HIPIMSHIPIMS-大功率脈沖磁控濺射

HIPIMSHIPIMS大功率脈沖磁控濺射HIPIMSHIPIMS大功率脈沖磁控濺射HIPIMSHIPIMS大功率脈沖磁控濺射OverviewPresentationHipims+byHauzerWhyHighPowersputtertechnologyHipimsvs.Hipims+Coatings:TiAlN,Cr2NMachineintegrationinFlexicoat?2通過閱讀報(bào)刊，我們能增長見識，擴(kuò)大自己的知識面。HIPIMSHIPIMS大功率脈沖磁控濺射HIPIMSHIOverviewPresentationHipims+byHauzerWhyHighPowersputtertechnologyHipimsvs.Hipims+Coatings:TiAlN,Cr2NMachineintegrationinFlexicoat?2OverviewPresentationHipims+Plasmatechnologywithhigh%ofthematerialtobedepositedisionized.Gainingcontroloverstress->Controlmicrostructure/textureTocreatedefectfreecoatingswithgoodadhesion.TomakecoatingsfortoolandtriboapplicationswhichoutperformarcdepositedcoatingsToreducethermalloadofsubstrateToincreasedepositionrateofsputteringprocessWhyHighpowerpulsesputtering?3Plasmatechnologywithhigh%CapacitordischargePeakpulsepowersfromkWtoMWLowfrequency(dutycycle)PulseenergyandvoltagecanbedefinedPulseshapeisdeterminedbysystemconfigurationCablingPressureSputteringatmosphereMagnetrondesignConceptbehindHIPIMSTechnology4CapacitordischargeConceptbehHIPIMSPlasmacompositioninArN2SumofAr++Ar+++Ti++Ti+++N++N++=100%RatioofN+toN2+issignificantlyhigherinaHIPIMSdischargethanin(pulsed)DCdischarge.MorereactiveNspecies.5HIPIMSPlasmacompositioninAHIPIMSTiAlNExperimentExperimentoverviewSample :polishedM2HSSTarget :50/50at%AlTiDep.Temp. :450-520oCFilmthickness :2-3μm Fullloadinchamber,ThreefoldrotationSample#EtchingDepositionsourceconfigurationBiasvoltage1SpuHIPIMSTi2DC+1HIPIMS-75V2SpuHIPIMSTi2DC+1HIPIMS-95V3SpuHIPIMSAlTi1DC+2HIPIMS-75V1ArcArcTi2x4CARC-40V2ArcArcTi2x4CARC-70V6HIPIMSTiAlNExperimentExperim2D1H95HIPIMS-95Vbias2D1H75HIPIMS-75VbiasA70Arc-70VbiasResults-RoughnessAFM30x30μmSignificantimprovementinsurfaceroughness

72D1H952D1H75A70Results-RoughResults-RoughnessRoughnessdata8Results-RoughnessRoughnessdIonenergy

2D1H75VHIPIMS-75V2D1H95HIPIMS-95VResults-MorphologyAFM2x2μmIncreaseinionenergy(higherbias)withconstantionfluxleadstodensificationofcoatingColumnscoalescetoreducenumberofboundariesResputteringoffilmevidentatgrowingsurface9Ionenergy2D1H75V2D1H95Results–HardnessandEmodulusHardnessincreaseswithincreasingbiasoradditionofHIPIMSCathodes.NodefinitetrendforEmodulus–possibledifferencesduetochangesinMicrostructure.10Results–HardnessandEmodulResults–ScratchtestAlTietchedTietchedCriticalloadsforHIPIMSetchedsamplesclosetothoseforarcetchedSamples.NoapparentdifferenceInadhesionwithrespecttoetchingmaterial.11Results–ScratchtestAlTietcConclusionsHIPIMSTiAlNItispossibletocreateAlTiNcoatingsbyHIPIMSdepositionwithmaterialpropertiessimilartothosedepositedbycathodicarcsimilarhardnessandEmodulus.HIPIMSdepositedcoatingsshowsomepromisingbenefitsascomparedtoarcdepositedcoatingslowerroughnessHIPIMSetchingproducescomparableadhesionvaluesascomparedtometalionetchingfromanarcsource–forbothTiandAlTitargets.HIPIMStechnologyisindustriallyfeasible.12ConclusionsHIPIMSTiAlNItisModulatedPulsePower-MPP?

