設計參考、源碼手冊1746個zhcs

bq20z655-bq20z655-ZHCS382–AUGUSTImpedanceTrackSBS1.1查詢樣品:bq20z655-特 應下一代已申請專利的ImpedanceTrack?技術可 –電池誤差低于 工業(yè)設SBS2系列至4系列鋰離子與鋰聚合物電池的高靈活 說 支持超低功耗模式的強大8位RISC IC技術，采用獲專利的ImpedanceTrack?技術， 影響充電FET的正常工 –電壓,電流,和溫 符合JEITA標 整個使

封裝44TSSOP(DBT44TSSOP(DBT卷－40°Cbq20z655-bq20z655-如欲了解封裝及訂購信息，敬請查看本文檔末的“封裝選項附錄”，或登錄TI進行查詢Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddierstheretoappearsattheendofthisdatasheet.Copyright?2011,TexasInstrumentsImpedanceTrackisaCopyright?2011,TexasInstrumentsPRODUCTIONDATAinformationiscurrentasofpublicationdate.ProductsconformtospecificationsperthetermsoftheInstrumentsstandardwarranty.Productionprocessingdoes EnglishDataSheet:necessarilyincludetestingofallThisintegratedcircuitcanbedamagedbyESD.TexasInstruments mendsthatallintegratedcircuitsbehandledwithappropriateprecautions.Failuretoobserveproperhandlingandinstallationprocedurescancausedamage.ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.Precisionintegratedcircuitsmaybemoresusceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.THERMALTHERMALbq20z655-44θJA,HighJunction-to-ambientthermalJunction-to-case(top)thermalJunction-to-boardthermalJunction-to-topcharacterizationparameterJunction-to-boardcharacterizationparameterJunction-to-case(bottom) Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,Thejunction-to-ambientthermalundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high-Kboard,asspecifiedinJESD51-7,inanenvironmentdescribedinJESD51-2a.Thejunction-to-case(top)thermalisobtainedbysimulatingacoldtetestonthepackagetop.NospecificJEDEC-standardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88.Thejunction-to-boardthermalisobtainedbysimulatinginanenvironmentwitharingcoldtefixturetocontrolthePCBtemperature,asdescribedinJESD51-8.Thejunction-to-topcharacterizationparameter,ψJT,estimatesthejunctiontemperatureofadeviceinarealsystemandisextractedfromthesimulationdataforobtainingθJA,usingaproceduredescribedinJESD51-2a(sections6and7).Thejunction-to-boardcharacterizationparameter,ψJB,estimatesthejunctiontemperatureofadeviceinarealsystemandisextractedfromthesimulationdataforobtainingθJA,usingaproceduredescribedinJESD51-2a(sections6and7).Thejunction-to-case(bottom)thermalisobtainedbysimulatingacoldtetestontheexposed(power)pad.NospecificJEDECstandardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88.PACKAGEPINOUT(TOPVIEW)

LED5/

LED4/ LED2/ LED1/Figure1.PackageTYPICALLCDFigure2showsatypicalLCDFigure2.TypicalLCDTERMINAL1OHighsideN-chandischargeFETgate2IA,Batterypackinputvoltagesenseinput.Italsoservesasdevicewakeupwhendeviceisinshutdown3PPositivedevicesupplyinput.ConnecttothecenterconnectionoftheCHGFETandDSGFETtoensuredevicesupplyeitherfrombatterystackorbatterypackinput4OP-chanpre-chargeFETgate5Highvoltagegeneralpurposeopendrainoutput.Canbeconfiguredtobeusedinpre-charge6IPre-chargemodesettinginput.ConnecttoPACKtoenable0vpre-chargeusingchargeFETconnectedatCHGpin.ConnecttoVSStodisable0-Vpre-chargeusingchargeFETconnectedatCHGpin.7PNegativesupplyvoltageinput.ConnectallVSSpinstogetherforoperationof8P3.3-Vregulatoroutput.Connectatleasta2.2-μFcapacitortoREG33and9PThermistorbiassupply—Internalcellvoltagemultiplexerandamplifieroutput.Connecta0.1-μFcapacitortoVCELL+andAlertoutput.Incaseofshortcircuitcondition,overloadconditionandwatchdogtimeoutthispinwillbetriggered.