通信與電子信息專業(yè)英語 課件 Unit 3 Integrated Circuits

Unit3IntegratedCircuits3.1Introduction

3.2PNJunctionandDiode

3.3Transistor

3.4FPGA23.1IntroductionWordsandExpressionsBackgroundsText3WordsandExpressionsmicroelectronic

adj.微電子（學(xué)）的microelectronicsandsolid-stateelectronics微電子學(xué)與固體電子學(xué)miniaturize

vt.使微型化；成為縮影同義詞：scaledown,shrinksubstrate n.基底；底物；底層；基層semiconductor n.半導(dǎo)體；半導(dǎo)體裝置conductor導(dǎo)體，insulator絕緣體，conductivity電導(dǎo)率WordsandExpressionsIntegratedcircuit(IC),alsocalledmicroelectroniccircuit,microchip,orchip,anassemblyofelectroniccomponents,fabricatedasasingleunit,inwhichminiaturizedactivedevices(e.g.,transistorsanddiodes)andpassivedevices(e.g.,capacitorsandresistors)andtheirinterconnectionsarebuiltuponathinsubstrateofsemiconductormaterial(typicallysilicon).集成電路（IC），也被稱為微電子電路、微芯片或芯片，集成了多個(gè)電子元件，制造為單個(gè)單元，其中微型有源器件（如晶體管和二極管）和無源器件（如電容器和電阻器）及其互連都建立在半導(dǎo)體材料（通常為硅）的薄襯底上。5WordsandExpressionsmicroscopic adj.極小的；微小的；需用顯微鏡觀察的OpticalMicroscope 光學(xué)顯微鏡ElectronMicroscope 電子顯微鏡STM:ScanningTunnelingMicroscope 掃描隧道顯微鏡electron

n.電子electron-holepairs

電子空穴對WordsandExpressionsbarrier n.墊壘；障礙；屏障；阻力potentialbarrier 勢壘barrierlayer 阻擋層Schottkybarrier 肖特基勢壘crystal

n.結(jié)晶；晶體；晶振singlecrystal/monocrystal 單晶polycrystal 多晶7WordsandExpressionsShockley’steam(includingJohnBardeenandWalterH.Brattain)foundthat,undertherightcircumstances,electronswouldformabarrieratthesurfaceofcertaincrystals,andtheylearnedtocontroltheflowofelectricitythroughthecrystalbymanipulatingthisbarrier.8WordsandExpressionsvacuumtube 真空管transistor n.晶體管；三極管Controllingelectronflowthroughacrystalallowedtheteamtocreateadevicethatcouldperformcertainelectricaloperations,suchassignalamplification,thatwerepreviouslydonebyvacuumtubes.Theynamedthisdeviceatransistor,fromacombinationofthewordstransferandresistor.9WordsandExpressionsthermostat n.恒溫器；溫度自動調(diào)節(jié)器apieceofequipmentthatautomaticallyregulatingthetemperatureinabuilding,machine,orengine.Forexample,atemperaturesensorsendsavaryingsignaltoathermostat,whichcanbeprogrammedtoturnanairconditioner,heater,orovenonandoffoncethesignalhasreachedacertainvalue.WordsandExpressionsbinary adj.二進(jìn)制的(用0和1記數(shù))；二元的

n.二進(jìn)制數(shù)octal/decimal/hexadecimal 八/十/十六進(jìn)制Booleanalgebra 布爾代數(shù)11WordsandExpressionssynchronize v.使同步desynchronize

去同步(同步破壞)synchronous/asynchronous 同步的/異步的programcounter 程序計(jì)數(shù)器stackpointer 堆棧指針；堆棧指針寄存器DSP:DigitalSignalProcessor

數(shù)字信號處理器DigitalSignalProcessing 數(shù)字信號處理技術(shù)WordsandExpressionscapture

vt.俘獲；捕獲；把…輸入計(jì)算機(jī)Wiresharkisafreeandopen-sourcetooltocaptureandanalyzenetworktraffic.ambientnoise

