半導(dǎo)體封裝制程及其設(shè)備介紹

半導(dǎo)體封裝制程與設(shè)備材料知識(shí)簡(jiǎn)介

PrepareBy：WilliamGuo

2007.11Update目前一頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)半導(dǎo)體封裝制程概述半導(dǎo)體前段晶圓wafer制程半導(dǎo)體后段封裝測(cè)試

封裝前段（B/G-MOLD）－封裝后段（MARK-PLANT）－測(cè)試封裝就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨(dú)立分離，並外接信號(hào)線至導(dǎo)線架上分離而予以包覆包裝測(cè)試直至IC成品。目前二頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)半導(dǎo)

體

制程O(píng)xidization(氧化處理)Lithography(微影)Etching(蝕刻)DiffusionIonImplantation(擴(kuò)散離子植入)Deposition(沉積)WaferInspection(晶圓檢查)Grind&Dicing(晶圓研磨及切割)DieAttach(上片)WireBonding(焊線)Molding(塑封)Package(包裝)WaferCutting(晶圓切斷)WaferReduce

(晶圓減薄)LaserCut&packagesaw(切割成型)Testing(測(cè)試)Lasermark(激光印字)IC制造開(kāi)始前段結(jié)束后段封裝開(kāi)始製造完成目前三頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)封裝型式(PACKAGE)ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)8~64DIPDualIn-linePackagePlastic2.54mm(100miles)1directionlead3~25SIPSingleIn-linePackage目前四頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic2.54mm(100miles)1directionlead16~24ZIPZigzagIn-linePackagePlastic1.778mm(70miles)20~64S-DIPShrinkDualIn-linePackage目前五頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)half-sizepitchinthewidthdirection24~32SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54mm(100miles)PBGAPinGridArray目前六頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic1.27mm(50miles)2directionlead8~40SOPSmallOutlinePackagePlastic1.0,0.8,0.65mm4directionlead88~200QFPQuad-FlatPack目前七頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27,0.762mm(50,30miles)2,4directionlead20~80FPGFlatPackageofGlassCeramic1.27,1.016,0.762mm(50,40,30miles)20~40LCCLeadlessChipCarrier目前八頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27mm(50miles)j-shapebend4directionlead18~124PLCCPlasticLeadedChipCarrierCeramic0.5mm32~200VSQFVerySmallQuadFlatpack目前九頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)AssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBond

SMT(Optional)目前十頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分目前十一頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分目前十二頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)常用術(shù)語(yǔ)介紹SOP-StandardOperationProcedure標(biāo)準(zhǔn)操作手冊(cè)WI–WorkingInstruction作業(yè)指導(dǎo)書(shū)PM–PreventiveMaintenance預(yù)防性維護(hù)FMEA-FailureModeEffectAnalysis失效模式影響分析SPC-StatisticalProcessControl統(tǒng)計(jì)制程控制DOE-DesignOfExperiment工程試驗(yàn)設(shè)計(jì)IQC/OQC-Incoming/OutingQualityControl來(lái)料/出貨質(zhì)量檢驗(yàn)MTBA/MTBF-MeanTimebetweenassist/Failure平均無(wú)故障工作時(shí)間CPK-品質(zhì)參數(shù)UPH-UnitsPerHour每小時(shí)產(chǎn)出

QC7Tools(QualityControl品管七工具)OCAP(OutofControlActionPlan異常改善計(jì)劃

)8D(問(wèn)題解決八大步驟

)ECNEngineeringChangeNotice(制程變更通知

)ISO9001，14001–質(zhì)量管理體系目前十三頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)前道ＦＯＬ后道EOLWireBond引線鍵合Mold模塑LaserMark激光印字LaserCutting激光切割EVI產(chǎn)品目檢SanDiskAssemblyProcessFlow

