集成電路integritycircuit學(xué)習(xí)以及常用封裝介紹

集成電路INTEGRITY

CIRCUIT學(xué)習(xí)以及常用封閉介紹集成電路integritycircuit以及常用封閉介紹

ESD等級(jí)分類:

等級(jí)ESD敏感度(電壓)範(fàn)圍典型設(shè)備00~100VEPROM,CMOS,MOSFET,GAAS,FET,SAM1100~1000VSCR,JFET,薄膜電阻,二極管21000~4000VProtectedMOS,SCHOTTKY,TTL,OP-AMPandLSI34000~1500V大多其它半導(dǎo)體一個(gè)問題

CMOS為何比TTL電路對(duì)靜電敏感?WHATISIC?1.從PN結(jié)說起2.晶體管3.場(chǎng)效應(yīng)管4.兩種電路二極管

P-N結(jié)及其電流電壓特性晶體二極管為一個(gè)由p型半導(dǎo)體和n型半導(dǎo)體形成的p-n結(jié)，在其界面處兩側(cè)形成空間電荷層，并建有自建電場(chǎng)。當(dāng)不存在外加電壓時(shí)，由于p-n結(jié)兩邊載流子濃度差引起的擴(kuò)散電流和自建電場(chǎng)引起的漂移電流相等而處于電平衡狀態(tài)。當(dāng)外界有正向電壓偏置時(shí)，外界電場(chǎng)和自建電場(chǎng)的互相抑消作用使載流子的擴(kuò)散電流增加引起了正向電流：。當(dāng)外界有反向電壓偏置時(shí)，外界電場(chǎng)和自建電場(chǎng)進(jìn)一步加強(qiáng)，形成在一定反向電壓范圍內(nèi)與反向偏置電壓值無關(guān)的反向飽和電流I0。當(dāng)外加的反向電壓高到一定程度時(shí)，p-n結(jié)空間電荷層中的電場(chǎng)強(qiáng)度達(dá)到臨界值產(chǎn)生載流子的倍增過程，產(chǎn)生大量電子空穴對(duì)，產(chǎn)生了數(shù)值很大的反向擊穿電流，稱為二極管的擊穿現(xiàn)象。

半導(dǎo)體技術(shù)發(fā)展史

年，法拉第發(fā)現(xiàn)硫化銀（AgS）電阻率的負(fù)溫度系數(shù)，是目前所知對(duì)物質(zhì)半導(dǎo)體特性的最早發(fā)現(xiàn)。年，硒（Se）整流器出現(xiàn)。年，貝爾實(shí)驗(yàn)室的肖克萊（W.Shockley）、布拉頓（W.H.Brattain）和巴?。↗.Bardeen）發(fā)明晶體管并于1956年獲諾貝爾物理學(xué)獎(jiǎng)。年，江琪（L.Esaki<）發(fā)明了隧道二極管。年，諾依斯（R.Noyce）研制成功了世界上第一塊集成電路。半導(dǎo)體技術(shù)發(fā)展史

年，約瑟夫遜（B.D.Josephson）提出了超導(dǎo)隧道結(jié)。年，采用2um工藝，集成元件數(shù)達(dá)10萬個(gè)的64KDRAM研制成功。年，16MDRAM研制成功。年，64MDRAM研制成功。年，1GDRAM研制成功。??????PIIII

中國(guó)芯三極管

三極管相當(dāng)于兩個(gè)背靠背的二極管PN結(jié)。正向偏置的EB結(jié)有空穴從發(fā)射極注入基區(qū)，其中大部分空穴能夠到達(dá)集電結(jié)的邊界，并在反向偏置的CB結(jié)勢(shì)壘電場(chǎng)的作用下到達(dá)集電區(qū)，形成集電極電流IC。在共發(fā)射極晶體管電路中,發(fā)射結(jié)在基極電路中正向偏置,其電壓降很小。絕大部分的集電極和發(fā)射極之間的外加偏壓都加在反向偏置的集電結(jié)上。由于VBE

