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1、TaoGongGrapheneEngineeringGrapheneisaone-atom-thickplanarsheetofsp2-bondedcarbonare densely packed in b crystal lattice. The name comes graphite + -ene; graphite itself consists of many graphene sheets Thecarbon-carbonbondlengthingrapheneTaoGongGrapheneEngineeringGrapheneisaone-atom-thickplanarsheet

2、ofsp2-bondedcarbonare densely packed in b crystal lattice. The name comes graphite + -ene; graphite itself consists of many graphene sheets Thecarbon-carbonbondlengthingrapheneisabout0.142nm.Grapheneisthe basic structural element of some carbon allotropes including graphite, carbonnanotubesandfuller

3、enes.Itsobeconsideredasanlargearomaticmolecule,thelimitingcaseofthefamilyofflatpolycyclic aromatic hydrocarbons called graphenes.CarbonCarbon nanotubes (CNTs; also known asbuckytubes) are allotropes of cylindricalnanostructure.Nanotubeshavebeenconstructedwithto-diameterratioofupto132,000,000:1,1whic

4、hissignificantlynanyothermaterial.Thesecylindricalcarbonmoleculeshavenoveltmakethempotentiallyanyapplicationsinelectronics,opticsandotherfieldsofmaterialsscience,aswell as usesinarchitecturalfields.Theyexhibitextraordinaryndelectricalproperties,andareefficientthermalThe nature of the bonding of a na

5、notube is described by appd quantum chemistry, specifically, orbital hybridization. The chemical bonding of nanotubes is comedentirelyofsp2bonds,similartothoseofgraphite.Thisbondingstructure,whichisnthesp3bondsprovidesthemoleculeswiththeiruniquestrength.Nanotubesnaturallyaligno ropes held together b

6、y Van der Waals forThe vel is an t pertains to electrons in a semiconductor. It the chemical potential t appears in the electrons Fermi-Dirac which is the t there is an electron in a particular single-TaoGongGrapheneEngineeringse .TistheabsolutetemperatureandkisBoltzmannsconstant.Consequently,ast at

7、e at the Fervel has a 50% chance of being occupied by an electron.vel is the term used to describe the top of the collection of electron energy levels absolute zero temperature. This concept comes from Fermi-Dirac s istics. Electrons are fermionsTaoGongGrapheneEngineeringse .Tistheabsolutetemperatur

8、eandkisBoltzmannsconstant.Consequently,ast ate at the Fervel has a 50% chance of being occupied by an electron.vel is the term used to describe the top of the collection of electron energy levels absolute zero temperature. This concept comes from Fermi-Dirac s istics. Electrons are fermions and by t

9、he Pau xclu principle cannot exist in identical energy s es. So at absolute zero they pack o the lowest available energy s es and build up a Fermi sea of electron energyses. The Fermi level is the surface t sea at absolute zero where no electrons will enough energy to rise above the surface. The con

10、cept of the Fermi energy is a crullyimportant concept for the understanding of the electrical and thermal properties of solids. Both electrical and thermal ses involve energies of a small fraction of an electron volt. But Fermi energies of metals are on the order of electron volts. This t the vast m

11、ajority the electrons cannot receive energy from those ses because there are no available ses forthem to goto within a fraction of an electron volt oftheir present energy. Limitedto tinydepthofenergy,eractionsarelimitedtoripplesontheFermiAt higher temperatures a certain fraction, characterizedbytheF

12、ermifunction,willexistabovethevel.Thevelplaysanimportanthe band theory of solids. In doped semiconductors,p-typeandn-type,theFervelshiftedbytheimpurities,illustratedbytheir gaps.Thevel isreferredtoastheetals,theFermienergygivesusinformationabout the velocities of the electrons which participate in o

13、rdinary electrical conduction. The amount of energy which canbe given to an electronin suchconductionsesisontheorderofmicro-electronvoltscopper wire exle), so only those electrons very closetotheFermienergycanparticipate.The Fermivelocity of these conduction electrons can be calculated from the Ferm

14、i energy.Thisspeedisapartofthe TaoGongGrapheneEngineeringOhmsLawforelectricalconduction.Forametal,densityofconductionelectronscanbeimp the Fermi energy.d TheFermienergyalsoplaysanimportantroleinunderstandingthemysteryof why electrons do not contribute significantly to the specific heat of solids at

15、ordinary temperatures, while they are dominant contributors to thermal conductivity and electrical conductivity. Since only a tiny fraction of theelectronsinaTaoGongGrapheneEngineeringOhmsLawforelectricalconduction.Forametal,densityofconductionelectronscanbeimp the Fermi energy.d TheFermienergyalsop

