專業(yè)外語專外句子翻譯

1、1.It is, nevertheless, a high tribute to the skill and care of many experimenters that, in spite ofthis, semiconductors had been recognized as a distinct class of substances and their main properties appreciated long before a comprehensive theory was available to account for them.然而，（早期的工作地）歸功于許多實驗工

2、作者的實驗技巧和細(xì)心，盡管這樣，半導(dǎo)體被確認(rèn)是一種不同類別的物質(zhì)，并且遠(yuǎn)在獲得深入的理論進(jìn)行解釋之前人們就已經(jīng)了解了它的主要性質(zhì)。然而，盡管如此，人們還是認(rèn)識到了半導(dǎo)體是一類特殊的物質(zhì)，并在可以用來說明半導(dǎo)體各種性質(zhì)的深入理論出現(xiàn)之前，早已注意到了它們的一些主要性質(zhì)。這一事實說明早期的實驗工作者們的實驗技巧和細(xì)心是很值得贊賞的。2.These effects are now known to be due to oxide films or actual gaps separating the individualcrystals but led to the ms titanium and

3、zirconium once being listed as semiconductors.我們現(xiàn)在知道這些效應(yīng)是由氧化物膜或?qū)嶋H存在的那些將各個單晶的間隙（各單晶之間的界面）造成的，但是卻導(dǎo)致一度將金屬鈦和鋯劃分到半導(dǎo)體中。3.It must be admitted, however, that no infallible criterion was available till the quantumtheory of solids gave an understanding of the reasons for the various properties observed.但是，必須承

4、認(rèn)直到固體量子理論對觀察到的大量的性質(zhì)給出合理的解釋，我們才能得到確實可靠的標(biāo)準(zhǔn)。4.A review of this early work has been given by K. Lark-Horowitz together with a very extensivebibliography containing over 350 references. Earlier reviews by B' Gudden also deal extensively with this phase and discuss in some detail the problems of ident

5、ifying semiconductors.霍洛維茨對這些早期工作進(jìn)行了綜述，并列出了一個包含超過 350 條參考文獻(xiàn)的內(nèi)容非常廣泛的書目。古登的更早期的工作也對這一階段的工作有廣泛的涉獵，并且就鑒別半導(dǎo)體的一些問題進(jìn)行了相當(dāng)詳細(xì)的討論。5.The latter, which is generally known as the carrier mobility, and which we shall define moreprecisely later generally tends to decrease as the temperature is raised, especially at

6、 the highertemperatures, and this accounts for the decrease in conductivity of mtemperature.s with increasing后者通常被稱為載流子遷移率，在后面還會給出精確的定義，它通常會隨著溫度的升高而呈現(xiàn)下降的趨勢，特別是在高減小。況下，這也解釋了為什么金屬的電導(dǎo)率隨溫度的升高而6.The substances concerned were mainly mlic oxides and sulphides and the defectsemiconductors were those with a

7、mlic content less than that corresponding tostoichiometric composition, i.c. oxidized compounds.所涉及的物質(zhì)主要是金屬氧化物和硫化物，欠缺半導(dǎo)體是那些金屬的含量小于相應(yīng)的理想配比成分（化學(xué)計量組分相對應(yīng)的含量）的物質(zhì)，也就是被氧化的化合物。7.The importance of this work was in showing the vital part played by small deviations fromstoichiometric composition in determining

8、 the properties of compound semiconductors.這項工作的重要性在于指出對理想化學(xué)配比的微小偏離在確定化合物半導(dǎo)體的性質(zhì)中所起的的作用。8.Although they are not strictly semiconductors but insulators, mention must be made of thelarge amount of research carried out by R. W. Pohl and his collaborators on the alkali halides, since this helped greatly

9、to clarify many of the properties of semiconductors.盡管嚴(yán)格地說它們不是半導(dǎo)體而是絕緣體，但是我們必須要提到波爾和他的合作者們在堿金屬鹵化物方面所做的大量的研究，因為他們的工作對我們澄清半導(dǎo)體的一些性質(zhì)有很大幫助。9.Much of the uncertainty of the early work on semiconductors arose through a failure todifferentiate between effects, which arise in the bulk of the material, and tho

10、se, which are characteristic of the surface or of the interface between two different materials.由于不能正確將材料體內(nèi)產(chǎn)生的效應(yīng)和材料表面或不同材料界面間的固有效應(yīng)區(qū)來，早期對半導(dǎo)體的研究中產(chǎn)生了許多不確定性。10.The use of single crystals has enabled not only the separation of the bulk and surfaceproperties but has also enabled the surface and the interf

