模電設(shè)計(jì)-電流鏡負(fù)載的差分放大器

模擬集成電路課程設(shè)計(jì)報告電流鏡負(fù)載的差分放大器摘要:差分放大器是最重要的電路發(fā)明之一，它可以追溯到真空管時代。有于差動放大具有很多有用的特性， 像對差模輸入信號的放大作用和對共模輸入信號的抑制作用， 所以它已經(jīng)成為當(dāng)代高性能模擬電路和混合信號電路的主要選擇。 電流源在差分放大器中廣泛應(yīng)用， 電流源起一個大電阻的作用， 但不消耗過多的電壓余度。 在模擬電路中，電流源的設(shè)計(jì)是基于對基準(zhǔn)電流的“復(fù)制” ，穩(wěn)定的基準(zhǔn)電流則由一個相對復(fù)雜的電路來產(chǎn)生。 在電流鏡中， 只需調(diào)整 MOS管的W/L就能獲得不同的、精確的復(fù)制電流。在本課程設(shè)計(jì)中，將根據(jù)典型電流鏡負(fù)載差動對中，增益、帶寬與 MOS管W/L之間的關(guān)系，獲得滿足要求的放大器。一.設(shè)計(jì)目標(biāo) 二．單個 MOS一.設(shè)計(jì)目標(biāo) 二．單個 MOS管的的特性2.1、NMOS特性仿真 - 2 - - 2 -、 PMOS特性仿真 - 4 -\o"CurrentDocument"三．電路設(shè)計(jì)與參數(shù)推導(dǎo) - 6 -電路設(shè)計(jì)： - 6 -\o"CurrentDocument"手工推導(dǎo)參數(shù) - 7 -\o"CurrentDocument"四．差分放大器仿真 - 9 -HSPICE仿真： - 9 -器件參數(shù)修改 - 10 -仿真波形 - 12 -、共模電平的范圍： - 13 -數(shù)據(jù)對比 - 16 -五.總結(jié) - 17 ----設(shè)計(jì)一款差分放大器，要求滿足性能指標(biāo)：參考電路圖：一.設(shè)計(jì)目標(biāo)負(fù)載電容 CL1pFVDD5V對管的m取4的倍數(shù)低頻開環(huán)增益 >100GBW（增益帶寬積 ）>30MHz輸入共模范圍 >3V功耗、面積盡量小MOS管的的特性MOS管是金屬 (metal)—氧化物 (oxid)—半導(dǎo)體 (semiconductor)你(insulator)—半導(dǎo)體。 MOS管source和drain是可以對調(diào)的，他們都是在 P型backgate中形成的N型區(qū)。在多數(shù)情況下，這個兩個區(qū)是一樣的，即使兩端對調(diào)也不會、NMOS特性仿真HSPICE仿真:ProjectNMOSInnovedaWirelistCreatedwithVersion6.3.5Inifile:Options:-h-d-n-m-z-x-c6Levels:*.prot.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'tt

.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'res.unprotM1I1VBSVDS.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'cap.unprotM1I1VBSVDSM=1VDVB0 0NVNL=1UW=10UM=1VB0 1VD0 5DICTIONARY1GND=0.optionspostlist.dcVDS050.1.op.printi1(M1I1).END仿真波形：仿真得出的數(shù)據(jù)：subcktelement0:m1i1model0:nvnregionSaturatiid 18.6184uibs-4.227e-22ibd -23.6496avgs 1.0000vds 5.0000vbs 0.

vthvdsatvodbetagameffgmgdsgmbcdtotcgtotcstotcbtotcgscgd參數(shù)計(jì)算：830.1150m125.6460m169.8850m1.4749m894.5056m192.1882u1.2418u72.1958u12.5800f24.0149f31.6174f34.8211f18.4311f2.8784fID2nCox830.1150m125.6460m169.8850m1.4749m894.5056m192.1882u1.2418u72.1958u12.5800f24.0149f31.6174f34.8211f18.4311f2.8784fVIDDS 12 nCox(WL)(VGSVTH)2nn=0.035、PMOS特性仿真HSPICE仿真：ProjectPMOSInnovedaWirelistCreatedwithVersion6.3.5Inifile:Options:-h-d-n-m-z-x-c6*Levels:*.prot.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'tt.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'res.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'cap.unprotM1I1VDSVGSVDDVDDNVPL=1UW=10UM=1V1I2 VGS0 4V1I3 VDS0 5V1I4VDD05DICTIONARY1GND=0.optionspostlist.dcV1I3050.1*V1I23.550.1.op.printi1(M1I1).END仿真得出的數(shù)據(jù)：subcktelement0:m1i1

