光伏行業(yè)常用術(shù)語(yǔ)

1、Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.晶錠 -由多晶或單晶形成的圓柱體，晶圓片由此切割而成。Laser Light- Scattering Event - A signal pulse that locates surface imperfections on a wafer.激光散射 -由晶圓片表面缺陷引起的脈沖信號(hào)。Lay - The main direction of surface texture on a wafer

2、.層 -晶圓片表面結(jié)構(gòu)的主要方向。LightPointDefect (LPD) (Not preferred; seelocalized light-scatterer)光點(diǎn)缺陷 (LPD) （不推薦使用，參見(jiàn)“局部光散射”）Lithography- The process used to transfer patterns onto wafers.光刻 -從掩膜到圓片轉(zhuǎn)移的過(guò)程。Localized Light-Scatterer- One feature on the surface of a wafer, suchas a pit or a scratch that scatters li

3、ght. It is also called a light point defect.局部光散射 - 晶圓片表面特征，例如小坑或擦傷導(dǎo)致光線散射，也稱(chēng)為光點(diǎn)缺陷。Lot - Wafers of similar sizes and characteristics placed together in a shipment.批次 -具有相似尺寸和特性的晶圓片一并放置在一個(gè)載片器內(nèi)。Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as ele

4、ctrons in an N-Type area.多數(shù)載流子 - 一種載流子，在半導(dǎo)體材料中起支配作用的空穴或電子，例如在N型中是電子。Mechanical Test Wafer- A silicon wafer used for testing purposes.機(jī)械測(cè)試晶圓片-用于測(cè)試的晶圓片。Microroughness- Surface roughness with spacing between the impuritieswith a measurement of less than 100m.微粗糙 -小于 100 微米的表面粗糙部分。Miller Indices , of a

5、Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.Miller 索指數(shù) - 三個(gè)整數(shù)，用于確定某個(gè)并行面。這些整數(shù)是來(lái)自相同系統(tǒng)的基本向量。1 / 7Minimal Conditions or Dimensions- The allowable conditions fordetermining whether or not a wafer is considered acceptable.最小條件或方向-確定晶圓片是否合格的允許條件。M

6、inority Carrier- A carrier, either a hole or an electron that is notdominant in a specific region, such as electrons in a P-Type area.少數(shù)載流子 -在半導(dǎo)體材料中不起支配作用的移動(dòng)電荷，在P 型中是電子，在N型中是空穴。Mound- A raiseddefecton the surfaceof a wafer measuring more than 0.25mm.堆垛 -晶圓片表面超過(guò) 0.25 毫米的缺陷。Notch - An indent on the ed

7、ge of a wafer used for orientation purposes.凹槽 -晶圓片邊緣上用于晶向定位的小凹槽。Orange Peel - A roughened surface that is visible to the unaided eye.桔皮 -可以用肉眼看到的粗糙表面Orthogonal Misorientation-直角定向誤差 -Particle - A small piece of material found on a wafer that is not connected with it.顆粒 -晶圓片上的細(xì)小物質(zhì)。Particle Counting

8、- Wafers that are used to test tools for particle contamination.顆粒計(jì)算 -用來(lái)測(cè)試晶圓片顆粒污染的測(cè)試工具。Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.顆粒污染 -晶圓片表面的顆粒。Pit - A non-removable imperfection found on the su

9、rface of a wafer.深坑 -一種晶圓片表面無(wú)法消除的缺陷。Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.點(diǎn)缺陷 -不純凈的晶缺陷，例如格子空缺或原子空隙。Preferential Etch -優(yōu)先蝕刻 -2 / 7Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photol

10、ithography process, and metalcontamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.測(cè)試晶圓片 -影印過(guò)程中用于顆粒計(jì)算、 測(cè)量溶解度和檢測(cè)金屬污染的晶圓片。對(duì)于具體應(yīng)用該晶圓片有嚴(yán)格的要求，但是要比主晶圓片要求寬松些。Primary Orientation Flat- The longest flat found on the wafer.主定位邊

11、 -晶圓片上最長(zhǎng)的定位邊。Process Test Wafer- A wafer that can be used for processes as well asarea cleanliness.加工測(cè)試晶圓片-用于區(qū)域清潔過(guò)程中的晶圓片。Profilometer- A tool that is used for measuring surface topography.表面形貌劑 -一種用來(lái)測(cè)量晶圓片表面形貌的工具。Resistivity(Electrical)- The amount of difficultythat charged carriershave in moving thr

12、oughout material.電阻率（電學(xué)方面）-材料反抗或?qū)闺姾稍谄渲型ㄟ^(guò)的一種物理特性。Required - The minimum specifications needed by the customer when ordering wafers.必需 -訂購(gòu)晶圓片時(shí)客戶(hù)必須達(dá)到的最小規(guī)格。Roughness - The texture found on the surface of the wafer that is spaced very closely together.粗糙度 -晶圓片表面間隙很小的紋理。Saw Marks - Surface irregularities

13、鋸痕 -表面不規(guī)則。Scan Direction - In the flatness calculation, the direction of the subsites.掃描方向 -平整度測(cè)量中，局部平面的方向。Scanner Site Flatness-局部平整度掃描儀-Scratch - A mark that is found on the wafer surface.擦傷 -晶圓片表面的痕跡。Secondary Flat- A flatthatis smallerthan the primary orientationflat.3 / 7The position of this fl

14、at determines what type the wafer is, and also the orientation of the wafer.第二定位邊 -比主定位邊小的定位邊，它的位置決定了晶圓片的類(lèi)型和晶向。Shape -形狀 -Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)局部表面 -晶圓片前面上平行或垂直于主

