充放電電壓區(qū)間與熱處理對銅摻雜氧化錫奈米晶于鋰離子電池應(yīng)用之

#TheEffectsofDyeandCarbonNanotubesforDye-Sensitized

SolarCellChuen-ShiiChou1,Ru-YuanYang2,Min-HangWeng3,andChe-IHuang11DepartmentofMechanicalEngineering,NationalPingtungUniversityofScienceandTechnology,

Pingtung91201,Taiwan2DepartmentofMaterialsEngineering,NationalPingtungUniversityofScienceandTechnology,

Pingtung91201,Taiwan3NationalNanoDeviceLaboratory,Tainan74147,TaiwanAbstractThisstudydesignedandfabricatedasandwichTiO2thin-filmelectrodeforadye-sensitizedsolarcell.Thestudyinvestigatedtheeffectofdyeandcarbonnanotubesfordye-sensitizedsolarcell.Theexperimentstoincludepreparetheworkingelectrode,preparethecounterelectrode,assembletheDSSCandI-Vmeasurement.Preparetheworkingelectrodetoinclude(1)PreparetheTiO2colloid,ananocrystallineTiO2layerweresubsequentlyfabricatedinthatorderontheFTOsubstrateusingtheglasssticktechnique,thensinteringat45Ofor1hourinafurnace.(2)ImmersetheFTOsubstratewiththelayerofnanocrystallineTiO2intotheCuPc(CuC32N8H16)dyesolution(orN-719(C58H86O8N8S2Ru)dyesolution)for12hratroomtemperature.Furthermore,preparethecounterelectrodetoinclude(1)PreparetheCNTs/Aggluesolution.(2)ACNT/AggluelayerweresubsequentlyfabricatedinthatorderontheFTOsubstrateusingtheactoffallingindropstechnique,thensinteringat300℃for1hourinafurnace.Then,theworkingelectrodeandcounterelectrodearefittedandsealedtoassembletheDSSCandinjecttheelectrolyte(I-/I2)intothecell.Measuredtheshort-circuitphotocurrentandopen-circuitphotovoltageforhome-madeI-Vmeasurementsystem.Thecounterelectrodedon’ttoincreaseSWNTsofDSSCthatshort-circuitphotocurrentfrom10.7rA(immersetheTiO2layerintotheCuPcdyesolution)to99.3rA(immersetheTiO2layerintotheN-719dyesolution).TheimmersetheTiO2layerintotheN-719dyesolutionofworkingelectrodethatMWNTsmassofcounterelectrodefrom0.01gto0.03g,theshort-circuitphotocurrentofDSSCfrom349.7rAto416.5rA,whenMWNTsmassfixedtheshort-circuitphotocurrentofDSSCfrom266.4rA(counterelectrodetoincreaseSWNTsofDSSC)to416.5rA(counterelectrodetoincreaseMWNTsofDSSC)Keywords:TiO2,CuPc(CuC32N8H16),N-719(C58H86O8N8S2Ru),Carbonnanotubes,Ag/glue,MicronMechanofusion,GlassStickTechnique雷解寰系、院封色素增感型太隰雷池光雷斡操效之影^洪健原1邱哨漂1幀俊宏1姚品全21大大孽雷楂工程孽系

2大大孽材科孽瓷工程孽系

彰化舄々大村制山附112雕摘要本研究以循琪伏安法及交阻抗分析等優(yōu)化孽方法，探*寸色素增感型太鑄雷池(Dye-SensitizSOlarcell(DSSC＞，雷解笑系、院的特性，以及封DSSC?光雷醇換效之影鬻。研究中以KI和LiI稹究解算作?比^。交阻抗分析皓果糠示：匕仃的阻抗速大於KI，原因?Li+於PC(propylenecarbonate^^Jd之子便啊^低之故，同之霄解算子，封於DDSC光雷醇換效，有明糠之影鬻。I-V浪*吉果糠M，KI/I2/PC雷解算系、院之短雷，ISC=1.92mA、坪霄餐V0c=0.606V、醇換效n=0.56%、填充因子FF=0.48；改以LiI/12/PC雷解"系院，刖相同叮02工作雷趣之DSSC，其短雷ISC=1.55mA、坪霄餐VOC=0.262V、醇換效n=0.16%、填充因子FF=0.4。、粽合以上皓果，可知KI/I2/PC表琨速源於LiI/I2/PC，同醉，我陰可藉由阻抗分析，解同貿(mào)程 封DSSC光雷醇換效之影鬻。一般而言，阻抗越大，短霄更填充因子，育靖之燮小，使得醇換效〃燮差，因此是一稹優(yōu)化孽光霄研究的器。%筵韶：循琪伏安法，交阻抗分析，色素增感型太鑄雷池TheInfluenceofRedoxCouplesonPhotoelectrochemical

Efficiency—AnImpedanceAnalysisofDye-sensitizedSolarCellsJan-WranHrong1,Peng-JieChiu1,Jiun-HungChen1,andPin-ChuanYao21DepartmentofElectricalEngineering,DaYehUniversity,

