硅片平整度知識(shí)介紹課件

硅片平整度知識(shí)討論IQC2006-4-20硅片平整度知識(shí)討論主要內(nèi)容如下：1、硅片平整度定義；2、硅片平整度測(cè)量；3、硅片平整度規(guī)范4、硅片使用中異常舉例平整度SEMI標(biāo)準(zhǔn)關(guān)鍵字注釋習(xí)慣用語SEMI標(biāo)準(zhǔn)用語新SEMI標(biāo)準(zhǔn)關(guān)鍵字注釋TTVGBIRGlobalflatnessbackidealrangeTIRGFLRGlobalflatnessfrontleast-squaresrangeSTIRSFQRSiteflatnessfrontleast-squaresrangeLTVSBIRSiteflatnessbackidealrangeFPDGFLDGF3DGlobalflatnessfrontleast-squaresdeviationGlobalflatnessfront3pointdeviationTIR(TotalIndicatorReading)定義：TIR=|a|+|b|(SEMI標(biāo)準(zhǔn)中為GFLR)說明：1.參考平面(bf)G為距上表面所有點(diǎn)截距之和最小的平面；FPD(FocalPlaneDeviation)定義：FPD=±Max(|a|,|b|)(SEMI標(biāo)準(zhǔn)中為GFLD)說明：1.如果|a|>|b|，則FPD取正值；反之取負(fù)值；2.參考平面G(bf)為距Wafer上表面所有點(diǎn)截距之和最小的平面；Warp定義：Warp=|a|+|b|說明：1.參考平面M為距曲面Medianplane所有點(diǎn)截距之和最小的平面；2.不考慮重力影響；LTV(LocalThicknessVariation)定義：LTVi=ai–bii=1,2,3,4,...,n(SEMI標(biāo)準(zhǔn)中為SBIR)說明：1.參考平面B為Wafer背面；2.LTVmax=Max(LTV1,LTV2,...,LTVn)STIR(SiteTotalIndicatorReading)定義：STIRi=|ai|+|bi|i=1,2,3,4,...,n(SEMI標(biāo)準(zhǔn)中為SFLR)說明：1.參考平面Gi通過每一單元塊的中心且平行于wafer上表面的擬合平面bfG；2.G為距單元塊上每一點(diǎn)截距最小的平面；3.STIRmax=Max(STIR1,STIR2,...,STIRn)；STIR/L-Site(SiteTotalIndicatorReading)定義：STIRi/L=|ai|+|bi|i=1,2,3,4,...,n(SEMI標(biāo)準(zhǔn)中為SFQR)說明：1.參考平面bfGi為距單元塊上每一點(diǎn)截距最小的平面；2.STIRi/Lmax=Max(STIR1/L,STIR2/L,...,STIRn/L)；SFPD/G-Site定義：SFPDi/G=±Max(|ai|,|bi|)i=1,2,3,4,...,n(SEMI標(biāo)準(zhǔn)中為SFLD)說明：1.|a|>|b|,取正值；|a|<|b|,取負(fù)值；2.參考平面Gi通過每一單元塊的中心且平行于wafer上表面的擬合平面bfG；3.SFPD/Gmax=Max(SFPD1/G,SFPD2/G,...,SFPDn/G)SEMIStandardFQAMeasurement

MethodReference

SurfaceReference

PlaneandAreaReference

PlaneandAreaReference

SurfaceSiteSize

and

ArrayParameterParameterGBIRGF3RGF3DGFLRGFLDSF3RSF3DSFLRSFLDSFQRSFQDSBIRSBIDRangeRangeDeviationRangeDeviationRangeDeviationRangeDeviationRangeDeviationRangeDeviationParameterParameterParameterParameterParameterReference

PlaneandAreaReference

PlaneandAreaS-TIRS-FPDS-TIRS-FPDS-TIRS-FPDLTVS-FPD

Semi用語現(xiàn)行習(xí)慣用語TTVTIRFPDTIR

NTVFPDFrontRef.CenterFocus3pointBestFitSiteBestFitBackRef.

CenterFocusSiteFlatnessGlobalFlatnessFrontBackBackFront3Point3Point(全面)Ideal(全面)(最小二乗法)bf

LeastSquares

(全面)LeastSquares

(全面)(bf)LeastSquares

(site)Ideal(全面)參考面的選取

(表面or背面)參考平面的設(shè)定

(bfor3pt)

又稱理想平面(FlatnessQualityArea)FlatnessToolsPrinciple:Capacitancesensor(ADE)Wafertbcat=a-b-cRingSpacing局部平整度測(cè)量邊緣問題PartialsActiveSiteSetup

Greenlinesindicatespartialsites.

兩種方式測(cè)量結(jié)果差異舉例---SFQDTrendChangedMeasurementtoPartialSitesActiveChangingtoPartialSitesActiveIncreasedSFQDonasampleofEpiwafersInactive0.17umActive0.24um

平整度SEMI標(biāo)準(zhǔn)ITEMSPOLISHEDWAFEREPITAXIALWAFER1.0umDesignRuleTwin-TubCMOS0.35umDesignRuleTwin-TubCMOS0.35umDesignRuleDRAMTTV(GBIR)10um----5umTIR(GFLR)------3umSFQD--<=0.5um18x18mm<=0.23um22x22mm<=0.35um22x22mmBOW60um------WARP60um------SEMISTANDARDFOR150mm(SEMIM1ANDM11)工藝過程硅片平整度變化擦片后、一次/犧牲氧化（900C）后、SIN（700C）后采用光刻PENKIB1設(shè)備進(jìn)行平整度測(cè)量，每片的平整度三次測(cè)量結(jié)論：數(shù)值差異不大平整度有增大的趨勢(shì)聚焦異常FlatnessValues測(cè)量TTVTIRBestFitSFPDBestFitBowBestFitWarpBestFitS1Defocus5.6201.943-0.271-0.736.16S2Defocus6.9552.443-0.241-20.6142.14S3Defocus5.2332.363+0.314-17.0035.77S233.0301.600-0.292+0.517.31S25OK2.8681.793-0.297-17.8238.35EPINotProc3.0651.801-0.224------異常與TTV相關(guān)

聚焦異常FlatnessValues測(cè)量SFQDSiteBestFitCurrentSBIDBackRefSFLDFrontRefBestFitSF3DFrontRef3PointS1Defocus-0.271-1.311-0.940-0.966S2Defocus-0.241-1.649-1.204-1.262S3Defocus+0.314-1.502