很小，所以基極電流約為IB=5V/50kΩ=0.1mA。如果晶體管的共發(fā)射極電流放大系數(shù)β=IC/IB=100,集電極電流IC=β*IB=10mA。在500Ω的集電極負(fù)載電阻上有電壓降VRC=10mA*500Ω=5V，而晶體管集電極和發(fā)射極之間的壓降為VCE=5V，如果在基極偏置電路中疊加一個(gè)交變的小電流ib，在集電極電路中將出現(xiàn)一個(gè)相應(yīng)的交變電流ic，有ic/ib=β，實(shí)現(xiàn)了雙極晶體管的電流放大作用。

場(chǎng)效應(yīng)管金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)三極管的基本工作原理是靠半導(dǎo)體表面的電場(chǎng)效應(yīng)，在半導(dǎo)體中感生出導(dǎo)電溝道來進(jìn)行工作的。當(dāng)柵G電壓VG

增大時(shí)，p型半導(dǎo)體表面的多數(shù)載流子棗空穴逐漸減少、耗盡，而電子逐漸積累到反型。當(dāng)表面達(dá)到反型時(shí)，電子積累層將在n+源區(qū)S和n+漏區(qū)D之間形成導(dǎo)電溝道。當(dāng)VDS≠0時(shí)，源漏電極之間有較大的電流IDS

流過。使半導(dǎo)體表面達(dá)到強(qiáng)反型時(shí)所需加的柵源電壓稱為閾值電壓VT。當(dāng)VGS>VT

并取不同數(shù)值時(shí)，反型層的導(dǎo)電能力將改變，在相同的VDS

下也將產(chǎn)生不同的IDS,實(shí)現(xiàn)柵源電壓VGS

對(duì)源漏電流IDS

的控制。模擬電路數(shù)字電路放大電路直流單級(jí)變壓器耦合阻容耦合直接耦合差動(dòng)放大交流多級(jí)交流單級(jí)直流多級(jí)集成運(yùn)放門分立門集成門TTL門電路MOS門電路組合門集成邏輯電路WHATISTTL?TTL與非門的輸入端和輸出端都是三極管結(jié)構(gòu),所以稱三極管-三極管邏輯電路.即TTL電路或T2L電路.典型TTL與非門:三態(tài)輸出門TSLTRISTATELOGIC

高電平低電平高阻態(tài)●典型應(yīng)用

1.TSL組成總線結(jié)構(gòu)

2.TSL實(shí)現(xiàn)數(shù)據(jù)雙向傳輸WHATISMOS?MOS:金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)管MOS電路可分為NMOS,PMOS,CMOS相對(duì)TTL,有以下特點(diǎn)1.微功耗—CMOS電路的單門靜態(tài)功耗在毫微瓦（nw）數(shù)量級(jí)。

2.高噪聲容限—CMOS電路的噪聲容限一般在40%電源電壓以上。

3.寬工作電壓范圍—CMOS電路的電源電壓一般為1.5~18伏。

4.高邏輯擺幅—CMOS電路輸出高電平‘1’的幅度=VDD，邏輯“0”為VSS。5.輸入阻抗高CMOS電路的輸入阻抗大于108Ω,一般可達(dá)1010Ω。6.扇出能力強(qiáng)CMOS電路的扇出能力大于507.低輸入電容--CMOS電路的輸入電容一般不大于5PF。8.寬工作溫度范圍—陶瓷封裝的CMOS電路工作溫度范圍為-550C~1250C；塑封的CMOS電路為–400C~850C。9.所有的輸入均有珊保護(hù)電路，良好的抗輻照特性等。10.工作速度低11.功耗隨頻率增加顯著增大基本概念I(lǐng)ntegratedcircuit.集成電路是相對(duì)分立元件而言,就是把整個(gè)電路的所有元件以及相互之間的聯(lián)接同時(shí)制造在一塊半導(dǎo)體芯片上.MPU存儲(chǔ)器I/O運(yùn)算器控制器ROMRAM總線ABDBCBA/D&D/A定時(shí)器/計(jì)數(shù)器中斷控制器一個(gè)超級(jí)芯片電路幾乎包括了所有IC的種類電源IC的封裝packageIC的封裝packageSSOP寬度比SOP窄SOJ相對(duì)SOLPLCC相對(duì)QFPLCCC(leadlessceramicchipcarrier)

