ACF材料簡要介紹

周驊

JI工程2課ACF材料介紹目錄WhatisACFACF之應(yīng)用ACF材料介紹ACF與COG製程參數(shù)之關(guān)係ACF與COG製程品質(zhì)之關(guān)係WhatisACF一.異方性導(dǎo)電膠

AnisotropicConductiveFilm二.佈滿導(dǎo)電粒子之熱硬化樹脂膠帶三.提供特定方向之導(dǎo)電功能四.具有良好之接著效果ACF之應(yīng)用PCBPanelChipGlassPCBPanelFPCGlassFPCPCBFPCGlassCOFPCBCOFCOFChipCOFACF材料介紹(forFPC)AC-7106U-25TypeofSeparaterACF厚度1000mm10=

100mmFPCminPitch一.FPCminspace:50μm二.FPCminwidth:50μm三.ConnectionResistance:2四.IsulationResistance:10^12PanelFPC

width

spaceACF材料介紹(forFPC:7106)五.厚度:25μm(取決於FPC導(dǎo)線之高度,請見續(xù)頁詳述)六.長度:50M七.寬度:2.5mm(取決於FPC壓著區(qū)域之寬度)八.粒子大小:10μm九.粒子密度:800pcs/mm^2十.接著劑:熱硬化樹脂十一.Separater:防靜電PETAuNiPlasticParticleACF材料介紹(forFPC:7106)十二.ACF厚度與FPC的關(guān)係

W:conductorwidthS:conductorspaceH:conductorheightT0:ACFthicknessbeforebonding

T1:ACFthicknessafterbonding

:correctionvalue(0.15H)FPCT0HSWPanelPanelFPCT1

(W+S)*T0=H*S+T1*(W+S)ifW=ST0=H/2+T1+

ACF材料介紹(forCOG:8304)一.厚度:23μm(取決於ICBump之高度,請見續(xù)頁詳述)二.長度:50M三.寬度:2.5mm(取決於IC之寬度)四.粒子大小:5μm五.粒子密度:20000pcs/mm^2六.接著劑:熱硬化樹脂七.Separater:防靜電PET八.DoublelayerAuNiPlasticParticleACF與COG製程參數(shù)之關(guān)係86420

02505007501000Time(hr)Connectionresistance()170C190C210C10sec

Bonding86420

02505007501000Time(hr)Connectionresistance()190C210C230C一.製程溫度\時間接觸阻抗5sec

Bonding190C210C85

C,85%RHACF與COG製程參數(shù)之關(guān)係Connectionresistance()86420

02505007501000Time(hr)二.製程壓力接觸阻抗25MPa50MPa100MPa200MPa250MPa50~150MPa85

C,85%RHACF與與COG製程品品質(zhì)之關(guān)關(guān)係Connectionresistance()86420051015Numberofparticle(perBump)一.導(dǎo)電電粒子數(shù)數(shù)接接觸觸阻抗86420051015t=0hrt=500hrs-40C100C每個goldbump導(dǎo)電粒子數(shù)須大於5顆ACF與COG製程品質(zhì)質(zhì)之關(guān)係二.導(dǎo)電粒子子變形量接接觸阻阻抗Connectionresistance()Deformation(%)86420020406080t0=5μmtBumpBumpGlassGlassDeformation=t0-tt0100%每個導(dǎo)電粒子壓著變形量須大於20%ACF與COG製程品質(zhì)質(zhì)之關(guān)係三.導(dǎo)電粒子子變形量判判別標標準ACF與COG製程品質(zhì)質(zhì)之關(guān)係四.ACF厚厚度接接觸阻抗Connectionresistance()86420ACFThickness(μm)8642015202530t=0hrt=500hrs-40C100C15202530ACFThicknessBumpheight+3μm18μmBumpheight:15μmACF與COG製程品質(zhì)質(zhì)之關(guān)係五.Bumphardness接接觸觸阻抗Connectionresistance()Time(hr)15~25Hv40~50Hv100~110Hv8642002505007501000Bumphardness50Hv85C,85%RH100~110Hv40~50Hv15~25Hv導(dǎo)電粒子未壓破變形形導(dǎo)電粒子變形量20%導(dǎo)電粒子變形量50%ACF與COG製程程品質(zhì)之關(guān)關(guān)係六.Bumppad導(dǎo)電粒粒子數(shù)導(dǎo)導(dǎo)電電粒子密度度Numberofconductingparticlesonabump302010005101520DoublelayerSinglelayerBumpsize:70um*70umparticlesize:5umParticledensity(1000pcs/mm^2)Doublelayer導(dǎo)電粒子抓取率:50%Singlelayer導(dǎo)電粒子抓取率:30%ACF與COG製程程品質(zhì)之關(guān)關(guān)係七.Layerstructureinsulation100806040200051015202530DoublelayerSinglelayerDoublelayer較不易短路Probabilityofshortcircuit(%)Conductorspacing(um)ConductorspacingACF與COG製程程品質(zhì)之關(guān)關(guān)係八.Layerstructureinsulationresistance10^1210^1110^1010^910^810^4051015202530DoublelayerSinglelayerDoublelayer絕緣性較佳Conductorspacing(um)ConductorspacingInsulationresistance(