spcs003技術解析英特爾非存儲讓可能性更不可思議

1、技術：英特爾非，讓可能性更不可思議。Rob CrookeSenior Vice President and General Manager, Non-Volatile Memory Solutions GroupIntel CorporationSPCS003“ 理想情況下，您可能更想擁有一個無限大, 這樣任何特定的 的信息將可以被立即獲取. 這看上去是行不通的從物理層面去實現(xiàn)這樣大的容量. 我們因此被迫認可這樣一種的層次結構,可能性, 去構建一個其中每一層都比上一層的容量更加大速度會變低.”但是它的電子計算機裝置邏輯結構初探和馮·諾依曼, 1946·,“ 理想情況下，您可

2、能更想擁有一個無限大, 這樣任何特定的 的信息將可以被立即獲取. 這看上去是行不通的從物理層面去實現(xiàn)這樣大的容量. 我們因此被迫認可這樣一種的層次結構,可能性, 去構建一個其中每一層都比上一層的容量更加大速度會變低.”但是它的電子計算機裝置邏輯結構初探和馮·諾依曼, 1946·,的分層內(nèi)存和在過去的 40 年 性能問題隨著時間逐漸變大SRAM時延: 1X數(shù)據(jù)容量: 1XDRAM時延: 10X數(shù)據(jù)容量: 100XCPU 性能以介質(zhì)為標準20K 次讀耗時硬盤時延: 10 MillionX數(shù)據(jù)容量: 10,000X96980002040608Source: Intel Measu

3、rementsTechnology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.PerformanceMulticoreCPUCPUDISK的分層內(nèi)存和在過去的 40 年 NAND 固態(tài)盤緩和了分層間的巨大性能落差SRAM時

4、延: 1X數(shù)據(jù)容量: 1XDRAM時延: 10X數(shù)據(jù)容量: 100XNAND 固態(tài)盤時延: 100,000X數(shù)據(jù)容量: 1,000X硬盤時延: 10 MillionX數(shù)據(jù)容量: 10,000XTechnology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Inte

5、l specifications.數(shù)據(jù)量的激增需要技術來進行最優(yōu)化隨機數(shù)據(jù)低隊列深度和緩存行大小,業(yè)內(nèi)很多人都在尋找“理想的”金融服務反科學研究技術驅(qū)動: NVM 引領者3D MLC 和TLC NAND固態(tài)盤替換傳統(tǒng)機械硬盤的基石3oint和內(nèi)存的基石超高性能3d nand 帶來帶來到這里從這里ü 更快 讀寫ü 增加 功效ü 改良的命等級 使 TLC 達到多種壽3D NAND2D NANDü 上佳的 數(shù)據(jù)完整性 - RBER,cycling, and retentionSource Intel datasheets. Comparing tProg an

6、d Tread for 20nm 2D NAND to 3D NAND gen. 13d nand 密度更高浮柵單元電荷捕獲單元1Floating Gate cell 的空間占用最小高密度1陣列1更有效的利用CMOS 在陣列之下221Floating Gate has smaller overheadSource Intel measured data剖面More Gb/mm2陣列下的CMOS3D NAND 陣列上層金屬3d nand 3D NAND 是基于已被證明的技術- 浮柵單元相關的物理學和材料學已非常成熟- 浮柵單元已經(jīng)量產(chǎn)了四分之一個世紀 英特爾在半導體制程和生產(chǎn)上處于者地位-第一個

7、實現(xiàn)間距重覆, 第一個實現(xiàn) 3X 納米, 第一個達到 2X 納米, 第一個實現(xiàn)字線空隙, 第一個實現(xiàn)High-K工藝-我們深知如何讓新技術實現(xiàn)快速量產(chǎn)一個全新種類的和內(nèi)存3oint技術3oint 技術為追求大內(nèi)存容量 按字 即刻獲取 字(緩存行)交叉節(jié)點結構選擇器支持高密封裝的非介質(zhì)的進步相容的轉換和單元介質(zhì)以及按位即刻獲取高性能 的單元和陣列架構，可以令狀態(tài)切換比Nand快1000倍¹大內(nèi)存容量交叉& 可擴展性層可以以3D方式堆疊1Technology claims are based on comparisons of latency, density and write

8、 cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.3oint 技術SRAM時延: 1X數(shù)據(jù)容量: 1XDRAM時延: 10X數(shù)據(jù)容量: 100X3oint時延: 100X數(shù)據(jù)容量: 1,000XNAND時延: 100,000X數(shù)據(jù)容量: 1,000X硬盤時延: 10 MillionX數(shù)據(jù)容量: 10,000 XTechnology claims ar

9、e based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.NVMe 與3oint 技術Latency (uS),000固態(tài)盤 NAND 技術相對硬盤降低了100倍 時延125NVMe 消除了大約20 微秒的時延10075oint 技術降低了非的時延，相35

10、0對 NAND 固態(tài)盤時延大約減少了10倍25驅(qū)動器時延器時延軟件時延0HDDSSD NANDSSD NAND SSD 3oint(例如. SAS HBA)+SAS/SATA+SAS/SATA+NVMe+NVMeSource Storage Technologies Group, IntelTechnology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications

11、of in-market memory products against internal Intel specifications.英特爾® Optane 技術范例NVMe 固態(tài)盤加上Optane 技術可以帶來身臨其境的，真正地無間斷開放世界體驗基于 3oint的所有固態(tài)盤形態(tài)M.2插卡式(AIC)U.2 2.5in.oint 技術3屏障內(nèi)存SRAM時延: 1X數(shù)據(jù)容量: 1XDRAM時延: 10X數(shù)據(jù)容量: 100X3oint 時延: 100XNAND 固態(tài)盤時延: 100,000X數(shù)據(jù)容量: 1,000X數(shù)據(jù)容量: 1,000X硬盤時延: 10 MillionX數(shù)據(jù)容量: 10