SanDisk封裝工藝流程DiePrepare芯片預(yù)處理ＤieAttach芯片粘貼WaferIQC來(lái)料檢驗(yàn)PlasmaClean清洗PlasmaClean清洗SawSingulation切割成型SMT表面貼裝PMC模塑后烘烤目前十四頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)SMT（表面貼裝）---包括錫膏印刷(Solderpasteprinting),置件(Chipshooting),回流焊(Reflow),DI水清洗(DIwatercleaning),自動(dòng)光學(xué)檢查(Automaticopticalinspection),使貼片零件牢固焊接在substrate上StencilSubstrateSolderpastepringtingChipshootingReflowOvenDIwatercleaningAutomaticopticalinpectionCapacitorDIwaterCameraHotwindNozzlePADPADSolderpaste目前十五頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)DiePrepare(芯片預(yù)處理)ToGrindthewafertotargetthicknessthenseparatetosinglechip---包括來(lái)片目檢(WaferIncoming),貼膜(WaferTape),磨片(BackGrind),剝膜(Detape),貼片(WaferMount),切割(WaferSaw)等系列工序,使芯片達(dá)到工藝所要求的形狀,厚度和尺寸,并經(jīng)過(guò)芯片目檢(DVI)檢測(cè)出所有由于芯片生產(chǎn),分類(lèi)或處理不當(dāng)造成的廢品.WafertapeBackGrindWaferDetapeWaferSaw目前十六頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)InlineGrinding&Polish--AccretechPG300RMTransfer

CoarseGrind

90%FineGrind10%CentrifugalClean

Alignment&Centering

Transfer

BackSideUpward

De-taping

Mount

KeyTechnology:1.LowThicknessVariation:+/_1.5Micron2.GoodRoughness:+/-0.2Micron3.ThinWaferCapacity:Upto50Micron4.All-In-Onesolution,ZeroHandleRisk目前十七頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)2.Grinding相關(guān)材料ATAPE麥拉BGrinding砂輪CWAFERCASSETTLE目前十八頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)工藝對(duì)TAPE麥拉的要求：1。MOUNTNodelamination

STRONG2。SAW

ADHESIONNodieflyingoffNodiecrack目前十九頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)工藝對(duì)麥拉的要求：3。EXPANDING

TAPEDiedistance ELONGATION

Uniformity

4。PICKINGUP

WEAK

ADHESIONNocontamination目前二十頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)3.Grinding輔助設(shè)備AWaferThicknessMeasurement厚度測(cè)量?jī)x一般有接觸式和非接觸式光學(xué)測(cè)量?jī)x兩種；BWaferroughnessMeasurement粗糙度測(cè)量?jī)x主要為光學(xué)反射式粗糙度測(cè)量方式；目前二十一頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)4.Grinding配套設(shè)備ATaping貼膜機(jī)BDetaping揭膜機(jī)CWaferMounter貼膜機(jī)目前二十二頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)WaferTaping--NittoDR300IICutTapeTaping

AlignmentTransfer

TransferBack

KeyTechnology:1.HighTransferAccuracy:+/_2Micron2.HighCutAccuracy:+/-0.2mm3.HighThroughput:50pcswafer/Hour4.ZeroVoidandZeroWaferBroken目前二十三頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)Detaping目前二十四頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)l

Wafermount

Waferframe目前二十五頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)晶圓切割(Dicing)Dicing設(shè)備:ADISCO6361系列BACCERTECH東京精密AW-300T目前二十六頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)MainSectionsIntroductionCuttingArea:Spindles(Blade,Flange,CarbonBrush),CuttingTable,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoaderUnits:Spinner,Elevator,Cassette,

RotationArm目前二十七頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)BladeClose-ViewBladeCuttingWaterNozzleCoolingWaterNozzle目前二十八頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)DieSawing–Disco6361KeyTechnology:1.Twin-SpindleStructure.2.X-axisspeed:upto600mm/s.3.SpindleRotarySpeed:Upto45000RPM.4.CuttingSpeed:Upto80mm/s.5.Z-axisrepeatability:1um.6.PositioningAccuracy:3um.

RearFront目前二十九頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)AFewConceptsBBD(BladeBrokenDetector)Cutter-set:ContactandOpticalPrecisionInspectionUp-CutandDown-CutCut-inandCut-remain目前三十頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)晶圓切割(Dicing)Dicing相關(guān)工藝ADieChipping芯片崩角BDieCorrosive芯片腐蝕CDieFlying芯片飛片目前三十一頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)Wmax,Wmin,Lmax,DDY,DY規(guī)格— DY<0.008mm Wmax<0.070mm Wmin<0.8*刀厚 Lmax<0.035目前三十二頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)

切割時(shí)之轉(zhuǎn)速予切速:a.

轉(zhuǎn)速:指的是切割刀自身的轉(zhuǎn)速b.