2DepartmentofMaterialsScienceandEngineering,DaYehUniversity

No.112,ShanjiaoRd.,Dacun,Changhua51591,TaiwanAbstractInthisstudy,cyclicvoltammetryandelectrochemicalimpedancewereusedtoevaluatethechargetransportcharacterbetweentheredoxcouples(mediator)andcounterelectrodeaswellastheinfluenceofdifferentalkalineions,Li+andK+,respectivelyonthephotoelectricconversionefficiencyofdye-sensitizedsolarcell(DSSC).Theresultsshowedthatowingtothesmallerionsmobilityandmass-transportrateofLi+ascomparedtoK+,theimpedancesofLI/I2/PCwerefarlargethanthoseinKI/I2/PCunderidenticalconditions.TheI-VcharacteristiccurvesunderilluminationfortheDSSCwithKI/I2/PCwereV0C=0.606volt,ISC=1.92mA,FF=0.48and=0.56%whilethoseforKI/I2/PCfabricatedandtestedunderidenticalconditionswereV0C=0.262volt,ISC=1.55mA,FF=0.4and=0.16%.Asaconclusion,theperformanceoftheredoxsystem,KI/I2/PCwasmorebetterthanthatofLI/I2/PC.Theresultswereinaccordancewiththoseobtainedfromimpedanceanalysisandwerefurtherprovedbycyclicvoltammetry.Consequently,itisoneofthemostpowerfultoolsforelectrochemicalstudyandbeadoptedas.Keywords:Cyclicvoltammogram,electrochemicalimpedance,Dye-SensitizedSolarcell雷、/鼓作米攀、^之道展：雷趣收集器研究蔡子祺何信法^慎修

南臺科技大孽雷子工程系

臺南舄々永康市南臺街雕摘要在以便、院霄華(Electrospinning)方法貿(mào)作米^^靖，^^收集器上建常出瑯希望得到的均§的珠"/(beads)缸第，及均§直任的箱、與年。本研究以新的貿(mào)作方式，在介期基板上放置筷^晶片做^收集器，史改建其中的雷垛，^察其影鬻。共置藤三稹漢，(一)在筷^晶片上施予DC直600V的霄餐，然移將之灣的距作1~20mm的燮薩；(二)在固定的2cm距下，施予DC100V~600V的霄餐；(三)施予AC110V~AC140V霄餐；^察水口霄助肘箱、與包分布的單鬧以及觸缸警隼的影鬻。置藤皓果瑟琨改建 演^齡霄趣之灣的距，即能判大大的改善米＞＞的均|性和增追觸、*徒密 ；而在直雷餐置膝中，因有^大的霄餐改建甜鬧，使貿(mào)作出的米＞＞直位可小於300nm，在交 霄餐置膝中，羥生 直任^傅、院方法觸、徐、分布希鬧^^且密集的米＞＞°此雷趣收集器方式藉著、^端霄堤的改建，很明糠的提昇^^的品第，史上加快生^的速 。%筵韶：霄華、米^^、薄膜、收集器、水口雷堤ProgressinElectrospinningofNanofiber:

TwoCollectorResearchTsuChiTsai,andShinFaHo,MaxChungDepartmentofElectricalEngineering,SouthernTaiwanUniversity,Tainan,TaiwanAbstractElectrospinningcanmakenanofiberseasily,however,thereoftenexistundesiredbeadsatthefiberconnections,andthediameteranddistributionoffibersarenotuniform,Wereporthereanewtypeofcollectorcomposedoftwocopperstripesascollectorandplacedontopofadielectricsubstrate.Threecasesarestudies:1)A600VDCvoltageappliedonbothofthestripecollector,andthedistancebetweenthemisvariedfrom1to20mmtoexperimenttheeffectoflocalelectricfield；2)Atfixed2cmdistance,aDCvoltagebetween0-600Visappliedononeoftheelectrode;3)AnAC100-140Vvoltageisappliedbetweenthetwoelectrodes.Resultsshowsbychangingthedistancebetweentheelectrodes,theelectrospunnanofibersqualityareimprovedbothindiameteruniformityanddensity.InDCexperiment,fiberswithdiameterlessthan300nmcanbeproducedduetohighvoltage.InACexperiment,thedistributionareaiswider,andfibersaredenser.Byplacingthetwoelectrodesascollector,nanofiberqualityarevastlyimprovedandproductionrateincreased.Keywords:electrospinning,nanofiber,collector水熟法鼓得氧化金辛米勰的結(jié)塔望特性研究甯1,2白世南11建固科技大孽雷子工程系暨研究所

彰化市介春1雕2建固科技大孽自薩化工程系暨楂雷光系、院研究所

彰化市介春1雕摘要本研究用水熱法，在低溫（95。0的璞境下，成功的貿(mào)得出高密的氧化肄米版電於^氧化肄晶稹嘴的玻璃基板。藉由SEM的浪J，糠示出水溶液濾封米版的成員具有糠著的影鬻，常溶液的濾增加睥，米版的直任也域之增大。此外，建由乂光、輾射置藤，公瑯氧化肄米版具有垂直於基板的2軸修遑取向；同靖，水溶液濾>0.15M靖，米版具有最佳的皓晶特性。%筵留：水熱法，氧化肄，米版電，皓隼特性SynthesisofZnONanowireArraysonGlassSubstratebyLow

