半導(dǎo)體制造的常用名詞

半導(dǎo)體制造的常用名詞發(fā)表于:2007-5-0717:10:luhaoxinglhx來(lái)源:半導(dǎo)體技術(shù)天地Ingot-Acylindricalsolidmadeofpolycrystallineorsinglecrystalsiliconfromwhichwafersarecut.晶錠-由多晶或單晶形成的圓柱體，晶圓片由此切割而成。LaserLight-ScatteringEvent-Asignalpulsethatlocatessurfaceimperfectionsonawafer.激光散射-由晶圓片表面缺陷引起的脈沖信號(hào)。Lay-Themaindirectionofsurfacetextureonawafer.層-晶圓片表面結(jié)構(gòu)的主要方向。LightPointDefect(LPD)(Notpreferred;seelocalizedlight-scatterer)光點(diǎn)缺陷(LPD)（不推薦使用，參見(jiàn)“局部光散射）Lithography-Theprocessusedtotransferpatternsontowafers.光刻-從掩膜到圓片轉(zhuǎn)移的過(guò)程。LocalizedLight-Scatterer-Onefeatureonthesurfaceofawafer,suchasapitorascratchthatscatterslight.Itisalsocalledalightpointdefect.局部光散射-晶圓片表面特征，例如小坑或擦傷導(dǎo)致光線散射，也稱為光點(diǎn)缺陷。Lot-Wafersofsimilarsizesandcharacteristicsplacedtogetherinashipment.批次-具有相似尺寸和特性的晶圓片一并放置在一個(gè)載片器內(nèi)。MajorityCarrier-Acarrier,eitheraholeoranelectronthatisdominantinaspecificregion,suchaselectronsinanN-Typearea.多數(shù)載流子-一種載流子，在半導(dǎo)體材料中起支配作用的空穴或電子，例如在N型中是電子。MechanicalTestWafer-Asiliconwaferusedfortestingpurposes.機(jī)械測(cè)試晶圓片-用于測(cè)試的晶圓片。Microroughness-Surfaceroughnesswithspacingbetweentheimpuritieswithameasurementoflessthan100μm.微粗糙-小于100微米的表面粗糙部分。MillerIndices,ofaCrystallographicPlane-Asystemthatutilizesthreenumberstoidentifyplanorientationinacrystal.Miller索指數(shù)-三個(gè)整數(shù)，用于確定某個(gè)并行面。這些整數(shù)是來(lái)自相同系統(tǒng)的基本向量。MinimalConditionsorDimensions-Theallowableconditionsfordeterminingwhetherornotawaferisconsideredacceptable.最小條件或方向-確定晶圓片是否合格的允許條件。MinorityCarrier-Acarrier,eitheraholeoranelectronthatisnotdominantinaspecificregion,suchaselectronsinaP-Typearea.少數(shù)載流子-在半導(dǎo)體材料中不起支配作用的移動(dòng)電荷，在P型中是電子，在N型中是空穴。Mound-Araiseddefectonthesurfaceofawafermeasuringmorethan0.25mm.堆垛-晶圓片表面超過(guò)0.25毫米的缺陷。Notch-Anindentontheedgeofawaferusedfororientationpurposes.凹槽-晶圓片邊緣上用于晶向定位的小凹槽。OrangePeel-Aroughenedsurfacethatisvisibletotheunaidedeye.桔皮-可以用肉眼看到的粗糙表面OrthogonalMisorientation-直角定向誤差-Particle-Asmallpieceofmaterialfoundonawaferthatisnotconnectedwithit.1顆粒-晶圓片上的細(xì)小物質(zhì)。ParticleCounting-Wafersthatareusedtotesttoolsforparticlecontamination.顆粒計(jì)算-用來(lái)測(cè)試晶圓片顆粒污染的測(cè)試工具。ParticulateContamination-Particlesfoundonthesurfaceofawafer.Theyappearasbrightpointswhenacollineatedlightisshinedonthewafer.顆粒污染-晶圓片表面的顆粒。Pit-Anon-removableimperfectionfoundonthesurfaceofawafer.深坑-一種晶圓片表面無(wú)法消除的缺陷。PointDefect-Acrystaldefectthatisanimpurity,suchasalatticevacancyoraninterstitialatom.點(diǎn)缺陷-不純凈的晶缺陷，例如格子空缺或原子空隙。PreferentialEtch-優(yōu)先蝕刻-PremiumWafer-Awaferthatcanbeusedforparticlecounting,measuringpatternresolutioninthephotolithographyprocess,andmetalcontaminationmonitoring.Thiswaferhasverystrictspecificationsforaspecificusage,butlooserspecificationsthantheprimewafer.測(cè)試晶圓片-影印過(guò)程中用于顆粒計(jì)算、測(cè)量溶解度和檢測(cè)金屬污染的晶圓片。對(duì)于具體應(yīng)用該晶圓片有嚴(yán)格的要求，但是要比主晶圓片要求寬松些。