芯片器件簡介介紹PPT

1、芯片元器件（device） snapshot 2010-07-23 魏文confidential & proprietary 20092lsi & semiconductorlpn junctionlmos introducelmos device 特性 .lmos 2nd order effect (advanced character)agendaconfidential & proprietary 20093元素周期表p型型摻雜摻雜n型型摻雜摻雜substrate 襯底襯底confidential & proprietary 20094+14n=1n=2n=3孤立硅原子2個電子8個電子4

2、個電子s層有2個量子態(tài)p層有6個量子態(tài)1s22s22p63s23p2confidential & proprietary 20095硅原子組成晶體confidential & proprietary 20096n 型-p型 摻雜及其能帶示意圖 n型型摻雜摻雜p型型摻雜摻雜confidential & proprietary 20097pn junction （depletion layer formation）1. definition: no free carrier2. wd: na/nd3. bais: forward decrease wdconfidential & propriet

3、ary 20098the conductivity of pn junction erithe current is formed by the movement of the majority carriers.two types of movements: majority carriers- diffuse movement (擴散運動擴散運動). minority carriers drift movement（漂移運動（漂移運動).n 型型 摻雜摻雜p 型型 摻雜摻雜confidential & proprietary 20099the conductivity of pn junc

4、tion正偏導(dǎo)通電壓反偏擊穿電壓反偏reverse breakdown反向擊穿pn junction characteristic curve (伏安特性曲線伏安特性曲線)the most important characteristic of pn junction is that it allows current in only one direction.pn結(jié)的最重要特性是它的結(jié)的最重要特性是它的單向?qū)щ娦詥蜗驅(qū)щ娦浴onfidential & proprietary 200910whats mos metaloxidesemi.confidential & proprietary

5、 200911mos skeletonpn+n+vb, gndlwvsvgvd why called source/drain? can you figure out which side is source/drain in previous slice? always remember, mos is four terminal (including bulk).confidential & proprietary 200912nmos transistor_channel formation a.no channel, ids=0b.channel form, ids flow from

6、 d to sc.ids increase with vds, similar to linear resistor d.channel pinch off. ids independent of vds andsimilar to current source confidential & proprietary 200913as vds is increased:as vgs-vds vt the drain end pinch-off;at this moment, vds=vds,sat saturation voltage = vgs-vtif vds vds,sat operati

7、on in “saturation region”;if vds vdsat(vgs), the behavior is linear with slope .vgs(v)id (ua)weakinversionstrong inversionlinear regionsaturation0 0.5 1 1.5 2 2.5vds=0.1v1510 5 0vd(v)id (ua)non saturationsaturation0 0.5 1 1.5 2 2.5vgs=4vvgs=5vvgs=3vlinear region(vdsat , idsat)400300200100 0confident

8、ial & proprietary 200915wat testkey structure and test method_ vttest condition:vti_n18:vd=0.05v, vs=vb=0v, vg=0v to 0.8*1.8vmeasure vti_n18=vgid = 0.1a*(w/l)test result:vg=0.445vaabdgs vti_naa18_10_d18confidential & proprietary 200916sce (short channel effect)lwhat: short channel effect, vt decreas

9、e along with channel length.lwhy: s/d lateral diffuse(0.7 xj) and depletion extension into channel cause leff reduce.lhow: tox; nb ; xj ; vsb confidential & proprietary 200917 pt (punch through)confidential & proprietary 200918 junction breakdownconfidential & proprietary 200919body effectlwhat: vt

10、increase with vsouce - vbulklwhy: vsb increase the s/d depletion layer, which attract more electrons and cause channel inversion layer electron loss, request more gate effect.lhow: tox; nb ; confidential & proprietary 200920lwhat: gate induced drain leakage, big leakage current in drain side especial when vg d0.lwhy: gate to drain overlay area generate high field, lead to avalanche multiplication and btbt.lhow: vg; na ; vd gidlconfidential & proprietary 200921leaka