TemperatureHydrothermalMethodKuan-LungJuan1,2andShr-NanBai11DepartmentofElectronicEngineering&口InstituteofElectronic,ChienkuoTechnology

University,Changhua500,Taiwan,ROC2DepartmentofAutomationEngineering&InstituteofMechatronopticSystems,Chienkuo

TechnologyUniversity,Changhua500,Taiwan,ROCAbstractZnOnanowirearrayshavebeensuccessfullysynthesizedonglasssubstratebyhydrothermalmethodat95℃.TheSEMimagesoftheas-grownZnOnanowiresdemonstratedthatdiameterofthenanowiresincreaseswithincreasingtheconcentrationofthesolution.TheX-raymeasurementsshowntheZnOnanowireswithexcellentpreferred(002)reflection,suggestingthenanowireshavec-axis-preferredorientationperpendiculartothesubstratesurfaceBesides,thenanowireshavebestcrystallinemicrostructureatthesolutionconcentration0.15M.Keywords:hydrothermalmethod,ZnO,nanowirearrays,structuralproperties硝酸金辛水合物濾封熱液合成法所成裝之

氧化金辛米柱微結(jié)塔特性之影^舒罄富1世濾2英1,2漠英2江罄1幀民意1

1中州技淅孽院霄子工程系

彰化^1^山附3段2 6鼠2大大孽雷楂工程系

彰化舄々大村制山附 112雕摘要在本研究中，氧化肄米柱是使用硝酸肄水合物(zincnitratehexahydrate)及四氮甲圜(methenamine)在矽基板上以大雨85°C沮尬小、靖合成的。。硝酸肄水合物和四氮甲圜的濾*1：1。硝酸肄水合物的艘稹濾分叼*0.01M、0.025M、0.05M、0.1M、0.2M和0.4M。由能^童田口5)^察分析得知，此米柱的.他成成分*肄及氧。肄原子封氧原子的演比的?1：4。在2口0米柱的X光、輾射圜像中，、輾射角位於20=31.77。，34.42。,and36.25。有明糠的特徵峰出琨，明ZnO米柱是角形觸肄碉皓隼的(100)、(002)和(101)三伸皓晶面。彳仔瞄式雷子糠微^的影像中可以得知，米柱尺寸(口均直位及E)育靖著硝酸肄濾的增加而增加。工'均直任育彳笠410nm增加到3.9pm，豆上，所成員的米柱的密也域育之增加。此外，靖著科，酸肄濾的同，伸叼米柱的外形更覆集的形也育隼相同。%筵留：氧化肄米柱、硝酸肄水合物濾、氧化肄米柱尺寸TheInfluenceofZincNitrateHexahydrateConcentrationon

theMicrostructuralPropertiesofZnONanorodsGrownby

HydrothermalSynthesisJung-FuHsu1,Shih-FongLee2,Li-YingLee1,2,Han-YingLiu2,Jung-Lungching1,and

Ming-ChungChien11DepartmentofElectronicEngineering,ChungChouInstituteofTechnology

No.6,Lane2,Section3,ShanjiaoRoad,Yuanlin,Changhua510,Taiwan

2DepartmentofElectricalEngineering,DayehUniversity

112,Shan-JiauRoad,Dacun,Changhua51591,TaiwanAbstractInthiswork,ZnOnanorodsweresynthesizedonthesiliconsubstratesinasolutionofzincnitratehexahydrateandmethenamineat~85℃for2hours.Theconcentrationratioofzincnitratehexahydratetomethenamineis1:1.Theconcentrationsofzincnitratehexahydrateare0.01M,0.025M,0.05M,0.1M,0.2M,and0.4M,respectively.ItisobservedfromEDSspectroscopyanalysisthatthenanorodsarecomposedofzincandoxygen.Theatomicratioforzinctooxygeniscloseto1:4.TheXRDpatternofZnOnanorodsat20=31.77。，34.42。，and36.25。indicatesthreereflectionpeaksofhexagonalwurtzitestructure,(100),(002),and(101),respectively.IthasbeenshownthattheZnOnanorodsareofsinglehexagonalphaseofwurtzitestructure.Moreover，SEMimagesrevealthatthesize(includingaveragediameterandlength)ofnanorodsincreaseswithincreasingzincnitratehexahydrateconcentration.Theaveragediameterincreasesfrom~410nmto~3.9pm.ThesurfacedensityofZnOnanorodsalsoincreasewithincreasingzincnitratehexahydrateconcentration.Furthermore，theappearanceofindividualnanorodsandtheformationofclustersvariedwiththeconcentrationofzincnitratehexahydrateaswell.Keywords:ZnOnanorods，zincnitratehexahydrateconcentration，sizeofZnOnanorods以雷化學(xué)沉稹鼓得米氧化去鑄勰特性翼微結(jié)將研究克邦1克廷1喬臣翔1莪育鴦2弘彬11大大孽雷楂工程孽系

