半導(dǎo)體封裝制程與設(shè)備材料知識介紹-FE.ppt課件

1、半導(dǎo)體封裝制程與設(shè)備材料知識簡介Prepare By：William Guo 2007 . 11 Update半導(dǎo)體封裝制程概述半導(dǎo)體前段晶圓wafer制程半導(dǎo)體后段封裝測試封裝前段（B/G-MOLD）封裝后段（MARK-PLANT）測試封裝就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導(dǎo)線架上分離而予以包覆包裝測試直至IC成品。半 導(dǎo) 體 制 程Oxidization(氧化處理)Lithography(微影)Etching(蝕刻)Diffusion Ion Implantation(擴散離子植入)Deposition(沉積)Wafer Inspection(晶圓檢

2、查)Grind & Dicing(晶圓研磨及切割)Die Attach(上片)WireBonding(焊線)Molding(塑封) Package(包裝)Wafer Cutting(晶圓切斷)Wafer Reduce (晶圓減薄)Laser Cut & package saw(切割成型)Testing(測試)Laser mark(激光印字)IC制造開始前段結(jié)束后段封裝開始製造完成封 裝 型 式 (PACKAGE)Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100mi

3、les)8 64DIPDual In-linePackagePlastic2.54 mm(100miles)1 direction lead325SIPSingle In-linePackage封 裝 型 式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic2.54 mm(100miles)1 directionlead1624ZIPZigzagIn-linePackagePlastic1.778 mm(70miles)20 64S-DIPShrinkDual In-linePackage封 裝 型

4、 式 Through HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)half-size pitch in the width direction2432SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54 mm(100miles)PBGAPin GridArray封 裝 型 式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic1.27 m

5、m(50miles)2 direction lead8 40SOPSmallOutlinePackagePlastic1.0, 0.8, 0.65 mm4 direction lead88200QFPQuad-FlatPack封 裝 型 式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27, 0.762 mm(50, 30miles)2, 4 direction lead2080FPGFlatPackageof GlassCeramic1.27,1.016, 0.762 mm(50, 40, 30 m

6、iles)2040LCCLeadlessChipCarrier封 裝 型 式 SurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27 mm(50miles)j-shape bend4 direction lead18124PLCCPlastic LeadedChip CarrierCeramic0.5 mm32200VSQFVerySmallQuadFlatpackAssembly Main ProcessDie Cure(Optional)Die BondDie SawPlasmaCard AsyMemo

7、ry TestCleanerCard TestPacking for OutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUV Cure(Optional)Laser markPost Mold CureMoldingLaser CutPackage SawWire Bond SMT(Optional)半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分PROCESSVENDORMODELSMT - PRINTERDEKHOR-2ISMT CHIP MOUNTSIMENSHS-60TAPINGNITTODR3000-IIIINL

8、INE GRINDER & POLISHACCRETECHPG300RMSTANDALONE GRINDERDISCO 8560DETAPINGNITTOMA3000WAFER MOUNTERNITTOMA3000DICING SAWDISCODFD 6361TSKA-WD-300TPROCESSVENDORMODELDIE BONDHITACHIDB700ESECESEC2007/2008ASMASM889898CURE OVENC-SUNQDM-4SWIRE BONDERK&SK&S MAXUM ULTRASKWUTC-2000ASMEagle60PLASMA CLEANMARCHAP10

9、00TEPLATEPLA400MoldTOWAYPS-SERIESASAOMEGA 3.8半導(dǎo)體設(shè)備供應(yīng)商介紹-前道部分常用術(shù)語介紹SOP-Standard Operation Procedure 標準操作手冊WI Working Instruction 作業(yè)指導(dǎo)書 PM Preventive Maintenance 預(yù)防性維護FMEA- Failure Mode Effect Analysis 失效模式影響分析SPC- Statistical Process Control 統(tǒng)計制程控制DOE- Design Of Experiment 工程試驗設(shè)計IQC/OQC-Incoming/Outi

10、ng Quality Control 來料/出貨質(zhì)量檢驗MTBA/MTBF-Mean Time between assist/Failure 平均無故障工作時間CPK-品質(zhì)參數(shù)UPH-Units Per Hour 每小時產(chǎn)出 QC 7 Tools ( Quality Control 品管七工具 ) OCAP ( Out of Control Action Plan 異常改善計劃 ) 8D ( 問題解決八大步驟 ) ECN Engineering Change Notice ( 制程變更通知 ) ISO9001， 14001 質(zhì)量管理體系前道后道EOLWire Bond引線鍵合Mold模塑Las

11、er Mark激光印字Laser Cutting激光切割EVI產(chǎn)品目檢 SanDisk Assembly Process Flow SanDisk 封裝工藝流程 Die Prepare芯片預(yù)處理ie Attach芯片粘貼Wafer IQC來料檢驗Plasma Clean清洗Plasma Clean清洗Saw Singulation切割成型 SMT表面貼裝PMC模塑后烘烤SMT（表面貼裝）-包括錫膏印刷(Solder paste printing),置件(Chip shooting),回流焊(Reflow),DI水清洗(DI water cleaning),自動光學(xué)檢查(Automatic op

12、tical inspection),使貼片零件牢固焊接在substrate上StencilSubstrateSolder paste pringtingChip shootingReflowOvenDI water cleaningAutomatic optical inpectionCapacitorDI waterCameraHot windNozzlePADPADSolder pasteDie Prepare(芯片預(yù)處理) To Grind the wafer to target thickness then separate to single chip-包括來片目檢(Wafer In