環(huán)境噪聲；氛圍噪音；背景噪音includessoundssuchasrainsounds,oceanwaves,trafficnoise,andelectricalnoisesfromdevicessuchasanairconditioning,refrigerator,icemachine,orfan.WordsandExpressionsdiscernible adj.可辨的；看得清的；辨別得出的digitaleffect 數(shù)字特效reconfigurable 可重構(gòu)的；可重配置的remotecontrol

遙控器；遙控RFIC:RadioFrequencyIC 射頻集成電路；射頻芯片MMIC:MicrowaveMonolithicIC 微波單片集成電路WordsandExpressionsgalliumarsenide n.砷化鎵（Ga-As）compoundsemiconductor 化合物半導(dǎo)體elementsemiconductor 元素半導(dǎo)體

siliconwafer 硅晶圓Unfortunately,GaAsismechanicallymuchlesssoundthansilicon.Itbreakseasily,soGaAswafersareusuallymuchmoreexpensivetobuildthansiliconwafers.15Backgrounds16DigitalSystems:FromLogicGatestoProcessors,/learn/digital-systemsDIYElectronicsProjects,/textbook/experiments/#chpt-7TextOutlineTheConceptandOriginofICBasicTypesofICAnalogvsdigitalcircuitsMicroprocessorcircuitsMemorycircuitsDigitalsignalprocessorsApplication-specificICsRadio-frequencyICs17TheConceptandOriginofICIntegratedcircuitshavetheiroriginintheinventionofthetransistorin1947byWilliamB.ShockleyandhisteamattheAmericanTelephoneandTelegraphCompany’sBellLaboratories.18TheConceptandOriginofICSolid-statedevicesprovedtobemuchsturdier,easiertoworkwith,morereliable,muchsmaller,andlessexpensivethanvacuumtubes.事實(shí)證明，固態(tài)器件比真空管更堅(jiān)固、更易用、更可靠、體積更小且成本更低。19TheConceptandOriginofICIn1958JackKilbyofTexasInstruments,Inc.,andRobertNoyceofFairchildSemiconductorCorporationindependentlythoughtofawaytoreducecircuitsizefurther.20Theinventionoftheintegratedcircuitmadetechnologiesoftheinformationagefeasible.BasicTypesofIC：AnalogvsDigitalGenerally,analogcircuitsareconnectedtodevicesthatcollectsignalsfromtheenvironmentorsendsignalsbacktotheenvironment,modifyingthesignalinsomeusefulway—suchasamplifyingitorfilteringitofundesirablenoise.Anothertypicaluseforananalogcircuitistocontrolsomedeviceinresponsetocontinualchangesintheenvironment.21BasicTypesofICThesebasicelements(digitallogiccircuits)arecombinedinthedesignofICsfordigitalcomputersandassociateddevicestoperformthedesiredfunctions.22BasicTypesofIC：AnalogvsDigitalMicroprocessorMicroprocessorsarethemost-complicatedICs.Theyarecomposedofthousandsofindividualdigitalcircuitssynchronizedtoeachother.Eachprocessorhasmanydifferenttypesofregisters.Permanentregistersareusedtostorethepreprogrammedinstructionsrequiredforvariousoperations(suchasadditionandmultiplication).Temporaryregistersstorenumbersthataretobeoperatedonandalsotheresults.23MicroprocessorOtherexamplesofregistersincludetheprogramcounter(alsocalledtheinstructionpointer),whichcontainstheaddressinmemoryofthenextinstruction;thestackpointer(alsocalledthestackregister),whichcontainstheaddressofthelastinstructionputintoanareaofmemorycalledthestack;andthememoryaddressregister,whichcontainstheaddressofwherethedatatobeworkedonislocatedorwherethedatathathasbeenprocessedwillbestored.