11、ace between two types ofsemiconductor, or between a semiconductor and a m, to be studied in much greater detail.單晶的使用不但可以把體內(nèi)性質(zhì)和表面性質(zhì)區(qū)來，而且還能更詳細(xì)地研究表面和兩種半導(dǎo)體之間的界面或者半導(dǎo)體和金屬之間的界面的性質(zhì)。11.More recently the study of amorphous semiconductors has led to a fuller appreciation ofthose properties, such as high carri

12、er mobility, that depend principally on the quality of thecrystals being studied and those more fundamental properties which do not depend on long-range order.最近對非晶態(tài)半導(dǎo)體的研究使我們對那些主要依賴所研究晶體的質(zhì)量的性質(zhì)如高的載流子遷移率以及那些不依賴于長程有序的更基本的性質(zhì)有了更充分的認(rèn)識。12.The photoconductive properties of selenium, and of copper oxide, hav

13、e been used toprovide exposure meters for photography and photocells, which are used in the film industryfor transforming the markings on the sound track into electric currents for implication and reproduction by loud-speakers.硒和氧化銅的光電導(dǎo)性質(zhì)可以用來提供攝影技術(shù)用的表和光電管，光電管在工業(yè)中是用來將音軌上的信號轉(zhuǎn)換成電流，以便用揚聲器將它放大和再生 。13.The

14、 discovery that a fine wire, or cats whisker, in contact with a crystal of semiconductingmaterial made an excellent rectifier for high-frequency currents led to a great increase in thesensitivity of radio receivers, and this type of device was widely used in the early days of broadcasting.將半導(dǎo)體材料晶體和細(xì)

15、金屬絲或貓須連在一起就是一個非常好的高頻電流整流器，這一發(fā)現(xiàn)極大提高了無線電的靈敏性，這一類型的器件在早期被廣泛應(yīng)用到廣播中。14.The modern successor to the transistor is the integrated circuit (IC.) in which manytransistors and their associated components such as resistors, capacitors etc. are produced by controlled diffusion of impurities into a small chip of

16、 silicon.現(xiàn)代的晶體管的繼任者是集成電路。集成電路中的許多晶體管和與它相關(guān)聯(lián)的一些元件如電阻、電容等是通過擴(kuò)散雜質(zhì)進(jìn)入一個小的硅片制作的。15.Here these forces are supposed to attract the electron strongly if it moves outside theboundary, and in the simplest form of the theory it is assumed that they set up an impenetrable potential barrier which holds the electro

17、ns in the solid.這里我們期待這種力場在電子運動出界面時對它產(chǎn)生一個很強(qiáng)的吸引力，在最簡單的理論模型中，假設(shè)它建立了一個不能穿過的勢壘，將縛在固體中。16.In Summerfields theory, the allowed energy levels for the valence electrons of a crystal ofmacroscopic dimensions lie very close together and their values extend from nearly the bottom of the potential trough in whi

18、ch the electrons move to indefinitely high values.在薩摩菲爾德的理論中，對宏觀尺度晶體中的價電子而言，它們的能級靠的很近，而且能級的值幾乎從電子在其中運動的勢阱底部一直延伸到無窮大。17.If now we have N atoms in a crystal, and we assume the crystal to be expanded so that thelattice spacing becomes very great, then the allowed energy levels will be just the atomic e

19、nergy levels which, for the moment, we shall assume to be non-degenerate, i.e. each has aseparate energy.如果我們現(xiàn)在有一個 N 個原子的晶體，而且假設(shè)晶體不斷膨脹以至于晶格之間的間隔變的非常大。于是的能級恰好是原子的能級，我們暫時假設(shè)原子的能級是非簡并化的，也即是說每個能級有各自的能量。18.This not only explains why inner electrons do not contribute to conduction but it gaveWilson the clu

20、e to the essential deference between msemiconductors on the other.s on the one hand and insulators and這不但解釋了為什么內(nèi)層電子對電導(dǎo)沒有貢獻(xiàn)，而且在研究一方面是金屬和絕緣體，另一方面是金屬和半導(dǎo)體的本質(zhì)差別方面為威爾遜提供了線索。19.Most of the substances with which we shall be concerned have such a structure, but maynot always consist of large single crystals

21、but of aggregates of very small crystals with random orientation.要涉及的大部分物質(zhì)都有這樣的結(jié)構(gòu)，但是并不是都由大的單晶塊組成。而是由非常小的隨機(jī)取向的晶體在一起組成的。20.The number of excited electrons would increase with temperature in a manner governed bya process having an activation energy, of the order of E and we should expect a rapid increa

22、se of the conductivity with temperature.被激發(fā)的電子的數(shù)目將會隨著溫度的升高而增加，在一定程度上，這是由一個獲得與 E 相同量級的激活能的過程的，因此我們可以預(yù)期電導(dǎo)率隨著溫度的升高而快速增加。21.As we shall also see later the effect of very small amounts of impurity can have a markedeffect on this activation energy so that materials which have considerably greater values o

