日本電氣化學(xué)(Denka)散熱鋁基板中文介紹

1、 Insulated Metal Substrate HITT PLATE絕緣高導(dǎo)熱鋁基板 DENKI KAGAKU KOGYO K.K.日本電氣化學(xué)工業(yè)有限公司DENKAQQ:79124316he field suitable for Hybrid IC 適用與混合集成電路領(lǐng)域.Audio 音頻Power AMP. 功率放大器Pre-AMP. 前置放大器Motor driver 馬達(dá)驅(qū)動(dòng)器Transistor 晶體管Inverter 換流器Micro-strip circuit 微帶型混頻器Oscillator 振蕩器 Regulator 調(diào)節(jié)器EPS 應(yīng)急電源裝置

2、Power module 電源模塊 高導(dǎo)熱鋁基板(IMS) 標(biāo)準(zhǔn)SW regulator 開(kāi)關(guān)調(diào)節(jié)器DC/DC Converter 直流/直流轉(zhuǎn)化器 LED 發(fā)光二極管CPU board 中央處理器主板Power supply 電源供應(yīng)器VTR, TV 磁帶錄像機(jī),電視Tuner 調(diào)諧器Regulator 調(diào)節(jié)器Suitable field for IMSThe Motor regulator 馬達(dá)調(diào)節(jié)器 Automotive 汽車(chē)New Usage 新應(yīng)用 Communication 通訊High frequency AMP 高頻放大器Computer 電腦Power Electronics

3、 動(dòng)力電子設(shè)備Power Supply 電源供應(yīng)器適用于工業(yè)管理學(xué)會(huì) Classification of printed circuit board 印刷線路板的分類(lèi) Ceramic substrate 陶瓷基片 Insulated Metal Substrate 絕緣金屬基材Substrate with thick film circuit.厚膜陶瓷線路板 Substrate with thin circuit.薄膜陶瓷線路板Substrate Multi-layer 多層陶瓷線路板Metal Base Substrate ( Al, Cu, Fe) 金屬基材(鋁,銅,鐵)Metal Cor

4、e Substrate (Al, Cu, Fe)金屬芯基材(鋁,銅,鐵) Metal Base Substrate with Multi-Layer (FR-4)多層環(huán)氧樹(shù)脂金屬基材Paper based material (phenol) 紙基板(酚基材)Glass cloth based material (epoxy, polyimide)玻璃基材（環(huán)氧樹(shù)脂，聚酰亞胺）Rigid substrate剛性基板Organic substrate有機(jī)基板 Flexiuble substrate柔性基板e(cuò) Composite (combination with different materia

5、ls)復(fù)合材料（與不同的材料結(jié)合）Thermoplastic resin 熱塑性樹(shù)脂F(xiàn)ilm material (polyimide, polyester)薄膜材料（聚酰亞胺，聚酯）*Al base typeEvaluate item評(píng)估項(xiàng)目Insulated metal substrate絕緣金屬基材Alumina substrate 鋁基材Glass-epoxy substrate玻璃環(huán)氧樹(shù)脂基材Thermal resistance ºC/W熱變電阻0.6(80um)0.7(635um)3.41.6mmBreakdown voltage 擊穿電壓Heat resistance 耐

6、熱性Dielectric constant 介電常數(shù)7-894-5Specific heat 比熱系數(shù)0.280.370.19Mechanical strength 機(jī)械強(qiáng)度XProcessing 制程XMass process 量產(chǎn)性基本類(lèi)型Comparison of properties with each substrate 每種基材的性能對(duì)照Typical structure of IMS 標(biāo)準(zhǔn)層的典型結(jié)構(gòu)Conductor (Cu foil, etc.) 導(dǎo)體（銅箔等）Insulator絕緣層Metal Base（Al, Cu, Fe, etc.)金屬基材（鋁，銅，鐵等）Typica