modelregionidibsmodelregionidibsibdvgsvdsvbsvthvdsatvodbetagameffgmgdsgmbcdtotcgtotcstotcbtotcgscgd參數(shù)計(jì)算：Linear0.0.0.-1.00000.0.-899.3391m-136.0660m-100.6609m471.1383u384.0716m0.46.9930u0.29.4825f30.8144f30.3463f40.6913f17.7584f12.8808fTOC\o"1-5"\h\z1W 2ID2pCox(L)(VGSVTH)(1+pVDS)IDVIDVDSnCox( )(VGS VTH) p2L由仿真結(jié)果可以得出 p=0.0729p三．電路設(shè)計(jì)與參數(shù)推導(dǎo)電路設(shè)計(jì)：

手工推導(dǎo)參數(shù)n0.035，VTH0.7231，tox1.17108， n=3.830010-2p0.0729，VTH0.906，tox1.2108， n=2.43342410-2由庫文件可以得到上述除了 λn、λp外的器件參數(shù)， λn、λp可以由mos管的仿真得到。0si 3Cox0si=2.95103tox由性能指標(biāo)低頻開環(huán)增益 >100，GBW（增益帶寬積 ），CL=1pf可得AV gAV gm(ro2//ro4)100BW3dB12(ro2//ro4)CLGBWgm301062CL求得gm22CL301061.88491044我們設(shè)計(jì)中取 gm2310。11ro2//ro42 4 (np)ID0.1079ID

BW3dB2(roBW3dB2(ro2//ro4)CL30104AV2CL30104 6IDL 17.469106A另一方面求得 ID27.8106另一方面求得 ID27.8106A。因此 ID可取的范圍為AV gm(ro2//ro4)gm21 100(np)ID17.469mAID27.8mA。所以我們?nèi)芜呺娏?ID=25mA。忽略溝長調(diào)制效應(yīng)，W15.931求得Lg忽略溝長調(diào)制效應(yīng)，W15.931求得Lgm2 2nCoxIDWW2gm2LL2nCoxIDW()1216這里我們?nèi)?L12下一步應(yīng)該確定 M3，M4，M5，M6的寬長比。D1CoxW(VGSVTH)2(1 VDS)可得2I可得2ID2IDLCox(VGSVTH)2(1 VDS) Cox(VGSVTH)2M5M5，M6的取負(fù)載管 M3，M4的過驅(qū)動電壓(W)34TOC\o"1-5"\h\z這里我們?nèi)?L34同理取電流源管( )34 7.739Vod=300mV可得L 。過驅(qū)動電壓 Vod=500mV可得AVgmAVgm(ro2//ro4)2 nCoxIDWL1(n p)ID343.540。這里我們?nèi)?WL)56這里我們?nèi)?AV30106 6111.214100理論開環(huán)增益 :V 0.107925106g 310GBWgm 310 47.746M理論單位增益帶寬 : 2CL 2109理論共模輸入電平最小VincomMINVGS1Vod60.723231理論共模輸入電平最大VincomMAX5VVGS3VTH15(0.9060.3)0.72314.5171理論共模輸入電平范圍最大值為 V=4.5171-1.4231=3.0940V四．差分放大器仿真電流源負(fù)載的差分放大器整體電路圖：HSPICE仿真：ProjectDC_NMOSInnovedaWirelistCreatedwithVersion6.3.5Inifile:Options:-h-d-n-m-z-x-c6Levels:*.prot.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'tt.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'res.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'cap.unprotcoutvout01pfM3M3dg-M4g-M1dM3dg-M4g-M1dvddvddNVPL=1UW=8UM=1