切速:指的是Wafer移動(dòng)速度.主軸轉(zhuǎn)速:S1230:30000~45000RPMS1440:30000~45000RPM27HEED:35000~45000RPM27HCCD:35000~45000RPM27HDDC:35000~45000RPM目前三十三頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)晶圓切割(Dicing)3.Dicing相關(guān)材料ATapeBSawBLADE切割刀CDI去離子水、RO純水目前三十四頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)切割刀的規(guī)格規(guī)格就包括刀刃長(zhǎng)度、刀刃寬度、鑽石顆粒大小、濃度及Nickelbondhardness軟硬度的選擇P4目前三十五頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)Sawblade對(duì)製程的影響ProperCutDepthIntoTape(切入膠膜的理想深度)分析:理想的切割深度可防止1.背崩之發(fā)生。2.切割街區(qū)的DDY理想的切割深度須切入膠膜(Tape)1/3厚度。P11目前三十六頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)

切割刀的影響DiamondGritSize(鑽石顆粒大小)

GRITSIZE

+-TopSideChipping+-BladeLoading+-BladeLife+-FeedRate+-分析:小顆粒之鑽石1.切割品質(zhì)較好。2.切割速度不宜太快。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負(fù)載電流較小。P15目前三十七頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)TAPE粘度對(duì)SAW製程的影響MountingTape(膠膜黏力)

TAPEADHESION

+-CutQuality+-FlyingDie+-分析:使用較黏膠膜可獲得1.沒(méi)有飛Die。2.較好的切割品質(zhì)。潛在風(fēng)險(xiǎn)

DieAttachprocesspickupdie

影響。Cost+-DieEjection+-P10目前三十八頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)晶圓切割(Dicing)4.Dicing輔助設(shè)備ACO2Bubbler二氧化碳發(fā)泡機(jī)BDIWater電阻率監(jiān)測(cè)儀CDiamonflow發(fā)生器DUV照射機(jī)目前三十九頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)DieAttach(芯片粘貼)ToattachsingledietoSMTedsubstrate---把芯片粘貼到已經(jīng)過(guò)表面貼裝(SMT)和預(yù)烘烤(Pre-bake)后的基片上,或芯片粘貼到芯片上,并經(jīng)過(guò)芯片粘貼后烘烤(DieAttachCure)固化粘結(jié)劑.Passivechip(capacitor)Substrate目前四十頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)上片

(DieBond)DieBond

設(shè)備AHITACHIDB700BESEC2007/2008系列CASM829/889/898系列目前四十一頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)DieAttach–HitachiDB700KeyTechnology:1.Bondingspeed:30ms/die;2.BondingAccuracyX/Y:25um;3.AngleAccuracy:0.5degree;4.ThinDiePickUpSolution:Upto2mils(Electromagnetic&Multi-StepMode);5.Integrate&InlineModule:XMemory+1controller;6.Multi-DiestackDieCapacity:Upto8layersonce;目前四十二頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)上片

(DieBond)2.DieBond

相關(guān)工藝目前四十三頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)上片

(DieBond)3.DieBond

相關(guān)材料ASubstrate/LeadframeBDieAttachFilmCWaferafterSawDMagazine彈夾目前四十四頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)Substrate

BasicStructure:CoreAuNiCuSolderMaskBondFingerViaHoleBallPad目前四十五頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)SubstrateBasicInformationCore： 玻璃纖維+樹(shù)脂mm鍍銅層： 25um+/-5um鍍鎳層um鍍金層umSolderMask：25um+/-5um總厚度： 0.10-0.56mm目前四十六頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)發(fā)料烘烤線路形成(內(nèi)層)AOI自動(dòng)光學(xué)檢測(cè)壓合4layer2layer蝕薄銅綠漆線路形成塞孔鍍銅Deburr鑽孔鍍Ni/Au包裝終檢O/S電測(cè)成型AOI自動(dòng)光學(xué)檢測(cè)出貨BGA基板製造流程(option)目前四十七頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)上片

(DieBond)4.DieBond

輔助設(shè)備A銀漿攪拌機(jī)

