IRF540中文數據手冊要點說明

1、IRF540 N溝道MOS管特性Thrench工藝低的導通阻快速開關低熱敏電阻綜述使用溝渠工藝封裝的N通道增強型場效應功率晶體管應用：DC到DC轉換器開關電源電視及電腦顯示器電源IRF540中提供的是SOT78(TO220AB)常規(guī)鉛的包裹。IRF540S中提供的是SOT404(D PAK)表面安裝的包裹。管腳管腳描述1Gate2Drain3SourceTabDrain極限值系統絕對最大值依照限制值符號參數條件最小值最大值單位V_DSSV_DGRV_GSI_DI_DMP_DTj，Tsig漏源極電壓漏門極電壓門源極電壓連續(xù)漏電流脈沖漏電流總功耗操作點和存儲溫度Tj= 25 C to 175CTj

2、 = 25 C to 175C; RGS = 20 kTmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C-55100100±20231692100175VVVAAAW雪崩能量極限值符號參數條件最小值最大值單位非重復性雪崩能量最大非重復性雪崩電流Unclamped inductive load, IAS = 10 A; tp = 350 µs; Tj prior to avalanche = 25C;VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:

3、14-23023mJA熱敏電阻符號參數條件最小值典型值最大值單位安裝底座交界處的熱阻周圍環(huán)境熱阻SOT78封裝，自由空間SOT404封裝，PCB上-60501.5-K/WK/WK/W電特性25 除非另有說明符號參數條件最小值典型值最大值單位漏源極崩潰電壓門閥電壓漏源極導通電阻向前跨導門源極泄漏電流0門極電壓漏電流=0V；=0.25mATj = -55C = ; ID = 1 mATj = 175CTj = -55C = 10 V; ID = 17 ATj = 175C=25V; =17A=±20 V;=0VVDS = 100 V; VGS = 0 VVDS=80V;VGS=0V;Tj

4、= 175C1008921-8.7-3-4913215.5100.05-4-677193-10010250VVVVVmmSnAuAuA總共門極電荷門源極電荷門漏極電荷ID = 17 AVDD = 80 V; VGS = 10 V-651029nCnCnC開啟延遲時間開啟上沿時間關閉延遲時間關閉下沿時間 = 50 V; = 2.2 ; = 10 V; = 5.6 Resistive load-8392624-nsnsnsns部漏電感部漏電感部源極電感Measured tab to centre of die Measured from drain lead to centre of die (S

5、OT78 package only)Measured from source lead to source bond pad-3.54.57.5-nHnHnH輸入電容輸出電容反饋電容 = 0 V; = 25 V; f = 1 MHz-890139831187167109pFpFpF反向二極管極限值及特性符號參數條件最小值典型值最大值單位連續(xù)源極電流脈沖源極電流二極管正向電壓=28A；=0V-0.9423921.5AAV反向恢復之間反向恢復命令=17A；=0V;-d/dt=100A/us;=25V-61200-nsnC底座溫度-自然功率降低百分比圖1：自然功率損耗底座溫度-漏電流降低百分比圖2 ：自然持續(xù)漏電流漏源極電壓-脈沖漏極電流峰值圖3 ：安全操作區(qū)域脈寬-瞬態(tài)熱阻抗圖4：瞬態(tài)熱阻抗漏源極電壓-漏極電流圖5：典型輸出特性漏極電流-漏源極導通阻抗圖6：典型導通阻抗圖7：典型傳遞特性