寄存器的其他例子包括程序計(jì)數(shù)器（也稱為指令指針），存儲下一條指令在內(nèi)存中的地址；堆棧指針（也稱為堆棧寄存器），記錄放入堆棧的最后一條指令的地址；內(nèi)存地址寄存器，其中包含要處理的數(shù)據(jù)所在的地址或已處理的數(shù)據(jù)將被存儲的地址。24MemoryMemoryiscomposedofdensearraysofparallelcircuitsthatusetheirvoltagestatestostoreinformation.存儲器由密集的并聯(lián)電路陣列組成，這些并聯(lián)電路使用其電壓狀態(tài)來存儲信息。25MemoryManufacturerscontinuallystrivetoreducethesizeofmemorycircuits—toincreasecapabilitywithoutincreasingspace.Inaddition,smallercomponentstypicallyuselesspower,operatemoreefficiently,andcostlesstomanufacture.制造商不斷努力縮小內(nèi)存電路的尺寸，以在不增加物理空間的情況下增加存儲容量。此外，較小的組件通常使用較少的功率，運(yùn)行效率更高，制造成本更低。26DSPAdigitalsignalisananalogwaveformthathasbeenconvertedintoaseriesofbinarynumbersforquickmanipulation.Asthenameimplies,adigitalsignalprocessor(DSP)processessignalsdigitally,aspatternsof1sand0s.Forexample,theDSPalgorithminthecircuitmaybeconfiguredtorecognizegapsbetweenspokenwordsasbackgroundnoiseanddigitallyremoveambientnoisefromthewaveform.27DSPDigitalprocessingcanfilteroutbackgroundnoisesofastthatthereisnodiscernibledelayandthesignalappearstobeheardin“realtime.”數(shù)字處理可以快速濾除背景噪聲，因此沒有明顯的延遲，信號似乎是“實(shí)時(shí)”聽到的。28ASICAnapplication-specificIC(ASIC)canbeeitheradigitalorananalogcircuit.Asitsnameimplies,anASICisnotreconfigurable;itperformsonlyonespecificfunction.AnASICdoesnotcontainanyabilitytofollowalternateinstructions.29RFICRadio-frequencyICs(RFICs)arewidelyusedinmobilephonesandwirelessdevices.RFICsareanalogcircuitsthatusuallyruninthefrequencyrangeof3kHzto2.4GHz(3,000hertzto2.4billionhertz),andcircuitsoperatingatabout1THz(1trillionhertz)areunderdevelopment.30RFICJustassoundtravelsfasterthroughwaterthanthroughair,electronvelocityisdifferentthrougheachtypeofsemiconductormaterial.正如聲音在水中的傳播速度比在空氣中的傳播速度快一樣，電子在不同半導(dǎo)體材料中的傳播速度也不同。31RFICMMICsusuallyruninthe2-to100-GHzrange,ormicrowavefrequencies,andareusedinradarsystems,insatellitecommunications,andaspoweramplifiersforcellulartelephones.Siliconofferstoomuchresistanceformicrowave-frequencycircuits,andsothecompoundgalliumarsenide(GaAs)isoftenusedforMMICs.323.2PNJunctionandDiodeWordsandExpressionsBackgroundsText33WordsandExpressionsPNJunction PN結(jié)diode n.二極管triode 三極管ceramic n.陶瓷；陶瓷制品Aninsulator(suchasceramicordryair)conductselectricityverypoorlybecauseithasfewornofreeelectrons.WordsandExpressions35crystallinesilicon 晶體硅roomtemperature 室溫300K(Kelvin)=26.85°C(Celsius)=80.33°F(Fahrenheit)Purecrystallinesilicon,aswithothersemiconductingmaterials,hasaveryhighresistancetoelectricalcurrentatnormalroomtemperature.WordsandExpressions36impurity n.雜質(zhì)impurity