2大大孽生物羥棠科技孽系

51591彰化賒大村邦山附112雕摘要本研究用雷解稹方式，探用99.999%之％且箔”“函，白?管趣，作鑄趣氧化尬，膜得鑄趣氧化場呂模板，將所得到的鑄趣氧化場呂模板用恒霄位童以也霄方式追究^，合成氧化立^版。建埃套射捕描式雷子糠微^^察得直任75nm，模厚25〃m之鑄趣氧化場呂模板，以雷解沉稹貿(mào)得米氧化^^版直任75nm，孔的灣距^112nm及E6〃m，具高深甯比(1:80)高密且均二性佳。由X光、輾射分析童在氧化^^^液pH9值主、輾射峰(200)，pH13位主、輾射峰(111)。建穿透式雷子糠微^^察表面型魅之微^皓隼，其*一、*年多晶方皓隼米氧化^^版。%筵韶：霄解稹、鑄趣氧化^模板、米氧化立^版TheMicrostructureandPropertyofCu2O-Nanowire

FabricatedbyElectrodepositionYan-TingLin1,Yan-BangLiu1,Chen-ShiangShiu1,Yu-TengChang2,andHung-BinLee1DepartmentofElectricalEngineering,Da-YehUniversityDepartmentandGraduateProgramofBioIndustryTechnologyDa-YehUniversity

No.112,ShanjiaoRd.,Dacun,Changhua,Taiwan51591,R.O.C.AbstractInthisstudy,copperdioxidenano-wireswerepreparedbygalvanostaticelectroplatingwithintheporesofananodicaluminumoxide(AAO)template.Theanodicaluminumoxidewithuniformdiameterof75nmwasobtainedfrom25^mof99.999%aluminumfoilbytwostepsanodization.Thehighaspectratioofcopperdioxidewireswerecharacterizedfieldemissionscanningelectronmicroscopy(FESEM).TheXRDandTEMresultsprovethatonedimensionalofpolycrystallinenano-scalecopperdioxidewirecanbesuccessfullysynthesizedbyanodicaluminumoxidetemplate.Keywords:electrodeposition,anodicaluminumoxide,copperdioxidenano-wires用隰趣氧化金呂模板鼓得^ 米勰電廷1克邦1喬臣翔1莪育鴦2弘彬11大大孽雷楂工程孽系

2大大孽生物羥棠科技孽系

51591彰化賒大村邦山附112雕摘要以優(yōu)化孽沉稹方法貿(mào)得高深甯比之^米版，藉由鑄趣氧化場后模板以氏衡雷解沉稹^米版。此技彳檸可有序排，使4齡完全填入於鑄趣氧化^模板中。建埃套射雷子糠微^糠示氏衡雷解沉稹貿(mào)得^米版直任78nm、E5〃m，具高深甯比(1:65)高密且均考性佳。建震薩悌品磁童磁性浪〕，其沮M300K，垂直底材方向(H±)施加磁冊，其篇旗磁(coercivity(Hc))>642.07Oe，角形比(squareness;(Mr/Ms))>0.5，水工'底材方向(H//)施加磁助，其福旗磁三129.07Oe，角形比(squareness;(Mr/Ms)庫0.064。%筵韶：鑄趣氧化場呂模板、氏衡雷解沉稹、^米版ThePropertyofNickelNanowireArraysElectrodeposited

FromAnodicAluminumOxideTemplateYan-TingLin1,Yan-BangLiu1,Chen-ShiangShiu1,Yu-TengChang2,andHung-BinLee1DepartmentofElectricalEngineering,Da-YehUniversityDepartmentandGraduateProgramofBioIndustryTechnologyDa-YehUniversity

No.112,ShanjiaoRd.,Dacun,Changhua,Taiwan51591,R.O.C.AbstractHighordernickelnanowirearraysweresynthesizedbypulseelectrodepositionintotheporesofanodicaluminumoxidetemplate.Theresultoffieldemissionscanningelectronmicroscopyshowsthatuniformnickelnanowirewithdiameterof78nm,lengthof5^m.Themagneticpropertywascharacterizedbyvibratingsamplemagnetometer.Thecoercivityis642Oeandthesquarnessis0.5whentheappliedmagneticfieldisperpendiculartotheaxisofnickelnanowirearrays.However,thecoercivityis1209Oeandthesquarenessis0.064whentheappliedfieldisparalleltotheaxisofnickelnanowirearrays.Keywords:anodicaluminumoxide,pulseelectrodeposition,nickelnanowire以曷^^析出矽米勰之成裝楂制洪遺仁1忠信2英1擘威君1世濾11大大孽雷楂工程孽系

