Lowcost:Batchbumpingprocess,costofbumpingdecreases,costreductionsintheunderfill-processDisadvantages:·Difficulttestingofbaredies.·Limitedavailabilityofbumpedchips.·ChallengeforPCBtechnologyaspitchesbecomeveryfineandbumpcountsarehigh.·ForinspectionofhiddenjointsanX-rayequipmentisneeded.·WeakprocesscompatibilitywithSMT.·Handlingofbarechipsisdifficult.·Highassemblyaccuracyneeded.·Withpresentdaymaterialsunderfillingprocesswithaconsiderablecuringtimeisneeded.·Lowreliabilityforsomesubstrates.·Repairingisdifficultorimpossible.底部填充充工藝(UnderfillingProcess）溫度膨脹脹系數(shù)小小于3ppm/℃℃的硅器器件直接接同有機(jī)機(jī)物印制制線路板板(溫溫度膨脹脹系數(shù)在在18～50ppm/℃)壓接在在一起,會產(chǎn)產(chǎn)生嚴(yán)重重的熱機(jī)應(yīng)力力和疲勞勞,俗俗稱“熱熱機(jī)失配配底部填充充料鎖住住倒裝片片和印制制板示意意圖Flipchipjoiningusingadhesives(isotropic,anisotropic,nonconductive)Flipchipjoiningbythermocompression.FlipchipthermosonicjoiningFlipchipbondingusingthermocompressionFlipchipprocessbysolderjoining·diepreparing(testing,bumping,dicing)·substratepreparing(fluxapplicationorsolderpasteprinting)·pick,alignmentandplace·reflowsoldering·cleaningoffluxresidues(optional)·underfilldispensing·underfillcuring.FlipchipjoiningusingadhesivesIntroductiontoCSPTechnologyDescriptionofvarioustypesofCSPsBallGridArray(BGA)TechnologyItisanICpackageforactivedevicesintendedforsurfacemountapplicationsItisanareaarraypackage,i.e.utilizingwholeorpartofthedevicefootprintforinterconnectionsTheinterconnectionsaremadeofballs(spheres)ofmostoftenasolderalloyorsometimesothermetalsMorespecifically,theBGApackageusuallyfulfilsthefollowingadditionalrequirements:Thelengthofthepackagebody(mostoftensquare)rangesfrom7to50mmLeadcountsover1000possible,but50to500rangemostcommontodayThepitch,i.ecenter-to-centerdistance,oftheballsisgenerallybetween1.0and1.5mmFigure2.A160-lead0.3mm(11.8mil)pitchQFPplacedonagridof1.5mmpitchspheres(bottomsideofaPBGAS225).Figure5.Across-sectionofaTape(orTAB)BGA-TBGA.Across-sectionofaSuperBGA-SBGA.9、靜靜夜夜四四無無鄰鄰，，荒荒居居舊舊業(yè)業(yè)貧貧。。。。12月月-2212月月-22Wednesday,December21,202210、雨雨中中黃黃葉葉樹樹，，燈燈下下白白頭頭人人。。。。03:10:2003:10:2003:1012/21/20223:10:20AM11、以我獨獨沈久，，愧君相相見頻。。。12月-2203:10:2003:10Dec-2221-Dec-2212、故人江江海別，，幾度隔隔山川。。。03:10:2003:10:2003:10Wednesday,December21,202213、乍見翻翻疑夢，，相悲各各問年。。。12月-2212月-2203:10:2003:10:20December21,202214、他鄉(xiāng)鄉(xiāng)生白白發(fā)，，舊國國見青青山。。。21十十二二月20223:10:20上上午03:10:2012月月-2215、比不不了得得就不不比，，得不不到的的就不不要。。。。十二月月223:10上上午午12月月-2203:10December21,202216、行動動出成成果，，工作作出財財富。。。2022/12/213:10:2003:10:2021December202217、做前，，能夠環(huán)環(huán)視四周周；做時時，你只只能或者者最好沿沿著以腳腳為起點點的射線線向前。。。3:10:20上午午3:10上午午03:10:2012月-229、沒有失失敗，只只有暫時時停止成成功！。。12月-2212月-22Wednesday,December21,202210、很多事事情努力力了未必必有結(jié)果果，但是是不努力力卻什么么改變也也沒有。。。03:10:2003:10:2003:1012/21/20223:10:20AM11、成功就就是日復(fù)復(fù)一日那那一點點點小小努努力的積積累。。。12月-2203:10:2003:10Dec-2221-Dec-2212、世間成成事，不不求其絕絕對圓滿滿，留一一份不足足，可得得無限完完美。。。03:10:2103:10:2103:10Wednesday,December21,202213、不不知知香香積積寺寺，，數(shù)數(shù)里里入入云云峰峰。。。。12月月-2212月月-2203:10:2103:10:21December21,202214、意意志志堅堅強(qiáng)強(qiáng)的的人人能能把把世世界界放放在在手手中中像像泥泥塊塊一一樣樣任任意意揉揉