23、f AE may behave as semiconductors when they contain certain active impurities.后面我們還會看到數(shù)量很少的雜質(zhì)會對激活能產(chǎn)生非常顯著的影響以至于具有相當(dāng)大激活能 E 值的材料，當(dāng)它們含有某些“活性”雜質(zhì)時可能會表現(xiàn)出半導(dǎo)體的行為（性質(zhì)）。22.If we assume that the variation with T of the mobility of electrons and holes in an electricfield is small compared with the variation in th

24、e exponential factor in (4) then we have for the conductivity , which is then simply proportional to the number of carriers, a variation of theform.如果我們假設(shè)在電場中電子和空穴的遷移率隨溫度的變化與式(4)中指數(shù)因子的變化相比很小，那么我們就得到電導(dǎo)率 ，這個電導(dǎo)率僅僅正比于載流子的數(shù)量，有如下的一個變化的形式。23.In many instances, it is found that the energy required to excite

25、 an electron into theconduction band from a donor level is so small that the electrons from all, the available donor levels are excited and are in the conduction band at room temperature.在許多例子中人們發(fā)現(xiàn)將一個電子從施主能級中激發(fā)到導(dǎo)帶所需的能量太小了，以至于在室溫時，所有可用的施主能級上的電子都被激發(fā)進(jìn)入到導(dǎo)帶中了。24.Hence, for a semiconductor in this conditi

26、on thewill increase with increasingtemperature, till a temperature is reached at which the intrinsic electrons begin topredominate, when it will begin to fall exponentially in the manner once thought to be characteristic if semiconductors.因此這個條件下的半導(dǎo)體，它的電阻將會隨著溫度的升高而增加，直到溫度升高到本征電子占優(yōu)勢，此時電阻將開始以指數(shù)的方式下降，這

27、種性質(zhì)曾一度被認(rèn)為是半導(dǎo)體的特性。25.When light frequency is high enough so that a quantum absorbed by a valence electron hassufficient energy to raise it from the top of the full band to the conduction band, extra carriers are created and these lead to increased conductivity.當(dāng)光的頻率足夠高時一個價電子吸收的量子（光子）就有足夠的能量能夠使電子從滿帶的頂

28、端躍遷到導(dǎo)帶中，這樣就會產(chǎn)生額外的載流子從而使電導(dǎo)率增加。26.It will be clear from the above calculation that if germanium is to be intrinsic at roomtemperature it must be free from impurities giving levels near the conduction band to better than one part in 109.從上面的計算我們可以清楚如果室溫下鍺處于本征狀態(tài)，那么它含有能夠提供靠近導(dǎo)帶能級的雜質(zhì)的濃度一定大于（原子濃度的）109 分之一（&

29、lt;10-9）。那么它含有的雜質(zhì)的濃度一定大于（原子濃度的）109 分之一（<10-9）。這些雜質(zhì)能夠提供靠近導(dǎo)帶的能級。27.It is anticipated that the reader will have a "hands-on" involvement with etching and opticalmicroscopy, but it is expected that with X-ray topography, the appropriate specialist will perform the work and help interpret th

30、e results.可以預(yù)期讀者將會有親自動手進(jìn)行光刻（實驗）和光學(xué)顯微鏡使用的機(jī)會，但是至于 X 射線形貌技術(shù)，我們期望適當(dāng)?shù)膩硗瓿蛇@個工作并幫助對結(jié)果做出解釋。28.It turns out, however, that the minority carriers are nevertheless, of great importance, asmany electronic processes in semiconductor technology are controlled by the minority carriers,the density of which, beinall,

31、 may be more readily varied.然而盡管如此，事實證明，少數(shù)載流子仍然起著很重要的作用，因為在半導(dǎo)體工藝中一些電子的過程都是由少數(shù)載流子的，少數(shù)載流子的濃度小，可以更容易地改變。29.One to one correlations between dislocations and emitter to collector shorts in bipolartransistors, as well as avalanche sites in photo detectors have been made, whereas process induced stacking f

32、aults are known to reduce the storage time in MOS memory devices.位錯與雙極性晶體管中發(fā)射極到集電極的短路以及位錯與光探測器中雪崩點的一對一的對應(yīng)關(guān)系已經(jīng)被找出，然而已經(jīng)知道產(chǎn)生堆垛層錯的過程會減少 MOS設(shè)備的時間。30.If defect characterization is worthy of a philosophy, then it must be "do not use overkill", orin other words use the simplest technique possible

33、to obtain the necessary information and it first.如果缺陷分析是一門有價值的科學(xué)，那么就不要過度的使用它，或者換句話說就是盡可能和優(yōu)先使用最簡單的方法獲得必要的信息。31.When a new etchant is needed, it is almost always formulated by utilizing the experiencegained from the prior etching of similar materials and additional trial and error experimentation, rather than the application of chemical theory