AOD508規(guī)格書

1、aod508/aoi50830v n-channel alphamosgeneral descriptionproduct summaryvds id (at vgs=10v)70a rds(on) (at vgs=10v) 3m ? rds(on) (at vgs = 4.5v) 4.5m ?application100% uis tested100% rg testedsymbolvdsdrain-source voltage30vmaximumunitsparameterabsolute maximum ratings ta=25 c unless otherwise noted30v?

2、 latest trench power mosfet technology? very low rds(on) at 10vgs? low gate charge? high current capability? rohs and halogen-free compliant? dc/dc converters in computing? isolated dc/dc converters in telecom and industrialgd sto252dpaktopviewbottom viewggddssdggddssdtop viewbottom viewto-251aipakv

3、gsidmiaseasvds spikevspiketj, tstgsymbolt 10ssteady-statesteady-stater jc 100ns36vmaximum junction-to-ambient a c/wr ja164120unitsjunction and storage temperature range-55 to 175cthermal characteristicsparametertypv20gate-source voltagemaxta=70 cid7055tc=25 ctc=100 c159pulsed drain current ccontinuo

4、us draincurrent gmjavalanche current c18continuous draincurrent6822a37avalanche energy l=0.1mh cata=25 cidsmawpower dissipation apdsmwta=70 c501.6ta=25 ctc=25 c2.525tc=100 cpower dissipation bpdmaximum junction-to-case c/w c/wmaximum junction-to-ambient a d2.1503 rev 1: april 2012 page 1 of 6 aod508

5、/aoi508 symbolmintypmaxunitsbvdss30vvds=30v, vgs=0v1tj=55 c5igss100navgs(th)gate threshold voltage1.21.82.2v2.43tj=125 c3.54.43.34.5m?gfs105svsd0.71vis58aciss2010pfcoss898pfcrss124pfrg0.91.82.7?qg(10v)3649ncqg(4.5v)1723ncqgs6ncqgd8nctd(on)7.5nstr4.0nsnsreverse transfer capacitancevgs=0v, vds=15v, f=

6、1mhzvds=vgs ，id=250 aturn-on rise timevgs=10v, vds=15v, rl=0.75 ? ,turn-on delaytimegate resistancevgs=0v, vds=0v, f=1mhztotal gate chargegate source chargegate drain chargetotal gate chargeswitching parametersvgs=10v, vds=15v, id=20aelectrical characteristics (tj=25 c unless otherwise noted)static

7、parametersparameterconditionsidss azero gate voltage drain currentdrain-source breakdown voltageid=250 a, vgs=0vvds=0v, vgs= 20vmaximum body-diode continuous current ginput capacitanceoutput capacitanceforward transconductanceis=1a,vgs=0vvds=5v, id=20adynamic parametersvgs=4.5v, id=20ards(on)static

8、drain-source on-resistancediode forward voltagem?vgs=10v, id=20agate-body leakage currenttd(off)37.0tf7.5nstrr14nsqrr20.3ncthis product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does

9、 not assume any liability arisingout of such applications or uses of its products. aos reserves the right to improve product design,functions and reliability without notice.body diode reverse recovery chargebody diode reverse recovery timeif=20a, di/dt=500a/ sturn-off delaytimergen=3?turn-off fall t

10、imeif=20a, di/dt=500a/ sa. the value of r jais measured with the device mounted on 1in2fr-4 board with 2oz. copper, in a still air environment with ta=25 c. the power dissipation pdsmis based on r jaand the maximum allowed junction temperature of 150c. the value in any given application depends on t

11、he users specific board design, and the maximum temperature of 175c may be used if the pcb allows it.b. the power dissipation pdis based on tj(max)=175 c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is us

12、ed. c. single pulse width limited by junction temperature tj(max)=175 c. d. the r jais the sum of the thermal impedance from junction to case r jcand case to ambient.e. the static characteristics in figures 1 to 6 are obtained using 300 s pulses, duty cycle 0.5% max.f. these curves are based on the

13、junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of tj(max)=175c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device moun

14、ted on 1 in2fr-4 board with 2oz. copper, in a still air environment with ta=25 c. rev 1: april 2012 page 2 of 6 aod508/aoi508 typical electrical and thermal characteristics051015202530354045500123456id(a)vgs(volts)figure 2: transfer characteristics (note e)0123456051015202530rds(on)(m?)id(a)figure 3

15、: on-resistance vs. drain current and gate voltage (note e)0.811.21.41.61.80255075100125150175200normalizedon-resistancetemperature ( c)figure 4: on-resistance vs. junction temperature vgs=4.5vid=20avgs=10vid=20a25c125 cvds=5vvgs=4.5vvgs=10v020406080100012345id(a)vds(volts)fig 1: on-region character

16、istics (note e)vgs=2.5v3.5v4.5v10v3v1.0e-051.0e-041.0e-031.0e-021.0e-011.0e+001.0e+011.0e+020.00.20.40.60.81.01.2is(a)vsd(volts)figure 6: body-diode characteristics (note e)25 c125 c(note e)02468246810rds(on)(m?)vgs(volts)figure 5: on-resistance vs. gate-source voltage (note e)id=20a25 c125 c rev 1:

17、 april 2012 page 3 of 6 aod508/aoi508 typical electrical and thermal characteristics175210018024681001020304050vgs(volts)qg(nc)figure 7: gate-charge characteristics0500100015002000250030000510152025capacitance(pf)vds(volts)figure 8: capacitance characteristicsciss01002003004000.00010.0010.010.1110po

18、wer(w)pulse width (s)figure 10: single pulse power rating junction-to-case cosscrssvds=15vid=20atj(max)=150 ctc=25 c10 s0.00.11.010.0100.01000.00.010.1110100id(amps)vds(volts)figure 9: maximum forward biased safe 10 s1msdcrds(on) tj(max)=150 ctc=25 c100 s10ms40(note f)single pulsed=ton/ttj,pk=tc+pdm

19、.z jc.r jcin descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulseoperating area (note f)r jc=3c/w0.010.11101e-050.00010.0010.010.1110100zjcnormalizedtransientthermalresistancepulse width (s)figure 11: normalized maximum transient thermal impedance (note f)single pulsed=ton/ttj,pk=tc+pdm.z

20、 jc.r jcin descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulser jc=3 c/w rev 1: april 2012 page 4 of 6 aod508/aoi508 typical electrical and thermal characteristics01020304050600255075100125150powerdissipation(w)tcase(c)figure 12: power de-rating (note f)0204060800255075100125150175curren

21、tratingid(a)tcase(c)figure 13: current de-rating (note f)1101001000100001e-050.0010.1101000power(w)pulse width (s)figure 14: single pulse power rating junction-to-ta=25 c40single pulsed=ton/ttj,pk=ta+pdm.z ja.r jain descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulseambient (note h)r ja=64c/w0.0010.010.11101e-050.00010.0010.010.11101001000zjanormalizedtransientth