7、l structure of HIC 典型的混合集成電路結(jié)構(gòu)Ni plating 鎳層Al wire鋁絲Plastic case塑膠外殼Semiconductor半導(dǎo)體Chip resistance貼片電阻Resin 樹(shù)脂Lead terminal引線端子Insulator絕緣層Aluminum board 鋁板IMS 標(biāo)準(zhǔn)層Development performance of IMS 標(biāo)準(zhǔn)層的發(fā)展方向Improvement of Insulator 絕緣層的改善Higher thermal conductivity, higher reliabilityand higher heat res

8、istance.更高的導(dǎo)熱系數(shù)，高可靠性和高耐熱性.Field of each substrate 每種基材的領(lǐng)域Industrial machine工業(yè)機(jī)器Rated voltage(V)額定電壓Air conditioner500 空調(diào)設(shè)備HITT PLATE(IMS)高導(dǎo)熱鋁基板Alumina substrate氧化鋁層AlN substrate氮化鋁層Audio音頻50100Rated current(A)額定電流Market request市場(chǎng)需求Cost down, down sizing and Higher thermal conductivity低成本小型化高導(dǎo)熱系數(shù) TH-

9、1高耐熱高導(dǎo)型K-1 一般型性型 Thermal 2W/mKconductivity導(dǎo)熱系數(shù) 4W/mKB-1超高導(dǎo)熱型8W/mKLineup of HITT PLATEs insulator 絕緣高導(dǎo)熱鋁基板的應(yīng)用范圍Thermal conductivity (W/mK) 導(dǎo)熱系數(shù)Usage : Industry, LED, etc. 應(yīng)用：工業(yè)，LED等B-1超高導(dǎo)熱型Usage : Consumer products, Industry, etc.應(yīng)用：消費(fèi)品，工業(yè)等TH-1高耐熱高導(dǎo)熱型M-2K-1一般型 High heat resistance 高耐熱性High heat resis

10、tanceHeat cycle reliability 長(zhǎng)期可靠性EL-1高耐焊裂型Usage : Only automotive應(yīng)用：僅僅汽車(chē)Comparison of HITT PLATE 高導(dǎo)熱鋁基板對(duì)照Thermal resistance ºC/W 熱變電阻1.210.80.60.40.20Alumina substrate氧化鋁層050100150200600650Thickness of insulator 絕緣層厚度IMS B-1(8W/mK) type IMS B-1類(lèi)型(0.125mmt)熱變電阻耐熱測(cè)試的結(jié)果Alumina DBC氧化鋁合基板(0.635mm)Te

11、st sample 測(cè)試樣品基材substrateTO-220Low低High高（2SC2233)Max.temp.最高溫度The results of thermal resistance by thermal viewerProperty 性能Test method測(cè)試方法Unit單位一般型K-1高導(dǎo)熱高耐熱型TH-1超高導(dǎo)熱型B-1Thermal conductivity導(dǎo)熱系數(shù)Laser flash method 激光閃光光解W/mK2.04.08.0Thermal resistance熱變電阻DKK method便攜式PH分析儀º/W0.640.460.35Thicknes

12、s of insulator 絕緣層厚度SEM 掃描式電子顯微鏡um100125125Dielectric breakdown 介電擊穿voltagestep by step逐步增加kV6.86.35.2Peel strength 剝離強(qiáng)度Based on JIS C6481基于日本工業(yè)標(biāo)準(zhǔn)C6481N/cm25.222.127.7Tg 結(jié)晶溫度TMA熱機(jī)械分析儀º104165165Volume resistivity體積電阻率at 25º 在25度下cm 154.3×10 161.9×10 156.1×10Dielectric conctan

13、t介電常數(shù)at1M Hz 在1兆赫茲7.17.87.4Dielectric loss tangent介電損耗at1M Hz 在1兆赫茲0.0040.0180.013Typical properties of super high thermally conductive type典型的超高導(dǎo)熱類(lèi)型性能DC/DC converter 直流/直流轉(zhuǎn)化器ECU電氣轉(zhuǎn)化裝置Generator發(fā)動(dòng)機(jī) PLATE高導(dǎo)熱鋁基板EPS應(yīng)急電源Suspension controllerDENKA HITT PLATE in Automotive 日本電氣化學(xué)公司高導(dǎo)熱鋁基板在汽車(chē)上的應(yīng)用 懸浮控制器Techni