12、,000 XTechnology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.INTEL DIMMsoint 技術基于 3Intel DIMM(基于 3oint技術) 同 DDR4 在電氣及物理上兼容 支持下一代基于英特爾&

13、#174; 至強® 處理器的平臺 提升高達4倍內(nèi)存容量, 并相比 DRAM 顯著降低成本 無需修改系統(tǒng)或者應用，就能獲得大內(nèi)存帶來的好處未來至強®處理器DDR4 DIMM(作為回寫緩存)新興的非技術你會如何利用并發(fā)展？補充信息 您可通過IDF的技術課程目錄此次課程的PDF文稿也可以在技術課程目錄的首頁。 Demos in the showcase Kiosk #426 and #428. Intel® Optane Technology SSD Prototype Demonstration; Dual Port NVMe* for High Availabili

14、ty Storage Architecture Technology Demonstration. More web based info: Additional info for Ceph commu19Other technical sessionsSession IDTitleDayTimeRoomSSDS001Delivering Cost-Effective, High Performance Storage Solutions with Todays NVM Express* Solid State Drives and Tomorrows Intel® Optane T

15、echnologyThurs13:15ZhouSSDS002What You Need to Know to Win the Storage Transition: Preparing for NVM Express* and PCI Express* in the Client and Data CenterThurs15:45ZhouLegal notices and disclaimersIntel technologies features and benefits depend on system configuration and may require enabled hardw

16、are, software or service activation. Learn more at , or from the OEM or retailer.No computer system can be absolutely secure.Tests document performance of components on a particular test, in specific systems. Differences in hardware, software, or configuration will affect actual performance. Consult

17、 other sources of information to evaluate performance as you consider your purchase. For more complete information about performance andbenchmark results, visit.Cost reduction scenarios described are intended as examples of how a given Intel-based product, in the specified circumstances and configur

18、ations, may affect future costs and provide cost savings. Circumstances will vary. Intel does not guarantee any costs or cost reduction.This document contains information on products, services and/or processes in development. All information provided here is subject to change without notice.Contact

19、your Intel representative to obtain the latest forecast, schedule, specifications ands.Statements in this document that refer to Intels plans and expectations for the quarter, the year, and the future, are forward-looking statements that involve a number of risks and uncertainties. A detailed discus

20、sion of the factors that could affect Intels results and plans is included in Intels SEC filings, including the annual report on Form 10-K.The products described may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current charact

21、erized errata are available on request.No license (express or implied, by estoppel or otherwise) to any intellectual property rights is granted by this document.Intel does not control or audit third-party benchmark data or the web sites referenced in this document. You should visit the referenced we

22、b site and confirm whether referenced data are accurate.Intel, XPoint, Optane, Xeon and the Intel logo are trademarks of Intel Corporation in the United States and other countries.*Other names and brands may be claimed as the property of others.© 2016 Intel Corporation.Risk factorsThe above sta

23、tements and any others in this document that refer to future plans and expectations are forward-looking statements that involve a number of risksand uncertainties. Words such as "anticipates," "expects," "intends," "goals," "plans," "believes,&q

24、uot; "seeks," "estimates," "continues," "may," "will," "should," and variations of such words and similar expressions are intended to identify such forward-looking statements. Statements that refer to or are based on projections, uncertain

25、events or assumptions also identify forward-looking statements. Many factors could affect Intel's actual results, and variances from Intel's current expectations regarding such factors could cause actual results to differ materially from those expressed in these forward-looking statements. I

26、ntel presently considers the following to be important factors that could cause actual results to differ materially from the company's expectations. Demand for Intel's products is highly variable and could differ from expectations due to factors including changes in business and economic con

27、ditions; consumer confidence or income levels; the introduction, availability and market acceptance of Intel's products, products used together with Intel products and competitors' products; competitive and pricing pressures, including actions taken by competitors; supply constraints and oth

28、er disruptions affecting customers; changes in customer order patterns including order cancellations; and changes in the level of inventory at customers. Intel's gross margin percentage could vary significantly from expectations based on capacity utilization; variations in inventory valuation, i

29、ncluding variations related to the timing of qualifying products for sale; changes in revenue levels; segment product mix; the timing and execution of the manufacturing ramp and associated costs; excess or obsolete inventory; changes in unit costs; defects or disruptions in the supply of materials o

30、r resources; and product manufacturing quality/yields. Variations in gross margin may also be caused by the timing of Intel product introductions and related expenses, including marketing expenses, and Intel's ability to respond quickly to technological developments and to introduce new products

31、 or incorporate new features into existing products, which may result in restructuring and asset impairment charges. Intel's results could be affected by adverse economic, social, political and physical/infrastructure conditions in countries where Intel, its customers or its suppliers operate, i

32、ncluding militaryand other security risks, natural disasters, infrastructure disruptions, health concerns and fluctuations in currency exchange rates. Results may also be affected by the formal or informal imposition by countries of new or revised export and/or import and doing-business regulations,

33、 which could be changed without prior notice. Intel operates in highly competitive industries and its operations have high costs that are either fixed or difficult to reduce in the short term. The amount, timing and execution of Intel's stock repurchase program could be affected by changes in Intel's priorities for the use of cash, such as operational spending, capital spending, acquisitions, and as a result of changes to Intel's cash flows or changes in tax laws. Product defects or errata (deviations from published specifications) may adversely impact our expe