HighpowerpulsemagnetronsputteringtechniqueHeartoftechnologyisMulti-stepDCpulseVoltagerisetimecontroliskeytoenablingalong,stable,andhighpowerpulsedischargePulseswidthsof>200μsecupto1.5msec

HIPIMS+byHauzerprovides:ControlofthegastometalionratioIncreaseddepositionrate(higherthanHIPIMS)ImprovedtargetutilizationSmooth,verygoodadheringhardcoatingsfortoolandtriboapplications.Hipims+Technology

IntegratedMPP?Technology

13ModulatedPulsePower-MPP?HHIPIMSvs.HIPIMS+14HIPIMSvs.HIPIMS+14IntegratedMPP?Technology-ModulatedPulsePowerMulti-stepvoltagepulseFirststep–ignitionoflowpowerdischargeSecondstep–lowpowerdischargeThirdstep–transientstagefromlowpowerdischargetohighpowerdischargeFourthstep–highpowerdischargeHIPIMS+TechnologyVVLPVHP12340t0t1t2t3t4(1)VLP/(t1-t0)(3)(VHP-VLP)/(t3-t2)timet515IntegratedMPP?Technology-MHipims+Pulse16Hipims+Pulse16Hipims+Pulsingpossibilities

MultilayerstructureofCrNfilm,sputteredwithdifferentvoltagepulseshapes(1)and(2).TimeT1(5s,10s,15s)Rep.rate160HzTimeT2(5s,10s,15s)Rep.rate50HzVSiTime1500μs1500μs700μs700μs150ms600540112217Hipims+PulsingpossibilitiesProvideanadditionalconstantvoltagepowersupply,whichcansupplytherequiredpeakcurrentattherequiredconstantvoltage.(Archandling)SimpleSolution:usecapacitorasadditionalCV-powersupply.HauzerPatent:electronicswitchingforafastinterruptionofthearccurrent,capabletohandlethecurrentofthecapacitordischargecircuit.Withcapacitor80AWithoutcapacitorHipims+Biasissues18ProvideanadditionalconstantHipims+Hipims+Flexicoat1000Tabledia=650mmCoatingzoneheight=650mmFullloadCoatingtemperature=520°CTargetcomposition50/50at%Ti+etching–CARCcathodesAr+etching–plasmasourceHIPIMS+TiAlN19Hipims+Hipims+Flexicoat1000TaTi+ionetching(arc)+DCsputterTi+ionetching(arc)+ArcTi+ionetching(arc)+HIPIMS+Ar+etching+HIPIMS+HIPIMS+TiAlNexperimentoverview20Ti+ionetching(arc)+DCspuHIPIMS+ScratchsummaryArcetch+UBMArcetch+HIPIMS+Arcetch+ArcAretch+HIPIMS+80N100N100N100NHVPL(20mN)3415S=4.08μmRa=0.050μmHVPL(20mN)3311S=3.52μmRa=0.143μmHVPL(20mN)3150S=2.75μmRa=0.143μmHVPL(20mN)2874S=4.00μmRa=0.101μm21HIPIMS+ScratchsummaryArcetcTiAlNDepositionratenormalizedtoonebank(4xCARC)ofarcsourcesAveragepowerforUBMandHipims+=10kW22TiAlNDepositionratenormalizTiAlNHIPIMS+conclusionsDensecoatingswithdensemicrostructuresimilartoarccoatingscanbeproducedwithHIPIMS+technology.Adhesioniscomparabletoarccoatings(ArgonetchingandHIPIMS+forcoating).Ravalue2to3timesbetterthanArc(smoothcoating)Comparabledepositionratetoarc(14kW).CoatinghasbeenfoundtooutperformOEMbenchmarkforstainlessmillingby30%.23TiAlNHIPIMS+conclusionsDenseHIPIMS+Cr2NHarderandmorewearresistantthanCrNHasbetteroilwettabilitythanCrN–lowerfrictionToolMouldingdiesFormingtoolsLowtemperaturecoatings<250°CTemperaturesensitivesteelsPlasticsAimofHipims+coatingsLowertemperaturedeposition–lessthermalloadingMorecontroloverstressandmicrostructureNoposttreatmentneededascomparedtoarccoatings24HIPIMS+Cr2NHarderandmoreweHIPIMS+Cr2NMicrostructure25HIPIMS+Cr2NMicrostructure25HardnessvsPeakPowerDensity26HardnessvsPeakPowerDensityCr2NComparisonofHipims+andclosedfieldUBMsputtering

Ibias-ave(A)Depositionrate(μm/hr)HIPIMS+(208W/cm2)3,70,87DC(closedfieldconfiguration)120,67ThermalloadingwithHipims+technologyislowerthanforDC

canhavehigherdepositionratewithHipims+TargetutilizationispoorforhighUBMcoilcurrentsFullfaceerosionwithHIPIMS+depositionTsubstrate=250°C27Cr2NComparisonofHipims+andConclusionsCr2NHIPIMS+Relativelylowlossofdepositionrateaspeakpowerdensityincreases.Lowtemperaturecoatingcanbedeposited.Eliminateposttreatmentaftercoating.Suspectthatincreaseinmetalion/neutralratioisresponsibleforrefinementofmicrostructureatconstantbiasvoltageItispossibletotailorfilmstress.28ConclusionsCr2NHIPIMS+RelatiIndustrialrequirements29Industrialrequirements29ConclusionsHIPIMS+technologyisavailableandhasbeenintegratedintoHauzerFlexicoat1000andFlexicoat850.Hauzeriscurrently