半導(dǎo)體工藝Photo課件

IC工藝技術(shù)系列講座

第二講PHOTOLITHOGRAPHY光刻半導(dǎo)體工藝Photo講座提要1. General2. Facility(動力環(huán)境)3. Mask(掩膜版)4. Processstephighlight(光刻工藝概述)5. BCD正膠工藝6. Historyand未來的光刻工藝半導(dǎo)體工藝Photo1. GeneralMASKINGProcess(光刻工藝)Photolithography(光學(xué)光刻)----Transferatemporarypattern(resist)

Defectcontrol Criticaldimensioncontrol Alignmentaccuracy Crosssectionprofile

Etch(腐蝕)----Transferapermanentpattern(Oxide,Nitride,Metal…)半導(dǎo)體工藝Photo2.0 FacilityrequirementTemperature(溫度)70oFHumidity(濕度) 45%Positivepressure(正壓) >0.02in/H2OParticlecontrol(微粒)Class100Vibration(震動)Yellowlightenvironment(黃光區(qū))DIwater(去離子水)17mhomCompressairandNitrogen(加壓空氣,氮氣)Inhousevacuum(真空管道)半導(dǎo)體工藝Photo3.0 Mask(掩膜版)

DesignPGtapeMaskmaking

Plate---quartz,LEglass,SodalineglassCoating---Chrome,Ionoxide,EmulsionEquipment---E-beam,PatterngeneratorMaskstorage---AntistaticBox半導(dǎo)體工藝PhotoPellicle半導(dǎo)體工藝PhotoPellicleprotection半導(dǎo)體工藝Photo4.0 光刻工藝概述PrebakeandHMDS(前烘)Resistcoating(涂膠) EBR(去膠邊),softbake,3. Exposure(曝光) Alignment(校正)4. Develop(顯影) Poste-bake,Hardbake,backsiderinse5. Developinspection(顯檢)半導(dǎo)體工藝Photo4.1 PrebakeandHMDStreatment

PurposeofPre-bakeandHMDStreatmentistoimprovetheresistadhesiononoxidewafer.HMDSisadhesionpromoterespeciallydesignedforpositiveresist. HMDS(Hexamethyldisilane)canbeappliedonthewafersby 1. Vaporinabucket 2. vaporinavacuumbox 3. Directlydispenseonwafer 4. YESsystem---inahotvacuumsystem 5. Vaporinahotplate(withexhaust) ToomuchHMDSwillcausepoorspin,viceversawillcauseresistlifting半導(dǎo)體工藝Photo4.2 ResistCoating(涂膠)Resistcoatingspecification(指標(biāo)）Thickness（厚度）0.7u–2.0u(3.0以上forPadlayer)Uniformity（均勻度）+50A–

+200ASizeofEBR（去膠邊尺寸）Particle（顆粒）<20perwaferBacksidecontamination(背后污染）三個主要因數(shù)影響涂膠的結(jié)果Resist Product(產(chǎn)品）

Viscosity（粘度）Spinner Dispensemethod（涂膠方法）

Spinnerspeed(RPM)（轉(zhuǎn)速）

Exhaust（排氣）

Softbaketemperature（烘溫）Facility Temperature（室溫）Humility（濕度）半導(dǎo)體工藝Photo4.2.1 Coater(涂膠機）EquipmentmoduleandspecialfeaturePre-bakeandHMDS---Hot/ColdplateResistdispense---ResistpumpRPMaccuracy---MotorEBR---Top/bottomHotplate---softbaketemperatureaccuracyExhaustWastecollectionTemperature/HumiditycontrolhoodTransfersystem---ParticleandreliabilityProcessstepandprocessprogram---Flexible半導(dǎo)體工藝PhotoSVG8800升降機涂膠HMDS熱板冷板升降機升降機升降機涂膠熱板熱板升降機升降機升降機升降機涂膠熱板冷板HMDS冷板冷板冷板涂膠熱板熱板升降機升降機顯影熱板熱板熱板冷板4.2.2Coater(涂膠機）combination半導(dǎo)體工藝Photo4.2.3Coater(涂膠機）ResistdispensemethodsStaticDynamicRadialReverseradialResistpump(Volumecontrol---2cc/waferanddripping)Barrelpump---TritekDiaphragmpump---MilliporeN2pressurecontrolpump---IDLStepmotorcontrolpump---Cybotsizeofdispensehead半導(dǎo)體工藝Photo4.2.4 Coater(涂膠機）rpm(轉(zhuǎn)速）