無引線陶瓷芯片載體

STMicroelectronicsEEPROMOrderMemorycapacityInput一個(gè)現(xiàn)象???OutputOFFONInputOutputWHOISME?IWASMEMORY!半導(dǎo)體存儲(chǔ)器用于存儲(chǔ)程序、常數(shù)、原始數(shù)據(jù)、中間結(jié)果和最終結(jié)果存儲(chǔ)容量越大,記憶能力越強(qiáng)存取速度越快,運(yùn)算速度越快IC中不可或缺的一部份.技術(shù)指標(biāo)1.存儲(chǔ)容量2N－12.最大存取時(shí)間

133MZ→?NS3.存儲(chǔ)器功耗(維持功耗、操作功耗)4.可靠性(抗干擾能力)5.集成度(BIT/PCS)INTEL2764集成度為64KBIT/PCSLearningObjectivesAftercompletingthissectionyouwillbeableto:ListthetwokindsofmemoryGivenamemorycharacteristic,determinewhetheritappliestovolatileornon-volatilememoryGivenasamplememoryapplication,determinewhethervolatileornon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryKindsofMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousDefineVolatileWhatdoestheword“volatile”meantoyou?Non-Volatilevs.VolatileMemoryNon-Volatilevs.VolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHE2NANDNORVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerRETAINS

datawith

powerlossLOSES

datawith

powerlossWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?CellPhoneOperatingSystemNon-VolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?CellPhoneScratchMemoryVolatile快速緩衝貯存區(qū)CacheMemory

inaPCWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?VolatileVolatileOperatingSystemforaHandHeldDeviceWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?Non-VolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?緩衝存儲(chǔ)器BufferMemoryinaHigh-endRouterVolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?DigitalCameraPictureStorageNon-VolatileSectionSummaryYoushouldnowbeableto:ListthetwokindsofmemoryGivenamemorycharacteristic,determinewhetheritappliestovolatileornon-volatilememoryGivenasamplememoryapplication,determinewhethervolatileornon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryLearningObjectivesAftercompletingthissectionyouwillbeableto:Listthefivekindsofnon-volatilememoryMatchalistofcharacteristicstothefivekindsofnon-volatilememoryGivenasamplememoryapplication,determinewhichkindofnon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryNon-VolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousROMRead-OnlyMemoryBitpatternispermanentlyrecordedduringthemanufacturingprocess(requiresamask)Exampleuse:PagerOperatingSystemReadSpeed: GoodWriteSpeed: N/ASize: Upto4MbPower: LowFromByteMagazine,April1996PROMProgrammableRead-OnlyMemoryProgrammedusingaPROMprogrammerProgrammersendselectricsignalsatahighvoltagetospecificROMcells,effectivelyblowingfusesinthemCanbemodifiedonce-OneTimeProgrammable(OTP)Exampleuses:ColortableinflatpanelTVCableSetupBoxReadSpeed: OKWriteSpeed: PoorSize: 256Kb-8MbPower: VariesEPROMErasableProgrammableRead-OnlyMemoryProgrammedusinganEPROMprogrammerCancomeinwindowedpackagetoallowerasing/programmingErasedusingUltraviolet(UV)raysLimitedprogrammabilityMoreexpensivethanPROMIncludeEEPROMandUVEPROMExampleuses:MemoryforprototypesofIndustrialapplicationsReadSpeed: OKWriteSpeed: PoorSize: 256Kb-4MbPower: HighEEPROMElectricallyErasableProgrammableRead-OnlyMemoryProgrammedusingaprogrammerorwithJTAG(CPLD)CanbeerasedandreprogrammedbyapplyinghigherthannormalelectricalvoltageCanreplacepartoftheprogramming--noneedtoeraseitallNoneedtoremovewhenerasingorprogrammingExampleuses:PrimarilyusedindevelopmentReadSpeed: OKWriteSpeed: Poor-ModSize: 256Kb-4Mb