16、laysanimportantroleinunderstandingthemysteryof why electrons do not contribute significantly to the specific heat of solids at ordinary temperatures, while they are dominant contributors to thermal conductivity and electrical conductivity. Since only a tiny fraction of theelectronsinametalarehetherm

17、alenergykToftheFermienergy,arefrozenoutoftheheat capacitybythePauliprinciple. Atverytemperatures,theelectronspecifices組成的微觀體系而言，每個都處在各自的量子能態(tài)上。現在假就一個由把所有的從這些量子態(tài)上移開。之后再把這些按照一定的規(guī)則（例如占據 最低粗略理解能級。 雖原理等）填充在各個可供的可供占據的量子態(tài)。最后一個嚴格來說，子學領域中 但是在半導體物理和電個術語所代表的含義可以從上下語境中判斷1可以是電子、質子、中子（自旋為半整數的粒子對于金屬，電子的最高占據能級就是能級能級

18、的物理意義是，該能級上的一個狀態(tài)被電子占據的幾率是1/2能級在半導體物理中是個很重要的物理參數，只要知道了他的數值，在一定溫度下，電子在各量子態(tài)上的統(tǒng)計分布就完全確定了。它和溫度，半導體材料的導電類型，雜質的含 量以及能量零點的選取有關。將半導體中大量電子的集體看成一個熱力學系統(tǒng)，可以證明處于熱平衡狀態(tài)下的電子系的solarA solar cell is a tconverts theenergy ofsunlighto by the photovoltaic effect. Sometimes the term solar cell for ended specifically to cap

19、ture energy from sunlight such as panels solar cells, while the term photovoltaic cell is used when the light source unspecified. s of cells are used to make solar panels, solar modules, photovoltaicarrays.Photovoltaicsis thefieldoftechnologyandresearchTaoGongGrapheneEngineeringto the application of

20、 solar cells in producing electricity for practical use. energygeneratedthiswayisanex le ofsolarsiliconsolarcellismadefromptypesiliconsemiconductorwhichissiliconwhichhas been dopedby roducing asmallamount of anelementsuch asTaoGongGrapheneEngineeringto the application of solar cells in producing ele

21、ctricity for practical use. energygeneratedthiswayisanex le ofsolarsiliconsolarcellismadefromptypesiliconsemiconductorwhichissiliconwhichhas been dopedby roducing asmallamount of anelementsuch asB,Al, Inor Gafrom GroupIIIofthePeriodicTable.Then athin layerofabout1micrometre thickness onthe topsurfac

22、e isconverted on typesemiconductorby diffusing in a Group V element (As, P, Sb). Where this layer joins the p type material there isapnjunction,which hasanelectricfield acrossit. Electrodes areformed thetopandbottomofthet on theeingmadet can pass through it. These electrodes are used to connect the

23、cellothesolarP-Npnjunctionisformedbyjoiningp-typeandn-typesemiconductors togetherveryclosecontact.Thetermjunctionreferstotheerfacewheretworegionsofthesemiconductormeet.Iftheywereconstructedoftwothisroduceagrain boundary, sopnjunctions arecreatedinsinglecrystalofsemiconductorby,for y ion ofdopants,or

24、taxy(growingalayerofcrystaldopedwithTaoGongGrapheneEngineeringtypeofdopantontopofalayerofcrystaldopednotherTaoGongGrapheneEngineeringtypeofdopantontopofalayerofcrystaldopednothertype ofmetaloxidesemiconductorfield-effecttransistoradeviceusedlifyingorswitchingelectronicOSFETs,avoltageon the insulated

25、gateelectrodecaninduceaconductingchannelnthetwocontactscalledsource anddrain.Thechannelcan beofn-type orp-type articleonsemiconductor),andisaccordingly calledannMOSFETorpMOSFET(alsocommonlynMOS,pMOS).Itisbyfarthemostcommon inbothdigitalogcircuits, thougholarjunctiontransistorwasonetime oreMOSstructu

26、reisobtainedbygrowingalayerofsilicondioxide(SiO2)ontopasiliconsubstrateanditingalayerofmetalorpolycrystallinesiliconlatter is commonly used). As the silicon dioxide is a dielectric material, its structureisequivalenttoaplanarcapacitor,withoneoftheelectrodesreplaced by a semiconductor.TaoGongGraphene

27、EngineeringWhenavoltage isdacrossaMOSstructure,itmodifiesthe distributionhesemiconductor.Ifweconsider aP-typesemiconductor(with thedensityofacceptors,pthedensityofholes;p=NAinTaoGongGrapheneEngineeringWhenavoltage isdacrossaMOSstructure,itmodifiesthe distributionhesemiconductor.Ifweconsider aP-types