14、cal trend of EPS應(yīng)急電池的技術(shù)趨勢(shì)Replace to EPS應(yīng)急電源的替代Fuel efficient will be better3% compared withhydromechanical power steering與流體動(dòng)力轉(zhuǎn)向相比較燃燒性提高了3%Rapid diffusion to 1000cc 2000cc car迅速提高了1000cc-2000cc卡路里<Inquiry>查詢(xún)High thermal conductivityHigh heat resistance高導(dǎo)熱系數(shù)高耐熱性 Large current 大電流 reliability ag

15、ainst solder crack可靠性防焊裂 Improvement to decrease solder cracks of bear chip改善了芯片的焊裂A shape of substrate under heat cycle test 基材熱循環(huán)測(cè)試的模擬Case of cool down在容器中冷卻Chip resistor貼片電阻Solder 焊盤(pán)Aluminum plate鋁板Case of heat up在容器中加熱Aluminum plate鋁板Solder crack /Close up 焊盤(pán)開(kāi)裂/斷路Solder crack焊盤(pán)開(kāi)裂Chip resistor貼片電

16、阻Solder焊盤(pán)Cu foil銅箔Chip resistor貼片電阻Solder焊盤(pán)Solder crack焊盤(pán)開(kāi)裂Insulator絕緣層Al base plate鋁基Glass transition point ()玻璃化溫度()Typical properties of high heat cycle reliability type ”EL-1”耐焊裂型“EL-1”高熱循環(huán)典型性測(cè)試Revised 修訂 : 08/23/'01Items 項(xiàng)目Thermal conductivity (W/mK)導(dǎo)熱系數(shù) Measurement condition, etc.測(cè)量條件等TMA

17、method or DMA method機(jī)械方法和動(dòng)態(tài)力學(xué)方法 高導(dǎo)熱高耐熱TH-14.0一般型K-12.0耐焊裂型EL-12.4-2.7104(TMA)57(DMA)Volume resistivity (Ohm cm)體積電阻率Dielectric constant 介電常數(shù)Dielectric loss tangent 介電損耗Thickness of dielectric layer (um) 介電層厚度Thermal resistance (/W) 熱變電阻 25 在25度下 1MHz 在1兆赫茲 1MHz 在1兆赫茲SEM 掃描式電子顯微鏡Denka method 便攜式PH分析儀

18、4.5 X 10167.20.004125(Y type)0.504.3 X 10157.00.004100(Y type)0.641.0 10157.40.0241100.51-0.55Peeling strength (N/cm) 剝離強(qiáng)度 Normal condition：Based on JIS C6481 正常狀態(tài)：基于日本工業(yè)標(biāo)準(zhǔn)C6481 22.125.219.6Dielectric breakdown voltage（KV）Normal condition正常狀態(tài)8.36.83.5*1voltage method 介質(zhì)擊穿電壓KV 逐步增加電壓 1000hrs after 85

19、,85%RH,DC100V treatment 1000個(gè)小時(shí)85,85濕度直流電壓100V% 5.7*11000hrs after 150,DC100V treatment 在150，電壓100V情況下1000小時(shí)后 5.0 5.55.7*14.2*13.8*14.0*13.7*1Crack at solder after heat-cycle焊盤(pán)開(kāi)裂在焊后加熱 Liquid-Liquid 液液層分析-40(7min.) +125（7min.)500 cycles 500個(gè)循環(huán)， Rate of Grade-C,D(%) 比率和等級(jí)1000 cycles 1000個(gè)循環(huán)， 631000312

20、125 chip resistor mounted 2125貼片電阻安裝All figures in the tables are typical values.所有的表格里是平均值 *1 Measured with comb-shaped pattern. 測(cè)量都是用梳型模式 *2 50hrs after PCT treatment. 壓力鍋煮實(shí)驗(yàn)50小時(shí)后 Rate of Grade-C,D(%) 比率和等級(jí)Temperature measurementTO-220 (2SC2233)溫度測(cè)量Grade-A A等級(jí)的沒(méi)有開(kāi)裂No crack2125 Tip resistor 2125小電阻

