深圳深威志電子-光電-52 3m紅外發(fā)射管tsts7500_h

1、 TSTS7500Vishay SemiconductorsVISHAYGaAs IR Emitting Diodes in Hermetically Sealed TO-18 CaseDescriptionTO-18 package. Their flat glass windows make them ideal for use with external optics.FeaturesSuitable for pulse operationWide angle of half intensity j = 30 Peak wavelength lp = 950 nmHigh reliabi

2、lity94 8400Good spectral matching to Si photodetectorsLead-free deviceApplicationsRadiation source in near infrared rangeAbsolute Maximum RatingsTamb = 25 C, unless otherwise specifiedElectrical CharacteristicsTamb = 25 C, unless otherwise specifiedDocument Number 81049Rev. 1.5, 23-Jun-04www.vishay.

3、com1ParameterTest conditionSymbolMinTyp.MaxUnitForward VoltageIF = 100 mA, tp 20 msVF1.31.7VBreakdown VoltageIR = 100 mAV(BR)5VJunction capacitanceVR = 0 V, f = 1 MHz, E = 0Cj30pFParameterTest conditionSymbolValueUnitReverse VoltageVR5VForward currentPeak Forward CurrentSurge Forward CurrentTcase 25

4、 Ctp/T = 0.5, tp 100 ms,Tcase 25 C tp 100 msIF IFMIFSM2505002.5mA mAAPower DissipationTcase 25 CPV PV170500mW mWJunction TemperatureStorage Temperature RangeThermal Resistance Junction/ AmbientTj Tstg RthJA100- 55 to + 100450CCK/WThermal Resistance Junction/ CaseRthJC150K/WTSTS7500Vishay Semiconduct

5、orsVISHAYOptical CharacteristicsTamb = 25 C, unless otherwise specifiedType Dedicated CharacteristicsTamb = 25 C, unless otherwise specifiedTypical Characteristics (Tamb = 25 C unless otherwise specified)30060025050020040015030010020050100000255075100125020406080100Tamb Ambient Temperature ( C )94 8

6、017TambAmbient Temperature ( C)94 8018Figure 1. Power Dissipation vs. Ambient TemperatureFigure 2. Forward Current vs. Ambient T2Document Number 81049Rev. 1.5, 23-Jun-04PV- Power Dissipation ( mW )IF Forward Current ( mA )RthJCRthJARthJCRthJAParameterTest conditionPartSymbolM

7、inTyp.MaxUnitRadiant IntensityIF = 100 mA, tp = 20 msTSTS7500Ie1.251.68mW/srParameterTest conditionSymbolMinTyp.MaxUnitRadiant PowerTemp. Coefficient of feIF = 100 mA, tp 20 ms IF = 100 mAfeTKfe7- 0.8mW%/KAngle of Half Intensityj 30degPeak Wavelength Spectral Bandwidth Rise TimeFall TimeVirtual Sour

8、ce DiameterIF = 100 mA IF = 100 mAIF = 1.5 A, tp/T = 0.01, tp 10 msIF = 1.5 A, tp/T = 0.01, tp 10 mslpDl tr tf950504004000.5nm nm ns nsmm TSTS7500Vishay SemiconductorsVISHAY101100IFSM = 2.5 A ( Single Pulse )10tp/T= 0.011000.00.110-110-110010110210010110210310410-2t p Pulse Duration ( ms

9、)IF Forward Current ( mA )94 800394 7926Figure 3. Pulse Forward Current vs. Pulse DurationFigure 6. Radiant Intensity vs. Forward Current10 4100010 310010 21010 1110 00.110-101234100101102103104VF Forward Voltage(V)IF Forward Current ( mA )94 799694 7977Figure 4. Forward Current vs. Forward VoltageF

10、igure 7. Radiant Power vs. Forward Current1.2IF = 10 mA1.00.80.70020406080100140-10 0 1050100Tamb - Ambient Temperature ( C)Tamb - Ambient Temperature ( C)94 799094 7993Figure 5. Relative Forward Voltage vs. Ambient TemperatureFigure 8. Rel. Radiant Intensity/Power vs. Ambient Temp

11、eratureDocument Number 81049Rev. 1.5, 23-J3F - Forward Current ( mA )VFrel- Relative Forward VoltageF - Forward Current ( A )I e rel ;e rele Radiant Power ( mW )I e Radiant Intensity ( mW/sr )IF = 20 mATSTS7500Vishay SemiconductorsVISHAY1.251.00.750.50.2501000900950 - Wavelength (

12、 nm )94 7994Figure 9. Relative Radiant Power vs. Wavelength0102030401.00.9500.8607080 0.4 94 7978Figure 10. Relative Radiant Intensity vs. Angular D4Document Number 81049Rev. 1.5, 23-Jun-04- Relative Radiant PowerI e rel Relative Radiant Intensitye relIF =

13、 100 mA TSTS7500Vishay SemiconductorsVISHAYPackage Dimensions in mm14485Document Number 81049Rev. 1.5, 23-J5TSTS7500Vishay SemiconductorsVISHAYOzone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1. Meet all present and future national and int

14、ernational statutory requirements.2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular con

15、cern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various nationa

16、l and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1. Annex A, B and list of transitional substances of the Montreal Pr

17、otocol and the London Amendments respectively2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USACouncil Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.3.Vishay Semicon

18、ductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contauch substances.We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for anyunintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors agat allclaims, costs, damages, and expenses, arising out of, direct