M4 voutM3dg-M4g-M1dvddvdd NVPL=1UW=8UM=1M1 M3dg-M4g-M1din1M1s-M2s-M6d0NVNL=1UW=16U M=1sM2 voutin2M1s-M2s-M6d0NVNL=1UW=16UM=1M6 M1s-M2s-M6dM6g-M5dg0 0 NVNL=1UW=4U M=1M5M6g-M5dgM6g-M5dg0 0NVNL=1UW=4UM=1V1vdd05VI10M6g-M5dgDC=50uAVin1in202.5Vac=0.5vVin2in102.5Vac=0.5v180DICTIONARY1GND=0.OPTIONSPROBE.OP.dcV1050.1.acdec101k100meg.optionslistnodepost.printacvdb(vout).end4.2、器件參數(shù)修改發(fā)現(xiàn)波形鎖呈現(xiàn)出來的增益帶寬積為 43.1M，已經(jīng)達(dá)到題目的要求， 但是低頻開環(huán)增益39.6db左右，即放大倍數(shù)小于 100倍，達(dá)不到題目要求，所以嘗試加大 M1,M2的M值，m為4的倍數(shù)，所以各自增大到 4.hspice仿真如下：ProjectDC_NMOS

InnovedaWirelistCreatedwithVersion6.3.5Inifile:Options:-h-d-n-m-z-x-c6Levels:*.prot.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'tt.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'res.lib'D:\ePD\05model\05model\h05hvcddtt09v01.lib'cap.unprotcoutvout01pfM=1M=4M=1M=4M4 voutM3dg-M4g-M1dvddvdd NVPL=1UW=8UM=1M1 M3dg-M4g-M1din1M1s-M2s-M6d0NVNL=1UW=16UM2 voutin2M1s-M2s-M6d0NVNL=1UW=16UM=4TOC\o"1-5"\h\zM6 M1s-M2s-M6dM6g-M5dg0 0NVNL=1UW=4U M=1M5M6g-M5dgM6g-M5dg0 0NVNL=1UW=4UM=1V1 vdd0 5VI10M6g-M5dgDC=50uAVin1 in20 2.5Vac=0.5vVin2 in10 2.5Vac=0.5v 180DICTIONARY1GND=0.OPTIONSPROBE.OP.dcV1050.1.acdec101k100meg.optionslistnodepost.printacvdb(vout).end

4.3仿真波形圖中明顯能看出放大器的單位增益帶寬超過 42db即放大倍數(shù)有 125.89，同59.1M，明顯已經(jīng)滿足設(shè)計(jì)中的帶寬和增益的要求。仿真的.lis文件部分?jǐn)?shù)據(jù)如下：*projectdc_nmosacanalysistnom=25.000temp=25.000acanalysisfreqvoltdbvout1.00000k42.33431.25893k42.33431.58489k42.33421.99526k42.33422.51189k42.33423.16228k42.33413.98107k42.33405.01187k42.33386.30957k42.33357.94328k42.333110.00000k42.332412.58925k42.331215.84893k42.329519.95262k42.326625.11886k42.3222

31.62278k42.315139.81072k42.303950.11872k42.286263.09573k42.258379.43282k42.2144100.00000k42.1458125.89254k42.0392158.48932k41.8754199.52623k41.6279251.18864k41.2625316.22777k40.7397398.10717k40.0218501.18723k39.0824630.95734k37.9154794.32823k36.53731.00000x34.98101.25893x33.28621.58489x31.49041.99526x29.62422.51189x27.71073.16228x25.76583.98107x23.80065.01187x21.82196.30957x19.83427.94328x17.840210.00000x15.841212.58925x13.837215.84893x11.827519.95262x9.810125.11886x7.781331.62278x5.735639.81072x3.664350.11872x1.554863.09573x-609.6717m79.43282x-2.8499100.00000x-5.1871共模電平的范圍：則在上面的 hspice語言中最后的修改如下：.OPTIONSPROBE.OP*.dcVin1050.1*.printacvM(vout).printi1(M3)

