半導體物理與器件第四版課后習題答案1_第1頁
半導體物理與器件第四版課后習題答案1_第2頁
半導體物理與器件第四版課后習題答案1_第3頁
半導體物理與器件第四版課后習題答案1_第4頁
半導體物理與器件第四版課后習題答案1_第5頁
全文預覽已結束

下載本文檔

版權說明:本文檔由用戶提供并上傳,收益歸屬內容提供方,若內容存在侵權,請進行舉報或認領

文檔簡介

1、Chapter 1Problem Solutions1.1(a) fcc: 8 corner atomsatom 6 face atoms atoms Total of 4 atoms per unit cell(b) bcc: 8 corner atomsatom 1 enclosed atom =1 atom Total of 2 atoms per unit cell(c) Diamond: 8 corner atomsatom 6 face atomsatoms 4 enclosed atoms = 4 atoms Total of 8 atoms per unit cell_1.2(

2、a) Simple cubic lattice: Unit cell vol 1 atom per cell, so atom vol Then Ratio (b) Face-centered cubic lattice Unit cell vol 4 atoms per cell, so atom vol Then Ratio (c) Body-centered cubic lattice Unit cell vol 2 atoms per cell, so atom vol Then Ratio (d) Diamond lattice Body diagonal Unit cell vol

3、 8 atoms per cell, so atom vol Then Ratio _1.3(a) ; From Problem 1.2d, Then Center of one silicon atom to center of nearest neighbor (b) Number density cm(c) Mass density grams/cm_1.4(a) 4 Ga atoms per unit cell Number density Density of Ga atoms cm 4 As atoms per unit cell Density of As atoms cm(b)

4、 8 Ge atoms per unit cell Number density Density of Ge atoms cm_1.5 From Figure 1.15(a) (b) _1.6 _1.7 (a) Simple cubic: (b) fcc: (c) bcc: (d) diamond: _1.8(a) (b)(c) A-atoms: # of atoms Density cm B-atoms: # of atoms Density cm_1.9(a)# of atoms Number density cmMass density gm/cm(b)# of atoms Number

5、 density cmMass density gm/cm_1.10 From Problem 1.2, percent volume of fcc atoms is 74%; Therefore after coffee is ground, Volume = 0.74 cm_1.11(b)(c) Na: Density cm Cl: Density cm(d) Na: At. Wt. = 22.99Cl: At. Wt. = 35.45 So, mass per unit cell Then mass density grams/cm_1.12(a) Then Density of A:

6、cm Density of B: cm(b) Same as (a)(c) Same material_1.13 (a) For 1.12(a), A-atoms Surface density cm For 1.12(b), B-atoms: Surface density cm For 1.12(a) and (b), Same material(b) For 1.12(a), A-atoms; Surface density cm B-atoms; Surface density cm For 1.12(b), A-atoms; Surface density cm B-atoms; S

7、urface density cm For 1.12(a) and (b), Same material_1.14(a) Vol. Density Surface Density (b) Same as (a)_1.15(i) (110) plane (see Figure 1.10(b) (ii) (111) plane (see Figure 1.10(c) (iii) (220) plane Same as (110) plane and 110 direction (iv) (321) plane Intercepts of plane at 321 direction is perp

8、endicular to (321) plane_1.16 (a) (b) _1.17 Intercepts: 2, 4, 3 (634) plane_1.18(a)(b)(c)_1.19(a) Simple cubic (i) (100) plane:Surface density cm(ii) (110) plane:Surface density cm(iii) (111) plane:Area of plane where Now So Area of plane cm Surface density cm(b) bcc (i) (100) plane:Surface density

9、cm(ii) (110) plane:Surface density cm(iii) (111) plane:Surface density cm(c) fcc (i) (100) plane:Surface density cm(ii) (110) plane:Surface density cm(iii) (111) plane:Surface density cm_1.20(a) (100) plane: - similar to a fcc: Surface density cm(b) (110) plane: Surface density cm(c) (111) plane: Su

10、rface density cm_1.21 (a) #/cm cm(b) #/cm cm(c)(d) # of atoms Area of plane: (see Problem 1.19) Area cm #/cm = cm _1.22 Density of silicon atoms cm and 4 valence electrons per atom, so Density of valence electrons cm_1.23 Density of GaAs atoms cm An average of 4 valence electrons per atom, So Density of valence ele

溫馨提示

  • 1. 本站所有資源如無特殊說明,都需要本地電腦安裝OFFICE2007和PDF閱讀器。圖紙軟件為CAD,CAXA,PROE,UG,SolidWorks等.壓縮文件請下載最新的WinRAR軟件解壓。
  • 2. 本站的文檔不包含任何第三方提供的附件圖紙等,如果需要附件,請聯(lián)系上傳者。文件的所有權益歸上傳用戶所有。
  • 3. 本站RAR壓縮包中若帶圖紙,網(wǎng)頁內容里面會有圖紙預覽,若沒有圖紙預覽就沒有圖紙。
  • 4. 未經(jīng)權益所有人同意不得將文件中的內容挪作商業(yè)或盈利用途。
  • 5. 人人文庫網(wǎng)僅提供信息存儲空間,僅對用戶上傳內容的表現(xiàn)方式做保護處理,對用戶上傳分享的文檔內容本身不做任何修改或編輯,并不能對任何下載內容負責。
  • 6. 下載文件中如有侵權或不適當內容,請與我們聯(lián)系,我們立即糾正。
  • 7. 本站不保證下載資源的準確性、安全性和完整性, 同時也不承擔用戶因使用這些下載資源對自己和他人造成任何形式的傷害或損失。

評論

0/150

提交評論