15、定位邊方向的區(qū)域。Site Array- a neighboring set of sites局部表面系列 -一系列的相關(guān)局部表面。Site Flatness -局部平整 -Slip- A defectpatternof small ridgesfound on the surfaceof the wafer.劃傷 -晶圓片表面上的小皺造成的缺陷。Smudge- A defect or contamination found on the wafer caused by fingerprints.污跡 -晶圓片上指紋造成的缺陷或污染。Sori -Striation -Defects or co

16、ntaminations found in the shape of a helix.條痕 -螺紋上的缺陷或污染。Subsite,of a Site- An area found withinthe site,also rectangular.Thecenter of the subsite must be located within the original site.局部子表面 -局部表面內(nèi)的區(qū)域，也是矩形的。子站中心必須位于原始站點(diǎn)內(nèi)部。Surface Texture- Variations found on thereal surface of the waferthatdeviat

17、e from the reference surface.表面紋理 -晶圓片實(shí)際面與參考面的差異情況。Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.測(cè)試晶圓片 -用于生產(chǎn)中監(jiān)測(cè)和測(cè)試的晶圓片。Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.頂部硅膜厚

18、度 -頂部硅層表面和氧化層表面間的距離。4 / 7Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.頂部硅膜 -生產(chǎn)半導(dǎo)體電路的硅層，位于絕緣層頂部。Total Indicator Reading (TIR)- The smallest distance between planes onthe surface of the wafer.總計(jì)指示劑數(shù) (TIR) -晶圓片表面位面間的最短

19、距離。Virgin Test Wafer- A wafer that has not been used in manufacturing orother processes.原始測(cè)試晶圓片-還沒(méi)有用于生產(chǎn)或其他流程中的晶圓片。Void - The lack of any sortof bond (particularlya chemical bond) at thesite of bonding.無(wú)效 -在應(yīng)該綁定的地方?jīng)]有綁定（特別是化學(xué)綁定）。Waves- Curves and contours found on the surface of the wafer that can be

20、seen by the naked eye.波浪 -晶圓片表面通過(guò)肉眼能發(fā)現(xiàn)的彎曲和曲線。Waviness - Widely spaced imperfections on the surface of a wafer.波紋 -晶圓片表面經(jīng)常出現(xiàn)的缺陷。Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron th

21、an the semiconductor.受主 - 一種用來(lái)在半導(dǎo)體中形成空穴的元素，比如硼、銦和鎵。受主原子必須比半導(dǎo)體元素少一價(jià)電子Alignment Precision - Displacement of patterns that occurs during the photolithography process.套準(zhǔn)精度 -在光刻工藝中轉(zhuǎn)移圖形的精度。Anisotropic- A process of etching that has very little or noundercutting各向異性 -在蝕刻過(guò)程中，只做少量或不做側(cè)向凹刻。Area Contamination -

22、 Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.沾污區(qū)域 - 任何在晶圓片表面的外來(lái)粒子或物質(zhì)。由沾污、手印和水滴產(chǎn)生的污染。5 / 7Azimuth , in Ellipsometry - The angle measured between the plane of inciden

23、ce and the major axis of the ellipse.橢圓方位角 -測(cè)量入射面和主晶軸之間的角度。Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use 'back surface'.)背面 -晶圓片的底部表面。（注：不推薦該術(shù)語(yǔ)，建議使用" 背部表面 " ）Base SiliconLayer - The siliconwafer thatis locatedunderneath theinsulat

24、or layer, which supports the silicon film on top of the wafer.底部硅層 -在絕緣層下部的晶圓片，是頂部硅層的基礎(chǔ)。Bipolar- Transistors that are able to use both holes and electronsas charge carriers.雙極晶體管 -能夠采用空穴和電子傳導(dǎo)電荷的晶體管。Bonded Wafers - Two siliconwafers thathave been bonded togetherbysilicon dioxide, which acts as an ins

25、ulating layer.綁定晶圓片 -兩個(gè)晶圓片通過(guò)二氧化硅層結(jié)合到一起，作為絕緣層。Bonding Interface- The area where the bonding of two wafers occurs.綁定面 -兩個(gè)晶圓片結(jié)合的接觸區(qū)。Buried Layer - A path of low resistancefor a currentmoving in a device.Many of these dopants are antimony and arsenic.埋層 -為了電路電流流動(dòng)而形成的低電阻路徑，攙雜劑是銻和砷。Buried Oxide Layer (BOX

26、) - The layer that insulates between the two wafers.氧化埋層 (BOX) -在兩個(gè)晶圓片間的絕緣層。Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.載流子 -晶圓片中用來(lái)傳導(dǎo)電流的空穴或電子。Chemical-Mechanical Polish (CMP)- A process of flattening andpolishing w

27、afers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.化學(xué) - 機(jī)械拋光 (CMP) - 平整和拋光晶圓片的工藝，采用化學(xué)移除和機(jī)械拋光兩種方式。此工藝在前道工藝中使用。Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.卡盤(pán)痕跡 -在晶圓片任意表面發(fā)現(xiàn)的由機(jī)械手、卡盤(pán)或托盤(pán)造成的痕跡。6 / 7Cleavage Plane- A fracture plane that is preferred.解理面 -破裂面Crack - A mark found on a wafer thatis greaterthan 0.25 mmin length.裂紋 -長(zhǎng)度大于 0.25 毫米的晶圓片表面微痕。Crater - Visible under diffused illumination,