distribution雜質(zhì)分布dopant n.摻雜物，摻雜劑

dopantconcentration摻雜濃度implantation n.離子注入；植入Theprocessofintroducingimpuritiesisknownasdopingorimplantation.WordsandExpressionsdoneratom 施主原子；供電子原子acceptoratom 受主原子；接受體原子outershell 外電子層WordsandExpressionshole n.空穴thenamegiventoamissingelectronincertainsolids,especiallysemiconductors.intrinsicsemiconductor 本征半導(dǎo)體extrinsicsemiconductor 非本征半導(dǎo)體Whentheelectricalcharacteristicsaredictatedbyimpurityatoms,thesemiconductorissaidtobeextrinsicsemiconductors.WordsandExpressionsBJT:BipolarJunctionTransistor 雙極結(jié)型晶體管JFET:JunctionFieldEffectTransistor 結(jié)型場效應(yīng)管rectify vt.整流；精餾；矯正；訂正WordsandExpressions40photodiode n.光電二極管photosensor 光敏元件；光傳感器photodetector 光檢測器；光探測器photocell 光電池；光電管devoid adj.缺乏；完全沒有majoritychargecarrier 多數(shù)載流子minoritychargecarrier 少數(shù)載流子WordsandExpressions41depletionregion 耗盡區(qū)Insemiconductorphysics,thedepletionregion,alsocalleddepletionlayer,depletionzone,junctionregionorthespacechargeregion,isaninsulatingregionwithinaconductive,dopedsemiconductormaterialwherethechargecarriershavediffusedaway,orhavebeenforcedawaybyanelectricfield.WordsandExpressionsforward-bias

正向偏壓reverse-bias

反向偏壓barrierpotential 勢壘電壓；勢壘電位WordsandExpressionsdiffuse

v.擴(kuò)散，彌漫，滲透；(使光)模糊 adj.彌漫的；擴(kuò)散的；漫射的migrate v.遷移；轉(zhuǎn)移Diffusionisthemovementofsubstanceunderagradientofconcentration,ormorestrictlyspeaking,chemicalpotential,fromahighconcentrationzonetoalowconcentrationzone,whilemigrationisthemovementofchargedsubstanceundertheactionofanelectricalfield.WordsandExpressions44ANSI:AmericanNationalStandardsInstitute