(to1Mbforserial)Power: LowUVEPROM紫外線擦洗FlashMemoryVariationofEEPROMErased/programmedin“blocks”CanreplaceblocksofthedataNoneedtoremovetoprogramSomeEEPROMsalsohavethisProgrammedviaEEPROMprogrammerorseriallyviaaprocessororJTAGExampleuses:DigitalCameraPictureStorageSmartMediabyToshiba(seeleft)ReadSpeed: OKWriteSpeed: PoorSize: 1Mb-64MbPower: HighBitsvs.Blocks(MinimumProgrammingSize)bitbyteblockMostNon-VolatileMemory-programmedinbitsVolatileMemory(RAM)-programmedinbytesFLASH-programmedinblocksROMTypesSectionSummaryYoushouldnowbeableto:Listthefivekindsofnon-volatilememoryMatchalistofcharacteristicstothefivekindsofnon-volatilememoryGivenasamplememoryapplication,determinewhichkindofnon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryLearningObjectivesAftercompletingthissectionyouwillbeableto:ListthetwoprimarykindsofvolatilememoryDescribethedifferencebetweenSRAMandDRAMGivenasamplememoryneed,determinewhetherSRAMorDRAMismoreappropriateMatchalistofcharacteristicstotypesofSRAMGivenasampleSRAMapplication,determinewhetherSYNC,ASYNC,ormicropower

SRAMismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryVolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousWhatIsRAM?RandomAccessMemoryVolatile-DatalostwhenpowergoesoutAllowsnon-sequentialaccessCanaccessthedataatanylocationwiththesamespeedDRAMDynamicRandomAccessMemoryDataisstoredasachargeDatamustberefreshedconstantlyAdvantagesHugedensitiespossibleLessexpensiveDisadvantagesSlowaccesstimes(around60nanosec)HigherpowerconsumptionthanSRAMDRAMCharge“l(fā)eaks”outofcapacitorandmustberefreshedOnetransistorandonecapacitorpermemorycellWordLineBitLinecapacitortransistor01DRAMCellDesign1-bitDRAMCellVoltagestoredinaDRAMcellafterwritingandrefreshoperationsVcapHIGHLOW0VVccrefreshrefreshrefreshrefresh‘1’Written‘0’storedtime01SRAMStaticRandomAccessMemoryNoneedtorefreshthedataDatastoredascurrentinatransistorAdvantagesLowerpowerconsumptionthanDRAMFasteraccesstimes(aslowas10nanosec)MorereliablethanDRAMDisadvantagesLessdensity(SRAMcellislargerthanDRAMcell)MoreexpensivethanDRAMDRAMvs.SRAMDynamicForgetsdatain5/100thsofasecondCheapestformofmemoryLargerdensitiesavailableStaticRetainsdataaslongasthepowerismaintainedFasttorespondLowPowerMorereliableDRAMSRAMCacheMemory

inaPCWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?VolatileSRAM(speedisimportant)MainMemory

inaPCWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?VolatileDRAMWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?CellPhoneDataSRAM(powerisimportant)PrinterBufferMemoryWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?DRAM3KindsofSRAMMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousAsynchronousvs.SynchronousAsynchronousPizzaOrder“Bringmeapizza