andacceleration（加速）

Maximumspeed---Upto10000rpmStability---daytodayAcceleration---controllablenumberofstepsReliability---timetoreplacementEBR(Edgebeadremoval)（清邊）Method---TopEBRorBottomEBRorTopandbottomEBRProblem---DrippingChemical----Acetone,EGMEA,PGMEA,ETHLY-LACTATE半導(dǎo)體工藝PhotoResistTypeNegativeresistPositiveresist G-line i–line reverseimage TAC---topanti-reflectivecoating BARLI---bottomanti-reflectivecoatingChemicalamplificationresistXrayresist半導(dǎo)體工藝Photo4.3 .1Exposure(曝光)

Transferapatternfromthemask(reticle)toresistGoal1. CriticalDimensioncontrol(CD)條寬2. Alignment校準(zhǔn)---Mis-alignment,runin/out3. Patterndistortion圖樣變形---Astigmatism4. Crosssectionprofile側(cè)面形貌---sidewallangle5. Defectfree無缺陷Equipment/mask/resistselection1. Resolution分辨率---Exposecharacter,Lightsource(wavelength),N/A,2. Auto-alignmentskill自動校準(zhǔn)技術(shù)---Lightfield,darkfield,laser3. Mask掩膜版---e-beammaster,sub-master,spotsize,quartzplate,defectdensity,CDrequirement4. Resistselection膠選擇半導(dǎo)體工藝Photo4.3.2 Exposure(曝光)

AlignerTechnology1. Contactprint(接觸）

Softcontact,hardcontact,proximity2. Scanner(掃描）3. Stepper(重復(fù)）

1X,2X,4X,5X,10X4. Step–Scan(重復(fù)掃描) 4X---reticlemove,wafermove,reticle/wafermove5. Xray(X光）

1:16. E-beam(電子束）---Directwrite半導(dǎo)體工藝Photo4.3.3 Exposure(曝光)

Contactprint(接觸）1. Mostofusefornegativeresistprocess---for5uprocessandcanbepushto3u.2. Positiveresistcanprintsmallerthan3u,anddeepUVcanpushto1u,butveryhighdefect3. Equipment: ---CanonPLA501 ---Cobilt ---Kasper ---K&S半導(dǎo)體工藝PhotoContactprint---Canon501半導(dǎo)體工藝Photo4.3.4 Exposure(曝光)

Scanner(掃描）1. MostofuseforG–linePositiveresistprocess---for3uprocessandcanbepushto2u.2. Negativeresistcanprintsmallerthan4u3. Equipment: ---CanonMPA500,600 ---PerkinElmer100,200,300,600,700,900

半導(dǎo)體工藝PhotoPE240Scanner半導(dǎo)體工藝PhotoCanon600Scanner半導(dǎo)體工藝Photo4.3.5 Exposure(曝光)Stepper(重復(fù)）

1. Glinepositiveresist---for<0.8uprocess2. ilinepositiveresist---<0.5uprocess3. ilineresistplusphase-shiftmask---canbepushedto0.354. deepUVresistprocess---0.35uandbelow5. Equipment: ---Ultratech ---Canon ---Nikon ---ASML 半導(dǎo)體工藝Photo4.3.6 Exposure(曝光)6ASMLStepperlist

Model WavelengthResolutionASML2500 g 0.8ASML5000 ASML5500–20,22,25,60,60B,80,80B i 0.55ASML5500–100,100C,100D,150 i 0.45ASML5000–200,200B,250,250B UV 0.35ASML5500–300,300B,C,D,TFH UV 0.25ASML5500-900Step-Scan UV半導(dǎo)體工藝Photo4.4.1 Develop(顯影）Developprocess 1. Postexposebake 2. ResistDevelop 3. DIwaterrinse 4. HardBakeDevelopequipment 1. Batchdevelop 2. Trackdevelop

Developchemical 1.

