TCAD工具簡介

1、 Fig. 2. Current flow lines in a 0.13-micron nMOSFET at Vgs=1.5V and Vds=3.0V. The shading represents the current density. NOFFSET3D mesh at the back of a shallow isolation trench. The gate oxide is removed for better viewing. The silicon channel area is shown in pink and the polysilicon gate, which

2、 dips into the trench is shown in raspberry. SiGe HBT with nitride spacers (gray). Oxide regions are not shown. The doping profiles are superimposed on the polysilicon and silicon areas. N-doped areas are red, p-doped areas are blue. The axis-aligned mesh is created with MESH. Right: Evolution of th

3、e current density in an SOI MOSFET during exposure to radiation with a dose rate of 50krad/sec. The device is biased at Vgs = 0 V and Vds = 2 V. The radiation charges up traps, in particular in the buried oxide (brown region at the bottom). This creates a leakage path along the silicon/buried oxide

4、interface. The current densities ranges from 103Acm-3 (red). Left: Drain current as a function of time during the irradiation. Optical field distribution for a VCSEL diode. The inset shows the emitted optical power as a function of the injected current. The INSPECT graphical user interface. Shown the plot of an IdVgs curve and the dialog window for interactive extraction of the threshold voltage. The Tecplot-ISE graphical user interface. In the graphic area the current flow lines in FinFET device are shown. Typical parameter extractio