assoonas

itisready.”Asynchronousvs.SynchronousSynchronousPizzaOrder“Bringmeapizza.Meetmeatthecornerof5thandElmin30minutes.”AsynchronousSRAMNoclocking--nottimed(1in,1out)HeavilyusedinlegacysystemsCommonlycalled“CommodityMemory”UsedinapplicationswherespeedisnotcriticalAdvantagesInexpensiveReadilyavailableLegacytechnology(beenaroundalongtime)Nolatency(bitsmovetogether)DisadvantagesHavetowaittodoanythingLessdensethanDRAMMoreexpensivethanDRAMSlowaccesstimescomparedtoSyncSRAMNewerhighdensityproductsavailableonlyinSyncSynchronousSRAMDatasynchronizedtoacommonclock(pipelined)Usedforhigh-performanceapplicationsthatrequirefasterspeedsAdvantagesNew&continuedimprovementtothetechnologyPredictabletimingFasterspeedpossibleDisadvantagesMoreexpensivethanasynchronousNotmadeinlowdensities(under1Mb)AddslatencytodataaccessMicropowerSRAMExtremelylowpowerneedsCurrentlyakindofasynchronousSRAMWillbeasynchronousandsynchronousinthefutureSlowaccesstime(70nsorslower)AdvantagesLowpowerneedsinstandbyNewimprovementsallthetimeDisadvantagesSlowaccesstimesMicropowerBatteryLifeBatteryLife1999 2000 2001 2002LowPowerHigherFrequencyLowPowerTypesofSRAMWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?CellPhoneDataMicropowerWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?ModemAsyncAsynchronousSRAMBufferMemoryinaHigh-endRouterWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?SyncWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?CellPhoneOperatingSystemNoneTelecommunicationsSwitchingSystemWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?Sync(performance)3GCellularBaseStationWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?SyncSectionSummaryYoushouldnowbeableto:ListthetwoprimarykindsofvolatilememoryDescribethedifferencebetweenSRAMandDRAMGivenasamplememoryneed,determinewhetherSRAMorDRAMismoreappropriateMatchalistofcharacteristicstotypesofSRAMGivenasampleSRAMapplication,determinewhetherSYNC,ASYNC,ormicropower

SRAMismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemory

HowisanICManufactured?IC的成長(zhǎng)歷程ICFABProcessFabSlicedWafersCompletedWaferLayersConductive PolySiliconMetalInsulatingPhotoResistPatternPlasmaEtch等離子酸刻RepeatProcessWaferwithMetalCircuitPatternICFABProcess晶圓排序WaferSortWaferICASSEMBLYProcess目檢SAW粘貼BOND封裝MOLDTRIMANDFORMICTESTProcessTestTESTProgramICDIMENSIONTESTProcessLeadscanGoodDeviceRejectedDeviceOpticalScanningEquipmentisusedtoexamineeachleadtodetermineifit’spitch,angleandcoplanarityarewithinspecifiedlimits.ICMARKProcessMarkBlankDeviceLaserMarkInkMarkCypressSHIPPINGMethodsStandardTubesTapeandReelStandardTrayDryPackICMANUFACTURINGProcessFABASSEMBLYTESTFPOF/G(3-5weeks)(1-2weeks)(1week)(2weeks)DieBankBinInventoryWaferFabricationDeviceAssembly&PackagingElectricalClassTestFinalProcessingOperationsFinishedGoodsAreasinvolvedintheStandardManufacturingProcess:InventoryStagingLocationInventoryStagingLocation(4-5weeks)(3-5weeks)(7-10weeksTotalCycletime)PACKAGINGCAPABILITYPKGPKGwidthavailableleadcountPDIP300mil8,14,16,18,20,24,28,32,64600mil22,24,28,32,40,42,48,56SOJ300mil20,24,26,28,32400mil24,28,32,36,40,42,44SOJ-TapeLOC300mil24400mil42SOP8,14,16,24,28,32SSOP48,56TSOP(I)28,32,40,48TSOP(II)20,24,40,44,50,54TSOP(II)-TapeLOC40,44PKGbodysizeavailableleadcountPLCC20,28,44,52,68,84QFP10X10mm44,48,5214X20mm64,80,100,12828mmSQ120,128,132,144,160,208,25632mmSQ24040mmSQ304LQFP7mmSQ32,44,4810mmSQ44,64,8012mmSQ80,10014mmSQ64,80,100,120,12814X20mm100,12820mmSQ144,160,17624mmSQ160,176,21628mmSQ160,208,256TQFP7mmSQ4810mmSQ44,64,8012mmSQ80,10014mmSQ64,80,100,120,128In-line&staggeredpadsconfigurationBGApadsconfigurationPKGPKGsizeballpitchavailableballcountPBGA14X22mm1.27mm119,15315mmSQ1mm156,196(fullmatrix)17mmSQ192,208,256(fullmatrix)19mmSQ256(fullmatrix)23mmSQ1.5mm120,144,160,169(fullmatrix)27mmSQ1.5mm225(fullmatrix)1.27mm256~36531mmSQ1.27mm272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665HSBGA27mmSQ1.27mm256~36531mmSQ272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665HSBGA27mmSQ1.27mm256~36531mmSQ272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665PKGPKGsizeballpitchavailableballcountViperBGA27mmSQ1.27mm25635mmSQ35240mmSQ432PKGavailableballcountL(F)BGA66~256T(F)BGA36~256PKGavailableballcountFilmBGA112,132,144,180,208,280mBGA62FC-CSP36~200COS54BCC/BCC++8,16,20,24,32,48,64