彰化舄々大村制山附112雕

2建固科技大孽雷子工程系

彰化市介春1雕摘要本研究在(100)矽基板上蒸^一嘴10nm^薄膜，在高濕汛下^^必原子之析出，以成E矽米版。本研究改建成E沮及氰萊以研究必米版之成毛楂制。置藤糠示，在950℃以上特，矽米版的表面密育靖著成員沮的升高而建大，但在900°C以下補完全 育成毛。此外，矽米版的表面密也因增大氰萊特逵到最大值。矽 米版的成名可以分*候步，郢。首先，在高溫汛下，原本在矽基板之中的矽原子柒卑由共融而追入^核之中，形成2512合球。然而，2512臺球表面?zhèn)涫艿角枞R薩蒂走熱而 低溫，遇的和的必原子 1^NiSi2合球析出而成名矽米版。比2512合共融沮高的成名泡是成名必米版的必要筷件。而氰萊薩的功能刖是低收512臺表面的沮，史因而^^必的析出。%筵韶：矽米版，隅媒，矽-^合TheGrowthMechanismofMetal-Induced-Precipitationof

SiliconNanowiresWei-JenHung1,Chun-ShinYeh2,Li-YingLee1,Wei-ChunLai1,andShih-FongLee11DepartmentofElectricalEngineering,DayehUniversityNo.112,ShanjiaoRd.,Dacun,Changhua,Taiwan51591,R.O.C.2DepartmentofElectronicsEngineering,ChienkuoTechnologyUniversityNo.1,ChiehShouN.Rd.,ChanghuaCity,Taiwan,R.O.C.AbstractInthiswork,alayerofnickelwasevaporatedontoa(110)siliconsubstratetoinducetheprecipitationofsiliconathightemperaturesinordertogrowsiliconnanowires.Boththegrowthtemperatureandtheflowrateofargonwerevariedtostudythegrowthmechanismofsiliconnanowires.Itwasfoundthatthesurfacedensityofsiliconnanowiresincreaseswithincreasingtemperatureabove950°C,andnogrowthwasfoundfortemperaturebelow900°C.Inaddition,thesurfacedensityofsiliconnanowiresincreaseswithincreasingargonflowrateaswell.Thegrowthofsiliconnanowirescanbedividedintotwosteps.SiliconatomsoriginallyresidinginthesubstratearecombinedwithNinucleithrougheutecticreactiontoformNiSi2alloyballsonthesubstrate.BecauseoftherelativelylowtemperatureonthetopsurfaceofNiSi2alloyballs,thesesiliconatomsfurtherprecipitatetoformsiliconnanowires.GrowthtemperaturehigherthantheeutectictemperatureofNiSi2alloyisrequiredforthegrowthofsiliconnanowires.ThepurposeofargonflowistolowerthesurfacetemperatureofNiSi2alloyballsandthustoinduceprecipitationofsilicon.Keywords:siliconnanowires,metal-inducedprecipitation,Si-Nialloy

矽薄膜米通道在交阻抗藉的雷特性曾明春1,3王固棉1,2余敏昌11圃中英大孽楂械工程孽系402辜中市南餐圃光250雕2畫中英大402辜中市2畫中英大402辜中市孽生爐研究所南餐畫光250雕3中州技淅孽院霄子工程系510彰化賒晟^山附3段2巷6雕摘要本研究除有^低成本貿(mào)得矽米孔有效的方法，透遇使用連稹常用的潟短刻法的技淅在矽和米阻抗導(dǎo)普的浪J建米孔在連研究遇程中被延展。研究方法的主要概是以演喈段短刻遇程，包括首先要簫面潟短刻法和追吼米然的短刻通道。以特叼貿(mào)作布具在簞短刻的矽晶片，因此短刻就薩可以被有效地追。尚未短刻穿的米通道以優(yōu)化孽系、院^^，一旦短刻孔被短刻穿透靖的子搦散遇程。本文研究優(yōu)化孽阻抗藉(EIS)在非^^的米通道琨象。置藤皓果以本研究方法能以有效成本貿(mào)得矽米孔，史使用交 阻抗亨普估浪〕必米通道的雷阻。%筵留：米孔貿(mào)得，潟短刻法，班0短刻，優(yōu)化孽阻抗導(dǎo)普AnElectricPropertyinImpedanceSpectroscopyonSilicon

MembraneNanochannelMing-ChunChien1,3,Gou-JenWang1,2,andMing-ChangYu11DepartmentofMechanicalEngineering,NationalChung-HsingUniversity,Taiwan

2InstituteofBiomedicalEngineering,NationalChung-HsingUniversity,Taiwan

3DepartmentofElectronicEngineeringChungChouInstituteofTechnology,Yuan-lin510,TaiwanAbstractThispaperreportsonacosteffectivelymethodtofabricatenanoporesinsiliconbyonlyusingtheconventionalwet-etchingtechniqueandthemeasurementofananochannelimpedancespectroscopyaredevelopedinthisresearch.Themainconceptoftheproposedmethodisatwo-procedureetchingprocess,includingapremierdouble-sidedwetetchingandasucceedingtrack-etching.Aspecialfixtureisdesignedtoholdthepre-etchedsiliconwaferinsideitsuchthatthetrack-etchingcanbeeffectivelycarriedout.Anelectrochemicalsystemisemployedtodetectandrecordtheiondiffusioncurrentoncethepre-etchedcavitiesareetchedintoathroughnanopore.Electrochemicalimpedancespectroscopy(EIS)measurementsweremadeonasymmetricnanochannel.Experimentalresultsindicatethattheproposedmethodcancosteffectivelyfabricatenanoporesinsilicon.AthroughporeusingEIStoestimatecircuitimpedancecanbedeterminate.Keywords:nanoporefabrication,wetetching,tracketching,electrochemicalimpedancespectroscopy氧化金辛鼓作多孔矽皓將光掠浪〕器之研究聿嘮斌莪著豪重旻原洪昌佑