利用公轉(zhuǎn)自轉(zhuǎn)離心力原理脫泡及混合；主要參數(shù)有：MIXING/DEFORMINGREVOLUTIONSPEED

外加計(jì)時(shí)器；公轉(zhuǎn)用于去泡；自轉(zhuǎn)用于混合；目前四十八頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)BCuringOven無(wú)氧化烤箱主要控制要素：N2流量；排氣量；profile溫度曲線；每箱擺放Magazine數(shù)量；目前四十九頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)CWafermapping應(yīng)用目前五十頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)WireBond(引線鍵合)

DietoPackageInterconnects

Howadieisconnectedtothepackageorboard.---用金線將芯片上的引線孔和基片上的引腳連接，使芯片能與外部電路相連。在引線鍵合前需要經(jīng)過(guò)等離子清洗(Pre-BondPlasmaClean)以保證鍵合質(zhì)量,在引線鍵合后需要經(jīng)過(guò)內(nèi)部目檢(IVI),檢測(cè)出所有芯片預(yù)處理,芯片粘貼和引線鍵合產(chǎn)生的廢品.目前五十一頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)WireBond–K&SUltraKeyTechnology:1.Diepadopening(Min.):45um.2.Diepadspitch(Min.):60μm.3.SubstrateLeadwidth&Pitch(Min.):40μm&25

μm.4.Multi-LoopSelectioncoverallPackage.5.StackdiereverseBondingtoDecreaseTotalpackageThickness.

DiePadSubstrateLeadGoldWireCapillaryUltrasonicPowerHeaterBondForce目前五十二頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)焊線(WireBond)1.WireBond

相關(guān)工藝

PadOpen&BondPadPitchBallSizeBallThicknessLoopheightWirePullBallshortCraterTest目前五十三頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)焊線(WireBond)2.WireBond

相關(guān)材料SubstratewithdieCapillaryGoldWire

目前五十四頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)HowToDesignYourCapillaryTIP..……PadPitchPadpitchx1.3=TIPHole..…..WireDiameterWirediameter+0.3~0.5=HCD………Padsize/open/1stBallCD+0.4~0.6=1stBondBallsizeFA&OR….Padpitch(um)FA >100 0,4 ~90/100 4,8,11<90 11,15 ICtype……looptypeCapillary目前五十五頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)GoldWire

GoldWireManufacturer (Nippon,SUMTOMO,TANAKA….)GoldWireData (WireDiameter,Type,EL,TS)目前五十六頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)焊線(WireBond)3.WireBond

輔助設(shè)備AMicroscope用于測(cè)loopheightBWirePull拉力計(jì)（DAGE4000）CBallShear球剪切力計(jì)DPlasma微波/等離子清洗計(jì)目前五十七頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)BallSizeBallThickness

單位:um，Mil

量測(cè)倍率:50X

BallThickness計(jì)算公式

60umBPP≧1/2WD=50%60umBPP≦1/2WD=40%~50%BallSizeBallSize&BallThickness目前五十八頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)LoopHeight

單位:um，Mil

量測(cè)倍率:20XLoopHeight

線長(zhǎng)目前五十九頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)WirePull1LiftedBond(Rejected)2Breakatneck(Referwire-pullspec)3Breakatwire(Referwire-pullspec)4Breakatstitch(Referstitch-pullspec)5Liftedweld(Rejected)目前六十頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)BallShear

單位:gramorg/mil2BallShear計(jì)算公式

Intermetallic（IMC有75%的共晶,ShearStrength標(biāo)準(zhǔn)為＞6.0g/mil2。SHEARSTRENGTH＝BallShear/Area(g/mil2)BallShear=x;BallSize=y;Area=π(y/2)2 x/π(y/2)2=zg/mil2目前六十一頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)等離子工藝

PlasmaProcess氣相---固相表面相互作用

GasPhase-SolidPhaseInteractionPhysicalandChemical分子級(jí)污染物去除

MolecularLevelRemovalofContaminants30to300Angstroms可去除污染物包括ContaminantsRemoved難去除污染物包括DifficultContaminants

FingerPrintsFluxGrossContaminantsOxidesEpoxySolderMaskOrganicResiduePhotoresistMetalSalts(NickelHydroxide)目前六十二頁(yè)\總數(shù)七十二頁(yè)\編于十八點(diǎn)PlasmaClean–MarchAP1000KeyTechnology:1.ArgonCondition,Nooxidation.2.VacuumPumpdustcollector.3.CleanLevel