KOH 2. Metalfree(TMAH)--- Tetramethylamoniahydroxide 3. Wettingagent---with/without 4. Concentration---2.38%TMAHTrackdevelopmethod 1.

Spray 2. Steam 3. Signal-Paddle 4. Double-Paddle半導(dǎo)體工藝Photo4.4.2Develop(顯影）DevelopTrack1. TemperaturecontrolwaterjacketforDevelopline2. Developpump/developpressurecanister3. Exhaust4. Hotplatetemperaturecontrol5. Pre-wet---processprogram半導(dǎo)體工藝Photo4.4.3 Develop(顯影）CDcontrolindeveloping1. Postbakeprocess2. DevelopTime3. Concentrationofdeveloperchemical(Higherfast)4. Developertemperature(lowerfaster~1oC/0.1u)5. Developrecipe---pre-wet,paddle,rotation6. Ageofthedevelopchemical7. Rinse---DIwaterpressure8. Hardbaketemperature半導(dǎo)體工藝Photo4.5.1 DevelopInspection

Toolforinspection1. Microscope Manuallyloading Automaticloading2. UVlamp Manuallyloading Automaticloading3. CDmeasurementequipment Manuallymeasuringsystem---Vicker, Automaticmeasuringsystem---Nanoline CDSEM半導(dǎo)體工藝Photo4.5.2 DevelopInspection

Inspectionitems1. Layername2. Alignment3. Runin/out4. Patterndistortion5. Patternintegrity6. Defects lifting,particle,discoloration,scumming,bridging,excessresist,scratch7. CD(criticaldimension)

半導(dǎo)體工藝PhotoNanoline---forCDmeasurement半導(dǎo)體工藝PhotoHitachi8860---CDSEM半導(dǎo)體工藝PhotoLeitzMicroscopeinspectstation半導(dǎo)體工藝PhotoAutoloadUVinspectionsystem

半導(dǎo)體工藝Photo5.0 BCD正膠工藝Equipment SSI,SVG8800,SVG90Processstep pre-bake/HMDS/coldplate spin(<5000rpm)---dynamicdispense ---top(bottom)sideEBR(2mm) softbake(100oC)/cold/palteResist/spec Shipley 6112(1.2u) 1818(1.8u1stmetal) 6818(2.4u2ndmetal) 6118(2.9uPad) 6124(3.6u-4.5uST) Everlight 533(1.2) Uniformity---+300AResistcoating升降機冷板HMDS涂膠熱板冷板升降機半導(dǎo)體工藝PhotoSVG90半導(dǎo)體工藝PhotoSVG8800半導(dǎo)體工藝Photo5.1.1 PositiveResist(正膠）Component(成分）Resin（樹脂）

Diazonaphthoquinone(DNQ)/novolakPhoto-sensitizer（感光劑）Solvent（溶劑）Dye（染料）Manufacturing(制造商）Kodak–Hunt–Ashchemical(USA)TOK(Japan)JSR(Japan)Shipley(USA)AZ(USA,Germany)Sumitomo(Japan)Everlight(Taiwan)半導(dǎo)體工藝Photo5.1.2 PositiveResist(正膠）ProductNameandfeature(產(chǎn)品稱與特性）以everlight(永光）正膠為例