—Output/opendrain:LCDcommon1stThermistorvoltageinputconnectiontomonitor2ndThermistorvoltageinputconnectiontomonitorIActivelowinputtosensesysteminsertion.TypicallyrequiresadditionalESDIActivelowinputtodetectsecondaryprotectorstatus,andtoallowthebq20z655-R1toreportthestatusofthe2ndlevelprotectioninput.Activehighoutputtoadditionallevelofsafetyprotection;e.g.,fuseSMBusdataopen-drainbidirectionalpinusedtotransferaddressanddatatoandfromthe—AlogicalhighonthispinonlyaffectsthenormaloperationonthechargeFETwhenthebatteryisincharge/relaxmode.Foralogiclow,thenormalbq20z655-R1firmwarecontrolsthechargeFET.SMBusclockopen-drainbidirectionalpinusedtoclockthedatatransfertoandfromtheIInput:InLEDmode,thisisthedisyenablePNegativesupplyvoltageinput.ConnectallVSSpinstogetherforoperationofIOutput/opendrain:LED1currentsink.LCDsegmentIOutput/opendrain:LED2currentsink.LCDsegmentIOutput/opendrain:LED3currentsink.LCDsegmentIOutput/opendrain:LED4currentsink.LCDsegmentIOutput/opendrain:LED5currentsink.LCDsegmentCoulombcounterdifferentialinput.ConnecttoonesideofthesenseCoulombcounterdifferentialinput.ConnecttoonesideofthesenseIMasterresetinputthatsthedeviceintoresetwhenheldlow.Mustbeheldhighfornormaloperation.ConnecttoRESETforcorrectoperationofdevicePNegativesupplyvoltageinput.ConnectallVSSpinstogetherforoperationofP2.5Vregulatoroutput.Connectatleasta1-mFcapacitortoREG25andPRAM/Registerbackupinput.ConnectacapacitortothispinandVSStoprotectlossofRAM/Registerdataincaseofshortcircuitcondition.PNegativesupplyvoltageinput.ConnectallVSSpinstogetherforoperationofOResetoutput.ConnecttoShortcircuitandoverloaddetectiondifferentialinput.ConnecttosenseShortcircuitandoverloaddetectiondifferentialinput.Connecttosense(1)I=Input,IA=oginput,I/O=Input/output,I/OD=Input/Open-drainoutput,O=Output,OA=ogoutput,P=TERMINALFUNCTIONS IA,CellvoltagesenseinputandcellbalancinginputforthenegativevoltageofthebottomcellincellIA,Cellvoltagesenseinputandcellbalancinginputforthepositivevoltageofthebottomcellandthenegativevoltageofthesecondlowestcellincellstack.IA,Cellvoltagesenseinputandcellbalancinginputforthepositivevoltageofthesecondlowestcellincellstackandthenegativevoltageofthesecondhighestcellin4cellapplications.IA,Cellvoltagesenseinputandcellbalancinginputforthepositivevoltageofthesecondhighestcellandthenegativevoltageofthehighestcellin4cellapplications.ConnecttoVC3in2cellstackIA,Cellvoltagesenseinputandcellbalancinginputforthepositivevoltageofthehighestcellincellstackin4cellapplications.ConnecttoVC2in2-or3-stackapplications.I,BatterystackvoltagesenseOHighsideN-channelchargeFETgate