載子壽命原理測試方法的實(shí)際作用介紹

1、會(huì)計(jì)學(xué)1載子壽命原理測試方法的實(shí)際作用介紹載子壽命原理測試方法的實(shí)際作用介紹Page 2光電流與載子光電流與載子Page 3動(dòng)態(tài)動(dòng)態(tài)偏壓情況下的偏壓情況下的PN結(jié)中性區(qū)空乏區(qū)結(jié)中性區(qū)空乏區(qū)在以太陽模擬測試系統(tǒng)量測太陽電池片在以太陽模擬測試系統(tǒng)量測太陽電池片IV曲線時(shí)，曲線時(shí)，PN結(jié)存在一個(gè)動(dòng)態(tài)偏壓情況下工作。結(jié)存在一個(gè)動(dòng)態(tài)偏壓情況下工作。為解決此復(fù)雜現(xiàn)象，單一二極體模型須要增加另一代為解決此復(fù)雜現(xiàn)象，單一二極體模型須要增加另一代表合復(fù)電流的二極管（及串，并聯(lián)電阻）才足夠充分表合復(fù)電流的二極管（及串，并聯(lián)電阻）才足夠充分說明空乏區(qū)復(fù)合現(xiàn)象及太陽電池等效電路說明空乏區(qū)復(fù)合現(xiàn)象及太陽電池等效電路 P

2、age 4A.初步描述空乏區(qū)電場 (漂移電流-Drift Current)B.進(jìn)一步描述類中性區(qū)摻雜濃度梯度（擴(kuò)散電流 -Diffusion Current)C.強(qiáng)調(diào)載子由于激發(fā)所產(chǎn)生與復(fù)合而形成電流梯度 復(fù)合與過剩載子基本關(guān)系各種復(fù)合機(jī)制少子壽命的倒數(shù) 0VV0V/et n( p)=Ae-t/ , is lifetime, p, n is excess carriersPhotovoltage follow the law: V= V0e-t/ Page 6eff = =nqw J ph移動(dòng)率移動(dòng)率(Mobility)與電導(dǎo)與電導(dǎo)L 由光產(chǎn)生過剩載子濃度增加，導(dǎo)致Wafer Conducti

3、vity增加 J photogeneration = J recombinationLJ ph (n+p) -依Wafer表面反射，厚度，光照條件及Light Trapping情形而調(diào)整- Excess carrier density is position dependent and considering thickness,as average value-Mobilities are a function themselves of carrier density(both via doping and excitation) and temperature Therefore, th

4、e absolute value of conductance ahould be always measured in order to determine the specific excess carrier density at which the measurement has taken placed-Cuevas,Macdonald 2003 ANU體壽命體壽命b與與有效有效壽命壽命effPage 7體壽命體壽命b與與有效有效壽命壽命effPage 8體壽命體壽命b與與有效有效壽命壽命effPage 9Page 10bbbDL=Page 11 Band to Band，由於，由於

5、Radiative Lifetime很長對(duì)於很長對(duì)於Si材料材料影響不大，可以不計(jì)入考慮影響不大，可以不計(jì)入考慮.(對(duì)直接能隙對(duì)直接能隙GaAs 較明顯較明顯) Auger與雜質(zhì)濃度無關(guān)，但與載子濃度平方成反比與雜質(zhì)濃度無關(guān)，但與載子濃度平方成反比 SRH直接與直接與Si材料雜質(zhì)有關(guān)，所以當(dāng)載子濃度高時(shí)，材料雜質(zhì)有關(guān)，所以當(dāng)載子濃度高時(shí)，Auger復(fù)復(fù)合為主要因素，而低載子濃度時(shí)，由合為主要因素，而低載子濃度時(shí)，由SRH復(fù)合為主復(fù)合為主電子電洞產(chǎn)生電子電洞產(chǎn)生Generation與合復(fù)與合復(fù)Recombination (一一)Page 12電子電洞產(chǎn)生電子電洞產(chǎn)生Generation與合復(fù)與合