建固科技大孽雷楂工程系

彰化市介春1雕摘要本文主旨是以氧化肄貿(mào)得多孔必光榆浪〕器，探W寸多孔矽的：雷密 、富氟酸田尸)濾及鮑刻反廛靖灣等，封多孔矽特性的影鬻，以及使用溶繆-凝繆法(501吆?1)填襯多孔矽孔

貿(mào)得多孔必光檢浪〕器的影鬻。填襯多孔必孔皓隼光/暗雷比*2635(—4.48x10-3/—1.7x

10-6)倍，未填襯多孔必皓X之光/暗雷 比雨?122(-1.07x10-3/-8.77x10-6)倍， 者相差的22倍，在-5V偏餐下，光鬻廛之峰值分叼*770nm(0.25A/W)翼800nm(0.14A/W)，子效的40%更21%。%筵韶：多孔矽，氧化肄，光檢浪〕器，溶繆一凝繆法FabricationandStudyoftheZnOonporoussiliconfor

photodetectorSheng-BinHuang,Shu-HaoChang,Min-YuanWu,andChang-YouHungDepartmentofElectricalEngineering,ChienKuoTechnologyUniversity

No.1,JieshouNRd.,Changhua,Taiwan50094,R.O.C.AbstractTheobjectsofthispaperfocusonthefabricationandStudyoftheZnOonporoussiliconforphotodetector,treatsparameterwithporoussilicon：currentdensity,HFconcentrationandetchtimeeffectforporous.Fabricationofphotodetectorbysol-geltofilleffectinporoussilicon.Tofillinporoussiliconbysol-gel,photo-to-darkcurrentratiobe2635(-4.48x10-3/-1.7x10-6),anotherphoto-to-darkcurrentratiobe122(-1.07x10-3/-8.77x10-6),themtodiffer10-time.Atabiasof-5V,photo-responsiveforwere770nm(0.25A/W)and800nm(0.14A/W),quantumefficiencyabout40%and21%.Keywords:poroussilicon,ZnO,photodetector,sol-gelmethodMBEGrowthandPhotoluminescenceStudyofGaSb

QuantumDotsonGaAsSubstrateM.-C.Lo(明城)，M.-F.Tsai,S.-D.Lin,andC.-P.LeeDepartmentofElectricalEngineering,NationalChiaoTungUniversity,Hsin-Chu,TaiwanAbstractAntimonitecompoundshavealwaysbeenattractiveforresearchersinterestedinbandengineeringandnoveldeviceapplications.Heterostructuresinvolvingsuchmaterialsystemoftendisplayinterestingbandalignmentthatisrarelyseeninothermaterials.TypeIIandtypeIIIheterojunctionsarepossiblebycombinationsofdifferentkindsofantimonitecompounds.Recentadvancesinepitaxialgrowthhaveenabledustogrowselfassembledquantumstructureswithenhancedopticalproperties.SelfassembledquantumdotsofGaSbinGaAsmatrixprovideaninterestingtypeIIsystemwithquantumconfinement.ItgivesusanopportunitytolookatopticaltransitionpropertiesofspatiallyseparatedelectronsandholesduetoquantumconfinementinthistypeIIsystem.QDsshapeandPLresultswithdifferentgrowthconditionsareshownintable1.ThereareInthiswork,GaSbquantumdotsweregrownbyasolidsourcemolecularbeamepitaxy(MBE)systemon(001)GaAssubstrates,withvalvedcrackersourcesforSbandAs.Self-assembledGaSbQDsweregrownintheStranski-Krastanow(SK)growthmode.Thesamplesweresandwichedbya150nmGaAsbufferlayeranda150nmGaAscappinglayer.Afterthecappinglayergrowth,wegrewQDswiththesameconditionsonthesamplesurfaceforAFMimage.InordertoavoidintermixingofSbandAs,As4wasusedinsteadofAs2foroursamplegrowth.QDsshapeandPLresultswithdifferentgrowthconditionsareshownintable1.Thereareo oabout8%latticeconstantmismatchbetweenGaSb(6.095A)andGaAs(5.65A).Intable1,wecanseethatwhentheGaSblayerhasmorethan2-mono-layers,theQDsstarttoform.ThecriticalthicknessforQDformationisbetweenoneandtwomono-layers.ThisissimilartotheInAsQDformation,wherethetypicalcriticalthicknessisabout1.7ML.ThegrowthtemperaturedependenceofthedotsizeanddensityisalsosimilartothatofInAsQDgrowth.Figure1showsthesurfaceAFMimageofGaSbQDsofsample4.Theshapeofthedotscanbecontrolledbythegrowthcondition.Wehavebeenabletogrowroundeddots,ellipticaldotsandringshapedstructurescontrollably.TheopticalpropertiesofGaSb/GaAsQDsandtheirwettinglayerswerestudiedbyphotoluminescence.Figure2showsatypicalPLspectrumoftheGaSbQDsample,thepeaknear1.2eVisduetothewettinglayerandthepeaknear1.0eVisduetotheQDs.ThedependenceofthePLspectrumonpumpingpowerhasalsobeenstudies.Wefoundthatbothemissionpeaks(fromthewettinglayerandfromtheQDs)shifttohigherenergiesastheexcitationpowerisincreased.Figure3showsthespectraofthewettinglayerwithdifferentpumpingpowers.Thereisan11meVblueshiftastheexcitationpowerisincreasedfrom200rWto10mW.ThisblueshiftphenomenoncanbeexplainedbythechangeintheelectronenergylevelsinGaAssurroundingGaSb.Whenthepumpingpowerisincreased,theamountofelectronsaccumulatedattheGaSb/GaAsinterfaceincreases.Asaresult,theamountofbandbendinginGaAsincreasesbecauseoftheincreasedspacecharge.Thereforetheelectronenergylevelsshiftupwardsresultingablueshiftintheemissionpeak.Inconclusion,wehavestudiedthegrowthofGaSbquantumdotsandtheiropticalproperties.DespitethetypeIIbandalignment,stronglightemissionwasobservedbothfromtheQDsandthewettinglayer.Keywords:Thenanofeaturesofopticalandelectricalpropertiesin