美國國家標(biāo)準(zhǔn)學(xué)會anode n.陽極；正極cathode n.陰極；負(fù)極reversesaturationcurrent 反向飽和電流iscausedbydiffusionofminoritycarriersfromtheneutralregionstothedepletionregion.Thiscurrentisalmostindependentofthereversevoltage.WordsandExpressions45qualityfactor 品質(zhì)因子oridealityfactor,isameasureofhowcloselythediodefollowstheidealdiodeequation.Boltzmannconstant 波爾茲曼常數(shù)TheBoltzmannconstantrelatestheaveragerelativekineticenergyofparticlesinagaswiththetemperatureofthegas.reversebreakdownvoltage 反向擊穿電壓Backgrounds46SemiconductorDevices,/specializations/semiconductor-devicesSemiconductors,/textbook/semiconductors/TextOutlinePNJunctionDiode47PNJunctionAnymaterialcanbeclassifiedasoneofthreetypes:conductor,insulator,orsemiconductor.任何材料都可以歸為以下3種類型之一：導(dǎo)體、絕緣體或半導(dǎo)體。48PNJunctionInparticular,thedopedsiliconcanbeusedasaswitch,turningcurrentoffandonasdesired.特別是，摻雜硅可以用作電流開關(guān)，根據(jù)需要關(guān)閉和打開。49PNJunction(Byimplantingacceptoratoms)Theresultingcrystalcontains“holes”initsbondingstructurewhereelectronswouldnormallybelocated.Inessence,suchholescanmovethroughthecrystalconductingpositivecharges.結(jié)果是，晶體的鍵合結(jié)構(gòu)中原本是電子的位置被“空穴”取而代之。本質(zhì)上，這樣的空穴可以在晶體中移動，相當(dāng)于傳輸了正電荷。50PNJunctionBycreatingasinglezoneofNmaterialadjacenttoazoneofPmaterial,wewindupwiththePNjunction.ThePNjunctionscanbefoundinavarietyofdevicesincludingBJTsandJFETs.ThemostbasicdevicebuiltfromthePNjunctionisthediode.51DiodeDiodesaredesignedforawidevarietyofusesincludingrectifying,lighting(LEDs)andphotodetection(photodiodes).52DiodeAssumingthecrystalisnotatabsolutezero,thethermalenergyinthesystemwillcausesomeofthefreeelectronsintheNmaterialto“fall”intotheexcessholesoftheadjoiningPmaterial.假設(shè)晶體不是絕對零度，系統(tǒng)中的熱能將導(dǎo)致N型材料中的一些自由電子“落入”相鄰P型材料的空穴中。53DiodeThiswillcreatearegionthatisdevoidofchargecarriers…andthuswerefertoitasadepletionregion.acertainvoltagewillbedroppedacrossthedepletionregioninordertoachievecurrentflow.Thisrequiredpotentialiscalledthebarrierpotentialorforwardvoltagedrop.54DiodeForsilicondevicesthebarrierpotentialisusuallyestimatedataround0.7volts.Forgermaniumdevicesitiscloserto0.3voltswhileLEDsmayexhibitbarrierpotentialsinthevicinityof1.5to3volts,partlydependingonthecolor.對于硅器件，勢壘電壓通常估計(jì)在0.7V左右。對于鍺器件，勢壘電壓接近0.3V，而LED的勢壘電壓可能在1.5V至3V附近，部分取決于LED的發(fā)光顏色。55Diode56Also,ISisnotaconstant.Itincreaseswithtemperature,approximatelydoublingforeach10℃

rise.并且，IS不是常數(shù)。它隨著溫度的升高而增加，每升高10℃，大約會增加一倍。Diode57Theequationdoesnotmodeltheeffectsofbreakdown.VR

isthereversebreakdownvoltage.Notethatthecurrentincreasesrapidlyoncethisreversevoltageisreached.3.3TransistorWordsandExpressionsBackgroundsText58WordsandExpressionsamplify v.放大；增強(qiáng)(聲音等)Becausethecontrolled(output)powercanbehigherthanthecontrolling(input)power,atransistorcanamplifyasignal.package vt.封裝；將…包裝好packagingprocess 封裝工藝；封裝制程Today,sometransistorsarepackagedindividually,butmanymorearefoundembeddedinintegratedcircuits.WordsandExpressions60extrinsic adj.非本征的；非固有的；外來的extrinsicdiffusion

非本征擴(kuò)散schematicsymbol 電路符號collector

n.集電極base

n.基極emitter n.發(fā)射極WordsandExpressions61regulator n.調(diào)節(jié)器，調(diào)整器，校準(zhǔn)器；監(jiān)管者Bipolartransistorsworkascurrent-controlledcurrentregulators.雙極晶體管用作流控電流調(diào)節(jié)器。IGFET:InsulatedGateField-EffectTransistor 絕緣柵場效應(yīng)管source

n.源極gate n.柵極 v.門控drain n.漏極WordsandExpressions62channel n.溝道IntheFET,currentflowsalongasemiconductorpathcalledthechannelbetweensourceanddrain.cutoff

n.截止；切斷；界限Maximumgate-sourcevoltage“pinchesoff”allcurrentthroughsourceanddrain,thusforcingtheJFETintocutoffmode.WordsandExpressions63dielectric n.電介質(zhì)；絕緣體amaterialsuchasglassorporcelainwithnegligibleelectricalorthermalconductivitydielectricconstant 介電常數(shù)electrostatically 靜電；靜電地MOSFET:MetalOxideSemiconductorFieldEffectTransistor 金屬-氧化物-半導(dǎo)體場效應(yīng)管WordsandExpressions64enhancement n.提高；增加；增強(qiáng)enhancementtype 增強(qiáng)型；depletiontype 耗盡型CMOS:ComplementaryMOS