UMOver -airtemperature(unlessotherwisenoted) SupplyvoltageBAT,–0.3Vto34PACK,–0.3Vto34VC(n)–VC(n+1);n=1,2,3,–0.3Vto8.5VC1,VC2,VC3,–0.3Vto34–0.3Vto1 InputvoltagePFIN,SMBD,SMBC.LED1,LED2,LED3,LED4,LED5,DISP–0.3Vto6TS1,TS2,SAFE,VCELL+,PRES,–0.3VtoV(REG25)+0.3MRST,GSRN,GSRP,–0.3VtoV(REG25)+0.3ASRN,–1Vto1 OutputvoltageDSG,CHG,–0.3Vto34–0.3VtoVTOUT,ALERT,–0.3Vto6–0.3Vto7–0.3Vto2.75 umcombinedsinkcurrentforinputPRES,PFIN,SMBD,SMBC,LED1,LED2,LED3,LED4,LED550 Operating-airtemperature–40°Cto Functional–40°Cto Storagetemperature–65°Cto(1)Stressesbeyondthoselistedunderabsoluteumratingsmaycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunder mendedoperatingconditionsisnotimplied.Exposuretoabsolute-um-ratedconditionsforextendedperiodsmayaffectdevicereliability.MENDEDOPERATINGOver -airtemperaturerange(unlessotherwiseSupplyVCC,VMinimumstartupVCC,BAT,VMENDEDOPERATINGCONDITIONS(Overoperating-airtemperaturerange(unlessotherwiseInputvoltageVC(n)-VC(n+1);n=05VVC1,VC2,VC3,0V0VASRN,VPACK,0VOutputvoltage0VDrain12.5VLDO13.3VLDOCellvoltageoutputPACKinputblock1UseanexternalresistortolimitthecurrenttoGPODto1mAinhighvoltageUseanexternalresistortolimittheinrushcurrentPACKpinELECTRICALOveroperating -airtemperaturerange(unlessotherwisenoted),TA=–40°Cto85°C,V(REG25)=2.41Vto2.59V,V(BAT)=14V,C(REG25)=1μF,C(REG33)=2.2μF;typicalvaluesatTA=25°C(unlessotherwisenoted)TESTSUPPLY Firmware SleepCHGFETon;DSGFETCHGFEToff;DSGFETCHGFEToff;DSGFET Shutdown SHUTDOWNWAKE;TA=25°C(unlessotherwise ShutdownexitatVSTARTUP1SRxWAKEFROMSLEEP;TA=25°C(unlessotherwisePositiveornegative thresholdwith1.00mV,mV,4.5mVand9 ble V(WAKE)=1-I(WAKE)=0,RSNS1=0,RSNS0=V(WAKE)=2.25I(WAKE)=1,RSNS1=0,RSNS0=- AccuracyofI(WAKE)=0,RSNS1=1,RSNS0=V(WAKE)=4.5I(WAKE)=1,RSNS1=1,RSNS0=-I(WAKE)=0,RSNS1=1,RSNS0=V(WAKE)=9-I(WAKE)=1,RSNS1=1,RSNS0= TemperaturedriftofV(WAKE)Timefromapplication 1WATCHDOG Watchdogstartupdetect Watchdogdetect2.5VLDO;I(REG33OUT)=0mA;TA=25°C(unlessotherwise Regulatoroutput4.5<VCCorBAT<25V;I(REG25OUT)≤16mA;TA=–40°CtoVELECTRICALCHARACTERISTICS)OverELECTRICALCHARACTERISTICS)Over-airtemperaturerange(unlessotherwisenoted),TA=–40°Cto85°C,V(REG25)=2.41Vto2.59V(BAT)=14V,C(REG25)=1μF,C(REG33)=2.2μF;typicalvaluesatTA=25°C(unlessotherwiseTESTI(REG25OUT)=2mA;TA=–40°Cto100°C%Line5.4<VCCorBAT<25V;I(REG25OUT)=2mA3Load0.2mA≤I(REG25OUT)≤270.2mA≤I(REG25OUT)≤16CurrentdrawingcurrentuntilREG25=2Vto053.3VLDO;I(REG25OUT)=0mA;TA=25°C(unlessotherwiseRegulatoroutput4.5<VCCorBAT<25V;I(REG33OUT)≤25mA;TA=–40°Cto3VI(REG33OUT)=2mA;TA=–40°Cto100°C%Line5.4<VCCorBAT<25V;I(REG33OUT)=2mA3Load0.2mA≤I(REG33OUT)≤270.2mA≤I(REG33OUT)≤25CurrentdrawingcurrentuntilREG33=3shortREG33toVSS,REG33=0THERMISTOROutputI(TOUT)=0mA;TA=VTOUTpassI(TOUT)=1mA;RDS(on)=(V(REG25)-V(TOUT))/1mA;=–40°Cto?LEDOutputlowLED1,LED2,LED3,LED4,VVCELL+HIGHVOLTAGEVC(n)-VC(n+1)=0V;TA=–40°Cto100°C1VVC(n)-VC(n+1)=4.5V;TA=–40°Cto100°CinternalAFEreferencevoltage;TA=–40°Cto100°CTA=–40°Cto0.98×1.02