multiplequantumwellsJ.-C.Fan（范察犍）DepartmentofElectricalEngineering,Da-YehUniversity,Chang-Hua51591,TaiwanAbstractWereportthatthequasiboundstatesattheabove-barrierregioninAlGaAs-GaAssuperlatticescanbeclearlyobservedatroomtemperaturebyphotoconductivityaswellasphotoreflectancemeasurements.Weprovideconcreteevidencetoconfirmthatfree-carrierconfinementatbarrierlayerdoesexist.Itisalsofoundthatthebarrier-widthdependenceoftheabove-barriertransitionenergiescanbedescribedquitewellbythemodifiedMessiah’scalculation.However,thesimplecalculationusingtheconstructiveinterferenceconditioncanonlyexplainthetransitionsatlowerenergies,andfailswithincreasingtransitionenergy.Keywords:photoconductivity,photoreflectance,quantumwells,III-VsemiconductorP型CuAlO2透明醇雷薄膜厚封米結(jié)晶＞

望光雷特性之影^柏亨1卓文浩1幀志勇2三我2幀至信1＜健男1潘淳昌11用凰法人畫家學(xué)雕研究院童器科技研究中心新竹市科孽圃餐研套 20雕2中山科孽研究院航空研究所

臺中卦政90008附11雕之3信箱摘要本置藤用時填磁控反廛性濾^方式在石英基板上，固定辜萊/氧萊 比*2:1及舒整基板沮海400℃^件下，成^P型CuAlO2透明醇霄薄膜，其中舒整薄膜厚分叼*4000、2000、1000、500翼300A，探*寸CuAlO2透明醇霄薄膜其厚封於光雷特性、皓晶尺寸瓷米皓晶^之影鬻。置藤皓果糠示，靖著薄膜厚由4000%瀘少*300A睥，其400nm~700nm可光波毛料鬧口均穿透由66%增加*80%，薄膜雷阻在厚*300%特呈琨最低值6.12Q-cm，X光、輾射分析中糠示其厚*4000A翼2000A靖(102)皓晶取向，在厚小於1000A特史熊出瑯CuAlO2薄膜的、輾射峰。穿透式雷子糠微^分析糠示薄膜厚*4000A靖，薄膜呈瑯柱晶皓隼，其中包含著、箍小晶 ，常厚*300A靖，其糠微皓隼呈琪由、箍小晶.他成一、費性薄膜，夢封、球膜嘴連速傅醇換分析，可得知^餐具有米皓晶皓隼。%筵留：＞^氧化物薄膜，P型透明醇霄薄膜、濾^TheEffectsofOptical,ElectricalandNanocrystalline

PropertiesofP-typeCuAlO2FilmsUsingSputteringBo-HengLiou1,Wen-HaoCho1,Chih-YungChen2,San-WoLin2,Jyh-ShinChen1,