.optionslistnodepost.END出來的波形如下：可以看出當(dāng)輸入共模電平達(dá)到 1.6V時所有的 MOS管已處于飽和狀態(tài)。輸出電流基本比較接近 25mA了。以下數(shù)據(jù)是當(dāng)共模輸入電平為 Vincom=Vgsm1+Vdsm6=1.6V時仿真得到的數(shù)據(jù)****mosfetssubcktelement0:m30:m40:m10:m20:m60:m5model0:nvp0:nvp0:nvn0:nvn0:nvn0:nvnregionSaturatiSaturatiSaturatiSaturatiSaturatiSaturatiid-23.3008u-23.3008u23.3008u23.3008u46.6016u50.0000uibs1.185e-211.185e-21-16.2402a-16.2402a-1.058e-21-1.135e-21ibd4.6881a4.6881a-113.8455a-113.8455a -1.0139a -2.5571avgs-1.2392-1.23921.06351.06351.35211.3521vds-1.2392-1.23923.22433.2243536.4570m1.3521vbs0.0.-536.4570m-536.4570m0.0.vth-898.4776m-898.4776m1.02021.0202840.6927m839.6145mvdsat-325.6130m-325.6130m71.2561m71.2561m310.9569m311.4916mvod-340.7521m-340.7521m43.3089m43.3089m511.4315m512.5097mbeta359.5878u359.5878u9.5044m9.5044m576.1957u576.2126ugameff384.0653m384.0653m908.7034m908.7034m894.5198m894.5210mgm119.6053u119.6053u402.3115u402.3115u159.6314u174.0003ugds2.0864u2.0864u990.6995n990.6995n8.9999u2.0796ugmb29.2127u29.2127u120.0342u120.0342u56.6258u61.4295ucdtot11.5100f11.5100f83.0119f83.0119f7.0004f6.2662fcgtot20.3759f20.3759f131.8157f131.8157f9.6359f9.6096f26.4459f26.4459f163.4455f163.4455f13.1528f13.1500fcstot

cbtot28.1764f28.1764f199.0483f199.0483f16.2186f15.5264fcgs17.7019f17.7019f91.4478f91.4478f7.7484f7.7420fcgd1.6795f1.6795f18.1567f18.1567f1.0386f1.0019f以下數(shù)據(jù)時當(dāng)共模輸入電平為****mosfets以下數(shù)據(jù)時當(dāng)共模輸入電平為****mosfetssubcktelement0:m30:m40:m10:m20:m60:m5model0:nvp0:nvp0:nvn0:nvn0:nvn0:nvnregionSaturatiSaturatiSaturatiSaturatiSaturatiSaturatiid-26.0692u-26.0692u26.0692u26.0692u52.1384u50.0000uibs1.326e-211.326e-21-24.5995a-24.5995a-1.184e-21-1.135e-21ibd4.7720a4.7720a-28.2928a-28.2928a-6.1486a-2.5571avgs-1.2614-1.26141.74961.74961.35211.3521vds-1.2614-1.2614488.1626m488.1626m3.25041.3521vbs0.0.-3.2504-3.25040.0.vth-898.4814m-898.4814m1.60661.6066837.0766m839.6145mvdsat-343.1824m-343.1824m144.8909m144.8909m312.7809m311.4916mvod-362.9668m-362.9668m142.9751m142.9751m515.0476m512.5097mbeta358.2060u358.2060u2.3586m2.3586m576.2513u576.2126ugameff384.0646m384.0646m955.8307m955.8307m894.5218m894.5210mgm125.7337u125.7337u289.6421u289.6421u180.5302u174.0003ugds2.2816u2.2816u4.1017u4.1017u764.2799n2.0796ugmb30.7391u30.7391u45.7557u45.7557u63.5969u61.4295ucdtot11.4719f11.4719f20.1149f20.1149f5.6403f6.2662fcgtot20.3750f20.3750f35.3235f35.3235f9.7477f9.6096fcstot26.4458f26.4458f37.8057f37.8057f13.1491f 13.1500fcbtot28.1257f28.1257f40.1024f40.1024f14.7630f 15.5264fcgs17.7131f17.7131f28.2358f28.2358f7.7386f7.7420fcgd1.6796f1.6796f3.8744f3.8744f1.1407f1.0019fV=5-1.6=3.4V這個值比理論計(jì)算出來的值大，這是由于實(shí)際中我們忽略了放大管M1，M2的這個值比理論計(jì)算出來的值大，這是由于實(shí)際中我們忽略了放大管襯偏效應(yīng)。實(shí)際上可以看出在 Vin=1.6V時，M1，M2管已經(jīng)存在襯偏效應(yīng)，此時放大管的閾值電壓輸入共模電平增大到536.4570mV增大到?jīng)]有進(jìn)入線性區(qū)。時放大管的閾值電壓輸入共模電平增大到536.4570mV增大到?jīng)]有進(jìn)入線性區(qū)。5V，此時的閾值電壓增大到 VTH=1.6066V，并且Vds6從3.2504V。從而導(dǎo)致即使輸入共模電平增大到 5V，負(fù)載管仍一下數(shù)據(jù)是仿真得到功耗：****voltagesourcessubcktelementvoltscurrent0:v1subcktelementvoltscurrent0:v15.0000-49.7605u0:vin12.50000.power248.8025u 0.tot