ProductSeries EPG510Series Exposewavelength G-Line(435nm) Thickness Name 2000rpm5000rpm Viscosity（粘度） EPG510---12cp 1.25u 0.80u EPG512---21.5cp 2.00u 1.25u EPG516---50cp 3.25u 2.00u EPG518---105cp 4.50u 2.75u EPG519---460cp 9.00u 5.5u

Resolution(分辨率） 0.8u(0.55u---thesmallest) DepthofFocus(聚焦深度）+1.4u(1.0uline/space) Sensitivity(感光度） Eth=60mj/cm2

Eop=90mj/cm2半導(dǎo)體工藝Photo5.1.4 PositiveResist(正膠）Selectapositiveresist1. Resolution（分辨率）2. Resistthickness---Spincurve（厚度）3. Photospeed (曝光速度)4. Exposelatitude(曝光寬容度)5. Adhesion（粘附性）6. Reflectivenotch（反射缺口）6. Metalliccontent（金屬含量）7. Thermalstability（熱穩(wěn)定性）8. Plasmaresistance（抗腐蝕能力）9. Howeasytoberemoved（清除能力）10. Price（價格）半導(dǎo)體工藝Photo5.2 ExposeEquipmentUltratechstepper1100–(6”)

Ultratechstepper1500–(6”)

Canon600 –(6”)

PerkinElmer240 –(4”)半導(dǎo)體工藝PhotoPositiveResistreactionduringexpose半導(dǎo)體工藝PhotoPositiveResistreactionduringexpose半導(dǎo)體工藝Photo5.2.1 UltratechStepper

UltratechstepperG-lineN/A---0.24and0.311:1printratio3X5inchreticle---3,4,5,7field4udepthoffocusBlindstepcanbepushto<5u(nospec)Centerofarray<+50uDarkfieldalignmentSitebySitealignmentAlignmenttarget *oat---4mmX4mm *K/T---200uX200u半導(dǎo)體工藝PhotoUltratechStepper1100半導(dǎo)體工藝PhotoUltratechStepper1500/1700半導(dǎo)體工藝Photo5.2.2 Ultratchstepperspecification半導(dǎo)體工藝PhotoUTS---ReticleandJobfileGuideFiducials半導(dǎo)體工藝PhotoUTS---primarylens半導(dǎo)體工藝PhotoUTSAlignment

Optic半導(dǎo)體工藝PhotoUlratechsteppersitebysitealignment半導(dǎo)體工藝PhotoUTalignmentprocedureLoadjobcomputerLoadreticle

StartＦiducialsalignment---Guide,rotation(1500)OATalignment OATsize=4mmX4mm Fastandslowscan1000uSidebysidealignment Keyandtargetsize200uX200u shotscan20u longscan100u(80u)Auto-focus GobleorlocalFailurealignment Skip Expose Zmode半導(dǎo)體工藝Photo5.3PerkinElmeralignerMicalignPE100MicalignPE200,220,240MicalignPE300,340,340HTMicalignPE500MicalignPE600MicalignPE700MicalignPE900Micscan100Micscan200Micscan300Micscan400半導(dǎo)體工藝PhotoPE240

Specification半導(dǎo)體工藝PhotoPE240半導(dǎo)體工藝PhotoPE240PMCenterofcurvatureParallelismLightintensityFocusDistortionMask/wafercenteringViewopticHPCrebuildCoolingairflowrateVibrationfromHPCFacilityVibrationfromenvironmentTemperaturecontrolhoodProcessReferencewaferApertureselectionResistbuilduponXYOpinsRoofmirrorcleaningMaskheatupduringexpose半導(dǎo)體工藝PhotoPE---Focuswedgemask半導(dǎo)體工藝PhotoPE---distortion半導(dǎo)體工藝PhotoPE---Projectionoptic半導(dǎo)體工藝PhotoPEMercurylamp半導(dǎo)體工藝PhotoPE---Adjustableslit半導(dǎo)體工藝PhotoPEalignmentprocedureSetscanLoadmaskLoadwaferSwitchtomaskUsemicroscopeandcarriagemovementtofindthealignmentmarkonmask(Testdie)MovemaskonlytoalignthewaferSwitchtowaferMovewaferaligntomask半導(dǎo)體工藝Photo5.4.1 ResistdevelopEquipment SSI,SVG8800,SVG90Processstep pose-ebake/coldplate develop---doublepaddle ---DIwaterrinse ---backN2/rinse hardbake(110-130oC)/cold/palteDeveloper TMAH2.35%