OUTLINE&DIMENSIONSOJFig.160umin-lineballbondprofileFig.2Straightwiresfrom170to200mil(4.3to5.1mm)inlengthwith60umin-linepadpitchFig.3Aftermolding.WiresweepisundergoodcontrolFig.6StaggeredbondFig.4Slanted&Rightfan-out(d1isnarrowerthand2)

PROCESSFLOWSTANDARDMATERIAL

WAFERMOUNTWAFERSAW/CLEAN2ndOPTICAL(GATE)DIEATTACHEPOXY: ABLESTIK8355FSUBSTRATE:BTRESINDIEATTACHCUREPLASMACLEANWIREBONDGOLD WIRE:99.99%Au3rdOPTICAL(GATE)PLASMACLEANMOLD COMPOUND: PLASKONSMT-B-1 Series/TOSHIBAKE-1100A TOPSIDEMARKINGWHITEINKPOSTMOLDCURESOLDERBALLMOUNT SOLDERBALL:Sn/Pb=63/37FLUXCLEAN FLUX:WATERSOLUBLESINGULATIONFINALVISUALINSPECTION(GATE)PACKING BAKEABLEJEDECTRAYOPTIONALPROCESS:WAFERBACKGRINDING/DRYPACKING常用IC封裝介紹BGAIC封裝介紹

PROCESSDEVELOPMENTProcessforICpackagingisupdatedsoonforseveralreasons.Thefirstistheever-reducingscaleinwaferfabricationtechnology.Thesecondisthedemandsforhighcircuitryintegration,andthethirdisthedemandsforhighperformance.MCM,oneoftheprominentpackagingtechnology,canprovidehighI/Obyintegratingtwoormorechipsintoasinglepackage.2Dand3DMCMsareavailablenow.FinePitchisrelatedtotheprocessissuesabouthowmuchthebondpadcanbenarroweddown,andhowtodesignthebondpadsinordertomeettheminimumcriterionofwirebonding.CurrentwirebondingcapabilityofASEisalsopresented.FlipChip/WaferBumpingisthesolutionstoKGD(knowngooddie)onCOB(chiponboard),andprovidesthedensestI/Opadroutingonwholechip.Flipchipalsoelimin