IRFP460中文資料

1、IRFP460中文資料IRFP460 中文資料功率場效應(yīng)管1、動態(tài) dV/ dt 額定值2、額定重復(fù)性雪崩3、中央隔離安裝孔4、快速切換5、易于并聯(lián)6、簡單的驅(qū)動要求特性：1、Vishay 公司提供的具有最佳堅(jiān)固耐用、快速切換特性的第三代場效應(yīng)管，低 導(dǎo)通電阻和成本效益的最佳組合。2、TO-247 封裝是工業(yè)和商業(yè)應(yīng)用首選的具有更高功率水平的設(shè)備，不需要使 用 TO-220 。該 TO-247 的絕緣安裝孔與 TO-218 封裝相似但又優(yōu)于 TO-218，它 還提供引腳 tomeet 的最安全規(guī)范的要求之間更大的爬電距離。注釋： a、重復(fù)性評估；最大結(jié)溫值下的有限脈沖寬度（見圖11）；b、VD

2、D = 50 V, 開始溫度 TJ = 25 C, L = 4.3 mH, RG = 25,12）；c、ISD 20 A, dI/dt 160 A/ s, VDD VDS, TJ 150 C.； d、根據(jù)情況選 1.6mm.IAS( =見 2圖0SPECIFICATIONSSPECIFICATIONS Tj = 25 C. unless otherwise notedPARAMETERPARAMETERSYMBOLSYMBOLTESTTEST CONDITIONSCONDITIONSMIN.MIN.TYP.TYP.MAX.MAX.UNITUNITStaticStaticDrait-Source

3、Drait-Source BreakdownBreakdown VoltageVoltageV VDSDSV VGSGS = = CV.ICV.ID D = = 250pA250pA500500 V VVQS *emperature*emperature CoefficientCoefficient驅(qū)山ReferenceReference toto 2525 C,loC,lo = = 1 1 mAmA0.630.63 V/CV/CGate-SourceGate-Source ThresholdThreshold VoltageVoltageVG蒯V VDSDS = = V VGSGS, , l

4、 lD D = = 250pA250pA2.02.04.04.0V VGate-SourceGate-Source LeakageLeakageGSSVGS = 20V100100nAnAVDS = 5MV,VGS=0V2525ZeroZero GateGate VohageVohage DrainDrain CurrentCurrenthssVDS = 400V,YG8 = 0VITJ = 125C250250UAUADrair-SourceDrair-Source On-StateOn-State ResistanceResistanceRDS(OO)VQS = = 1010 V Vl l

5、0 0 = = 12A12Ab b0.270.27Q QForwardForward TranscooductanceTranscooductanceV VDSDS=50V,l=50V,lD D = = 12A12Ab b1313 S SDynamicDynamicInputInput CapacitanceCapacitanceGssGss42004200OutpjtOutpjt CapacitanceCapacitanceCessCess870870ReverseReverse TransferTransfer CapacitanceCapacitanceCrssCrssV VGSGS =

6、 = 0V,0V,VDS = 25V.f=f= 1.01.0 MHz,MHz, seesee fig.fig. 5 5350350pFpFTotalTotal GateGate ChargeChargeQgQg210210Gate-SourceGate-Source ChargeChargeQe2929Gale-DrainGale-Drain ChargeChargeQgdQgdV VGSGS = = 1010 V V|D = 20A,VDS = 400Vseesee fig.fig. 6 6 andand 13136 6110110nCnCTurn-OnTurn-On DelayDelay

7、TimeTime3(on)3(on)1818RiseRise TimeTimer5959Turn-OffTurn-Off DelayDelay TimeTimetcLtcL110110FalFal TimeTimetfVDo=250VJoVDo=250VJo = = 20A20At tRG = 4.3Q. R RD D=13Q.seefig.10=13Q.seefig.10b b5858nsnsInternalInternal DramDram InductanceInductanceLD5.05.0InternalInternal SourceSource InductanceInducta