升降機冷板熱板冷板升降機熱板顯影半導(dǎo)體工藝PhotoSVG8800半導(dǎo)體工藝PhotoSVG90半導(dǎo)體工藝Photo5.4.2ResistdevelopEquipment DevelopsinkEquipmentsetup Temperature N2blanket Filtersize Filterchange

Developer TMAH2.38% DevelopchangeProcessstep batchdevelop---immerse(1’&15”) QDRDIwaterrinse(8cycles) hardbake(110-130oC)/cold/palte半導(dǎo)體工藝Photo6.Historyand未來的光刻工藝Willimprinttechnologyreplacephotolithography?In1798,imagewastransferredbystoneplate1940,BellLabusedresistdevelopedbyEastmanKodak1960,SanFranciscobayareabecomesthesiliconvalley---AT&T,Raytheon,Fairchild,Negativeresist–contactprintprocesswildlywasused.Endof1970-earlyof1980,positiveresist–Projectionprint(PerkinElmerMicalign)startedtobeusedinproduction.Bayareabecamecloudy---National,IntelandAMD.OutsidebayareahadMotolora,TI,IBM.From1970toearly2000,thetechnologyofsemiconductorisdevelopedveryfast.Thesmallestfeaturesizefrom10ureducedto0.09u.0.25uand0.35uproductswererunningmassproductioneverywhere---USA,Europe,Japan,Taiwan,Korea…i-line,anddeepUV---5Xstepperandstep-scan(4X)alignerbecamethemajortools.Now,0.09utechnologybecomemature.0.065u,0.045uand0.035utechnologyarebeingdeveloped.Immersionlithographyandimprinttechnologywillbeusedtoprintthesenanofeature.Imprinttechnologyclaimsthatitisabletoprint0.01u(10nm)---Itmaybethefuturemasking.半導(dǎo)體工藝Photo6.1 History

Lithography,asusedinthemanufactureoftheintegratedcircuit,istheprocessoftransferringgeometricshapesonamasktothesurfaceofasiliconwafer.Theseshapesmakeupthepartsofthecircuit,suchasgateelectrodes,contactwindows,metalinterconnections,andsoon.Althoughmostlithographytechniquesusedtodayweredevelopedinthepast40years,theprocesswasactuallyinventedin1798;inthisfirstprocess,thepattern,orimage,wastransferredfromastoneplate(thewordlithocomesfrom).Thefirstpracticaltwodimensionaldevicepatterningonasiliconwaferwasactuallycarriedoutinthelate1940sattheBellLab.Atthattime,polyvinylcinnamate,developedbyEastmanKodak,wasusedasaresist.However,deviceyieldswerelowbecauseofthepooradhesionofthepolyvinylcinnamatetothesiliconandoxidesurface.TheKodakchemiststhenturnedtoasyntheticrubberbasedmaterial---apartiallycyclizedisopreneandaddedaUVactivesensitizer---abis-aryl-azideintoittocrosslinktherubbermatrixandcreatedanewclassofphotoresistmaterial.Sincetheunexposedareaofthenewmaterialwastheonlypartofthepolymermatrixthatwilldissolveinanorganicsolventandyieldinganegativeimageofthemaskplate,therefore,thenewmaterialwasthenreferredasthenegativeresist.Thecyclizedrubber/bisazideresistwaswidelyusedinthecontactprintingage.However,thecontactmodeofprintingcreatedseverewearofthemaskplateandthedefectdensityofthephotomaskandthewaferwasveryhigh.Theindustrythereforedecidedtoswitchtocontactlessprojectionprintingin1972forproducingthe16kDRAM.Projectionprinting,however,wascarriedoutintheFraunhofferorthesocalledfarfielddiffractionregionandtheaerialimagewasmuchpoorerthanthecontactorproximitymethodofprinting.Inordertopreservethesamequalityofimagestructure,thecontrastoftheimagematerialmustbeincreased.