互補(bǔ)式金屬氧化物半導(dǎo)體Inearly1963FrankWanlassatFairchilddevelopedtheCMOStransistorcircuit,basedonapairofMOStransistors.ThisapproacheventuallyprovedidealforuseinICbecauseofitssimplicityofproductionandverylowpowerdissipation.WordsandExpressions65threshold n.閾值；門檻；界；起始點(diǎn)inversionlayer 反型層ThethresholdvoltageofaMOSFETisusuallydefinedasthegatevoltagewhereaninversionlayerformsattheinterfacebetweentheinsulatinglayer(oxide)andthesubstrate(body)ofthetransistor.Backgrounds66DigitalElectronicsandCircuits,https:///course/digital-electronics-and-circuits-p/CMOSDigitalIntegratedCircuitDesign,/course/cmos-digital-integrated-circuit-design/TextOutlineIntroductionBJTFETJFETIGFET67IntroductionAtransistorisasemiconductordeviceusedtoamplifyorswitchelectronicsignalsandelectricalpower.Therearetwobroadclassificationsoftransistors:bipolar-junctiontransistors(BJT)andfield-effecttransistors(FET).68BJTAbipolartransistorconsistsofathree-layer“sandwich”ofdoped(extrinsic)semiconductormaterials,eitherPNPintheFigure3.9(b)orNPNintheFigure3.9(d).69BJTThefunctionaldifferencebetweenaPNPtransistorandanNPNtransistoristheproperbiasing(polarity)ofthejunctionswhenoperating.PNP晶體管和NPN晶體管之間的功能差異在于工作時(shí)的偏置電壓極性不同。70BJTGenerallytherearethreedifferentconfigurationsoftransistorsandtheyarecommonbase(CB)configuration,commoncollector(CC)configurationandcommonemitter(CE)configuration.通常晶體管有3種不同的配置，它們是共基極（CB）配置、共集電極（CC）配置和共發(fā)射極（CE）配置。71FETAfield-effecttransistorisadeviceutilizingasmallvoltagetocontrolcurrent,includingthejunctionfieldeffecttransistor(JFET)andtheinsulatedgatefieldeffecttransistor(IGFET).Allfieldeffecttransistorsareunipolarratherthanbipolardevices.72FET:JFET73InajunctionfieldeffecttransistororJFET,thecontrolledcurrentpassesfromsourcetodrain,orfromdraintosourceasthecasemaybe.Withnovoltageappliedbetweengateandsource,thechannelisawide-openpathforelectronstoflow.FET:JFET74However,ifavoltageVGSisappliedbetweengateandsourceofsuchpolaritythatitreverse-biasesthePNjunction,theflowbetweensourceanddrainconnectionbecomeslimitedorregulated.然而，如果柵極和源極之間施加反向偏置電壓VGS，則源極到漏極之間的電流將受到限制，或者說可以被調(diào)節(jié)。FET:JFET75ThisbehaviorisduetothedepletionregionofthePNjunctionexpandingundertheinfluenceofareverse-biasvoltage,eventuallyoccupyingtheentirewidthofthechannelifthevoltageisgreatenough.這種行為是由于PN結(jié)的耗盡區(qū)在反向偏置電壓的影響下擴(kuò)展，如果電壓足夠大，最終耗盡區(qū)會占據(jù)溝道的整個(gè)寬度。FET:IGFET76

