S2D-E352T;S2M-E352T;S2B-E352T;S2G-E352T;S2J-E352T;中文規(guī)格書,Datasheet資料

S2AthruS2M

VishayGeneralSemiconductor

SurfaceMountGlassPassivatedRectifier

FEATURES

?Lowprofilepackage

?Idealforautomatedplacement

?Glasspassivatedchipjunction

?Lowforwardvoltagedrop

?Lowleakagecurrent

?Highforwardsurgecapability

?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof

260°C

DO-214AA(SMB)

?AEC-Q101qualified

?Materialcategorization:Fordefinitionsofcompliance

pleasesee/doc?99912

TYPICALAPPLICATIONS

Foruseingeneralpurposerectificationofpowersupplies,

inverters,convertersandfreewheelingdiodesforconsumer,

automotiveandtelecommunication.

PRIMARYCHARACTERISTICS

IF(AV)

1.5A

MECHANICALDATA

VRRM

50Vto1000V

50A

IFSM

Case:DO-214AA(SMB)

IR

1.0μA

MoldingcompoundmeetsUL94V-0flammabilityrating

BaseP/N-E3-RoHScompliant,commercialgrade

BaseP/NHE3-RoHScompliant,AEC-Q101qualified

VF

1.15V

TJmax.

150°C

Terminals:Mattetinplatedleads,solderableper

J-STD-002andJESD22-B102

E3suffixmeetsJESD201class1Awhiskertest,HE3suffix

meetsJESD201class2whiskertest

Polarity:Colorbanddenotescathodeend

MAXIMUMRATINGS(TA=25°Cunlessotherwisenoted)

PARAMETER

SYMBOL

S2A

SA

50

S2B

SB

S2D

SD

S2G

SG

S2J

SJ

S2K

SK

S2M

SM

UNIT

Devicemarkingcode

Maximumrepetitivepeakreversevoltage

MaximumRMSvoltage

VRRM

VRMS

100

70

200

140

200

400

280

600

420

600

800

560

800

1000

700

V

V

35

MaximumDCblockingvoltage

VDC

50

100

400

1.5

1000

V

A

MaximumaverageforwardrectifiedcurrentatTL=100°C

IF(AV)

Peakforwardsurgecurrent8.3mssinglehalfsine-wave

superimposedonratedload

IFSM

50

A

Operatingandstoragetemperaturerange

TJ,TSTG

-55to+150

°C

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S2AthruS2M

VishayGeneralSemiconductor

ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisenoted)

PARAMETER

TESTCONDITIONS

SYMBOL

S2A

S2B

S2D

S2G

S2J

S2K

S2M

UNIT

Maximuminstantaneous

forwardvoltage

1.5A

VF

1.15

V

TA=25°C

1.0

MaximumDCreversecurrent

atratedDCblockingvoltage

IR

μA

TA=125°C

125

I=0.5A,IR=1.0A,

Typicalreverserecoverytime

Typicaljunctioncapacitance

F

I=0.25A

trr

2.0

16

μs

rr

4.0V,1MHz

CJ

pF

THERMALCHARACTERISTICS(TA=25°Cunlessotherwisenoted)

PARAMETER

SYMBOL

S2A

S2B

S2D

S2G

S2J

S2K

S2M

UNIT

RJA

RJL

53

16

Typicalthermalresistance(1)

°C/W

Note

(1)ThermalresistancefromjunctiontoambientandfromjunctiontoleadmountedonP.C.B.with0.3"x0.3"(8.0mmx8.0mm)copperpad

areas

ORDERINGINFORMATION(Example)

PREFERREDP/N

UNITWEIGHT(g)

0.096

PREFERREDPACKAGECODE

BASEQUANTITY

DELIVERYMODE

S2J-E3/52T

52T

5BT

750

7"diameterplastictapeandreel

13"diameterplastictapeandreel

S2J-E3/5BT

0.096

3200

S2JHE3/52T(1)

S2JHE3/5BT(1)

0.096

0.096

52T

5BT

750

7"diameterplastictapeandreel

13"diameterplastictapeandreel

3200

Note

(1)AEC-Q101qualified

RATINGSANDCHARACTERISTICSCURVES

(TA=25°Cunlessotherwisenoted)

1.75

50

ResistiveorInductiveLoad

T=100°C

L

8.3msSingleHalfSine-Wave

)

1.50

A

)

A

(

40

30

20

10

0

t

(

n

t

e

n

1.25

r

e

r

r

u

r

C

u

C

e

1.00

d

g

r

r

w

u

a

S

d

r

0.75

0.50

0.25

0

o

r

F

a

w

r

e

g

a

60HzResistiveor

InductiveLoad

P.C.B.Mounted

o

F

r

e

k

v

a

e

P

A

0.27"x0.27"(7.0mmx7.0mm)

CopperPadAreas

50

70

90

110

130

150

1

10

100

LeadTemperature(°C)

NumberofCyclesat60Hz

Fig.1-ForwardCurrentDeratingCurve

Fig.2-MaximumNon-RepetitivePeakForwardSurgeCurrent

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S2AthruS2M

VishayGeneralSemiconductor

10

100

10

1

)

T=150°C

J

A

(

t

n

)

F

e

p

r

r

(

T=125°C

J

u

e

c

n

a

t

C

d

1

r

a

i

w

r

c

a

p

a

C

o

F

T=25°C

J

s

u

o

e

n

a

n

0.1

0.01

o

i

t

c

n

u

J

t

n

a

t

s

n

I

0.3

0.50.70.91.1

1.3

0.1

1

10

100

InstantaneousForwardVoltage(V)

ReverseVoltage(V)

Fig.3-TypicalInstantaneousForwardCharacteristics

Fig.5-TypicalJunctionCapacitance

1000

100

)

)

μ

W

/

A

T=150°C

J

C

(

t

100

°

n

(

e

e

c

r

r

n

a

d

e

p

m

u

C

T=125°C

J

e

10

s

r

e

v

I

10

e

l

a

R

m

1

s

u

o

e

n

a

r

e

h

T

T=25°C

J

t

t

0.1

e

n

i

a

s

t

n

s

a

n

I

r

T

0.01

1

0

20

40

60

80

100

0.01

0.1

1

10

100

PercentofRatedPeakReverseVoltage(%)

t-PulseDuration(s)

Fig.4-TypicalReverseCharacteristics

Fig.6-TypicalTransientThermalImpedance

PACKAGEOUTLINEDIMENSIONSininches(millimeters)

DO-214AA(SMB)

CathodeBand

MountingPadLayout

0.085(2.159)MAX.

0.086(2.20)

0.077(1.95)

0.155(3.94)

0.130(3.30)

0.086(2.18)MIN.

0.060(1.52)MIN.

0.180(4.57)

0.160(4.06)

0.012(0.305)

0.006(0.152)

0.220(5.59)REF.

0.096(2.44)

0.084(2.13)

0.060(1.52)

0.030(0.76)

0.008(0.2)

0(0)

0.220(5.59)

0.205(5.21)

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