半導(dǎo)體工藝Photo

Lithographiclorehasitthatthediazonaphthoquinone/novolakresist(thetermnovolakisderivedfromtheSwedishwordlak,meaninglacquerorresinandprefixedbytheLatinwordnovo,meaningnew)madetheirwayfromtheblueprintpaperindustrytothemicroelectronicthroughfamilyties:atthattimes,theofficesofAzoplate,theAmericanoutletforKalleprintingplate,waslocatedatMurrayHill,NJ,justacrossthestreetfromthefamousBellLabs.ThefatherofatechnicianatAzoplateworkedasatechnicianatBellLabs.ApparentlythefatherhadcomplainedonedayaboutthepoorresolutionqualityofthesolventdevelopedresistsystemusedattheBellLabsandthesonhadboastedthepropertiesoftheAzoplateDNQ/novolakmaterial;anyway,onedaythefathertookabottleofthematerialwithhimtotheBellLabs,andtheageoftheDNQ/novolakresistbegan.ThenewmaterialwasmarketedbyAzoplateunderthetradenameofAZphotoresist.Itwasalwaysreferredasthepositiveresistforapositivetoneofimagewouldbereproducedbythenewmaterial.TheuseofDNQ/novolaksystemincreasedrapidlyaftertheintroductionoftheprojectionlithography.By1980s,theDNQresisthadcompletelysupplantedtheoldnegativeresistastheworkhorseofthesemiconductorindustryinthehigh-endapplications.TheDNQ/novolakresisthasheldswayfor6devicegenerations,fromtheintroductionofthe16KDRAMtothelargescaleproductionofthe64MDRAMin1994to1995.Thesuccessofsuchmaterialwastheindicativeofitsupremeperformanceandpotential.Today,itappearsthatitisnotreallytheresolutionwhichdefinesthelimitoftheDNQ/novolakresistapplication,butratherthelossinthedepthoffocuswiththeeverincreasingNAofthestepper.DeepUVandchemicalamplificationnegativetoneresistslowlyerodethemarketplaceoftheDNQ/novolakresist.Bytheendofthe1990s,theDNQ/novolakresistwasnolongerbeusedinthetechnologicallymostadvancedapplications---theprintingofthecriticallevelsofthe256MDRAM.半導(dǎo)體工藝Photo6.2Future

IntroductionofnanoimprinttechnologyFabricatingmicrostructuresandnanostructureisimportantinmanyfieldsofscienceandtechnology,includingelectronics,datastorage,flexibledisplays,microelectromechanicalsystems,microfluidics,photonicsandbiosensors.Traditionally,opticalorelectronbeamlithographysystemsareusedtoprinttherelevantstructures.However,newprintingmethodssuchasimprintlithographyandsoftlithographyhaverecentlybeenexploredinsomedetailtolowerthecostsoffabricatinglowvolumesofstructureswithverysmallfeaturesandtoincreasetherangeofprintingapplication.Thesoftlithographyschemes,ingeneral,useasofttemplatepatternmadeofsiliconeelastomer,polydimethylsiloxane(PDMS),whichisplacedintocontactwiththesubstrateinavarietyofways,topatternasurfacefilm,totransferamaterial,orfordirectintegrationintothefinalpart,witharangeofinnovativeapplications.ChallengesinthisareaaregenerallyconcernedwiththeinherentlimitationsofthePDMSmaterialincludingresolutionlimitationswhencuringduetodifferencesinthermalexpansionbetweenthemasterandmold;adhesiontocommonmastermaterialslike