EBL基本組成及工作原理

1、20150202,ebl基本結(jié)構(gòu)與工作原理,ebl=electron beam lithography=電子束光刻,一、電子束曝光系統(tǒng)結(jié)構(gòu),column,電子源的分類,直熱式 w，2700k 熱發(fā)射電子源 旁熱式 lab6，1800k 電子源 熱場發(fā)射 zro/w，1800k 場發(fā)射電子源 冷場發(fā)射,四種電子源對比,電子源三個關(guān)鍵參數(shù)：有效源尺寸，亮度，電子能量分布 熱發(fā)射源能量分布大，聚焦斑束大，產(chǎn)生嚴重相差。 冷場致發(fā)射穩(wěn)定性差，對真空要求高。故ebl系統(tǒng)選用熱場致發(fā)射源,旁熱式&熱場致電子源結(jié)構(gòu)示意圖,陽,地,超高電場,陰,陰,陽,ebl中電子源結(jié)構(gòu)示意圖,幾個牌子的ebl性能參數(shù),二次

2、電子探測器,detector,illustrations with different signal sources,imaging by means of se2 detector: 5mm wd imaging by means of in lens detector: = 10mm wd (depending on high voltage setting) imaging by means of bse detector: 8-10 mm (optimum of the bs electron detection,influence of acceleration voltage,in

3、fluence of beam current,influence of working distance,二、坐標系的對準,建立坐標系,寫場對準,三、曝光,掃描模式,exposure parameter,area dose,line dose,dot does,area mode,line mode,circle mode,exposure strategies used by raith,四、臨近效應(yīng),visualization of energy deposition grid (edg,高能電子打斷pmma內(nèi)高分子鏈示意圖,前散射和背散射隨pmma厚度的變化關(guān)系,monte carlo simulations,energy deposition,proximity function,trajectories,energy deposition,energy distribution,double gaussian,proximity function,proximity function has the same shape as energy distribution with respect to lateral distances but: no direct relation between energy and pe! (its just a