28、emiconductor(with thedensityofacceptors,pthedensityofholes;p=NAinneutralbulk),voltage,VGB,fromgatetobody(seefigure)createsadepletionlayerbyitivelychargedholesawayfromthegate-erface,leavingedacarrier-freeregionofimmobile,negatively(semiconductor).If VGBishighenough,aacceptorions (seeconcentrationofne

29、gativechargecarriersformsinanlayerlocatedinthinlayer nexttoerfacenthesemiconductorandtheUnliketheMOSFET,wherethelayerelectronsdlythesource/drainheMOScapacitortheyareproducedslowlybythermalgenerationthroughcarriergenerationhedepletionregion.Conventionally,thegatevoltageatwhichvolumedensityofhelayer i

30、sthe same asthe densityofhe bodyiscalledthe thresholdThisstructurewithP-typebodyisthebasisoftheN-typeMOSFET,which requires the addition of an N-type source and drain regionsInsolidephysics, abandgap,alsocalledanenergygaporbandgap,isenergyrangein asolid wherenoelectrones canexist. Ingraphs ofelectron

31、icbandstructureofsolids,the bandgapgenerally referstothedifference(inelectronvolts)nthetopofthevalencebandandtheoftheconduction bandininsulatorsandfIyyearinSungKyunKwanuniversity.Mymajoriscarbon nanotubeswhichasangTaoGongGrapheneEngineeringal nanometer material has unique mechanical, physical, elect

32、rical and hemical nature and has various preparation methods. Our laboratory engages generation of carbon nanotubes and TaoGongGrapheneEngineeringal nanometer material has unique mechanical, physical, electrical and hemical nature and has various preparation methods. Our laboratory engages generatio

33、n of carbon nanotubes and the combination n carbon ubes and biology, chemistry and electricity. The topic my research is walledcarbonnanotubesdecoratedwithsilvernanoparticlesto decreasesilver etallic ink. we significantly decreased the concentration of r (Ag) nanoparticles to 3 wt. % by a small addi

34、tion of single-walled carbon anotubes (SWNTs) decorated g nanoparticles (0.003 wt. %) while ning the high conductivity. The nanotubes with large aspect ratios effective electrical pathways n Ag nanoparticles, n avenge size f 30 nm, and the erface was improved by the attached Ag ticles, age size of 3

35、 nm, to the sidewall of nanotubes. The y of nanoparticles dispersed by ethyl cellulose in N-methyl pyrrolidone was good for n ks, and conductive patterns could be llpeusinainkjedeviceOur laboratory is equiped dvanced facilities. Under the instruction of the professor, all the bers the laboratory hav

36、e done their at most efforts and In solid e physics, a band gap, also called an energy gap or bandgap, is energy range in a solid where no electron es can exist. In graphs of TaoGongGrapheneEngineeringelectronic band structure of solids, the band gap generally refers to the TaoGongGrapheneEngineerin

37、gelectronic band structure of solids, the band gap generally refers to the difference (in electron volts) n the top of the bottomoftheconductionbandininsulatorsandJams huaxuetongxin ouzhouhuaxue XRD堿性有陽離子（）usually Nanotube: a hollow cylindrical or toroidal made of n,which is a nanometer-scale tube-l

38、ike structure.Nanowire: nanowire is a extremely thin wire wi a few nanometers or less.Top-down approach: an approach to the problem conceptual level and works down to the detail.one diameter the order t begins at the Bottom up approach: an approach to the problem d works up to the highest conceptual

39、 level.t begins with details electron microscopy: a microscopy technique whereby a beam electrons is transmitted through an ultra-thin specimen eracting with spec imen as it passes through. Which can detect the electrons and form a highly magnified image on a screen.Dip pen lithography: It is AFM-ba

40、sed soft lithography technique where the TaoGongGrapheneEngineeringof AFM cantilever acts n, which coated chemical compound r mixture acting the ink and put in contact with the Quantum TaoGongGrapheneEngineeringof AFM cantilever acts n, which coated chemical compound r mixture acting the ink and put

41、 in contact with the Quantum dot: a portion of matter whose excitons are confined in all three atial dimens. which consists of just a few atoms belonging to quasi-zero- al nanomaterials.Flexible electronics: a type of electronic circuit built on a flexible substrate whi ch doesnot need to be flat bo

42、ard or thin film.Self-assembly : is a type of s in which a disordered system of pre-ng components forms anized structure or pattern as a consequence specific, local al direction.eractions among the components themselves without Self-healing a class of the smart ve the incorporated ability to repair

43、damage caused by mechanical usage over Self-healing: describes any device or s the ability to perceive at it is not operating correctly and without ervention make the essary adjustments to restore itself to normal Convergence technology: it is a tendency for different technological systems o evolve t