PrimaryOrientationFlat-Thelongestflatfoundonthewafer.主定位邊-晶圓片上最長(zhǎng)的定位邊。ProcessTestWafer-Awaferthatcanbeusedforprocessesaswellasareacleanliness.加工測(cè)試晶圓片-用于區(qū)域清潔過(guò)程中的晶圓片。Profilometer-Atoolthatisusedformeasuringsurfacetopography.表面形貌劑-一種用來(lái)測(cè)量晶圓片表面形貌的工具。Resistivity(Electrical)-Theamountofdifficultythatchargedcarriershaveinmovingthroughoutmaterial.電阻率（電學(xué)方面）-材料反抗或?qū)闺姾稍谄渲型ㄟ^(guò)的一種物理特性。Required-Theminimumspecificationsneededbythecustomerwhenorderingwafers.必需-訂購(gòu)晶圓片時(shí)客戶必須達(dá)到的最小規(guī)格。Roughness-Thetexturefoundonthesurfaceofthewaferthatisspacedverycloselytogether.粗糙度-晶圓片表面間隙很小的紋理。SawMarks-Surfaceirregularities鋸痕-表面不規(guī)則。ScanDirection-Intheflatnesscalculation,thedirectionofthesubsites.掃描方向-平整度測(cè)量中，局部平面的方向。ScannerSiteFlatness-局部平整度掃描儀-Scratch-Amarkthatisfoundonthewafersurface.擦傷-晶圓片表面的痕跡。SecondaryFlat-Aflatthatissmallerthantheprimaryorientationflat.Thepositionofthisflatdetermineswhattypethewaferis,andalsotheorientationofthewafer.第二定位邊-比主定位邊小的定位邊，它的位置決定了晶圓片的類型和晶向。Shape-形狀-Site-Anareaonthefrontsurfaceofthewaferthathassidesparallelandperpendiculartotheprimaryorientationflat.(Thisareaisrectangularinshape)2局部表面-晶圓片前面上平行或垂直于主定位邊方向的區(qū)域。SiteArray-aneighboringsetofsites局部表面系列-一系列的相關(guān)局部表面。SiteFlatness-局部平整-Slip-Adefectpatternofsmallridgesfoundonthesurfaceofthewafer.劃傷-晶圓片表面上的小皺造成的缺陷。Smudge-Adefectorcontaminationfoundonthewafercausedbyfingerprints.污跡-晶圓片上指紋造成的缺陷或污染。Sori-Striation-Defectsorcontaminationsfoundintheshapeofahelix.條痕-螺紋上的缺陷或污染。Subsite,ofaSite-Anareafoundwithinthesite,alsorectangular.Thecenterofthesubsitemustbelocatedwithintheoriginalsite.局部子表面-局部表面內(nèi)的區(qū)域，也是矩形的。子站中心必須位于原始站點(diǎn)內(nèi)部。SurfaceTexture-Variationsfoundontherealsurfaceofthewaferthatdeviatefromthereferencesurface.表面紋理-晶圓片實(shí)際面與參考面的差異情況。TestWafer-Asiliconwaferthatisusedinmanufacturingformonitoringandtestingpurposes.測(cè)試晶圓片-用于生產(chǎn)中監(jiān)測(cè)和測(cè)試的晶圓片。ThicknessofTopSiliconFilm-Thedistancefoundbetweenthefaceofthetopsiliconfilmandthesurfaceoftheoxidelayer.頂部硅膜厚度-頂部硅層表面和氧化層表面間的距離。TopSiliconFilm-Thelayerofsilicononwhichsemiconductordevicesareplaced.Thisislocatedontopoftheinsulatinglayer.頂部硅膜-生產(chǎn)半導(dǎo)體電路的硅層，位于絕緣層頂部。TotalIndicatorReading(TIR)-Thesmallestdistancebetweenplanesonthesurfaceofthewafer.總計(jì)指示劑數(shù)(TIR)-晶圓片表面位面間的最短距離。VirginTestWafer-Awaferthathasnotbeenusedinmanufacturingorotherprocesses.原始測(cè)試晶圓片-還沒(méi)有用于生產(chǎn)或其他流程中的晶圓片。Void-Thelackofanysortofbond(particularlyachemicalbond)atthesiteofbonding.無(wú)效-在應(yīng)該綁定的地方?jīng)]有綁定（特別是化學(xué)綁定）。Waves-Curvesandcontoursfoundonthesurfaceofthewaferthatcanbeseenbythenakedeye.波浪-晶圓片表面通過(guò)肉眼能發(fā)現(xiàn)的彎曲和曲線。Waviness-Widelyspacedimperfectionsonthesurfaceofawafer.波紋-晶圓片表面經(jīng)常出現(xiàn)的缺陷。3）銻氬砷：4PNsemiconductor和N在P。。5體6于:n::結(jié)7nnn:nnn:nn1n:nnn:nnnn)：n型:：n：nnnnn8：結(jié)nnn近XX膜n:nnnnn。n:。nnnn。n:nnnnn:92到2中。10:碳11]X12X13在1415度---將-16---S：1718批NN阱19