13、coming), 貼膜(Wafer Tape),磨片(Back Grind),剝膜(Detape),貼片(Wafer Mount),切割(Wafer Saw)等系列工序,使芯片達到工藝所要求的形狀,厚度和尺寸,并經(jīng)過芯片目檢(DVI)檢測出所有由于芯片生產(chǎn),分類或處理不當造成的廢品.Wafer tapeBack GrindWafer DetapeWafer Saw Inline Grinding & Polish - Accretech PG300RM Transfer Coarse Grind 90%Fine Grind 10% Centrifugal Clean Alignment & C

14、entering Transfer Back Side Upward De-taping Mount Key Technology: 1. Low Thickness Variation: +/_ 1.5 Micron2. Good Roughness: +/- 0.2 Micron3. Thin Wafer Capacity: Up to 50 Micron4. All-In-One solution , Zero Handle Risk2.Grinding 相關(guān)材料A TAPE麥拉B Grinding 砂輪C WAFER CASSETTLE工藝對TAPE麥拉的要求：1。MOUNTNo de

15、lamination STRONG2。SAW ADHESIONNo die flying offNo die crack工藝對麥拉的要求：3。EXPANDINGTAPE Die distanceELONGATION Uniformity 4。PICKING UPWEAKADHESIONNo contamination3.Grinding 輔助設(shè)備A Wafer Thickness Measurement 厚度測量儀 一般有接觸式和非接觸式光學(xué)測量儀兩種；B Wafer roughness Measurement 粗糙度測量儀 主要為光學(xué)反射式粗糙度測量方式；4.Grinding 配套設(shè)備A T

16、aping 貼膜機B Detaping 揭膜機C Wafer Mounter 貼膜機 Wafer Taping - Nitto DR300IICut TapeTaping AlignmentTransfer Transfer Back Key Technology: 1. High Transfer Accuracy: +/_ 2 Micron2. High Cut Accuracy : +/- 0.2 mm3. High Throughput : 50 pcs wafer / Hour4. Zero Void and Zero Wafer Broken DetapinglWafer moun

17、tWafer frame晶 圓 切 割 (Dicing)Dicing 設(shè)備:A DISCO 6361 系列B ACCERTECH 東京精密AW-300TMain Sections IntroductionCutting Area: Spindles (Blade, Flange, Carbon Brush), Cutting Table, Axes (X, Y1, Y2, Z1, Z2, Theta), OPCLoader Units: Spinner, Elevator, Cassette, Rotation ArmBlade Close-ViewBladeCutting WaterNozz

18、leCooling Water NozzleDie Sawing Disco 6361 Key Technology:1. Twin-Spindle Structure.2. X-axis speed: up to 600 mm/s. 3. Spindle Rotary Speed : Up to 45000 RPM.4. Cutting Speed: Up to 80mm/s.5. Z-axis repeatability: 1um.6. Positioning Accuracy: 3um . RearFrontA Few ConceptsBBD (Blade Broken Detector

19、)Cutter-set: Contact and OpticalPrecision InspectionUp-Cut and Down-CutCut-in and Cut-remain晶 圓 切 割 (Dicing)Dicing 相關(guān)工藝A Die Chipping 芯片崩角B Die Corrosive 芯片腐蝕C Die Flying 芯片飛片Wmax , Wmin , Lmax , DDY ,DY 規(guī)格DY 0.008mmWmax 0.070mmWmin 0.8*刀厚Lmax 1000,4 90/1004,8,11 9011,15IC type loop typeCapillary Go

20、ld Wire Gold Wire Manufacturer (Nippon , SUMTOMO , TANAKA. ) Gold Wire Data ( Wire Diameter , Type , EL , TS)焊線(Wire Bond)3.Wire Bond 輔助設(shè)備A Microscope 用于測loop heightB Wire Pull 拉力計（DAGE4000）C Ball Shear 球剪切力計D Plasma 微波/等離子清洗計Ball SizeBall Thickness 單位: um，Mil 量測倍率: 50X Ball Thickness 計算公式 60 um BPP

21、 1/2 WD=50% 60 um BPP 1/2 WD=40%50%Ball SizeBall Size & Ball ThicknessLoop Height 單位: um，Mil 量測倍率: 20XLoop Height 線長Wire Pull 1 Lifted Bond (Rejected) 2 Break at neck (Refer wire-pull spec) 3 Break at wire ( Refer wire-pull spec) 4 Break at stitch (Refer stitch-pull spec) 5 Lifted weld (Rejected)Bal

22、l Shear 單位: gram or g/mil Ball Shear 計算公式 Intermetallic（IMC有75%的共晶,Shear Strength標準為6.0g/mil。SHEAR STRENGTHBall Shear/Area (g/mil) Ball Shear = x; Ball Size = y; Area = (y/2) x/(y/2) = z g/mil等離子工藝Plasma Process氣相-固相表面相互作用 Gas Phase - Solid Phase InteractionPhysical and Chemical分子級污染物去除Molecular Lev

23、el Removal of Contaminants30 to 300 Angstroms可去除污染物包括 Contaminants Removed難去除污染物包括 Difficult Contaminants Finger PrintsFluxGross ContaminantsOxidesEpoxySolder MaskOrganic ResiduePhotoresistMetal Salts (Nickel Hydroxide)Plasma Clean March AP1000 Key Technology:1. Argon Condition, No oxidation.2. Vacuum Pump dust collector.3. Clean Level : blob Test Angle 8 Degree.PlasmaPCB SubstrateDie+Electrode+ArWell Cleaned with Plasma 80 o 8 o Organic Contamination vs Contac