認識Mask以及其制作流程

認識Mask以及其制作流程TheRoleofMaskinICIndustry

DESIGNMASKWAFERTESTINGASSEMBLYHowDoesMaskWorkinWaferFAB

-------StepperHowDoesMaskWorkinWaferFAB

-------ScannerRawMaterialofMask

BlankBIM(binarymask)PSM(phaseshiftmask)A、KRF-PSMB、ARF-PSMSizeofBlank

5inch90mil(5009)5inch180mil(5018)6inch120mil(6012)6inch250mil(6025)7inch250mil(7015)WhatkindofmaskSMICFABsuse?Blankponent

BinaryBlankPSMBlankPhotoResist(3K,4K,4650A)CrO&Chrome(~1050A,700A)QuartzPhotoResist(2K,3K,4KA)CrO&Chrome(1000,~550A)QuartzMoSiFilmPhotoResistOpaqueMetalFilmSubstratePhotoResistOpaqueMetalFilmPhaseShiftLayerSubstrateBlankQzCharacteristic

RigidityHeatExpansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSodalimeSilicon-BorideQuartzCoefficient9、43、70、5BlankQzCharacteristic

OpticsCharacterTransmission(%)200300400020406080100QuartzSilicon-BorideSodaLimeWaveLength(nm)That’swhywechooseQuartzasthesubstrateofblankHowtoTransferDesigntoMask?

WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1stInspectThr-InspectSTARlightShippingDevelopStripEtchFront-endProcess

BlankconfigurationPhoto-resistCrfilmQuartzExposurePhoto-resistdevelopWetetchPhoto-resiststripAEIASIRe-Etch?AEI:AfterEtchCDmeasureASI:AfterStripCDmeasureStep1Step2Step3Step4Step6Step5Step712大家應該也有點累了，稍作休息大家有疑問的，可以詢問和交流Front-endProcess

DryprocessResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure

(EB1,EB2,EB3

DUV,LB5,LB6)PEB(PostExposureBake)SFB2500,APB5500PAGAcidgenerationAciddiffusionDeprotectionreactionDevelopment

(SFD2500,ASP5500)H+DryEtch(Gen3,Gen4)

AEI,Re-etchStrip,ASIPellicleponent

PellicleMembraneMaterialWaveLengthN、C、365nm(I-line)C、E、365,248nm(I-line,DUV)F、C、193nm(ArF)Frame(AluminumAlloy)AdhesiveTapePellicleMembrane(2~5um)PellicleFrameDoubleSideAdhesiveTapeCrGlassWhatPellicleDo?

TopContaminantObjectPlanePellicleFilmBottomContaminantContaminantonPatternPlaneLenSystemUnfocusedTopContaminantImageUnfocusedBottomContaminantImageImagePlaneFocusedContaminantImageonWaferMaskPatternWaferSurfaceLightParticleImmunityControl

Particlesize(D)V、S、MinimumStand-off(T)T=(4M/N、A、)DM----MagnificationN、A、----NumericalApertureoftheLensForglasssideparticle,T=2、3mmD1T1T2D2MaskQualityControl

C、D、DefectRegistrationCD(criticaldimension)measurementDefectTypeOpaquespotParticleProtrusionIntrusionContaminationPinholeMissingARGlassfractureBreakGlassseedBridgeSolventspotHardDefectSoftDefectMissSizeHowtoDoMaskDefectInspect

MaskLayoutExemplification

Normal

++++FiducialTestKeyTestLineMainPatternScribeLineGlobalMarkQACellBarcodeMulti-Chip

++++FiducialTestKeyTestLineScribeLineGlobalMarkQACell++AChipBChipCChipDChip+ThePrinciple

ofSTARlightInspectTheModelinSMICMaskShop(SL3UV)canonlydetectpatternsideSTAR:SynchronousTrans、AndReflectedWhatisRegistration

RegistrationResultExemplification

Mask: 6”,