InIGFET,thereisnodirectconnectionbetweenthegateleadandthesemiconductormaterialitself.Rather,thegateleadisinsulatedfromthetransistorbodybyathinbarrier,hencetheterminsulatedgate.ThemostcommontypeofinsulatedgateFETwhichisusedinmanydifferenttypesofelectroniccircuitsiscalledtheMOSFET.FET:IGFET77InadditiontoachoiceofN-channelversusP-channeldesign,MOSFETscomeintwomajortypes:depletionandenhancement.DepletionType-NormallyClosedswitchEnhancementType-NormallyOpenswitchFET:IGFET78Thisinsulatingbarrieractslikethedielectriclayerofacapacitorandallowsgate-sourcevoltagetoinfluencethedepletionregionelectrostaticallyratherthanbydirectconnection.該絕緣屏蔽層的作用類似于電容器的介電層，允許柵極-源極電壓以靜電方式影響耗盡區(qū)，而不是通過直接連接。FET:IGFET79AstheGateterminaliselectricallyisolatedfromthemaincurrentcarryingchannelbetweenthedrainandsource,“Nocurrentflowsintothegate”andtheinputresistanceoftheMOSFETisextremelyhighwayupinthemegaohm(MΩ)region.由于柵極與漏源之間的主載流通道是電隔離的，因此，“沒有電流流入柵極”，并且MOSFET的輸入電阻高達(dá)兆歐姆（MΩ）量級。FET:IGFET80MOSFETsareidealforuseaselectronicswitchesorascommon-sourceamplifiersastheirpowerconsumptionisverysmall.Typicalapplicationsformetal-oxide-semiconductorfieldeffecttransistorsareinmicroprocessors,memories,calculatorsandlogicCMOS(complementaryMOS)gatesetc.3.4FPGAWordsandExpressionsBackgroundsText81WordsandExpressionsnuance n.細(xì)微的差別FPGAstandsforfield-programmablegatearray.Atitscore,anFPGAisanarrayofinterconnecteddigitalsubcircuitsthatimplementcommonfunctionswhilealsoofferingveryhighlevelsofflexibility.ButgettingafullpictureofwhatanFPGAisrequiresmorenuance.WordsandExpressions83versatile adj.多功能的；多用途的；多才多藝的VVC:VersatileVideoCoding 多功能視頻編碼；通用視頻編碼VRP:VersatileRoutingPlatform 華為通用路由平臺sequential

adj.按次序的；順序的；序列的sequentiallogiccircuit時(shí)序邏輯電路combinationallogiccircuit組合邏輯電路WordsandExpressions84approach n.(處理問題、完成任務(wù)的)方法Thealternativeisahardware-basedapproach.另一種替代方案是基于硬件的方法。methodology n.方法論；(從事某一活動的)方法，原則improvementmethodology 性能改善方法學(xué)modelingmethodology 建模方法學(xué)XOR:eXclusiveOR

異或XNORgate/equivalencegate 同或門WordsandExpressions85look-uptable 查找表Lookuptableisactuallyyourcustomizedtruthtablewhicheffectivelydefineshowyourcombinatoriallogicbehaves.flip-flop

觸發(fā)器Flip-flopisacircuitthatmaintainsastateuntildirectedbyinputtochangethestate.Commontypesofflip-flops:SR,JK,T,D.WordsandExpressionsmultiplexer n.多路復(fù)用器demultiplexer 解復(fù)用器SRAM:StaticRandomAccessMemory 靜態(tài)隨機(jī)存儲器86WordsandExpressions87buffer

n.緩沖器；緩存區(qū)；緩沖存儲器

vt.緩存；緩沖；存儲bufferoverflow 緩存溢出buffermanagement

緩沖區(qū)管理inverter n.反相器；逆變器；非門HDL:HardwareDescriptionLanguage 硬件描述語言VHDL:Very-High-SpeedICHDL,VerilogHDLWordsandExpressions88synthesis

n.綜合；合成；綜合體DuringtheFPGAsynthesisprocess,ahighdescriptiondesignoranHDLdesignisconvertedintoagatelevelrepresentationoralogiccomponent.indicator n.標(biāo)志；指示器；指針Therangeisusuallylimitedtothefull-scaledeflectionoftheindicator.量程通常以指針的滿刻度偏轉(zhuǎn)為限。WordsandExpressionsimpedance

n.阻抗measureofthetotaloppositionthatacircuitorapartofacircuitpresentstoelectriccurrent.Impedanceincludesbothresistanceandreactance.proprietary adj.專有的；專利的proprietaryprotocol/publicprotocol 私有協(xié)議/公開協(xié)議proprietarysoftware/opensourcesoftware