6、復(fù)Recombination (二二)With Diffused SurfacePage 13Page 14Page 15Page 16Page 17Page 18Page 19Page 20Standard Production Cell :1x10E135X10E14, at VocHigh Efficiency Cell :1x10E15-1X10E16Concentration PV :1X10E17Thin Crystalline Silicon Solar Cell :1x10E13Page 21WCT-120 : Silicon Wafer Lifetime Tester wit

7、h Suns-VocPage 22Page 23Page 24Page 25QSSPCPage 26Page 27Good Agreement between QSS-PC and MW-PCD ,but this was history! Now we need to understand the result in a more accurate wayPage 28Page 29QSS-PL and QSS-PCAi: Proportional constantBi: Radiative recombination coefficientBT ImagingPage 30Page 31C

8、apability and Restriction with long term viewPage 32TI-PL Temperature and Injection Dependent PhotoLuminescenceDLTS Deep Level Transient SpectroscopyTDLS Temperature Dependent ( Low Injection ) lifetime spectroscopyIDLS Injection Dependent lifetime spectroscopyI-LIT/CDI Illuminated Lock-In-Thermogra

9、phy, Carrier Density ImageFuture concerns about Carrier LifetimePage 33MultiTool I-LIT, CDI, SRIILITILITIlluminated Lock-In ThermographyI-LIT for Power Loss ImageLifetime ImageSheet Resistance ImagineFast I-LIT at One Second for Production In-Line MonitoringPage 34Electroluminescence for Characteris

10、ation of Solar CellsFigure 2: Visual image of a solar cell in a laminated module.Figure 3: Electroluminescence image of the same solar cell.Page 35SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 36SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING

11、INFRARED IMAGING METHODSPage 37SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 38SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 39SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODS

12、Page 40SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 41SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 42SPATIALLY RESOLVED SILICON SOLAR CELL CHARACTERIZATION USING INFRARED IMAGING METHODSPage 43COMPARING LUMINES

13、CENCE IMAGING WITH ILLUMINATED LOCK-IN THERMOGRAPHY AND CARRIER DENSITY IMAGING FOR INLINE INSPECTION OF SILICON SOLAR CELLSPage 44COMPARING LUMINESCENCE IMAGING WITH ILLUMINATED LOCK-IN THERMOGRAPHY AND CARRIER DENSITY IMAGING FOR INLINE INSPECTION OF SILICON SOLAR CELLSPage 45COMPARING LUMINESCENC

14、E IMAGING WITH ILLUMINATED LOCK-IN THERMOGRAPHY AND CARRIER DENSITY IMAGING FOR INLINE INSPECTION OF SILICON SOLAR CELLSPage 46COMPARING LUMINESCENCE IMAGING WITH ILLUMINATED LOCK-IN THERMOGRAPHY AND CARRIER DENSITY IMAGING FOR INLINE INSPECTION OF SILICON SOLAR CELLSPage 47PHOTOLUMINESCENCE IMAGING

15、 ON SILICON BRICKSPage 48PHOTOLUMINESCENCE IMAGING ON SILICON BRICKSPage 49PHOTOLUMINESCENCE IMAGING ON SILICON BRICKSPage 50Page 51Page 52Page 53Root Cause Analysis最根本最根本分析分析Page 54Page 55Page 56Page 57Page 58Page 59Local Series ResistanceLocal Junction BreakdownLocal Reverse Currents in Hot SpotsC

16、orrelated to Final Cell Efficiency through Fill FactorLIS-R1 is the fastest, highest resolution and most flexible Lab tool for root causes analysis Total Solution of Monitoring Full Wafer Carrier Lifetime for High Yield Rate and Cell EfficiencyPage 60光電流與載子光電流與載子Page 61Standard Production Cell :1x10E135X10E14, at VocHigh Efficiency Cell :1x10E15-1X10E16Concentration PV :1X10E17Thin Crystalline Silicon Solar Cell :1x10E13Page 62Page 63Page 64SPATIALLY RESOL