模擬電子基礎(chǔ)第三章題庫及答案

1、NMOSand PMOS,exist.importantin electronicscarrierand holes.We can classifymodes.ThefabricatedInthe carrierInthe carrierForrationFor an P-channelrationEachand allowscircuittype NMOSand PMOS,exist.importantin electronicscarrierand holes.We can classifymodes.ThefabricatedInthe carrierInthe carrierForra

2、tionFor an P-channelrationEachand allowscircuittype of MOSFETscan be classifiedthemetal-semiconductorwithantype is electrons.atype is holes.anMOSFETwithis 4a high degree ofdesign.asMOSFETsintofield-effecta SchottkyNPn-channelK p=0.1mA/V2, and K penhancement andtransistorbarriertypetypeenhancement-mo

3、deMetal-Oxide-SemiconductorMetal-Oxide-SemiconductorMOSFET withChapter 31.填空題（1）Two complementary devices,device is equallyflexibility（2）Theelectrons(3)depletion(4)(MESFET), which isjunction.(5)Field-Effect-Transistor,(6)Field-Effect-Transistor,(7)Kn=0.2mA/V2, and Kn=0.1mA/V2, the width-to-lengthis

4、4(8)=0.05mA/V2, the width-to-lengthFor an n-channelparameter Kn=0.2mA/V2, and Kn=0.1mA/V2, theis 40MOSFETwith channel lengthis 16ForFor an n-channelparameter Kn=0.2mA/V2, and Kn=0.1mA/V2, theis 40MOSFETwith channel lengthis 16For an n-channelif channel length modulation parameter =0.01V-1,resistance

5、For a MOSFETbiasedlengthresistanceI DQ=0.1mAshown below, V TNL=VTND=0.8V, ifV o= 4.2VMOSFETwithl=2m,MOSFETbiasedr o= 100Kin the saturationmodulationr o= 500K ,Vchannel lengthinregion,parameterthenl=10m,the saturationif =0.02V-1,quiescentthedrainconductionwidth of the transistor(10) For an P-channelc

6、onduction parameter Kp=0.4mA/V2, and Kp=0.1mA/V2, thewidth of the transistor(11)region,I DQ=1mA,the output(12)channeloutputcurrent(13) For the circuitI=0.3V,the MOSFET,the currentappliedsurface and to the directionMOSFETs,the currentsappliedsemiconductor(N)principleithe MOSFET,the currentappliedsurf

7、ace and to the directionMOSFETs,the currentsappliedsemiconductor(N)principleis controlledperpendicularof current.are controlledin the same directionsurfacesof MOSFETis thatby an electricto both(Y)by electricasand tothethedirectionsof(1)JFETs were developed before MOSFET,but the applicationand uses o

8、f MOSFETshave farsurpassed those of JFET. (Y)(2)Infieldsemiconductor(3)Infieldsbothcurrent.(4)The basic transistorbetween two terminalsthroughof electronsconductionsingleload can keep Q-point( Y )MOSFETs(Y)used between two terminalsthroughof electronsconductionsingleload can keep Q-point( Y )MOSFETs

9、(Y)used than JFETs (Y)enhancement-mode MOSFETis biased in theregion,region,controlsthe thirdiseffecttransistor.(Y)and improve the gain ofititterminal.twiceis significantprobablyprobably(Y)as thatforof holesICthe current(5)The mobility( Y )(6)V TN(7)Subthresholdbut not for(8)Activean amplifier(9)JFET

10、s were developed before(10)M OSFETsare more widely3.選擇題(1)An n-channelsaturationmeans ( A )(A)V GSVTN, V DSVGS-V TN(B) V GSVTN, V DS(C) V GSVGS-V TN(D) V GS(2)An P-channel enhancement-mode MOSFETis biased in thesaturationmeans ( A )(A)V SG|V TP|, V SDVSG+VTP(B) V SGVSG+VTPvoltageV GS=3V,is most prob

11、ably operating( A )region (B) non-saturation(D) reversevoltageV SG=3V,SD=5V, thein which regionregion (B) non-saturation(D) reverseworking in anwhich combinatiovoltageV GS=3V,is most probably operating( A )region (B) non-saturation(D) reversevoltageV SG=3V,SD=5V, thein which regionregion (B) non-sat

12、uration(D) reverseworking in anwhich combination of voltages( A )anworkingconditionregion (C) cut offregionconditiontransistor( A )region (C) cut offregionmaybecorrectn-channelin saturationofofisforenhancement-mode MOSFETwithoneonemostVn-channelP-channelprobably(3)Theenhancement-mode MOSFETisV TN=1V

13、,VDS=5V,the transistorin which region(A)saturationregion(4)Theenhancement-mode MOSFETisV TP=-1V,Voperating(A)saturationregion(5)An n-channel enhancement-mode MOSFETwith V TN=0.8V isproperlyamplifier,the transistor(A)V GS=2V, V DS4V(B) V GS-1V, V DS=4V(C) V GS=5V, VDS=1V(D) V GS=-3V, V DS=-5V(6)ForTN

14、=0.8V， GS=1.8V，and conductionparameter Kn=0.1mA/V2 is properlythe draina P-channel enhancement-mode MOSFETwith V TP=-1V，working the draina P-channel enhancement-mode MOSFETwith V TP=-1V，working in saturationthe drainstands formode NMOSmode PMOSof i D Versus v DS curves,is ( A )NMOSFETPMOSFETof the d

15、evice as shown is ( A )currentcurrent( A )we canI D is ( A )I D is ( A )(A) 0.1mA (B) 0.2mA (C) 0.3mA (D) 0.4mA(7)ForV SG=2V，and conductionparameter K p=0.1mA/V2 is properlyregion,(A) 0.1mA (B) 0.2mA (C) 0.3mA (D) 0.4mA(8)The symbol of the transistor(A) An Enhancement modeNMOS(B) An Enhancement modePMOS(C) An depletion(D) An depletion(9)From the familyknow the type of the transistor(A)Depletion-Mode(B) Depletion-Mode(C) Enhancement-Mode NMOSFET(D) Enhancement-Mode PMOSFET(10) The structureuse multistageof amplifiers,improvefactorinputamplifierNOTincludingamplific