專利軟件/開源軟件89Backgrounds90HardwareDescriptionLanguagesforFPGADesign,/learn/fpga-hardware-description-languagesTextOutline91IntroFPGAvsMicrocontrollerWhatisaProgrammableGateArray?HowDoYouProgramanFPGAIntro92ThefollowingintroducestheconceptsbehindFPGAsandbrieflydiscusseswhatmakesanFPGAdifferentfromamicrocontrollerindesign,whatlogicgatesare,andhowtoprogramanFPGA.下面介紹FPGA的相關(guān)概念，并簡要討論FPGA與微控制器在設(shè)計(jì)上的區(qū)別、什么是邏輯門，以及如何對FPGA進(jìn)行編程。FPGAvsMicrocontroller93Asmicrocontrollersbecomeincreasinglypowerful,thereislessandlessneedtoconsideralternativesolutionstoourdesignchallenges.SowhenwouldanengineerreachforanFPGAoveramicrocontroller?softwarevshardwareFPGAvsMicrocontrollerAprocessoraccomplishesitstasksbyexecutinginstructionsinasequentialfashion.Thismeansthattheprocessor’soperationsareinherentlyconstrained:thedesiredfunctionalitymustbeadaptedtotheavailableinstructionsand,inmostcases,itisnotpossibletoaccomplishmultipleprocessingtaskssimultaneously.這意味著處理器的操作本身受到限制：所需的功能必須適應(yīng)可用的指令，并且在大多數(shù)情況下，不可能同時(shí)完成多個(gè)處理任務(wù)。94FPGAvsMicrocontrollerThealternativeisahardware-basedapproach.ItwouldbeextremelyconvenientifeverynewdesigncouldbebuiltaroundadigitalICthatimplementstheexactfunctionalityrequiredbythesystem:noneedtowritesoftware,noinstruction-setconstraints,noprocessingdelays,justasingleICthathasinputpins,outputpins,anddigitalcircuitrycorrespondingpreciselytothenecessaryoperations.如果每種新的系統(tǒng)設(shè)計(jì)都能基于一個(gè)數(shù)字集成電路來精確實(shí)現(xiàn)所需功能，設(shè)計(jì)者不需要編寫軟件，沒有指令集約束，也沒有處理延遲，只需要一個(gè)具有輸入引腳、輸出引腳并能精確完成所需操作的數(shù)字集成電路，那將會是非常方便的。95WhatisaProgrammableGateArray?96

AnFPGAisanarrayofcarefullydesignedandinterconnecteddigitalsubcircuitscalledconfigurablelogicblocks(CLBs).CLBsinteractwithoneanotherandwithexternalcircuitryusingamatrixofprogrammableinterconnectsandinput/outputblocks(IOBs).WhatisaProgrammableGateArray?97TheCLBsincludelook-uptables,storageelements(flip-flopsorregisters),andmultiplexersthatallowtheCLBstoperformBoolean,data-storage,andarithmeticoperations.AnI/OblockconsistsofvariouscomponentsthatfacilitatecommunicationbetweentheCLBsandothercomponentsontheboard.Theseincludepull-up/pull-downresistors,buffers,andinverters.TheFPGA’s“program”isstoredinSRAMcellsthatinfluencethefunctionalityoftheCLBsandcontroltheswitchesthatestablishtheconnectionpathways.HowDoYouProgramanFPGA98FPGAsarealwayssupportedbydevelopmentsoftwarethatcarriesoutthecomplicatedprocessofconvertingahardwaredesignintothepr