實(shí)驗(yàn)9內(nèi)存泄漏

1、Lab 6: 內(nèi)存泄漏目標(biāo)· 使用 Target Control 應(yīng)用工具來(lái)識(shí)別內(nèi)存泄漏估計(jì)時(shí)間: 30 minutes練習(xí)1 虛擬內(nèi)存泄漏Ø 增加內(nèi)存泄漏（LeakingMemory）工程到開發(fā)環(huán)境中1. 拷貝內(nèi)存泄漏（ LeakingMemory ）目錄到OS design目錄 D:WINCE500PBWorkspacesTrainingOSDesign.2. 選擇Project | Insert | Existing Subproject3. 選擇 TrainingOSDesign | LeakingMemory . 4. 選擇 LeakingMemory.pbpxm

2、l 并點(diǎn)擊 Open. PB將添加此工程到現(xiàn)有的OSDesign中5. 配置 LeakingMemory 工程，設(shè)置其為excluded from the image and always build and link as debug, 類似于 Lab 2-2 練習(xí)16. 右擊 LeakingMemory 工程，選擇 Build Current Project.Ø 調(diào)試程序7. 選擇 Target | Run Programs ，點(diǎn)擊LeakingMemory，再點(diǎn)擊RUN8. 觀察模擬器的輸出，下列消息將出現(xiàn)在模擬器的屏幕上: Note這個(gè)對(duì)話框用來(lái)阻止應(yīng)用程序繼續(xù)運(yùn)行（在沒有實(shí)

3、際的斷點(diǎn)情況下），從而可以使用內(nèi)存工具來(lái)觀測(cè)內(nèi)存情況. 這個(gè)對(duì)話框在內(nèi)存保留之前設(shè)置了斷點(diǎn)，允許我們得到內(nèi)存使用的初始情況，從而可以和后續(xù)的內(nèi)存情況進(jìn)行對(duì)比。9. 選擇 Target | CE Target Control 。The Windows CE Command Prompt 窗口將顯示出來(lái)10. 在 Windows CE> 提示符中, 輸入mi full. 此時(shí)將顯示設(shè)備上運(yùn)行的所有進(jìn)程的內(nèi)存信息.11. 定為到 LeakingMemory.exe 進(jìn)程的內(nèi)存信息處.12. 利用下列信息研究虛擬內(nèi)存的內(nèi)容:CharacterDefinition<blank>A bl

4、ank space indicates a virtual page that is not currently allocated. Does not require a physical page.-Reserved but not in use. Indicates a virtual page that is currently allocated but not mapped to any physical memory. Does not require a physical page.CCode pages in ROM. Does not require a physical

5、page.cCode pages in RAM. Requires a physical page.SIndicates a virtual page that holds a stack. Requires a physical page.PPeripheral memory (pages used to map target device memory by using VirtualAlloc). Indicates a virtual page that is used to map a range of hardware addresses. Does not require a p

6、hysical page. Peripheral memory may include frame buffer memory.WIndicates a virtual page that holds read-write data. Requires a physical page. Read-write pages include global variables as well as dynamically allocated memory.OIndicates a virtual page that is used by the object store. Requires a phy

7、sical page. Should only appear in the Filesys process.?Contents unknown.rRead-only data pages in RAM. Requires a physical page. Read-only data primarily comes from data items that are declared as a const type in the source code.RRead-only data pages in ROM. Does not require a physical page. Read-onl

8、y data primarily comes from data items that are declared as a const type in the source code. Note: For CPUs such as ARM and SHx that do not distinguish between read-only and executable code pages in hardware, use R(r) to represent both data and code. 13. 拷貝此時(shí)LeakingMemory 進(jìn)程的內(nèi)存信息到一個(gè)臨時(shí)的文本文件中，以便于和稍后經(jīng)過

9、變化的內(nèi)存信息進(jìn)行比較.14. 在模擬器窗口中，點(diǎn)擊 OK . 此時(shí)應(yīng)用程序?qū)⑦\(yùn)行并執(zhí)行相關(guān)的動(dòng)作.15. 下圖是執(zhí)行之后的窗口16. 在 Windows CE> 提示符中, 再次輸入 mi full. 此時(shí)將顯示設(shè)備上所有進(jìn)程當(dāng)前的內(nèi)存信息.17. 將此時(shí) 進(jìn)程的內(nèi)存信息與前面的進(jìn)行比較.18. 點(diǎn)擊 OK 使得應(yīng)用程序退出.分析BeforeAfterMemory usage for Process 80fce840: 'LeakingMemory.exe' pid 8Slot base 12000000 Section ptr 83d2e000 12000000(1)

10、: -r- 12010000(0): -cW 12020000(0): -SSS 12030000(0): W- 12050000(0): - 13ed0000(0): - 13ff0000(0): -ccPage summary: code=3(3) data r/o=0 r/w=3 stack=3 reserved=377Memory usage for Process 80fce840: 'LeakingMemory.exe' pid 8Slot base 12000000 Section ptr 83d2e000 12000000(1): -r- 12010000(0): -cW 12020000(0): -SSS 12030000(0): W- 12050000(0): - 12060000(0): WWWWWWWWWWWWWWWW 12070000(0): WWWWWWWWWWWWWWWW 13ed0000(0): - 13ff0000(0): -ccPage summary: code=3(3) data r/o=0 r/w=35 stack=3 reserved=377通過CE Target Control 工具的輸出顯示有128