×VoltageatBATpin;TA=–40°Cto100°C0.98×1.02×CommonmoderejectionKCellscaleK={VCELL+output(VC5=0V;VC4=4.5V)-VCELL+output(VC5=0V;VC4=0V)}/4.5K={VCELL+output(VC2=13.5V;VC1=18V)-(VC5=13.5V;VC1=13.5VC(n)-VC(n+1)=0V;VCELL+=0V;TA=–40°Cto100°CCELLoffsetCELLoutput(VC2=VC1=18V)-CELLoutput(VC2=VC1=0V)--LVC(n)pinleakageVC1,VC2,VC3,VC4,VC5=3-1CELLinternalcellbalancingRDS(on)forinternalFETswitchatVDS=2V;TA=25°C?HARDWARESHORTCIRCUITANDOVERLOADPROTECTION;TA=25°C(unlessotherwise voltageaccuracyVOL=25mVVOL=100mV;RSNS=0,VOL=205mVTESTvoltageaccuracyV(SCC)=50mVV(SCC)=200mV;RSNS=0,V(SCC)=475mVvoltageaccuracyV(SCD)=–50mVV(SCD)=–200mV;RSNS=0,V(SCD)=–475mVDelaytimeFETDRIVECIRCUIT;TA=25°C(unlessotherwise DSGpinoutputonV(DSGON)=V(DSG)-V(GS)connectedto10M?;DSGandCHGon;TA=–40°Cto100°C8VCHGpinoutputonV(CHGON)=V(CHG)-V(GS)=10M?;DSGandCHGon;TA=–40°Cto100°C8VDSGpinoutputoffV(DSGOFF)=V(DSG)-VCHGpinoutputoffV(CHGOFF)=V(CHG)-VRiseCL=4700V(CHG):V(PACK)≥V(PACK)+V(DSG):V(BAT)≥V(BAT)+FallCL=4700V(CHG):V(PACK)+V(CHGON)≥V(PACK)+V(DSG):VC1+V(DSGON)≥VC1+1ZVCHGclampBAT=4.5VLOGIC;TA=–40°Cto100°C(unlessotherwise Internalpullup136LogiclowoutputvoltageVRESET;V(BAT)=7V;V(REG25)=1.5V;I(RESET)=200GPOD;I(GPOD)=50LOGICSMBC,SMBD,PFIN,PRES,SAFE,ALERT, High-levelinputVLow-levelinputVOutputvoltageIL=–0.55VLow-leveloutputPRES,PFIN,ALERT,DISP;IL=7VInput5SAFEsourceSAFEactive,SAFE=V(REG25)–0.6SAFEleakageSAFEInputleakage1InputvoltageTS1,TS2,usingInternal1VConversionEffectiveIntegralOffsetOffseterrorTA=25°CtoRC[0:7]Unlessotherwisespecified,thespecificationlimitsarevalidatallmeasurementspeedFull-scalePost-calibrationperformanceandnoI/OchangesduringconversionwithSRNasthegroundTESTFull-scaleFull-scaleerrorEffective8COULOMBInputvoltageVConversionSingleEffectiveSingleIntegral–0.1Vto0.20–0.20Vto–0.1OffseterrorTA=25°CtoOffseterrorFull-scaleerror(8)Full-scaleerrorEffectiveTA=25°CtoINTERNALTEMPERATUREVOLTAGEOutputVOutputvoltageHIGHFREQUENCYOperatingFrequencyerror(12)TA=20°CtoStart-up LOWFREQUENCYOperatingFrequencyerror(13)TA=20°CtoStart-upUncalibratedperformance.ThisgainerrorcanbeeliminatedwithexternalTheA/Dinputisaswitched-capacitorinput.Sincetheinputisswitched,theeffectiveinputisameasureoftheaveragePost-calibrationReferencevoltageforthecoulombcounteristypicallyVref/3.969atV(REG25)=2.5V,TA=Uncalibratedperformance.ThisgainerrorcanbeeliminatedwithexternalTheCCinputisaswitchedcapacitorinput.Sincetheinputisswitched,theeffectiveinputisameasureoftheaverage–53.7Thefrequencyerrorismeasuredfrom4.194ThefrequencydriftisincludedandmeasuredfromthetrimmedfrequencyatV(REG25)=2.5V,TA=ThestartuptimeisdefinedasthetimeittakesfortheoscillatoroutputfrequencytobeThefrequencyerrorismeasuredfrom32.768POWER-ONOveroperating-airtemperaturerange(unlessotherwisenoted),TA=–40°Cto85°C,V(REG25)=2.41Vto2.59V,V(BAT)=14V,C(REG25)=1μF,C(REG33)=2.2μF;typicalvaluesatTA=25°C(unlessotherwisenoted)TEST Negative-goingvoltageV Power-onreset5 RESETactivelowActivelowtimeafterpoweruporwatchdog-AIRPower-OnResetPower-OnResetNegative-GoingVoltage-- - T -AirTemperature-DATAFLASHCHARACTERISTICSOVER MENDEDOPERATINGTEMPERATUREANDSUPPLYVOLTAGETypicalvaluesatTA=25°CandV(REG25)=2.5V(unlessotherwiseTESTDataSeeFlashprogrammingwrite- Rowprogramming2t(MASSERASE)Mass-eraset(PAGEERASE)erase Flash-writesupply5 Flash-erasesupply5RAM/REGISTER RBdata-retentioninputV(RBI)>V(RBI)MIN,VREG25<VIT–,TA=V(RBI)>V(RBI)MIN,VREG25<VIT–,TA= RBdata-retentioninputVSpecifiedbydesign.NotproductionSMBusTIMINGTA=–40°Cto85°CTypicalValuesatTA=25°CandVREG25=2.5V(UnlessOtherwiseTEST SMBusoperatingSlavemode,SMBC50%dutySMBusTIMINGCHARACTERISTICS(TA=–40°Cto85°CTypicalValuesatTA=25°CandVREG25=2.5V(UnlessOtherwiseTEST SMBusmasterclockMastermode,Noclocklowslave timebetweenstartandstop(seeFigure3) Holdtimeafter(repeated)start(seeFigure4 Repeatedstartsetuptime(seeFigure Stopsetuptime(seeFigure4 Dataholdtime(seeFigureReceive0Transmit Datasetuptime(seeFigure Errorsignal/detect(seeFigureSee Clocklowperiod(seeFigure Clockhighperiod(seeFigureSee4 CumulativeclocklowslaveextendSeet(LOW:MEXT)Cumulativeclocklowmasterextendtime(seeFigure3)See Clock/datafallSee Clock/datariseSeeThebq20z655-R1timesoutwhenanyclocklowexceedst(HIGH),Max,istheminimumbusidletime.SMBC=SMBD=1fort>50mscausesresetofanytransactioninvolvingbq20z655-R1thatisinprogress.ThisspecificationisvalidwhentheNC_SMBcontrolbitremainsinthedefaultclearedstate(CLK[0]=0). T)isthecumulativetimeaslavedeviceisallowedtoextendtheclockcyclesinonemessagefrominitialstarttothet(LOW:MEXT)isthecumulativetimeamasterdeviceisallowedtoextendtheclockcyclesinonemessagefrominitialstarttotheRisetimetr=VILMAX–0.15)to(VIHMIN+Falltimetf=0.9VDDto(VILMAX–PS

StartandStop WaitandHold

Timeout RepeatedStart SCLKACKistheacknowledge-relatedclockpulsegeneratedbytheFigure3.SMBusTimingFEATUREPrimary(1stLevel)SafetyThebq20z655-R1supportsawiderangeofbatteryandsystemprotectionfeaturesthatcaneasilybeconfigured.Theprimarysafetyfeaturesinclude:Cellover/undervoltageChargeanddischargeShortCircuitChargeanddischargeovertemperaturewithindependentalarmsandthresholdsforeachAFESecondary(2ndLevel)SafetyThesecondarysafetyfeaturesofthebq20z655-R1canbeusedtoindicatemoreseriousfaultsviatheSAFEpin.Thispincanbeusedtoblowanin-linefusetopermanentlydisablethebatterypackfromchargingordischarging.Thesecondarysafetyprotectionfeaturesinclude:SafetySafety2ndlevelprotectionICSafetyovercurrentinchargeandSafetyover-temperatureinchargeanddischargewithindependentalarmsandthresholdsforeachChargeFETandzero-voltchargeFETDischargeFETCellimbalancedetection(activeandatOpenthermistorFuseblowAFEcommunicationChargeControlThebq20z655-R1chargecontrolfeaturesSupportsJEITAtemperatureranges.Reportschargingvoltageandchargingcurrentaccordingtotheactivetemperaturerange.Handlesmorecomplexchargingprofiles.Allowsforsplittingthestandardtemperaturerangeintotwosub-rangesandallowsforvaryingthechargingcurrentaccordingtothecellvoltage.ReportstheappropriatechargingcurrentneededforconstantcurrentchargingandtheappropriatechargingvoltageneededforconstantvoltagechargingtoasmartchargerusingSMBusbroadcasts.DeterminesthechemicalstateofchargeofeachbatterycellusingImpedanceTrack?andcanreducethechargedifferenceofthebatterycellsinfullychargedstateofthebatterypackgraduallyusingcellbalancingalgorithmduringcharging.ThispreventsfullychargedcellsfromoverchargingandcausingexcessivedegradationandalsoincreasestheusablepackenergybypreventingprematurechargeterminationSupportspre-charging/zero-voltSupportschargeinhibitandchargesuspendifbatterypacktemperatureisoutoftemperatureReportschargingfaultandalsoindicatechargestatusviachargeanddischargeGasThebq20z655-R1usestheImpedanceTrack?Technologytomeasureandcalculatetheavailablechargeinbatterycells.Theachievableaccuracyisbetterthan1%erroroverthelifetimeofthebatteryandthereisnofullchargedischargelearningcyclerequired.SeetheTheoryandImplementationofImpedanceTrackBatteryFuel-GaugingAlgorithmapplicationnote(SLUA364)forfurtherdetails.LifetimeDataLoggingThebq20z655-R1offerslifetimedatalogging,whereimportantmeasurementsarestoredforwarrantyandysispurposes.Thedatamonitoredinclude:LifetimeumLifetimeumtemperatureLifetimeumtemperatureLifetimeminimumLifetimeumbatterycellLifetimeumbatterycellvoltageLifetimeumbatterycellvoltageLifetimeminimumbatterycell umbatterypackLifetimeminimumbatterypack umcharge umdischarge umcharge umdischarge umaveragedischarge umaveragedischargeLifetimeaverageThebq20z655-R1supportsauthenticationbythehostusingSHA-PowerThebq20z655-R1supportsthreedifferentpowermodestoreducepowerInNormalMode,thebq20z655-R1performsmeasurements,calculations,protectiondecisionsanddataupdatesin1secondintervals.Betweentheseintervals,thebq20z655-R1isinareducedpowerstage.InSleepMode,thebq20z655-R1performsmeasurements,calculations,protectiondecisionsanddataupdateinadjustabletimeintervals.Betweentheseintervals,thebq20z655-R1isinareducedpowerstage.Thebq20z655-R1hasawakefunctionthatenablesexitfromSleepmode,whencurrentfloworfailureisdetected.InShutdownMode,thebq20z655-R1iscompleyOscillatorThebq20z655-R1fullyintegratesthesystemoscillatorstherefore,noexternalcomponentsarerequiredforthisSystemPresentThebq20z655-R1periodicallyverifiesthePRESpinanddetectsthatthebatteryispresentinthesystemviaalowstateonaPRESinput.Whenthisoccurs,thebq20z655-R1entersnormaloperatingmode.WhenthepackisremovedfromthesystemandthePRESinputishigh,thebq20z655-R1entersthebattery-removedstate,disablingthecharge,discharge,andZVCHGFETs.ThePRESinputisignoredandcanbeleftfloatingwhennon-removalmodeissetinthedataflash.BATTERYPARAMETERThebq20z655-R1usesanintegratingdelta-sigmaog-to-digitalconverter(ADC)forcurrentmeasurement,andaseconddelta-sigmaADCforindividualcellandbatteryvoltage,andtemperaturemeasurement.ChargeandDischargeTheintegratingdelta-sigmaADCmeasuresthecharge/dischargeflowofthebatterybymeasuringthevoltagedropacrossasmall-valuesenseresistorbetweentheSR1andSR2pins.TheintegratingADCmeasuresbipolarsignalsfrom-0.25Vto0.25V.Thebq20z655-R1detectschargeactivitywhenVSR=V(SRP)-V(SRN)ispositiveanddischargeactivitywhenVSR=V(SRP)-V(SRN)isnegative.Thebq20z655-R1continuouslyintegratesthesignalovertime,usinganinternalcounter.Thefundamentalrateofthecounteris0.65nVh.Thebq20z655-R1updatestheindividualseriescellvoltagesatonesecondintervals.TheinternalADCofthebq20z655-R1measuresthevoltage,scalesandcalibratesitappropriay.ThisdataisalsousedtocalculatetheimpedanceofthecellfortheImpedanceTrack?gas-gauging.Thebq20z655-R1usestheSRPandSRNinputstomeasureandcalculatethebatterychargeanddischargecurrentusinga5–m?to20–m?typ.senseresistor.WakeThebq20z655-R1canexitsleepmode,ifenabled,bythepresenceofaprogrblelevelofcurrentsignalacrossSRPandSRN.AutoThebq20z655-R1providesanauto-calibrationfeaturetocancelthevoltageoffseterroracrossSRNandSRPforumchargemeasurementaccuracy.Thebq20z655-R1performsauto-calibrationwhentheSMBuslineslowcontinuouslyforaminimumofa bleamountofThebq20z655-R1hasaninternaltemperaturesensorand2externaltemperaturesensorinputs,TS1andTS2,usedinconjunctionwithtwoidenticalNTCthermistors(defaultareSemitec103AT)tosensethebatteryenvironmentaltemperature.Thebq20z655-R1canbeconfiguredtousetheinternaltemperaturesensororupto2externaltemperaturesensors.Thebq20z655-R1usesSMBusv1.1withMasterModeandpackageerrorchecking(PEC)optionspertheSBSSMBusOnandOffThebq20z655-R1detectsanSMBusoffstatewhenSMBCandSMBDarelogic-lowfor≥2seconds.ClearingthisstaterequireseitherSMBCorSMBDtotransitionhigh.Within1ms,thecommunicationbusisavailable.SBSTable2.SBS2——20700or300ormAhor10202——2—mAor10R20—R20—R20——R20—R20—R2—R2—R10—%R10—%R10—%20—mAhor10R20—mAhor10R20—R20—R20—R20—R20—R2——200—204400ormAhor102Table2.SBSCOMMANDS 2—200—2——————bq20z655-————R————————R20—R20—R20—R20—Table3.EXTENDEDSBSR————2——R2—%R2——R2——R2——R2——R2——R2——R20——R20—R20—R2-—R2-—4——4——4——4——4——4——4——R2——R2——R2——R2——Table3.EXTENDEDSBSCOMMANDS R————R————R————R————————20—R2————R————R————2——————————————————————————————————APPLICATIONPACKAGEOPTION10-Sep-PACKAGINGOrderableStatusPackagePackageEcon MSLPeakTempBallBQ20Z655DBT-&noSb/Br)CUNIPDAULevel-2-250C-1BQ20Z655DBTR-&noSb/Br)CUNIPDAULevel-2-260C-1(1)ThemarketingstatusvaluesaredefinedasACTIVE:Product mendedfornewLIFEBUY:TIhasannouncedthatthedevicewillbedis,andalifetime-buyperiodisinNRND: mendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoes mendusingthispartinanewPREVIEW:Devicehasbeenannouncedbutisnotinproduction.SamplesmayormaynotbeOBSOLETE:TIhasdistheproductionofthe(2)Econ-Thennedeco-friendlyclassification:Pb- (RoHS),Pb- (RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheck /productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.TBD:ThePb-/Green nhasnotbeenPb-(RoHS):TI'sterms"Lead- "or"Pb- "meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesolderedathightemperatures,TIPb- productsaresuitableforuseinspecifiedlead-processes.Pb-(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chip