21、Grade-B B等級(jí) 芯片和焊盤(pán)連接處開(kāi)裂Crack at connection between chip and solder. Silicone grease硅層Heatsink（Water-cooled） 散熱器(水冷)Dielectric layer介電層Al plate鋁板Eutectic solder共熔焊接 Grade-C Grade-DCrack extending from the connection between chip and solderC等級(jí) 從芯片和焊盤(pán)連接處延伸出去開(kāi)裂.Crack開(kāi)裂Broken electrical conductivity.D等級(jí) 導(dǎo)

22、電破壞Crack開(kāi)裂Crack 開(kāi)裂Fig.1 Measurement for thermal conductivity 引1:測(cè)量導(dǎo)電率 Size of Cu land under Tr. : 10 X 15mm,銅面的尺寸:10×15mm Size of substrate : 30 X 30mm,基材的尺寸: 30×30mmFig.2 Grade of cracks after heat cycleGlass transition point ( C) TMA method or DMA method 165(TMA): Step by step increasing

23、 96 hrs after PCT壓力鍋煮（121 ,2atm） treatment 96小時(shí)（121,2大氣壓）情況下 8.2 引2.在熱循環(huán)之后開(kāi)裂的等級(jí)100Incidence of solder crack (%) 焊裂的發(fā)生率8060K-1General type一般型Chip size : 2125 芯片尺寸:2125Heat cycle condition : -40125 熱循環(huán)條件: -401254020EL-1High heat cycle reliability type 高熱循環(huán)可靠型005001000Number of heat cycleComparison of

24、solder crack property 焊盤(pán)開(kāi)裂的性能比較 熱循環(huán)次數(shù)High heat resistant type “M-2” 高耐熱型”M-2” Table.MOT of the dielectric layers 介電層的表單數(shù)值Items 項(xiàng)目Maximam Operating Temperture（） by UL 在紫外線烘烤下,最大操作溫度High heat resistant typeM-2高耐熱型(Under developing顯影后）1)155Traditional TypeK-1一般型1151.E+05 1.E+041.E+03 1)It is a recognit

25、ion acquisition schedule in June-2005. 在2005年六月測(cè)試識(shí)別進(jìn)度表1.E+02250200150100Oven Temperture 烤箱溫度Fig1Heat resistant test 引1.耐熱測(cè)試(Dielectric Strength)絕緣強(qiáng)度 New substrate has the high MOT(UL specification) and the excellent reliability.新的基材有很高的關(guān)鍵性(UL規(guī)格下)和卓越的可靠性High heat resistant type “M-2” 高耐熱型M-2Table 1.

26、Characteristics of the dielectric layers表一 . 介電層的特性 Items 項(xiàng)目High heat resistant type M-2 (under developing)耐高熱型M-2(顯影后)Traditional Type K-1一般類(lèi)型K-1Maximum Operating Temperature() by UL UL 最大操作溫度 1)155115Thermal Conductivity (w/mk) 導(dǎo)熱系數(shù)22Volume resistivity(.cm) at 25 () 體積電阻率在25度下13>1013>10Diele

27、ctric Constant 1MHz, at 25 () 介電常數(shù)在1兆赫茲,25度下4.47.1Dielectric loss tangent 1MHz, at 25 () 介電損耗在1兆赫茲,25度下0.0040.004Samples AL base plate: 1.5mm,Cu foil: 70um, dielectric layer: 150 um 鋁基板樣品:1.5毫米, 銅箔: 70微米, 介電層: 150微米1) It is a recognition acquisition schedule in June-2005 在2005年六月測(cè)試識(shí)別進(jìn)度表 D E N K A High heat resistant type “M-2” 高耐熱型M-2 Table 2. Durability test result (typical values) 表二 . 耐久性試驗(yàn)結(jié)果(平均值)Items 項(xiàng)目Treatment conditions 條件設(shè)定Dielectric breakdown voltage strength (kv)