GB/T 44538-2024碳基薄膜橢偏光譜法測(cè)定非晶態(tài)碳基薄膜的光學(xué)性能

ICS

25.220.99

CCS

A29

中華人民共和國(guó)國(guó)家標(biāo)準(zhǔn)

GB/T44538—2024

碳基薄膜橢偏光譜法測(cè)定

非晶態(tài)碳基薄膜的光學(xué)性能

Carbonbasedfilms—Determinationofopticalpropertiesofamorphouscarbon

filmsbyspectfoscopicellipsometry

（ISO23216：2021,MOD）

2024-09-29發(fā)布2025-05-01實(shí)施

國(guó)家市場(chǎng)監(jiān)督管理總局發(fā)布

國(guó)家標(biāo)準(zhǔn)化管理委員會(huì)

GB/T44538—2024

目次

前言

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Ⅲ

1

范圍

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1

2

規(guī)范性引用文件

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1

3

術(shù)語(yǔ)和定義

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1

4

試樣制備

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1

5

設(shè)備

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1

5.1

鹵素?zé)艉退{(lán)光LED燈

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1

5.2

探測(cè)器

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1

5.3

與光電倍增管（PMT）/電荷耦合器件（CCD）/光電二極管陣列（PDA）連接的光譜儀

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2

5.4

軟件

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2

5.5

置物臺(tái)

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2

5.6

測(cè)角儀

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2

5.7

攝像機(jī)

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2

6

試驗(yàn)步驟

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2

6.1

樣品預(yù)處理

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2

6.2

試驗(yàn)準(zhǔn)備

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2

6.3

試驗(yàn)條件

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2

6.4

光學(xué)模型

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2

6.5

測(cè)試過(guò)程

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3

6.6

平行試驗(yàn)

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3

7

試驗(yàn)結(jié)果分類(lèi)

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3

8

試驗(yàn)報(bào)告

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3

附錄A（規(guī)范性）

非晶碳基薄膜的光學(xué)性質(zhì)分類(lèi)方法

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4

Ⅰ

GB/T44538—2024

前言

本文件按照GB/T1.1—2020《標(biāo)準(zhǔn)化工作導(dǎo)則第1部分：標(biāo)準(zhǔn)化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)

定起草。

本文件修改采用ISO23216：2021《碳基薄膜橢偏光譜法測(cè)定非晶態(tài)碳基薄膜的光學(xué)性能》。

本文件與ISO23216：2021相比做了下述結(jié)構(gòu)調(diào)整：

—6.4和6.5對(duì)應(yīng)ISO23216：2021中的6.4；

—6.6對(duì)應(yīng)ISO23216：2021中的6.5。

本文件做了下列編輯性改動(dòng)：

—增加了圖1光學(xué)模型各層所對(duì)應(yīng)類(lèi)型的標(biāo)注；

—增加了標(biāo)題條（見(jiàn)5.1～5.7）。

請(qǐng)注意本文件的某些內(nèi)容可能涉及專(zhuān)利。本文件的發(fā)布機(jī)構(gòu)不承擔(dān)識(shí)別專(zhuān)利的責(zé)任。

本文件由中國(guó)機(jī)械工業(yè)聯(lián)合會(huì)提出。

本文件由全國(guó)金屬與非金屬覆蓋層標(biāo)準(zhǔn)化技術(shù)委員會(huì)（SAC/TC57）歸口。

本文件起草單位：中國(guó)機(jī)械總院集團(tuán)武漢材料保護(hù)研究所有限公司、納獅新材料有限公司、安徽純

源鍍膜科技有限公司、中國(guó)科學(xué)院深圳先進(jìn)技術(shù)研究院、廣東電網(wǎng)有限責(zé)任公司、廣州今泰科技股份有

限公司。

本文件主要起草人：段海濤、賈丹、曹一瑩、張心鳳、沈?qū)W忠、高明、詹勝鵬、凃杰松、王彥峰、

王流火、楊田、陳輝、駱小雙、尤錦鴻、易娟、蘇東藝。

Ⅲ

GB/T44538—2024

碳基薄膜橢偏光譜法測(cè)定

非晶態(tài)碳基薄膜的光學(xué)性能

1范圍

本文件描述了使用橢偏光譜法測(cè)定非晶碳基薄膜光學(xué)特性（折射率n和消光系數(shù)k）以及通過(guò)n?k圖

譜進(jìn)行不同類(lèi)型非晶碳基薄膜分類(lèi)的方法。

本文件適用于通過(guò)離子蒸鍍、濺射、電弧沉積、等離子體輔助化學(xué)氣相沉積、熱絲等工藝沉積的非

晶碳基薄膜。

本文件不適用于通過(guò)金屬或硅改性的非晶碳基薄膜，或在薄膜厚度上存在成分/性質(zhì)梯度的非晶碳

基薄膜。

2規(guī)范性引用文件

本文件沒(méi)有規(guī)范性引用文件。

3術(shù)語(yǔ)和定義

下列術(shù)語(yǔ)和定義適用于本文件。

3.1

折射率refractiveindex

n

電磁輻射在真空中的傳播速度與在介質(zhì)中的傳播速度之比。

3.2

消光系數(shù)extinctioncoefficient

k

介質(zhì)（物質(zhì)）對(duì)電磁輻射的吸收量。

4試樣制備

各基底上的非晶碳基薄膜均可用于試驗(yàn)，只要基底是光學(xué)各向同性的，并具有可用光學(xué)模型。推薦

的試驗(yàn)基底是鏡面的硅晶片。鏡面的硅晶片能作為非晶基碳膜的基底以滿(mǎn)足不同的測(cè)試要求。樣品應(yīng)為

均勻的非晶碳基薄膜，薄膜厚度應(yīng)為0.02μm~5μm。

應(yīng)提供樣品的所有相關(guān)細(xì)節(jié)，如尺寸