小米插線板5V3A主芯片

AP3776B+APR34309C_5V3AHenry20141226PhotoofPCBSchematicsBillOfMaterialItemDescriptionQTYItemDescriptionQTYC1,215uF/400V,105℃,electrolytic2R1R247MΩ,08052C310uF,1206,ceramic1R35.1MΩ,08051C410nF,0805,ceramic1R4300Ω,08051C51nF/500V,0805,ceramic1R51R//1R//3Ω,08051C21820uF/6.3V,solid1R64.7KΩ,0805,1%1C22560uF/6.3V,solid1R720K//750KΩ,0805,1%1C23100nF,0805,ceramic1R839kΩ,0805,1%1C241nF,0805,ceramic1R102.4Ω,0805,1CY1470nFY-cap1R11470KΩ,1206,BRbridge-KBP2061R1247Ω,12061D11N4007,SMA1R21R2320Ω,06032D21N4007,SMA1R2227KΩ,0603,1%1D31N4148,SOD1231R2422Ω,06031LF20mH—UU9.81TR1EE19(560uH)1L11mH6*81IC1AP3776B1FR1250V2A1IC2APR34309C1Q110N65(TO-220塑封)1TransformerSpecificationWindingSequence:ReversethebobbinforWD4，forallthepinsareplacedontherighthandside

WD1Primarywinding1StartatPin2.Wind28turnsof?0.26mmwirefromlefttoright.FinishonM.Windtightly&spreadevenlyInsulation2Layersofinsulationtape,0.05mmthick,8.5mmwide.WD2AuxiliarywindingStartatPin4.Wind9turnsofthreeparalleled?0.26mmwirefromlefttoright.FinishonPin5.Windtightly&spreadevenlyInsulation2Layersofinsulationtape,0.05mmthick,8.5mmwide.WD3WireShieldingStartatPin5.Wind35turnsof?0.2mmwirefromlefttoright.Theterminalfloat.Windtightly&spreadevenlyInsulation2Layersofinsulationtape,0.05mmthick,8.5mmwide.WD4SecondarywindingReversethebobbinforWD4.StartatA.Wind4turnsoftwoparalleled?0.65mmTripleInsulatedWirefromrighttoleft.TerminateonB.Windtightly&spreadevenlyInsulation2Layersofinsulationtape,0.05mmthick,8.5mmwide.WD5WireShieldingStartatPin1.Wind10turnsof?0.2mmwirefromlefttoright.Theterminalfloat.Spreadevenly.Insulation2Layerofinsulationtape,0.05mmthick,8.5mmwide.WD6Primarywinding2StartatM.Wind24turnsof?0.26mmwirefromrighttoleft.FinishonPin1.Windtightly&spreadevenlyInsulation2Layerofinsulationtape,0.05mmthick,8.5mmwide.varnishvarnishcoreandbobbinTransformerSpecificationElectricalDiagramBobbin:EE19Dilated5+5PinAe=45PrimaryInductancePin1-2,allotherwindingsopen,measuredat1kHz,0.4VRMS0.56mH,±7%PrimaryLeakageInductancePin1-2,allotherwindingsshorted,measuredat10kHz,0.4VRMS80uH(Max.)ReversethebobbinforWD4CoreisconnectedtoPin5.StandbyPower10mW@230V85V3AIoutEfficiency85V115V230V264V0.758686.6484.583.031.584.3885.8486.2385.632.2583.4985.3886.0985.52382.2384.6985.8885.39AVE84.02585.6485.6784.89Efficiency

TestCondition:TestedatendofPCBAverageEfficiency@115V:85.64%@230V:85.67%Frequency：50K@3AOutputI-VCurveTestCondition:TestedatendofPCBTestCondition:TestedatendofPCBStartup

time

264Vac3A85Vac3A30.48ms29.33msCH1:VoutCH2:VacVoutRipple85V0A265V0ARipple:22.4mVRipple:22.4mVTestedatendofPCBwith104//47uFcapacitanceTestwithcoaxialcableVoutRipple85V3A265V3ATestedatendofPCBwith0.1uF//47uFcapacitanceRipple:98.6mVRipple:81.9mVRipple:91.5mVRipple:83.8mVTestwithcoaxialcableDynamicVin=264VACVo_min=4.52VVin=85VACVo_min=4.39VTestedatendofPCB（0A-3A,50ms,100mA/us

）Overshoot

TestedatendofPCB3Ato0AVin=85VACVout_min=5.06VVout_max=5.54VVin=264VACVout_min=5.06VVout_max=5.54VUndershoot

Vin=85VACVout_min=4.36VVout_max=5.35VTestedatendofPCB0Ato3AVin=264VACVout_min=4.52VVout_max=5.35VVdsforPrimaryMosfet264Vac3A85Vac3AVp-p=314VVp-p=566VVdsforSecondaryMosfet264Vac3A85Vac3AVp-p=20.6VVp-p=41.6VTemperatureVin=85VacIout=3ACH1:AP3776:67.2℃CH2:APR34309:71.5℃CH3:MOS@primary：66.7℃CH4:Roomtemperature：25℃CH5:Transformer：61.2℃OpenframeTemperatureVin=230VacIout=3ACH1:AP3776:61.8℃CH2:APR34309:70.8℃CH3:MOS@primary：77.9℃CH4:Roomtemperature：25℃CH5:Transformer：61.2℃OpenframeTemperatureVin=264VacIout=3ACH1:AP3776:62.4℃CH2:APR34309:71.3℃CH3:MOS@primary：82.5℃CH4:Roomtemperature：25℃CH5:Transformer：62.9℃OpenframeEMI-----Line230VFullloadEMI-----Neutral230VFullloadRadiationVerticalRadiationHorizontalSummary16DescriptionMinTypMaxUnitsConditionsTestresultInputVoltage8550/60264VAC

Frequency4763HzNoLoadInputPower