8、nceL Ls sBetweenBetween lead.lead. 6 6 mmmm (0.25(0.251 1) ) fromfrom/LI/LIpackagepackage andand centercenter ofof JIJI 聞 diedie contactcontact1313nHnHDrain-SourceDrain-Source BodyBody DiodeDiode CharacteristicsCharacteristicsContinuousContinuous Source-DrainSource-Drain DiodeDiode CurrentCurrentss2

9、020PulsedPulsed DiodeDiode ForwardForward CurrentCurrent8 8ISMMOSFETMOSFET symbolsymbolshowingshowing thethe/MLintegralintegral reversereverse4J!1E/4J!1E/p p n n junctionjunction diodediode飛之8080ABodyBody DiodeDiode VoltageVoltageVsDTjTj = = 2525o oC,lC,l5 5 = = 20A,V20A,VG Gs s = = 0V0Vb b1.81.8V V

10、BodyBody DiodeDiode ReverseReverse RecoveryRecovery TimeTime570570860860nsnsBodyBody DiodeDiode ReverseReverse RecoveryRecovery ChargeChargeQrrTj25CTj25Ct t l lF F-20A,-20A, d/dt100A/psd/dt100A/ps5.75.78.68.6pcpcForwardForward Turn-OnTurn-On TimeTimeIntrinsicIntrinsic turn-onturn-on timetime isis ne

11、gligiblenegligible (turn-on(turn-on isis dominateddominated byby L$L$ andand L“L“注釋： a、重復(fù)性評估；最大結(jié)溫值下的有限脈沖寬度（見圖11）；b、脈沖寬度 300 s; duty cycle 2 %.在沒有特殊說明的情況下典型溫度為 25 CTop4.5 VVGS 15 V 10 V 8.0 V 7.0 V6.0 V5.5 V 5.0 V Bottom 4.5 Vo26$一0 30nosoTeosoI。=20 AVcs= z100 VV VJ J)S)S 4 450 Vvc)S)S = = 1 100 V、藝/

12、Lseeest c figurercui t*130 080120160QG, Total Gate Charge (nC)20161282016128 4 42001237 06Fig.Fig. 6 6 TypicalTypical GateGate ChargeCharge vs.vs. Gate-to-SourceGate-to-Source VoltageVoltageIH10391237 08msM0 msOperation in this area limited by Rg(or0DS，Drain-to-Source Voltage (V)10)ctnou占0_Fig.Fig.

13、8 8 MaximumMaximum SafeSafe OperatingOperating AreaArea2a 10 ps尹1100 nsa -Tc = 25 C =150 C . Siaclo Pulao2 25 59123791237 09090 - - -255075100125150TCl Case Temperature (C)20Fig.Fig. 9 9 MaximumMaximum DrainDrain CurrentCurrent vs.vs. CaseCase TemperatureTemperatureFig.Fig. 11a11a - - MaximumMaximum

14、 EffectiveEffective TransientTransient ThermalThermal Impcdanco.Impcdanco. Junction-to-CaseJunction-to-Case1010心232310?10?t tv v noctangularnoctangular P PU UI IM M DurationDuration (S)(S)10105 51 26a1(OTMKrasuodsacr石 uneuj.1010Fig.Fig. 12b12b UnclampedUnclamped InductiveInductive WaveformsWaveforms

15、Fig.Fig. 12a12a UnclaUnclampedmped InducInductivetive TestTest CircuCircuitit00004 42 2(Lu) A6aullJ s-nd -6CSOTUJo606000002 200008 80000015091237 12cStarti ngTj. J unction Temperature (C)Fig.Fig. 12c12c MaximumMaximum AvalancheAvalanche EnergyEnergy vs.vs. DrainDrain CurrentCurrentFig.Fig. 13a13a BasicBasic GateGate ChargeCharge WaveformWaveformo00002 2255075100125Current sampling resistorsFig.Fig. 13b13b GateGate Charg