2024年-MOS工藝講解課件

MOS晶體管的動作

MOS晶體管實(shí)質(zhì)上是一種使電流時(shí)而流過，時(shí)而切斷的開關(guān)n+n+P型硅基板柵極（金屬）絕緣層（SiO2）半導(dǎo)體基板漏極源極N溝MOS晶體管的基本結(jié)構(gòu)源極(S)漏極(D)柵極(G)MOSFET的基本結(jié)構(gòu)1

siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxideMOS晶體管的立體結(jié)構(gòu)2

在硅襯底上制作MOS晶體管siliconsubstrate3

siliconsubstrateoxidefieldoxide4

siliconsubstrateoxidephotoresist5

ShadowonphotoresistphotoresistExposedareaofphotoresistChromeplatedglassmaskUltravioletLightsiliconsubstrateoxide6

非感光區(qū)域siliconsubstrate感光區(qū)域oxidephotoresist7

Shadowonphotoresistsiliconsubstrateoxidephotoresistphotoresist顯影8

siliconsubstrateoxideoxidesiliconsubstratephotoresist腐蝕9

siliconsubstrateoxideoxidesiliconsubstratefieldoxide去膠10

siliconsubstrateoxideoxidegateoxidethinoxidelayer11

siliconsubstrateoxideoxidepolysilicongateoxide12

siliconsubstrateoxideoxidegategateultra-thingateoxidepolysilicongate13

siliconsubstrateoxideoxidegategatephotoresistScanningdirectionofionbeamimplantedionsinactiveregionoftransistorsImplantedionsinphotoresisttoberemovedduringresiststrip.sourcedrainionbeam14

siliconsubstrateoxideoxidegategatesourcedraindopedsilicon15

自對準(zhǔn)工藝在有源區(qū)上覆蓋一層薄氧化層淀積多晶硅，用多晶硅柵極版圖刻蝕多晶硅以多晶硅柵極圖形為掩膜板，刻蝕氧化膜離子注入16

siliconsubstratesourcedraingate17

siliconsubstrategatecontactholesdrainsource18

siliconsubstrategatecontactholesdrainsource19

完整的簡單MOS晶體管結(jié)構(gòu)siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxide20

CMOSFETP型sisubn+gateoxiden+gateoxideoxidep+p+21

主要的CMOS工藝VDDP阱工藝N阱工藝雙阱工藝P-P+P+N+N+P+N+VSSVOUTVINVDDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si22

掩膜1：P阱光刻P-wellP-well

N+

N+

P+

P+

N+

P+N-SiP23

具體步驟如下：1．生長二氧化硅（濕法氧化）：Si(固體)+2H2OSiO2（固體）+2H224

氧化25

2．P阱光刻：涂膠腌膜對準(zhǔn)曝光光源顯影26

27

硼摻雜（離子注入）刻蝕（等離子體刻蝕）去膠P+去除氧化膜P-well3．P阱摻雜：28

29

離子源高壓電源電流積分器離子束30

掩膜2：光刻有源區(qū)有源區(qū)：nMOS、PMOS

晶體管形成的區(qū)域P+N+N+P+N-SiP-wellP-wellP-well淀積氮化硅光刻有源區(qū)場區(qū)氧化去除有源區(qū)氮化硅及二氧化硅SiO2隔離島31

有源區(qū)depositednitridelayer有源區(qū)光刻板N型p型MOS制作區(qū)域(漏-柵-源)32

P-well1.淀積氮化硅：氧化膜生長（濕法氧化）P-well氮化膜生長P-well涂膠P-well對版曝光有源區(qū)光刻板2.光刻有源區(qū)：33

P-well顯影P-well氮化硅刻蝕去膠3.場區(qū)氧化：P-well場區(qū)氧化（濕法氧化）P-well去除氮化硅薄膜及有源區(qū)SiO234

掩膜3：光刻多晶硅P-well去除氮化硅薄膜及有源區(qū)SiO2P-wellP+N+N+P+N-SiP-well柵極氧化膜多晶硅柵極生長柵極氧化膜淀積多晶硅光刻多晶硅35

P-well生長柵極氧化膜P-well淀積多晶硅P-well涂膠光刻多晶硅光刻板P-well多晶硅刻蝕36

掩膜4

：P+區(qū)光刻

1、P+區(qū)光刻

2、離子注入B+，柵區(qū)有多晶硅做掩蔽，稱為硅柵自對準(zhǔn)工藝。

3、去膠P-wellP+N+N+P+N-SiP-wellP-wellP+P+37

P-wellP+P-wellP+P+硼離子注入去膠38

掩膜5

：N+區(qū)光刻

1、N+區(qū)光刻

2、離子注入P+，柵區(qū)有多晶硅做掩蔽，稱為硅柵自對準(zhǔn)工藝。

3、去膠P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+39

P-wellN+P-wellP+P+磷離子注入去膠P+P+N+N+40

掩膜6

：光刻接觸孔1、淀積PSG.2、光刻接觸孔3、刻蝕接觸孔P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+磷硅玻璃（PSG)41

掩膜6

：光刻接觸孔P-wellP+P+N+N+淀積PSGP-wellP+P+N+N+光刻接觸孔P-wellP+P+N+N+刻蝕接觸孔P-wellP+P+