Chien-NanHsiao1,andHan-ChangPan11InstrumentTechnologyResearchCenter,NationalAppliedResearchLaboratoriesHsinchu300,Taiwan2AeronauticalSystemsResearchDivision,Chung-ShanInstituteofScience&TechnologyTaichung400,TaiwanAbstractP-typeCuAlO2thinfilmswerepreparedbyreactivesputteringonquartzsubstratesusingmetallicCuandAltargetwithaAr/O2flowrateof2:1.Thethicknessdependenceofelectrical,opticalandnanocrystallinepropertiesofCuAlO2thinfilmswereinvestigated.Itwasobservedthatwithadecreaseinfilmthickness,thetransmittanceandresistivitywereincrease.Theaveragedvisibletransmittance(400nm~700nm)ofa300A-thickfilmis80%.Thelowestresistivityobtainedinthisstudywas6.12Q-cmforthefilmsdepositedatasubstratetemperatureof400℃.o oThe4000Aand2000A-thickCuAlO2filmswaspolycrystallinestructureswitha(102)preferredorientation.ThethinnerthicknessofCuAlOfilmsshowedpoorcrystalline.TEMmicrostructural2studiessuggestedthe4000A-thickfilmsexhibitedacolumnarstructuresconsistingofveryfinegrains.The300A-thickfilmsconsistsofsphericalgrainswith~15nmindiameterscatteredoverthesurfaceofthesubstrates.ByfastFouriertransformanalysis,the300A-thickfilmsbehavednanocrystallinestructures.Keywords:CuAlO2,P-typetransparentconductiveoxide,sputtering用熱氧化方法所^^的三氧化二斜氧化物其成裝演道的遇程要雷亞特性之分析要探^聿琪聰1^乙能2王嘉安3明3幀孟吟3柯濾禧1*1南岸技淅孽院音耘工程孽系2南岸技淅孽院祉科技暨服蔣管研究所

3南岸技淅孽院霞子工程孽系

南投^草屯＜中正568雕摘要本研究用熱氧化方式以同泡成員米然的三氧化二欷薄膜，旨在探*寸薄膜的同深下各原子濾的分體魅以及其化孽筵皓的.他成。另一方面意在壽或薄膜成毛厚及優(yōu)容和崩滬霄餐翼沮相互％除的各稹物性節(jié)，再定羲出最佳的混成員楂制，以作^貿(mào)造高介優(yōu)材節(jié)之各^ 、筷件的依摞。由置藤皓果透遇穿透式雷子糠微^及X-射版光雷子博#^之浪J，瑟琪蒸^10米厚的欷 晶薄膜於矽晶同表面上，以600°C的氧化溫氧化10分^^仍殘鐵2米的欷齡，直到900°C靖才將欷齡完全氧化。所成員的美本，藉由光孽分析童浪〕得到於同的氧化泡筷件下，其能隙亦有所差 ，氧化溫增高能隙相封增高，由600°C至1000°C的氧化悌本可瑟琪其能隙由4.65eV逐漸增加至7.04eV。此足以瞪明氧化沮愈高，氧化物儲瀛特性愈佳。再刖，以雷一霄餐特性的涮又可得到氧化物薄膜的沔雷靖著氧化沮的升高而逐浙瀘小，1偏＜於-1V靖，沔霄由10-6A/cm2瀘小至10-10A/cm2，崩沖優(yōu)餐由6.5V提升至12.1V。%筵留：三氧化二欷，熱氧化，能隙，沔霄，崩涉霄餐GrowthEvolutionandElectricalCharacteristicsofGd2O3

fromDepositedGdMetalduringThermalOxidationC.T.Huang1,YiNengSun2,Chia-AnWang3,Mang-liangLee3,M.Y.Chen3,andH.H.Ko1*1DepartmentofComputerScience&InformationEngineeringNanKaiInstituteofTechnology.2DepartmentoftheGraduateSchoolofGeronticTechnology&ServiceManagement,NanKaiInstituteofTechnology.3DepartmentofElectronicEngineeringNanKaiInstituteofTechnology.

TsaoTun,542,NanTouCounty,Taiwan,R.O.C.AbstractBothchemicalcompositionsandphysicalpropertiesofGd2O3fabricatedinthermalprocesswithdifferentgrowthtemperaturearestudied.Theas-deposited10nm-thickGdmetalfilmwasnotoxidizedcompletelyat600°C,whileitcanbeoxidizedcompletelyat900°C.X-rayphotoemissionspectra(XPS)demonstratedthattheoxidationnumberincreaseswithahighergrowthtemperature.Accordingtothemeasurementofn&kanalyzer,theopticalenergybandgapisfoundtoincreasefrom4.65eVfor600°Csampleto7.04eVfor1000°Csample.Finally,leakagecurrentdecreasesfrom10-6A/cm2to10-10A/cm2at-1Vbias,andbreakdownvoltageincreasesfrom6.5to12.1Voltsatthegrowthtemperatureincreasingfrom600°Cto900°C.Thehigh-kdielectricbehaviorofGd-oxideisbetterforhighergrowthtemperature.Keywords:Gd2O3,thermalprocess,bandgap,leakagecurrent,breakdownvoltage射垠磁控濾虢毀得PET/ITO/WO3

可攜式雷致色燮元件之研鼓＜俊1鑄明2駐第1邱敬富1

1畫虎尾科技大孽光霄翼材科技研究所

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