《氣相合成方法》PPT課件

1、可運用于制備金屬、半導體以及絕緣資料可運用于制備金屬、半導體以及絕緣資料等。等。045023 622322()1296CAl CHOAl OH OCO 流里，借著反響氣體在主氣流及基片外表間的濃流里，借著反響氣體在主氣流及基片外表間的濃度差，以分散的方式，經(jīng)過邊境層傳送到基片的度差，以分散的方式，經(jīng)過邊境層傳送到基片的外表，外表，圖1 化學氣相堆積的五個主要的機構(a)反響物已分散經(jīng)過界面邊境層；(b)反響物吸附在基片的外表；(c)化學堆積反響發(fā)生； (d) 部分生成物已分散經(jīng)過界面邊境層；(e)生成物與反響物進入主氣流里，并分開系統(tǒng)edRv碳納米管 CNTs 的運用前景隨著對CNTs運用研討

2、的深化人們發(fā)現(xiàn)大內徑碳納米管LIDCNTs能夠更有運用前景。.實驗部分取03 g催化劑粉末均勻分布在石英舟底部石英舟放置在管式爐的恒溫區(qū)氮氣的維護下升溫。升溫速率為10 min-1氮氣的流量控制在80 sccm當溫度升高到反響溫度時(400、500、600、700、800)，封鎖氮氣。用注射泵通入無水乙醇,反響60 min。流量0.27mL min-1停頓通無水乙醇。在氮氣的維護下降至室溫。n可見，CNTs著明顯對應關系，催化劑粒徑越大，CNTs的內徑越大。結果與討論碳納米管的制備溫度對碳納米管內徑的影響從500-800 其內徑不斷提高之所以內徑隨著CNTs制備溫度的升高而增大，是由于Ni-F

3、e4A分子篩催化劑的粒徑隨著CNTs制備溫度的升高而聚集長大大內徑碳納米管的生長機理研討背景It should be noted that with RF activationwe could lower the substratetemperature more than200 , down to 420 , within the epitaxial growth cycle(Fig. 1, curve 2), while the EL growth rate was loweredfour times and thus allowing us to significantly improv

4、ethe initial stage of the EL nucleation and growth.結果與討論LEICA DMLP microscope at 600 magnificationOne can see that the film deposited with RF activation features less developed surface morphology, and the growth patternof the film is more than one order and less than that prepared without activation

5、. Also the size and number of Zn clusters which usually complete growth figures is sufficiently lower. As a result, we have a smoother and mirror-like surface of the film.同時，還測定了此ZnO薄膜的其他性質結論：利用等離子體CVD技術制備了ZnO薄膜,厚1-2微米，有高的結晶度，完美的外表形狀，好的電學和光學性質。The obtained ZnO/asapphire films was 12 mm thick and featured high crysta